JPS62260053A - 化合物薄膜蒸着装置 - Google Patents
化合物薄膜蒸着装置Info
- Publication number
- JPS62260053A JPS62260053A JP10215286A JP10215286A JPS62260053A JP S62260053 A JPS62260053 A JP S62260053A JP 10215286 A JP10215286 A JP 10215286A JP 10215286 A JP10215286 A JP 10215286A JP S62260053 A JPS62260053 A JP S62260053A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- thin film
- vapor
- substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 12
- 239000010409 thin film Substances 0.000 title abstract description 11
- 238000000151 deposition Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000126 substance Substances 0.000 claims abstract description 15
- 238000007740 vapor deposition Methods 0.000 claims abstract description 5
- 238000000427 thin-film deposition Methods 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 8
- 239000010408 film Substances 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10215286A JPS62260053A (ja) | 1986-05-06 | 1986-05-06 | 化合物薄膜蒸着装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10215286A JPS62260053A (ja) | 1986-05-06 | 1986-05-06 | 化合物薄膜蒸着装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62260053A true JPS62260053A (ja) | 1987-11-12 |
| JPH0510423B2 JPH0510423B2 (enrdf_load_stackoverflow) | 1993-02-09 |
Family
ID=14319760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10215286A Granted JPS62260053A (ja) | 1986-05-06 | 1986-05-06 | 化合物薄膜蒸着装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62260053A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5529634A (en) * | 1992-12-28 | 1996-06-25 | Kabushiki Kaisha Toshiba | Apparatus and method of manufacturing semiconductor device |
| US5582879A (en) * | 1993-11-08 | 1996-12-10 | Canon Kabushiki Kaisha | Cluster beam deposition method for manufacturing thin film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5176182A (ja) * | 1974-12-27 | 1976-07-01 | Matsushita Electric Ind Co Ltd | Butsushitsuhakumakuseiseisochi |
-
1986
- 1986-05-06 JP JP10215286A patent/JPS62260053A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5176182A (ja) * | 1974-12-27 | 1976-07-01 | Matsushita Electric Ind Co Ltd | Butsushitsuhakumakuseiseisochi |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5529634A (en) * | 1992-12-28 | 1996-06-25 | Kabushiki Kaisha Toshiba | Apparatus and method of manufacturing semiconductor device |
| US5582879A (en) * | 1993-11-08 | 1996-12-10 | Canon Kabushiki Kaisha | Cluster beam deposition method for manufacturing thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0510423B2 (enrdf_load_stackoverflow) | 1993-02-09 |
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