JPS6131361A - Manufacture of ceramic wafer - Google Patents

Manufacture of ceramic wafer

Info

Publication number
JPS6131361A
JPS6131361A JP15050384A JP15050384A JPS6131361A JP S6131361 A JPS6131361 A JP S6131361A JP 15050384 A JP15050384 A JP 15050384A JP 15050384 A JP15050384 A JP 15050384A JP S6131361 A JPS6131361 A JP S6131361A
Authority
JP
Japan
Prior art keywords
porcelain
wafer
unsintered
fusing agent
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15050384A
Other languages
Japanese (ja)
Inventor
正一 登坂
健一 星
鬼形 和治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP15050384A priority Critical patent/JPS6131361A/en
Publication of JPS6131361A publication Critical patent/JPS6131361A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は例えばコンデンサ等に用いられる磁器ウェハの
製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of manufacturing a ceramic wafer used for example in capacitors.

(従来の技術) 従来、磁器ウェハは次のようにして製造される。(Conventional technology) Conventionally, porcelain wafers are manufactured as follows.

磁器組成物原料と有機バインダとを混合して得られた泥
漿をドクターブレード等の手段で薄く引き伸して未焼結
!i器レシート作成し、次で、この未焼結磁器シートを
予め定められた形状に切断して未焼結磁器ウェハを得る
。このウェハa、を、第2図に示すように、焼結用基板
すの上に融着や反応を防止するための融着防止剤である
粒径5μmの例えばジルコニア、アルミナ粉末Cを薄く
敷いた上に置き、更にこのウェハa、の上に一粒子層が
形成されるように薄くアルミナ粉末Cを敷くことと、未
焼結磁器ウェハを置くこととを交互にくりかえして未焼
結磁器ウェハa2・・・・・・とを積み重ね、最上段に
未焼結磁器ウェハの5〜10倍程の厚みのジルコニア焼
結板dを重しとして置き、その状態で焼結する。
The slurry obtained by mixing the raw materials for the porcelain composition and the organic binder is stretched thinly using a doctor blade or other means to create an unsintered product! A receipt is prepared, and then this unsintered porcelain sheet is cut into a predetermined shape to obtain an unsintered porcelain wafer. As shown in Fig. 2, this wafer a is coated with a thin layer of zirconia or alumina powder C having a particle size of 5 μm, which is an anti-fusing agent to prevent fusion and reaction, on a sintering substrate. The unsintered porcelain wafer is then placed on top of the wafer a, and the process of alternately spreading alumina powder C thinly so that one particle layer is formed on top of the wafer a and placing the unsintered porcelain wafer on top of the unsintered porcelain wafer is repeated. a2... are stacked, and a zirconia sintered plate d, which is about 5 to 10 times thicker than the unsintered porcelain wafer, is placed on the top layer as a weight, and sintered in that state.

(発明解決しようとする問題点) 従来の上記磁器ウェハの製造方法は、融着防止剤が粉末
なので薄く敷いても磁器ウェハには凹凸ができ平滑な面
が得られないため実用上不都合が生ずる程反った磁器ウ
ェハが多数作成され易い。特定の長さのスリットを通過
(るか否かでこれを選別すると約半分が通過することが
できない。そこでこの反りの大きい磁器ウェハを再び積
重ね、重しをかけて焼結温度より 100℃程低い温度
で焼き直しを行うとその50%程が修正されるが、その
残りは修正されず不良品として破棄される。
(Problems to be Solved by the Invention) In the conventional method for manufacturing porcelain wafers, since the anti-fusing agent is a powder, even if it is spread thinly, the porcelain wafer will have unevenness and a smooth surface cannot be obtained, resulting in practical problems. Many warped porcelain wafers are likely to be produced. If you select whether or not they will pass through a slit of a certain length, about half of them will not be able to pass through.Therefore, these highly warped porcelain wafers are stacked again, and a weight is applied to heat the wafers to about 100°C above the sintering temperature. When reheating at a lower temperature, about 50% of the defects are corrected, but the rest is not corrected and is discarded as defective.

