JPS62259483A - Position detection device - Google Patents
Position detection deviceInfo
- Publication number
- JPS62259483A JPS62259483A JP61102765A JP10276586A JPS62259483A JP S62259483 A JPS62259483 A JP S62259483A JP 61102765 A JP61102765 A JP 61102765A JP 10276586 A JP10276586 A JP 10276586A JP S62259483 A JPS62259483 A JP S62259483A
- Authority
- JP
- Japan
- Prior art keywords
- position detection
- detection device
- oxide
- conductive layer
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 53
- 239000011651 chromium Substances 0.000 claims abstract description 14
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 13
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 10
- 239000011575 calcium Substances 0.000 abstract description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010931 gold Substances 0.000 abstract description 6
- 229910052737 gold Inorganic materials 0.000 abstract description 6
- 230000008859 change Effects 0.000 abstract description 4
- 229910052791 calcium Inorganic materials 0.000 abstract description 3
- 230000004044 response Effects 0.000 abstract description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical group [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract description 2
- MOUPNEIJQCETIW-UHFFFAOYSA-N lead chromate Chemical group [Pb+2].[O-][Cr]([O-])(=O)=O MOUPNEIJQCETIW-UHFFFAOYSA-N 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000004043 responsiveness Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000004397 blinking Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 235000010216 calcium carbonate Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- ZWPVWTIRZYDPKW-UHFFFAOYSA-N chromium(VI) oxide peroxide Inorganic materials [O-2].[O-][Cr]([O-])(=O)=O ZWPVWTIRZYDPKW-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Focusing (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Optical Transform (AREA)
- Automatic Focus Adjustment (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、鎗とクロムとを含有する酸化物を利用した位
置検出装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a position detection device using a spear and an oxide containing chromium.
〈従来の技術）
例えばカメラのオートフォーカス機構を始めとして各種
光学装置における位置、角麿簀の測定を行う場合、光起
電力効果を有するａ膜祠料からなる位置検出装置が用い
られる。(Prior Art) For example, when measuring the position and angle of various optical devices such as the autofocus mechanism of a camera, a position detection device made of an a-film abrasive material having a photovoltaic effect is used.
このにうな装置として従来第９図に示すように、半導体
材料として特にシリコンを用いたＰＩＮフ４トダイオー
ドが知られている。同図で１はＰ型シリコン層、２は■
型（Ｉｎｔｒｉｎｓｉｃ高比抵抗）シリコン層、３はＮ
型シリコン層で上記Ｐ型シリコン層１には出力電極Ｔ１
、Ｔ２が設（ブられると共（こ、Ｎ型シリコ２層３に
は出力電極Ｔ３が設けられる。As shown in FIG. 9, a PIN photodiode using silicon as a semiconductor material is conventionally known as such a device. In the same figure, 1 is a P-type silicon layer, 2 is ■
type (intrinsic high resistivity) silicon layer, 3 is N
In the P-type silicon layer 1, there is an output electrode T1.
, T2 are provided, and an output electrode T3 is provided on the N-type silicon 2 layer 3.
このような構造のＰＩＮフォトダイオードにおいて、矢
印方向から光か照Ｑ」されるとこの光はＰ型シリコン層
１によって電流に変換されいわゆる光電変換されるので
、この電流は端子Ｔ１．Ｔ２とＴ３との間に出ツクされ
る。In a PIN photodiode having such a structure, when light is emitted from the direction of the arrow, this light is converted into a current by the P-type silicon layer 1 and is so-called photoelectric conversion, so that this current is transferred to the terminal T1. It is issued between T2 and T3.
ところでこのようなＰＩＮフ４トダイオードからなる装
置は、アナログ足で位置信号が得られるので位置分解能
が優れているという利点がおる半面、位置信号の直線性
が劣っているという欠点がある。By the way, such a device consisting of a PIN foot diode has the advantage of excellent position resolution because the position signal can be obtained using an analog foot, but has the disadvantage that the linearity of the position signal is poor.
