JPS62265555A - Local structure analyzing device - Google Patents
Local structure analyzing deviceInfo
- Publication number
- JPS62265555A JPS62265555A JP61107617A JP10761786A JPS62265555A JP S62265555 A JPS62265555 A JP S62265555A JP 61107617 A JP61107617 A JP 61107617A JP 10761786 A JP10761786 A JP 10761786A JP S62265555 A JPS62265555 A JP S62265555A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- ray
- wavelength
- exafs
- varied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000192 extended X-ray absorption fine structure spectroscopy Methods 0.000 claims abstract description 9
- 238000010521 absorption reaction Methods 0.000 claims description 11
- 238000004458 analytical method Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 238000001228 spectrum Methods 0.000 abstract description 5
- 230000010355 oscillation Effects 0.000 abstract description 2
- 230000009466 transformation Effects 0.000 abstract 1
- 125000004429 atom Chemical group 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000012916 structural analysis Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005469 synchrotron radiation Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001845 vibrational spectrum Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
- G01N23/083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
- G01N23/085—X-ray absorption fine structure [XAFS], e.g. extended XAFS [EXAFS]
Landscapes
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
この発明は、蛍光Ｘ線若しくは、オージェ電子髪検出す
ることにより微細領域における所定の構成元素のまわり
の局所構造を解析することのできるＥ Ｘ Ａ Ｆ Ｓ
（Ｅｘｔｅｎｄｅｄ Ｘｒｔ＋ｙ Ａｂｓｏｒｐｔｉ
ｏｎ ＦｉｎｅＳｔｒｕｃｔｕｒａ）法による局所構造
解析装置に関する。[Detailed description of the invention] [Objective of the invention] (Industrial application field) This invention analyzes the local structure around a predetermined constituent element in a micro region by detecting fluorescent X-rays or Auger electron hair. E X A F S that can be done
(Extended Xrt+y Absorpti
The present invention relates to a local structure analysis device using the FineStructura method.
（従来の技術）
分子から固体に到るまで、注「１する原子のまわりに存
在する原子の種類、数、配位、距離等の局所構造を解析
する手段として近年Ｅ Ｘ Ａ Ｆ Ｓ ’ｔｈが注目
されている。半導体産業で重要な材料のうち長範囲の周
期性を持つ、結晶、例えばシリコン。(Prior art) In recent years, E Among the important materials in the semiconductor industry, crystals with long-range periodicity, such as silicon, are attracting attention.
ＧａＡｓに対しては、回折（Ｘ線、電子線、中性子等）
という有力な構造解析手段がある。しかしながら、固溶
体、非晶質といった周期性を持たない均質の構造を解析
することは従来、殆んど不可能であった。ＥＸＡＦＳ法
の開発により、任意の物質に対して、任意の構成原子ま
わりの局所構造を非破壊で解析することが可能になった
。For GaAs, diffraction (X-ray, electron beam, neutron, etc.)
There is a powerful structural analysis method. However, it has been almost impossible to analyze homogeneous structures without periodicity, such as solid solutions and amorphous structures. The development of the EXAFS method has made it possible to non-destructively analyze the local structure around any constituent atoms of any substance.
この方法は、試料に単色化されたｘＬ；Ａを入射し。In this method, monochromated xL;A is incident on the sample.
その波長を連続的に変えることにより、注目する原子の
吸収端、例えばに吸収端から高エネルギー側に現われる
Ｘ線吸収の微細構造スペクトルをｔ１ｇ定し、その振動
スペクトルのフーリエ変換から？を目する原子のまわり
の最近接、第２近接原子の種類、数、配位距離等を求め
る構造解析法である。By continuously changing the wavelength, the absorption edge of the atom of interest, for example, the fine structure spectrum of X-ray absorption that appears on the high energy side from the absorption edge, is determined by t1g, and from the Fourier transform of the vibrational spectrum? This is a structural analysis method that determines the type, number, coordination distance, etc. of the nearest and second neighboring atoms around the target atom.