このように反りの少ない磁器ウェハを得るには、焼結の
工数及び材料の無駄が多くなる不都合が存した。
In order to obtain such a ceramic wafer with less warpage, there is a problem in that the number of sintering processes and the waste of materials are increased.

本発明は従来のかかる不都合の無い磁器ウェハの製造方
法を提供りることをその目的としたものである。
An object of the present invention is to provide a method for manufacturing porcelain wafers that does not have the above-mentioned disadvantages.

(問題点を解決づ“るための手段) 本発明は、磁器組成物原料とバインダとから成る未焼結
磁器ウェハと、融着防止剤粉末とバインダとから成る融
着防止剤つ■ハとを基板上に交互に積重ね、該未焼結磁
器ウェハを焼結づると共にバインダを焼失することを特
徴とする。
(Means for Solving the Problems) The present invention provides an unsintered porcelain wafer made of a ceramic composition raw material and a binder, and an anti-fusing powder made of an anti-fusing agent powder and a binder. are alternately stacked on a substrate, and the unsintered porcelain wafers are sintered and the binder is burned out.

、(作 用) 本発明の構成によれば、未焼結磁器ウェハと融着防止剤
ウェハとが平滑な面で互いに均一に接し、各未焼結磁器
ウェハの前面が均一に圧せられ、この状態で未焼結磁器
ウェハが焼結され、バインダが焼失づる。
(Function) According to the configuration of the present invention, the unsintered porcelain wafer and the anti-fusing agent wafer are in uniform contact with each other on smooth surfaces, and the front surface of each unsintered porcelain wafer is uniformly pressed. In this state, the unsintered porcelain wafer is sintered and the binder is burned away.

(実施例) 実施例1 Pb203 228.52 Cj、 Ti O□ 53
.27 g、lr O□ 81.159をボールミルで
湿式混合して850℃で2時間の仮焼き処理を行ない、
これを再びボールミルで粉砕した磁器組成物の粉末を1
00gと、ポリビニールブチラール89と、用材メチル
エチルケトン30gとをボールミルで15時間混合して
泥漿を作り、この泥漿をドクターブレード法によってポ
リエチレンプレフタレートフィルム上に塗布し、80℃
で30分乾燥した後該フィルムから剥離し801Lmの
厚さの未焼結磁器シートを作成した。
(Example) Example 1 Pb203 228.52 Cj, Ti O□ 53
.. 27 g, lr O□ 81.159 were wet mixed in a ball mill and calcined at 850°C for 2 hours,
1 powder of the porcelain composition was ground again using a ball mill.
00g, polyvinyl butyral 89, and 30g of raw material methyl ethyl ketone were mixed in a ball mill for 15 hours to make a slurry, and this slurry was coated on a polyethylene prephthalate film by the doctor blade method and heated at 80°C.
After drying for 30 minutes, the film was peeled off to produce an unsintered porcelain sheet with a thickness of 801 Lm.

次で、融着防止剤として使われる粒径3μmの1102
100gと、ポリビニールブチラール8gとメチルエチ
ルケトン30gとを混合して80uTrLの厚さの融着
防止剤シートを作成した。
Next, 1102 with a particle size of 3 μm used as an anti-fusing agent
100 g of polyvinyl butyral, 8 g of polyvinyl butyral, and 30 g of methyl ethyl ketone were mixed to prepare an anti-fusing agent sheet having a thickness of 80 uTrL.

この2種類のシートをそれぞれ外径30INRφの円形
に打ち扱き、未焼結磁器円形ウェハ(1)及び融着防止
剤円形ウェハ(2)どし、第1図示のように焼結に用い
る150#l#l角の基板(3)の1−に、これ等を融
着防止剤円形ウェハ(2)、未焼結磁器円形ウェハ(1
)の順で交互に20枚積車ねlこ 。
These two types of sheets are each shaped into a circular shape with an outer diameter of 30 INRφ, and an unsintered porcelain circular wafer (1) and an anti-fusing agent circular wafer (2) are formed into 150# used for sintering as shown in the first figure. Place these on the l#l square substrate (3) 1-, the anti-fusing agent circular wafer (2) and the unsintered porcelain circular wafer (1).
) The cat stacks 20 sheets alternately in this order.