この欠点を除くためにデジタル量で位置信号が１９られ
るＣ ＣＤ （Ｃｈａｒｇｅ Ｃｏｕｐｌｅｄ Ｄｅｖ
ｉｃｅ）を位置検出装置として用いることが行われてい
るが、このＣＣＤは位置分解能の点で配線形成等に適用
される微細加工技術の精度上の制限を受けるという欠点
がある。In order to eliminate this drawback, a CCD (Charge Coupled Dev
CCD (ice) has been used as a position detection device, but this CCD has a disadvantage in that it is subject to accuracy limitations of microfabrication technology applied to wiring formation etc. in terms of position resolution.
（発明が解決しようとする問題点）
このように従来の位置検出装置には種々の問題点があっ
た。(Problems to be Solved by the Invention) As described above, the conventional position detection device has various problems.
ところで本出願人は先にｆｆ１ＰｂとクロムＣｒとを含
有する酸化物を利用した充電変換装置を特願昭５３−２
０５８３号（特公昭５５−３５８７４号）として出願し
た。当該出願の光電変換装置は光を照射することにより
光起電ツノか発生する光電変換効果を利用したものであ
ったが、本願発明者らが種々実験を１１っだところ、照
射する光の位置を変化させることによって前記装置の検
出信号が変化するという現象を見い出した。しかもその
応答性にぬれていることが判った。By the way, the present applicant previously filed a patent application for a charge conversion device using an oxide containing ff1Pb and chromium Cr.
The application was filed as No. 0583 (Japanese Patent Publication No. 55-35874). The photoelectric conversion device of the application utilized the photoelectric conversion effect generated by photovoltaic horns when irradiated with light, but the inventors of the present application conducted various experiments and found that the position of the irradiated light was We have discovered a phenomenon in which the detection signal of the device changes by changing the . Moreover, it was found that the responsiveness was impressive.
＼Ｖ賎載ｉへ１１〜問類ｊい
本発明は前記のような現象に着目して成されたものであ
り、応答性に優れた位置検出装置を提供することを目的
とするものでおる。The present invention has been made by focusing on the above-mentioned phenomenon, and its purpose is to provide a position detection device with excellent responsiveness. .
［発明の構成］
（問題点を解決するための手段）
上記目的を達成するために本発明はＭｌとクロムとを含
有する酸化物に導電層を形成してなることを特徴とする
ものである。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention is characterized in that a conductive layer is formed on an oxide containing Ml and chromium. .
（作 用）
鎗とクロムを含む酸化物に導電層を介して光を照Ｑ＝ｌ
Ｌ／てその位置を変化さけるとその変化に対応した出
力信号を得ることができるので応答性に優れた位置検出
装置が得られる。(Effect) Light is shined on the spear and chromium-containing oxide through the conductive layer Q=l
By avoiding a change in the position of L/, an output signal corresponding to the change can be obtained, so a position detection device with excellent responsiveness can be obtained.
（実施例）
第１図は本発明実施例の位置検出装置の具体例を示すも
ので、１０は可視光領１０．（約０．４μｍ−０，８μ
ｍの波長領域）に光起電力効果を有するクロム酸鉛Ｐｂ
２ＣｒＯ５の組成のＰｂの一部かカルシウムＣａで置換
された酸化物で、この酸化物１０の表面には半透明状の
導電層たる１絹の金電極１１．１２がギＶツブＧを介し
て形成されている。(Embodiment) FIG. 1 shows a specific example of a position detection device according to an embodiment of the present invention, in which 10 is a visible light region 10. (approximately 0.4μm-0.8μm
Lead chromate Pb that has a photovoltaic effect in the wavelength range of
This is an oxide in which a part of Pb with a composition of 2CrO5 is substituted with calcium Ca, and on the surface of this oxide 10, a translucent conductive layer, 1 silk gold electrode 11. It is formed.
このにうな構造の位置検出装置は以下のような製造工程
によって製造される。The position detection device having this structure is manufactured by the following manufacturing process.