従って半導体の場合には、従来不可能であった非ｌＩ＆
質シリコン中のシリコンのまわりのシリコンの数、配位
、シリコン間の距離、或いは水素の添加によるこれ等の
変化、或いはパシベーションに広く用いられている。
Ｓｊ、２１ Ｓｉ３Ｎ４中のＳｉのまわりの構造解析が
可能になった。この結果デバイズ或いはプロセス評価法
としてＥＸＡＦＳの活用が考えられる。Therefore, in the case of semiconductors, non-I&
It is widely used for changing the number of silicon around silicon in silicon, coordination, distance between silicon, or these changes by adding hydrogen, or for passivation.
Sj, 21 Structural analysis around Si in Si3N4 has become possible. As a result, EXAFS can be considered as a device or process evaluation method.
又、オプトエレクトロニクス、超高速デバイス用材料と
して重要な■−■族化合物液晶薄膜においては、その組
成の均一性が要求される。ウェハ面内で結晶組成がゆら
ぐことによりそれを用いて作成する半導体レーザの発振
波長が定まらない等の問題があり、ＥＸＡＦＳに期待す
るところは大きい。In addition, compositional uniformity is required for liquid crystal thin films of group 1-2 compounds, which are important as materials for optoelectronics and ultrahigh-speed devices. There are problems such as the fluctuation of the crystal composition within the wafer plane, such as the inability to determine the oscillation wavelength of the semiconductor laser produced using it, so there are great expectations for EXAFS.
しかしながら、従来のＥＸＡＦＳ法は、局所構造は求め
られるが、照射Ｘ線ビーム自体の径が数ｍｍ中あるので
、この照射域に存在する。注目する原子のまわりの局所
構造が平均として得られる。However, in the conventional EXAFS method, although the local structure is determined, the diameter of the irradiated X-ray beam itself is within several mm, so the structure exists in this irradiation area. The local structure around the atom of interest is obtained as an average.
従って真に局所構造が求められる訳ではない。Therefore, a true local structure is not required.
（発明が解決しようとする問題点）
そこで可能な限り照射ビームサイズを小さくすることが
望まれる。現在する最も強力なアンジュレータからのシ
ンクロトロン放射光をスリン１へ等で絞って用いても、
Ｓ／Ｎが悪くなる。或いはＳ／Ｎを向上させると測定時
間が長くなる等の問題が生じる。又、集光装置を用いな
いので測定域はＸ線の吸収係数ビームサイズによって決
まる。本発明の目的は上述の点に鑑み、集光装置を用い
て微小領域に強力なＸ線を照射することにより、微細領
域の局所構造解析が可能なＥＸＡＦＳ装置を提供するこ
とにある。(Problems to be Solved by the Invention) Therefore, it is desirable to reduce the irradiation beam size as much as possible. Even if we narrow down the synchrotron radiation from the most powerful undulator to Surin 1 and use it,
S/N deteriorates. Alternatively, if the S/N ratio is improved, problems such as a longer measurement time may arise. Furthermore, since no condensing device is used, the measurement range is determined by the X-ray absorption coefficient beam size. In view of the above-mentioned points, an object of the present invention is to provide an EXAFS apparatus capable of analyzing the local structure of a minute area by irradiating the minute area with powerful X-rays using a condenser.
（問題点を解決するための手段）
現存する全ての物質のＸ線に対する屈折率は１より１０
−５程度小さい、このために、可視光のそれに対応する
有効な集光レンズを作成することはできない、これに代
る集光光学素子として本提案ではフレネル輪帯板を用い
る。フレネル輪帯板は使用光に対する吸収領域と透過領
域が交互に同心円に配置された円板である。これにより
位相の合った波のみをたし合わせることができるので透
過域の数をΩとすれば光の強度は２２倍になる。ｎ番目
の円の半径Ｒｎが
＋１ｎ ＝ （ｎｆλＮ／２ Ｑ）を満た
す様に描かれていると、波長λに対してｆが焦点距離と
なる。従ってフレネル輪帯板のｆに波長λに反比列する
。試料とフレネル輪帯板の間隔を（１）式に従って変化
させることにより異ったエネルギ（波長）の光を試料の
一定の位置に集光することができる。(Means for solving the problem) The refractive index of all existing substances for X-rays is between 1 and 10.
