JPS6226054U - - Google Patents

Info

Publication number
JPS6226054U
JPS6226054U JP1985117749U JP11774985U JPS6226054U JP S6226054 U JPS6226054 U JP S6226054U JP 1985117749 U JP1985117749 U JP 1985117749U JP 11774985 U JP11774985 U JP 11774985U JP S6226054 U JPS6226054 U JP S6226054U
Authority
JP
Japan
Prior art keywords
semiconductor layer
compound semiconductor
layers
concentration compound
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1985117749U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985117749U priority Critical patent/JPS6226054U/ja
Publication of JPS6226054U publication Critical patent/JPS6226054U/ja
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Description

【図面の簡単な説明】
第1図a,bは各々本考案の一実施例の断面構
造模式図及び上面図、第2図は従来例の断面構造
模式図、第3図は従来の他の例の上面図である。 図中、1……半絶縁性InP基板、2……n
―InGaAs、3……n―InGaAs、4
,5……電極である。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半絶縁性半導体基板上に、それぞれ同じ導電型
    を有する、N(N≧3)個の層から成る高濃度化
    合物半導体層と、N―1個の層から成る前記高濃
    度化合物半導体層に挾まれた低濃度化合物半導体
    層とを積層して形成し、前記高濃度化合物半導体
    層の奇数番目の層の各々に一方の電極を設け、偶
    数番目の層の各々に他方の電極を設けたことを特
    徴とする光導電性半導体受光素子。
JP1985117749U 1985-07-31 1985-07-31 Pending JPS6226054U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985117749U JPS6226054U (ja) 1985-07-31 1985-07-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985117749U JPS6226054U (ja) 1985-07-31 1985-07-31

Publications (1)

Publication Number Publication Date
JPS6226054U true JPS6226054U (ja) 1987-02-17

Family

ID=31003552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985117749U Pending JPS6226054U (ja) 1985-07-31 1985-07-31

Country Status (1)

Country Link
JP (1) JPS6226054U (ja)

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