Ｐｂ２ＣｒＯ５の組成となした成分に、２価金属元素の
酸化塩化物としてＣａＣＯ３を２０ｍｏ１％添加した組
成となる如く秤■した。この原１′」をポリエヂレン製
ポットで１０〜１５時間湿式混合し、乾燥後４００〜５
００ ′Ｃにて２時間にわたって仮焼成を行った。仮焼
成後ボールミルにて１０〜１５時間粉砕を行い粒径約１
μｍ程度とした。この仮焼成粉末にバインダーを８口え
、１℃ｏｎ／ｃｔｉで加圧成形した。更に成形体を６５
０〜９００ ’Ｃにて２時間焼成し焼結体を得た。The components were weighed so as to have a composition of Pb2CrO5, with 20 mo1% of CaCO3 added as an oxidized chloride of a divalent metal element. This raw material 1' was wet mixed in a polyethylene pot for 10 to 15 hours, and after drying,
Temporary firing was performed at 00'C for 2 hours. After pre-calcination, pulverize in a ball mill for 10 to 15 hours to obtain a particle size of approximately 1.
It was about μm. Eight binders were added to this calcined powder, and the powder was press-molded at 1° C. on/cti. Furthermore, 65 molded bodies
A sintered body was obtained by firing at 0 to 900'C for 2 hours.
このにうな焼結体を加工し、厚さ２．８ｍｔｎ、直径１
６Ｍの円盤状（板状）となした前記Ｐｂ２Ｃｒｏｓ酸化
物１０を形成した。次に熱着法によって厚ざ４００Ａの
金電極１１．１２を形成した。This sintered body was processed to have a thickness of 2.8 mtn and a diameter of 1 mm.
The Pb2Cros oxide 10 having a 6M disk shape (plate shape) was formed. Next, gold electrodes 11 and 12 having a thickness of 400 A were formed by thermal bonding.
第２図は１組の金電極１１．１２のパターンを示すもの
で、これら金電極１１．１２はギＰツブＧを介してＸ方
向の１次元方向に配置され１次元位置検出用に使用され
る。各数値はパターン司法（ｍｍ）の−例を示している
。また第３図は金電）へ１３．１４，１５．１６．１７
が複数組Ｘ方向及びＹ方向の２次元方向に配置されたパ
ターン例を示すもので、２次元位置検出用に使用される
。Fig. 2 shows a pattern of a set of gold electrodes 11, 12, which are arranged in one dimension in the X direction via a pin G and are used for one-dimensional position detection. Ru. Each value indicates an example of the pattern size (mm). Figure 3 also shows Kinden) on 13.14, 15.16.17
This shows an example of a pattern in which a plurality of sets are arranged in two-dimensional directions in the X direction and the Y direction, and is used for two-dimensional position detection.
次に本発明実施例の作用を説明する。Next, the operation of the embodiment of the present invention will be explained.
第１図の位置検出装置を第４図に示すような測定装首を
利用して光起電ツノを測定した。The photovoltaic horn was measured using the position detection device shown in FIG. 1 and a measuring neck as shown in FIG.
第４図において、１８は光源、１９はチョッパー、２０
はスリット板、２１はテーブル、２２は位置検出装置、
２３はペンレコーダでおる。光源１８としては○トＩＰ
（Ｏｖｅｒ ｔｌｅａｄ Ｐｒｏｊｅｃｔｉｏｎ）ラ
ンプを用い、照射光はチョッパー１９によって０゜５１
１２／Ｓでオン、オフされて位置検出装置２２に照射さ
れる。照射光の形状と位置は、スリット板２０上のスリ
ットの形状及びテーブル２１上に取り（＝Ｊけられたマ
イクロメータによって調節される。In FIG. 4, 18 is a light source, 19 is a chopper, and 20
is a slit plate, 21 is a table, 22 is a position detection device,
23 is a pen recorder. As the light source 18, ○ IP
(Over tlead projection) lamp is used, and the irradiation light is 0°51 by a chopper 19.
The light is turned on and off at 12/S, and the position detection device 22 is irradiated. The shape and position of the irradiation light are adjusted by the shape of the slit on the slit plate 20 and a micrometer placed on the table 21.