-5, which makes it impossible to create an effective condensing lens corresponding to that of visible light.In this proposal, a Fresnel zone plate is used as an alternative condensing optical element. A Fresnel zone plate is a disk in which absorption areas and transmission areas for the light used are alternately arranged in concentric circles. This allows only waves that are in phase to be added together, so if the number of transmission regions is Ω, the intensity of light will be 22 times greater. When the radius Rn of the n-th circle is drawn so as to satisfy +1n = (nfλN/2 Q), f becomes the focal length for the wavelength λ. Therefore, f of the Fresnel zone plate is inversely proportional to the wavelength λ. By changing the distance between the sample and the Fresnel zone plate according to equation (1), it is possible to focus light of different energies (wavelengths) on a fixed position on the sample.
（作 用）
前述のフレネル輪帯板は０式から明らかな様に、波長（
エネルギ）により焦点距離が変化する。従って試料の表
面上の任意の位置、そしてその位置において任意の深さ
に常に焦点を結ぶためには試料位置をフレネル輪帯板に
対して相対的に移動する必要がある。こうすることによ
り、波長を変化させつ＼照射位置を一定に保つことがで
きる。こうして試料の所定の微小部分に、波長を所定の
、は原子の吸収端近傍で変化させて蛍光ＸＲＩＡＭ或い
はオージェ電子量を測定することによりＥＸＡＦＳスペ
ク１−ルを求め、その振動部のフーリエ変換により微小
領域の局所構造解析が求められる。(Function) As is clear from formula 0, the Fresnel zone plate mentioned above has a wavelength (
The focal length changes depending on the energy (energy). Therefore, in order to always focus on an arbitrary position on the surface of the sample and at an arbitrary depth at that position, it is necessary to move the sample position relative to the Fresnel zone plate. By doing this, the irradiation position can be kept constant while changing the wavelength. In this way, the EXAFS spectrum is obtained by measuring the amount of fluorescent XRIAM or Auger electrons in a predetermined minute part of the sample while changing the wavelength at a predetermined value near the atomic absorption edge, and by Fourier transform of the vibrating part. Local structural analysis of minute regions is required.
（実 施 例）
第１図に本装置の概略を示す。符号１で示す白色Ｘ線ビ
ーム、例えばアンジュレータからのシンクロトロン放線
Ｘ線はモノクロメータ或いは回折格子２により単色化さ
れる。この回折格子２を紙面に垂直な軸のまわりに回転
することにより、試料に入射するビーム３の波長λは連
続的に変えられる。(Example) Figure 1 shows an outline of this device. A white X-ray beam denoted by 1, for example synchrotron radiation X-rays from an undulator, is made monochromatic by a monochromator or a diffraction grating 2. By rotating this diffraction grating 2 around an axis perpendicular to the plane of the paper, the wavelength λ of the beam 3 incident on the sample can be continuously changed.
今、シリコンのに吸収端、〜１ 、８４ｅＶに注目する
と、波長は〜６．７４人となる。この時吸収は最大とな
り高エネルギ側で振動をしながら減衰する。一般にＥＸ
ＡＦＳスペクトルは吸収端から高エネルギ側に２００〜
３００ｅＶ測定する。−２００ｅＶ離れた点では波長は
〜６．０８人となる。これに対応するフレネル輪帯板４
−試料５の距ＨＡ （ｘ ）の変化は１．８４ｃＶに対
してｆ＝ｌｏ口とすると＋１．０８６■となるｘｔｉ−
変化させることにより試料中の一点を保つことができる
。Now, if we focus on the absorption edge of silicon, ~1,84 eV, the wavelength will be ~6.74 eV. At this time, absorption reaches its maximum and is attenuated while vibrating on the high energy side. Generally EX
The AFS spectrum is 200~ from the absorption edge to the high energy side.
Measure 300eV. At a point -200 eV away, the wavelength is ~6.08 people. Corresponding Fresnel ring plate 4
-The change in the distance HA (x) of sample 5 is +1.086■ for 1.84cV xti-
By changing it, one point in the sample can be maintained.
