JPS62275394A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS62275394A
JPS62275394A JP11724686A JP11724686A JPS62275394A JP S62275394 A JPS62275394 A JP S62275394A JP 11724686 A JP11724686 A JP 11724686A JP 11724686 A JP11724686 A JP 11724686A JP S62275394 A JPS62275394 A JP S62275394A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
circuit
connected
input
sense
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11724686A
Inventor
Tadashi Muto
Takashi Nara
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To improve a working margin and to increase the reading speed with a semiconductor storage device by providing a differential sense amplifier circuit which amplifies the read signal of a memory cell to a complementary common data line to which the memory cell is selectively connected.
CONSTITUTION: The input terminal of a differential sense amplifier circuit SA0 and the output terminal of a data input buffer DIB are connected to the complementary common data lines CD0 and the inverse of CD0 respectively. Furthermore, these input and output terminals are connected to the drains of load MOSFETs Q15 and Q16 via limiter MOSFET Q151 and Q161 respectively. The fixed positive bias voltage Vb is applied to the gates of both MOSFETs Q151 and Q161. Then both FETs Q15 and Q17 function as resistance elements having the prescribed conductances when their gates are connected to the earth potential of the circuit SA0. Therefore, the drain voltages of the FETs Q15 and Q16, i.e., the input voltage of the sense amplifier circuit SA vary in response to the read current.
COPYRIGHT: (C)1987,JPO&Japio
JP11724686A 1986-05-23 1986-05-23 Semiconductor storage device Pending JPS62275394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11724686A JPS62275394A (en) 1986-05-23 1986-05-23 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11724686A JPS62275394A (en) 1986-05-23 1986-05-23 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS62275394A true true JPS62275394A (en) 1987-11-30

Family

ID=14707006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11724686A Pending JPS62275394A (en) 1986-05-23 1986-05-23 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS62275394A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02208889A (en) * 1989-02-09 1990-08-20 Mitsubishi Electric Corp Rom card
JP2007503678A (en) * 2003-05-13 2007-02-22 イノヴァティーヴ シリコン, インコーポレーテッドInnovative Silicon, Inc. The method of operating a semiconductor memory device and the element
JP2007516547A (en) * 2003-05-13 2007-06-21 イノヴァティーヴ シリコン ソシエテ アノニムInnovative Silicon Sa Semiconductor memory cell, a method of operating an array, structures and elements, and these
JP2008059637A (en) * 2006-08-29 2008-03-13 Nec Electronics Corp Nonvolatile semiconductor memory
JP2008077725A (en) * 2006-09-20 2008-04-03 Sharp Corp Semiconductor memory device and electronic apparatus
JP2008077727A (en) * 2006-09-20 2008-04-03 Sharp Corp Semiconductor storage device and electronic device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02208889A (en) * 1989-02-09 1990-08-20 Mitsubishi Electric Corp Rom card
JP2007503678A (en) * 2003-05-13 2007-02-22 イノヴァティーヴ シリコン, インコーポレーテッドInnovative Silicon, Inc. The method of operating a semiconductor memory device and the element
JP2007516547A (en) * 2003-05-13 2007-06-21 イノヴァティーヴ シリコン ソシエテ アノニムInnovative Silicon Sa Semiconductor memory cell, a method of operating an array, structures and elements, and these
JP2008059637A (en) * 2006-08-29 2008-03-13 Nec Electronics Corp Nonvolatile semiconductor memory
JP2008077725A (en) * 2006-09-20 2008-04-03 Sharp Corp Semiconductor memory device and electronic apparatus
JP2008077727A (en) * 2006-09-20 2008-04-03 Sharp Corp Semiconductor storage device and electronic device

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