第５図はこのようにして得られた第２図の電極パターン
（装置へ）の位置検出特性を示すもので、スリット面積
が０．３０Ｘ８００ （＃２）のスリット板２０を用い
て光照射を行った場合で、＠ｌ＠は光起電圧、横軸は光
照射位置を示している。第２図の電極パターンのＸ方向
に沿って順次光照射位置をずらしていった時、電極１１
．１２の対向側に到達した時に光起電圧が増加し、また
電極１１と１２とではその極性が反転することを示して
いる。すなわち第５図の特性は、光起電圧の発生には、
電極’１１．１２の対向側に光照射を行うと有効でおり
、電極１１．１２の反対側への光源ｑ：ｌｌはあまり寄
与していないことを示している。例えば電極１１の対向
側に光照射を行ったｌ）は約０゜８Ｖの光起電圧が得ら
れ、同様にして電（へ１２の対向側に光照射を行った時
は約−０，８Ｖの光起電圧を１ｑることかできる。また
電極１１．１２の対向側では光の照ｑ」位置によって光
起電圧の極性が反転するが、このことは左右いずれの電
極への光照射においても光が照射された電（セに正電圧
か発生し、２つの電圧の差が位置検出装置の出力となる
ことを示している。Fig. 5 shows the position detection characteristics of the electrode pattern (to the device) of Fig. 2 obtained in this way. In this case, @l@ represents the photovoltaic voltage, and the horizontal axis represents the light irradiation position. When the light irradiation position was sequentially shifted along the X direction of the electrode pattern in FIG.
．． It is shown that the photovoltaic voltage increases when reaching the opposite side of electrode 12, and that the polarity of electrodes 11 and 12 is reversed. In other words, the characteristics shown in Figure 5 indicate that for the generation of photovoltaic voltage,
Light irradiation on the opposite side of electrode '11.12 is effective, and the light source q:ll on the opposite side of electrode 11.12 does not contribute much. For example, when the opposite side of the electrode 11 is irradiated with light, a photovoltaic voltage of about 0.8 V is obtained, and when the opposite side of the electrode 12 is irradiated with light in the same way, a photovoltaic voltage of about -0.8 V is obtained. The photovoltaic voltage can be reduced to 1q.Also, on the opposite sides of the electrodes 11 and 12, the polarity of the photovoltaic voltage is reversed depending on the position of the light irradiation, and this means that when light is irradiated to either the left or right electrode, This shows that a positive voltage is generated at the voltage irradiated with light, and the difference between the two voltages becomes the output of the position detection device.
第６図はスリット面積が０．２１ Ｘ８００（Ｉ閘２）
のスリット板２０を用いて装置Ａの特に電（へ１１゜１
２の周辺部のみに光照射を行った場合の位置検出特性を
示すものである。In Figure 6, the slit area is 0.21 x 800 (I lock 2)
Using the slit plate 20 of
2 shows the position detection characteristics when light is irradiated only to the peripheral area of No. 2.
この特性は、位置検出誤差１位置分解能及び有効測定範
囲がそれぞれ、±３μｍ、０．５μｍ及び１９０μｍで
あることを示しており、直線性に優れていることを意味
している。This characteristic indicates that the position detection error 1-position resolution and effective measurement range are ±3 μm, 0.5 μm, and 190 μm, respectively, which means that the linearity is excellent.
第７図は第３図の電極パターン（装置Ｂ）の位置検出特
性を示すもので、スリット面積として中央部の電極１３
よりも少し広い面積の４．８×４．８ （ｍ２）のスリ
ット板２０を用いて光照射を行った場合について示して
いる。電極パターンＸ方向に沿って順次光照射位置をず
らすことにより左右電に１５．１７間に光起電圧か発生
し、同様にＹ方向に治って順次光照射位置をずらすこと
により上下電極１４．１６間に光起電圧が発生するので
、２次元の光の位置検出が可能となる。第７図の特性は
、位置検出誤差、位置分解能及び有効測定範囲がそれぞ
れ、±２０μｍ、７μｍ及び１．５２μｍでおることを
示しており、直線性に漫れていることを意味している。Figure 7 shows the position detection characteristics of the electrode pattern (apparatus B) in Figure 3, and shows the slit area of the central electrode 13.
The case is shown in which light irradiation is performed using a slit plate 20 of 4.8×4.8 (m2), which has an area slightly larger than that shown in FIG. By sequentially shifting the light irradiation position along the electrode pattern X direction, a photovoltaic voltage is generated between 15.17 and 15.17 on the left and right electrodes, and in the same way, by sequentially shifting the light irradiation position in the Y direction, the upper and lower electrodes 14.16 Since a photovoltaic voltage is generated between the two, two-dimensional position detection of light becomes possible. The characteristics shown in FIG. 7 indicate that the position detection error, position resolution, and effective measurement range are ±20 μm, 7 μm, and 1.52 μm, respectively, which means that linearity is achieved.