試料入射面に対向して固体検出器６を置き多チャンネル
分析器７で注目する原子からの蛍光Ｘ線を計測し、記録
計８に記録する。A solid-state detector 6 is placed opposite the sample entrance surface, and a multi-channel analyzer 7 measures fluorescent X-rays from atoms of interest, which are recorded on a recorder 8.
しかる後に、スペクトルの振動項をフーリエ変換し注目
する原子のまわりの原子の種類、数、距離等が求められ
る。Thereafter, the vibration term of the spectrum is Fourier transformed to determine the type, number, distance, etc. of atoms surrounding the atom of interest.
蛍光Ｘ線ではなくオージェ電子を検出する場合には、固
体検出器の代りに電子エネルギ分析器を用いれば良い。When detecting Auger electrons instead of fluorescent X-rays, an electron energy analyzer may be used instead of a solid state detector.
本発明によって以下の効果が得られる。 The present invention provides the following effects.
１）入射Ｘ線としてフレネル輪帯板がらの位相の合った
光を集光して用いることにより、少くとも一以下の領域
で従来の平行光、例えばシンクロトロン放射光の数１０
〜数１００倍の強度のＸ線が得られる。1) By condensing and using phase-matched light from a Fresnel zone plate as incident X-rays, conventional parallel light, such as synchrotron radiation, can be used in at least one area or less
X-rays with intensity up to several hundred times higher can be obtained.
２）強力なＸＸ１Ａが集光されることにより任意の微小
領域のＥＸＡＴＳが測定可能となり局所構造解析が可能
となる。2) By condensing the powerful XX1A, EXATS in any minute region can be measured and local structure analysis becomes possible.
第１図は本発明の構成を示す概略図である。
１・・・白色Ｘ線ビーム
２・・・モノクロメータ若しくは回折格子３・・・単色
Ｘ線ビーム
４・・・フレネル輪帯板
５・・・被検試料
６・・・固体検出器
７・・・多チャンネル分析器
８・・・記録計。
代理人 弁理士 則 近 憲 佑
同 竹 花 喜久男FIG. 1 is a schematic diagram showing the configuration of the present invention. 1... White X-ray beam 2... Monochromator or diffraction grating 3... Monochromatic X-ray beam 4... Fresnel zone plate 5... Test sample 6... Solid state detector 7...・Multi-channel analyzer 8...Recorder. Agent Patent Attorney Nori Chika Yudo Kikuo Takehana
Claims (1)
検試料の表面上、及び深さ方向の所定の位置に集光する
フレネル輪帯板と、試料移動台とから成り被検試料中の
注目する原子の吸収端近傍において該原子の共鳴吸収を
励起するＸ線入射系と、励起された蛍光Ｘ線、もしくは
、オージュ電子を検出する検出系とから成るＥＸＡＦＳ
による局所構造解析装置。It consists of a spectroscope that spectrally separates the incident white X-ray light, a Fresnel zone plate that focuses the spectrally spectrally separated light on the surface of the test sample and at a predetermined position in the depth direction, and a sample moving table. EXAFS consists of an X-ray incidence system that excites resonance absorption of atoms of interest in the sample near their absorption edges, and a detection system that detects excited fluorescent X-rays or Auger electrons.
local structure analysis device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61107617A JPS62265555A (en) | 1986-05-13 | 1986-05-13 | Local structure analyzing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61107617A JPS62265555A (en) | 1986-05-13 | 1986-05-13 | Local structure analyzing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62265555A true JPS62265555A (en) | 1987-11-18 |
Family
ID=14463715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61107617A Pending JPS62265555A (en) | 1986-05-13 | 1986-05-13 | Local structure analyzing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62265555A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055679A (en) * | 1989-01-06 | 1991-10-08 | Hitachi, Ltd. | Surface analysis method and apparatus |
-
1986
- 1986-05-13 JP JP61107617A patent/JPS62265555A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055679A (en) * | 1989-01-06 | 1991-10-08 | Hitachi, Ltd. | Surface analysis method and apparatus |
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