これを空気中において、1200℃、2[15間の条件
で焼結した。焼結処理後、融着防止剤円形ウェハ(2)
はバインダのみが焼失し、融着防止剤は焼結されないか
ら指で融着防止剤ウェハ(2)を押すと容易にくずれて
粉体化し焼結された磁器円形ウェハは互に分離した。こ
の磁器円形ウェハは厚みが80μm1外径は24姻φで
あった。
This was sintered in air at 1200°C under conditions of 2[15°C]. After sintering process, anti-fusing agent circular wafer (2)
Since only the binder was burnt out and the anti-fusing agent was not sintered, when the anti-fusing agent wafer (2) was pressed with a finger, it easily collapsed and became powder, and the sintered porcelain circular wafers were separated from each other. This porcelain circular wafer had a thickness of 80 μm and an outer diameter of 24 mm.

このようにして製作した磁器円形ウェハ1000個につ
いて 130gmのスリットの通過テストをしだどころ
、18個のみがスリットを通過せず不良品であった。
When 1000 circular porcelain wafers thus produced were tested for passing through a 130 gm slit, only 18 did not pass through the slit and were defective.

実施例2 実施例1において、融着防止剤として7r02に代えて
A1□ 03を100gとしたこと以外は実施例1と同
じ方法及び同じ条件で磁器ウェハを作成した。試料10
00個について21個が不良品であった。
Example 2 A porcelain wafer was produced in the same manner and under the same conditions as in Example 1, except that 100 g of A1□03 was used instead of 7r02 as the anti-fusing agent. Sample 10
Out of 00 pieces, 21 pieces were defective.

実施例3 BaC03197,34gとTi 0279.9gとを
湿式混合し、800℃2時間の仮焼き処理を行ない、こ
れを再び粉砕した粉末を用いて実施例1と同じ方法及び
同じ条件で磁器ウェハを作成しICo試111000個
について12個が不良品であつIこ。
Example 3 Wet-mixed 34 g of BaC03197 and 279.9 g of Ti, performed calcination treatment at 800°C for 2 hours, and re-pulverized the resulting powder to form a porcelain wafer in the same manner and under the same conditions as in Example 1. Of the 111,000 ICo samples I created, 12 were defective.

実施例4 実施例1において、未焼結磁器ウェハの厚さを50g 
m、融お防止剤ウェハの厚さを401LTrLとした以
外は実施例1と同じ方法、同じ条件で磁器ウェハを作成
した。良品と不良品の選別を65gmのスリットによっ
て行なったところ試’141000個について31個が
不良品であった。
Example 4 In Example 1, the thickness of the unsintered porcelain wafer was 50 g.
Porcelain wafers were prepared in the same manner and under the same conditions as in Example 1, except that the thickness of the wafer was changed to 401 LTrL. When sorting between good and defective products was carried out using a 65 gm slit, 31 out of 141,000 samples were found to be defective.

比較例1 実施例1において、Fa着防止剤ウェハに代えて平均粒
径3amのジルコニア粉末を未焼結l111器基板の上
に薄く敷いたこと以外は実施例1と同じ条件及び同じ方
法で磁器ウェハを作成した。試料1000個について2
44個が不良品であった。
Comparative Example 1 Porcelain was prepared under the same conditions and in the same manner as in Example 1, except that instead of the Fa adhesion inhibitor wafer, zirconia powder with an average particle size of 3 am was thinly spread on the unsintered l111 substrate. Created a wafer. 2 for 1000 samples
44 items were defective.

比較例2 実施例4において、融着防止剤ウェハに代えて平均粒径
1uTrLのZrO,、の粉末を薄く敷いたこと以外は
実施例4と同じ方法及び同じ条件で磁器ウェハを作成し
た。実施例4と同じ条件で選別を行なったところ、試料
1000個について307個が不良品であった。
Comparative Example 2 A porcelain wafer was prepared in the same manner and under the same conditions as in Example 4, except that instead of the anti-fusing agent wafer, a thin layer of ZrO powder having an average particle size of 1 uTrL was spread. When sorting was carried out under the same conditions as in Example 4, 307 out of 1000 samples were found to be defective.

