JPS622715B2 - - Google Patents
Info
- Publication number
- JPS622715B2 JPS622715B2 JP4477481A JP4477481A JPS622715B2 JP S622715 B2 JPS622715 B2 JP S622715B2 JP 4477481 A JP4477481 A JP 4477481A JP 4477481 A JP4477481 A JP 4477481A JP S622715 B2 JPS622715 B2 JP S622715B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- active layer
- cladding layer
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005253 cladding Methods 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000011669 selenium Substances 0.000 description 16
- 230000000670 limiting effect Effects 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000012010 growth Effects 0.000 description 5
- 238000005204 segregation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4477481A JPS57159082A (en) | 1981-03-25 | 1981-03-25 | Semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4477481A JPS57159082A (en) | 1981-03-25 | 1981-03-25 | Semiconductor laser element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57159082A JPS57159082A (en) | 1982-10-01 |
| JPS622715B2 true JPS622715B2 (enrdf_load_stackoverflow) | 1987-01-21 |
Family
ID=12700755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4477481A Granted JPS57159082A (en) | 1981-03-25 | 1981-03-25 | Semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57159082A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59208887A (ja) * | 1983-05-13 | 1984-11-27 | Nec Corp | 半導体発光素子 |
| JPS6175584A (ja) * | 1984-09-20 | 1986-04-17 | Nec Corp | 半導体レ−ザ |
| JPS61163689A (ja) * | 1985-01-14 | 1986-07-24 | Sharp Corp | 半導体装置の製造方法 |
-
1981
- 1981-03-25 JP JP4477481A patent/JPS57159082A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57159082A (en) | 1982-10-01 |
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