JPS6226595B2 - - Google Patents

Info

Publication number
JPS6226595B2
JPS6226595B2 JP16861780A JP16861780A JPS6226595B2 JP S6226595 B2 JPS6226595 B2 JP S6226595B2 JP 16861780 A JP16861780 A JP 16861780A JP 16861780 A JP16861780 A JP 16861780A JP S6226595 B2 JPS6226595 B2 JP S6226595B2
Authority
JP
Japan
Prior art keywords
gate
insulating film
erase
data
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16861780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5792866A (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP16861780A priority Critical patent/JPS5792866A/ja
Priority to DE8181305349T priority patent/DE3175125D1/de
Priority to EP81305349A priority patent/EP0052982B1/en
Priority to US06/321,322 priority patent/US4803529A/en
Publication of JPS5792866A publication Critical patent/JPS5792866A/ja
Publication of JPS6226595B2 publication Critical patent/JPS6226595B2/ja
Priority to US07/193,079 priority patent/US4910565A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP16861780A 1980-11-20 1980-11-29 Semiconductor memory device Granted JPS5792866A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP16861780A JPS5792866A (en) 1980-11-29 1980-11-29 Semiconductor memory device
DE8181305349T DE3175125D1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
EP81305349A EP0052982B1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
US06/321,322 US4803529A (en) 1980-11-20 1981-11-13 Electrically erasable and electrically programmable read only memory
US07/193,079 US4910565A (en) 1980-11-20 1988-05-12 Electrically erasable and electrically programmable read-only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16861780A JPS5792866A (en) 1980-11-29 1980-11-29 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5792866A JPS5792866A (en) 1982-06-09
JPS6226595B2 true JPS6226595B2 (cg-RX-API-DMAC7.html) 1987-06-09

Family

ID=15871373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16861780A Granted JPS5792866A (en) 1980-11-20 1980-11-29 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5792866A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS644894U (cg-RX-API-DMAC7.html) * 1987-06-30 1989-01-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS644894U (cg-RX-API-DMAC7.html) * 1987-06-30 1989-01-12

Also Published As

Publication number Publication date
JPS5792866A (en) 1982-06-09

Similar Documents

Publication Publication Date Title
US4612212A (en) Method for manufacturing E2 PROM
US4803529A (en) Electrically erasable and electrically programmable read only memory
US4466081A (en) Semiconductor memory device
JPS6034199B2 (ja) 半導体記憶装置
US4437172A (en) Semiconductor memory device
JPH10510124A (ja) ２トランジスタ無消費電力型の電気的書き換え可能な不揮発性ラッチ素子
JPH03295097A (ja) 不揮発性半導体記憶装置
US4437174A (en) Semiconductor memory device
US4630087A (en) Nonvolatile semiconductor memory device
JPH02223097A (ja) 不揮発性半導体メモリ装置
JPS6226596B2 (cg-RX-API-DMAC7.html)
JPS6226597B2 (cg-RX-API-DMAC7.html)
JPS623994B2 (cg-RX-API-DMAC7.html)
JPS6226595B2 (cg-RX-API-DMAC7.html)
JPS6331114B2 (cg-RX-API-DMAC7.html)
JPS6225273B2 (cg-RX-API-DMAC7.html)
JPS6139752B2 (cg-RX-API-DMAC7.html)
JPH0150116B2 (cg-RX-API-DMAC7.html)
JPS6331113B2 (cg-RX-API-DMAC7.html)
JPS6225274B2 (cg-RX-API-DMAC7.html)
JPS6139753B2 (cg-RX-API-DMAC7.html)
JPS6152555B2 (cg-RX-API-DMAC7.html)
JPS623991B2 (cg-RX-API-DMAC7.html)
JP3162472B2 (ja) 不揮発性半導体記憶装置
JPS623993B2 (cg-RX-API-DMAC7.html)