以上の実施例のように光照射位置及び光源射面偵を変化
ざＵることにより光起電圧が変化することは、この装置
か位置セン１ノー−として適用可能てめることを示して
いる。また電極パターン及び光源ｑツ方法を工夫するこ
とによって、より大ぎな光起電圧を取り出ける可能性を
示唆している。The fact that the photovoltaic voltage changes by changing the light irradiation position and the light source projection surface as in the above embodiments shows that this device can be applied as a position sensor. . It also suggests the possibility of generating a larger photovoltaic voltage by devising the electrode pattern and light source method.
２次元位置検出用心、（〜パターンにあける上下方向（
Ｙ方向）及び左右方向（Ｘ方向）成分に位置信号を分離
して同時に得られることを確認するため、光源として緑
色ＬＥＤを点滅使用したＡＣ動作型２次元位置検出シス
テムを用いて位置検出を行い第８図に示すような結果を
１７だ。同図は０゜１ ｍｍ間隔で光を基盤の目に沿っ
てずらした時にｊ９られだ位置検出結果を示している。Be careful of two-dimensional position detection (~vertical direction in the pattern)
In order to confirm that the position signal can be separated into components in the Y direction) and left/right direction (X direction) and obtained simultaneously, position detection was performed using an AC-operated two-dimensional position detection system that uses a blinking green LED as a light source. The result is 17 as shown in Figure 8. The figure shows the result of detecting the position of j9 when the light is shifted along the eye of the base at intervals of 0°1 mm.
上下及び左右方向に明瞭に位置検出か行われていること
を示している。This shows that position detection is clearly performed in the vertical and horizontal directions.
以上のＰｂ２Ｃｒ’０５と同様に、Ｐｂ５ＣｒＯ３、Ｐ
ｂＣｒ０／Ｉの組成のＰｂの一部をＣａて買換した酸化
物の焼結体を形成し、各々導電層を設けることによって
位置検出１を形成した。Similar to the above Pb2Cr'05, Pb5CrO3, P
A sintered body of an oxide having a composition of bCr0/I in which a part of Pb was replaced with Ca was formed, and a conductive layer was provided on each sintered body to form the position detection 1.
またＰｂＱとＣｒ２Ｏ３の比率をＩＩ！ｊ１次変化させ
て配合し、前記実施例と同様な方法で位置検出装置を形
成した。その結果Ｃｒ２（ｈが７０ｔｏｏｌ：’二双上
となると光電変換効果は生じなくなった。またＰｂＱが
９９．５ｍｏｌ％以上となった場合も光電変換効果はほ
とんど生じなくなった。Also, the ratio of PbQ and Cr2O3 is II! A position detection device was formed in the same manner as in the previous example by mixing the components with a first-order change. As a result, when Cr2(h) exceeded 70tool:'2, no photoelectric conversion effect occurred.Also, when PbQ exceeded 99.5 mol%, almost no photoelectric conversion effect occurred.
本発明の位置検出装置は次のような方法によっても製造
される。The position detection device of the present invention can also be manufactured by the following method.
ｂ２ｃｒｏｓの組成となした成分に、２価金属元素Ｃａ
の醸化塩化物としてＣａｃｏ３を２Ｑｍｏ１％添加した
組成となるごとく秤量した。この原料をポリエチレン製
ポットで１０〜１５時間湿式混合し、乾燥（Ｕ４００〜
５００ ’Ｃにて２時間にわたって仮焼成を行った焼成
後ボールミルにて１０〜１５時間粉砕を行い粒径約１μ
ｍ程度とした。この仮焼成粉末にバインダーを加え、１
ｔｏｎ／ｃｍで加圧成形した。更に成形体を６５０〜９
００ ’Ｃにて２時間焼成し焼結体を得た。The divalent metal element Ca is included in the composition of b2cros.
The composition was weighed to obtain a composition in which 2Qmo1% of Caco3 was added as a brewed chloride. These raw materials were wet mixed in a polyethylene pot for 10 to 15 hours, and then dried (U400 to
Pre-calcined at 500'C for 2 hours, then crushed in a ball mill for 10-15 hours to obtain a particle size of approximately 1μ.