(発明の効果) 本発明は、磁器組成物原料とバインダとから成る未焼結
磁器ウェハと、融着防止剤粉末とバインダとから成る融
着防止剤ウェハとを基板上に交互に積重ね、該未焼結磁
器ウェハを焼結づると共にバインダを焼失するので、焼
結磁器ウェハのうち、不良となる程の反りを右Jるもの
が少なく、また焼き直し等の工程を必要としない等の効
果がある。
(Effects of the Invention) The present invention comprises stacking unsintered porcelain wafers made of a ceramic composition raw material and a binder and anti-fusing agent wafers consisting of an anti-fusing agent powder and a binder on a substrate alternately. Since the binder is burned out when the unsintered porcelain wafer is sintered, there are fewer sintered porcelain wafers that warp to the point of failure, and there is no need for processes such as reheating. There is.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の製造方法における未焼結磁器ウェハと
融着防止剤ウェハとの8!1層状態を示ず拡大側面図、
第2図は従来の製造方法における未焼結磁器ウェハと融
着防止剤粉末との積層状態を示す拡大側面図である。 (1)・・・未焼結磁器円形ウェハ (2)・・・融着防止剤円形ウェハ (3)・・・基板 特 許 出 願 人  太陽誘電株式会社i・1・ 代     理     人    北   村   
欣   9.′iノ外2名
FIG. 1 is an enlarged side view, not showing the 8!1 layer state of the unsintered porcelain wafer and the anti-fusing agent wafer in the manufacturing method of the present invention;
FIG. 2 is an enlarged side view showing a laminated state of an unsintered porcelain wafer and anti-fusing agent powder in a conventional manufacturing method. (1) Unsintered porcelain circular wafer (2) Anti-fusing agent circular wafer (3) Substrate patent Applicant Taiyo Yuden Co., Ltd. i.1 Agent Kitamura
Kin 9. 2 people other than 'i

Claims (1)

【特許請求の範囲】[Claims] 磁器組成物原料とバインダとから成る未焼結磁器ウェハ
と、融着防止剤粉末とバインダとから成る融着防止剤ウ
ェハとを基板上に交互に積重ね、該未焼結磁器ウェハを
焼結すると共にバインダを焼失することを特徴とする磁
器ウェハの製造方法。
Unsintered porcelain wafers made of a porcelain composition raw material and a binder and anti-fusing agent wafers made of an anti-fusing agent powder and a binder are alternately stacked on a substrate, and the unsintered porcelain wafers are sintered. A method for manufacturing a porcelain wafer, characterized in that the binder is burned out at the same time.
JP15050384A 1984-07-21 1984-07-21 Manufacture of ceramic wafer Pending JPS6131361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15050384A JPS6131361A (en) 1984-07-21 1984-07-21 Manufacture of ceramic wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15050384A JPS6131361A (en) 1984-07-21 1984-07-21 Manufacture of ceramic wafer

Publications (1)

Publication Number Publication Date
JPS6131361A true JPS6131361A (en) 1986-02-13

Family

ID=15498284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15050384A Pending JPS6131361A (en) 1984-07-21 1984-07-21 Manufacture of ceramic wafer

Country Status (1)

Country Link
JP (1) JPS6131361A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5194196A (en) * 1989-10-06 1993-03-16 International Business Machines Corporation Hermetic package for an electronic device and method of manufacturing same
JP2008130679A (en) * 2006-11-17 2008-06-05 Nichicon Corp Baking method of thermistor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5194196A (en) * 1989-10-06 1993-03-16 International Business Machines Corporation Hermetic package for an electronic device and method of manufacturing same
JP2008130679A (en) * 2006-11-17 2008-06-05 Nichicon Corp Baking method of thermistor element

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