It was set to about m. Add a binder to this pre-fired powder,
Pressure molding was performed at ton/cm. Furthermore, the molded body is 650~9
A sintered body was obtained by firing at 00'C for 2 hours.
次にこのＰｂ２ＣｒＯ５焼結体からなる焼結体をターゲ
ット（蒸発源）として用い、次のように電子ビーム蒸着
法によってガラス基板上にＰｂ２ＣｒＯ５酸化物の薄膜
を形成した。Next, using this sintered Pb2CrO5 sintered body as a target (evaporation source), a thin film of Pb2CrO5 oxide was formed on the glass substrate by electron beam evaporation as follows.
すなわち電子ビーム蒸着装置の真空容器内に上記Ｐｂ２
ＣｒＯ５焼結体を円板状となしたターゲットとガラス基
板とを配置し、カラス基板を２００６Ｃ１電子銃加速電
圧を５ＫＶ、最大エミッション電流を１００１１１Ａ、
容器内の真空度を４Ｘ１０−５Ｔｏｒｒに保った状態で
蒸着を行った。蒸着時間を約１〜２時間に設定すること
により、ガラス基板上に約１．１５μｍのＰｂ２ Ｃｒ
ｙ５Ｗ化物を形成した。このようにして得られたガラス
基板をｐｂを含んだ雰囲気内で、４７５°Ｃて１．５時
間熱処理を行った。熱処理後Ｐｂ２Ｃｒｙｓ ｍ化物上
に金を真空蒸着することによって半透明状の一対の電極
を形成した。これによってガラス基板、Ｐｂ２ｃｒｏｓ
（Ｐｂの一部がＣａで置換されている）薄膜及び金
層から構成される装置検出装置が得られる。That is, the above Pb2 is placed in the vacuum chamber of the electron beam evaporation device
A disk-shaped target made of CrO5 sintered body and a glass substrate were arranged, and the glass substrate was heated with a 2006C1 electron gun acceleration voltage of 5KV, maximum emission current of 100111A,
Vapor deposition was performed while maintaining the degree of vacuum in the container at 4×10 −5 Torr. By setting the deposition time to about 1-2 hours, about 1.15 μm of Pb2Cr was deposited on the glass substrate.
y5W compound was formed. The glass substrate thus obtained was heat treated at 475° C. for 1.5 hours in an atmosphere containing PB. After the heat treatment, gold was vacuum deposited on the Pb2Crys mide to form a pair of translucent electrodes. This allows the glass substrate, Pb2cros
A device detection device is obtained consisting of a thin film (with some of the Pb replaced by Ca) and a gold layer.
このような製法によっても前の製法によって得られた位
置検出装置と同様な作用、効果をｊ７ることができる。This manufacturing method also provides the same functions and effects as the position detection device obtained by the previous manufacturing method.
またＰｂＯとＣｒ２Ｏ３の比率の範囲についても同様で
ある。The same applies to the range of the ratio of PbO and Cr2O3.
ざらに各実施例で用いられたＰｂとＣｒとを含む酸化物
にあける、Ｐｂの一部を置換するための元素としてはＣ
ａに限らず、他にＳｒ、Ｂａ等の２価金属元素を同様に
用いることができる。Roughly speaking, C was used as an element to replace a part of Pb in the oxide containing Pb and Cr used in each example.
In addition to a, other divalent metal elements such as Sr and Ba can be used similarly.
本実施例のようにＰｂ２Ｃｒｙｓ Ｗ化物のＰｂの一部
を２価金属元素によって置換することにより、前述され
たような効果の他に光応答速度を改善することかできる
ので、本発明の位置検出装置は各種光学装置のみならず
、変位測定装置、レーザ装置、医用機器等に広範囲に適
用することかできる。By substituting a part of Pb in Pb2Crys W oxide with a divalent metal element as in this example, in addition to the above-mentioned effects, the optical response speed can be improved. The device can be widely applied not only to various optical devices but also to displacement measuring devices, laser devices, medical equipment, etc.
［発明の効果］
以上述ｌ〈で明らかなように本発明によれば、鉛とクロ
ムとを含有する酸化物に導電層を形成するようにしたも
のであるから、分解能及び直線性に浸れた位置信号を得
ることができ、かつ優れた応答性を１ｑることかできる
。[Effects of the Invention] As is clear from the above section 1, according to the present invention, since the conductive layer is formed on an oxide containing lead and chromium, the resolution and linearity are improved. It is possible to obtain position signals and achieve excellent responsiveness.
第１図は本発明実施例の位置検出装置を示す側面図、第
２図及び第３図は本発明位置検出装置の異なった電極パ
ターンを示す正面図、第４図乃至第７図は本発明位置検
出装置の位置検出特性図、第８図は本発明位置検出装置
の分離特性図、第９図は従来例を示す側面図でおる。
１０・・・鉛とクロムとを含有する酸化物、１１．１２
，１３，１４，１５．１６．１７・・・電極、
１９・・・ヂョッパー、２０・・・スリット板、２２・
・・位置検出装置。
ＬＩＧＨＴ
ｌｏ Ｐｂ２ＣｒＯ５
第１図
Ｄｅｖｉｃｅ”
第２図
ＩＬＬＬＪＭＩＮＡＴＩＯＮ ＰＯ５ＩＴＩＯＮ（ｍｍ
）イ照ガこ置−
第５図
光熱１寸ど置−
第６図
ＩＬＬＵＭＩＮＡＴＩＯＮ ＰＯ５ＩＴＩＯＮ（ｍｍ）
叱ピＵと１−
第７図
−・雷１・１線
０．１ ｍｍ
−−−−ｚ樽様 □
第８図
第 ９ 図
手続補正書
１、事件の表示
昭和６１年特許願第１０２７６５号
己０発明の名称
位置検出装置
）、補正をする者
事件との関係 特許出願人
住所 神奈川県横須賀市二葉１丁目４９番１８号氏名
戸 １） 耕 司 （はが１名）１、代理人
）、補正命令の日付
自 発
７、補正の内容
（１）特許請求の範囲を別紙の通り訂正する。
（２）明細言第１０頁第１１行目から第１２行目に記載
のｒＰｂ５ＣｒＯ３ＪをｒＰｂｓＣｒＯｅＪに訂正する
。
特許請求の範囲
（１）少なくとも鉛とクロムとを含む酸化物に導電層を
形成してなることを特徴とする位置検出装置。
（２）前記酸化物が板状に形成された焼結体磁器である
特許請求の範囲第１項記載の位置検出装置。
（３）前記酸化物が真空中で形成された薄膜である特許
請求の範囲第１項記載の位置検出装置。
（４）前記鉛とクロムがＰｂＯに換算して３０〜９９．
５ｍｏ＋％、Ｃｒ２Ｏ３に換算して０．５〜７ＱｍＯ１
％の組成比を有するｖｒ許請求の範囲第１項記載の位置
検出装置。
（５）前記酸化物がＰｂｓ Ｃｒｙｓ 、Ｐｂ２ｃｒ。
ｓ 、ＰｂＣｒＯ４の少なくとも一種を含有する特許請
求の範囲第１項記載の位置検出装置。
（６）前記導電層が半透明状である特許請求の範囲第１
項記載の位置検出装置。
（７）前記導電層はギャップを介して分割されている特
許請求の範囲第１項記載の位置検出装置。
（８） 前記導電層が二次元的に配列されてなる特許
請求の範囲第１項記載の位置検出装置。FIG. 1 is a side view showing a position detecting device according to an embodiment of the present invention, FIGS. 2 and 3 are front views showing different electrode patterns of the position detecting device of the present invention, and FIGS. FIG. 8 is a position detection characteristic diagram of the position detection device, FIG. 8 is a separation characteristic diagram of the position detection device of the present invention, and FIG. 9 is a side view showing a conventional example. 10... Oxide containing lead and chromium, 11.12
, 13, 14, 15. 16. 17... electrode, 19... chopper, 20... slit plate, 22...
...Position detection device. LIGHT lo Pb2CrO5 Fig. 1Device” Fig. 2 ILLJMINATION PO5ITION (mm
) Illumination PO5ITION (mm) Figure 5 Light and heat 1 inch apart Figure 6
Scolding pi U and 1- Figure 7-・Lightning 1・1 line 0.1 mm -----z Mr. Taru □ Figure 8 Figure 9 Procedural amendment 1, case indication Patent application No. 102765 of 1985 Name of self-zero invention position detection device), relationship with the case of the person making the amendment Patent applicant address 1-49-18 Futaba, Yokosuka City, Kanagawa Prefecture Name
1) Koji (1 person) 1, agent), date of amendment order 7, contents of amendment (1) The scope of claims is amended as shown in the attached sheet. (2) rPb5CrO3J written on page 10, line 11 to line 12 of the specification is corrected to rPbsCrOeJ. Claims (1) A position detection device characterized in that a conductive layer is formed on an oxide containing at least lead and chromium. (2) The position detection device according to claim 1, wherein the oxide is a plate-shaped sintered ceramic. (3) The position detection device according to claim 1, wherein the oxide is a thin film formed in vacuum. (4) The lead and chromium are 30 to 99% in terms of PbO.
5mo+%, 0.5 to 7QmO1 in terms of Cr2O3
%. The position detection device according to claim 1. (5) The oxide is PbsCrys or Pb2cr. The position detection device according to claim 1, which contains at least one of PbCrO4 and PbCrO4. (6) Claim 1, wherein the conductive layer is semitransparent.
The position detection device described in Section 1. (7) The position detection device according to claim 1, wherein the conductive layer is divided through gaps. (8) The position detection device according to claim 1, wherein the conductive layer is arranged two-dimensionally.
Claims (8)
形成してなることを特徴とする位置検出装置。(1) A position detection device characterized by forming a conductive layer on an oxide containing at least lead and chromium.
特許請求の範囲第１項記載の位置検出装置。(2) The position detection device according to claim 1, wherein the oxide is a plate-shaped sintered ceramic.
請求の範囲第１項記載の位置検出装置。(3) The position detection device according to claim 1, wherein the oxide is a thin film formed in vacuum.
５ｍｏｌ％、Ｃｒ＿２Ｏ＿３に換算して０．５〜７０ｍ
ｏｌ％の組成比を有する特許請求の範囲第１項記載の位
置検出装置。(4) The lead and chromium are 30 to 99% in terms of PbO.
5 mol%, 0.5 to 70 m in terms of Cr_2O_3
The position detection device according to claim 1, which has a composition ratio of 0.1%.
Ｏ＿５、ＰｂＣｒＯ＿４の少なくとも一種を含有する特
許請求の範囲第１項記載の位置検出装置。(5) The oxide is Pb_5CrO_3, Pb_2Cr
The position detection device according to claim 1, containing at least one of O_5 and PbCrO_4.
項記載の位置検出装置。(6) Claim 1, wherein the conductive layer is semitransparent.
The position detection device described in Section 1.
許請求の範囲第１項記載の位置検出装置。(7) The position detection device according to claim 1, wherein the conductive layer is divided through gaps.
の範囲第１項記載の位置検出装置。(8) The position detection device according to claim 1, wherein the conductive layer is arranged two-dimensionally.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10276586A JP2597477B2 (en) | 1986-05-02 | 1986-05-02 | Position detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10276586A JP2597477B2 (en) | 1986-05-02 | 1986-05-02 | Position detection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62259483A true JPS62259483A (en) | 1987-11-11 |
| JP2597477B2 JP2597477B2 (en) | 1997-04-09 |
Family
ID=14336278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10276586A Expired - Lifetime JP2597477B2 (en) | 1986-05-02 | 1986-05-02 | Position detection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2597477B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02139968A (en) * | 1988-11-21 | 1990-05-29 | Koji Toda | Contact type line image sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5039109U (en) * | 1973-08-07 | 1975-04-22 | ||
| JPS54114096A (en) * | 1978-02-24 | 1979-09-05 | Tdk Corp | Photoelectric conversion device |
-
1986
- 1986-05-02 JP JP10276586A patent/JP2597477B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5039109U (en) * | 1973-08-07 | 1975-04-22 | ||
| JPS54114096A (en) * | 1978-02-24 | 1979-09-05 | Tdk Corp | Photoelectric conversion device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02139968A (en) * | 1988-11-21 | 1990-05-29 | Koji Toda | Contact type line image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2597477B2 (en) | 1997-04-09 |
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