JPS62278441A - Moisture sensing element - Google Patents
Moisture sensing elementInfo
- Publication number
- JPS62278441A JPS62278441A JP61122817A JP12281786A JPS62278441A JP S62278441 A JPS62278441 A JP S62278441A JP 61122817 A JP61122817 A JP 61122817A JP 12281786 A JP12281786 A JP 12281786A JP S62278441 A JPS62278441 A JP S62278441A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- humidity
- pb2cro5
- sensing element
- element according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011651 chromium Substances 0.000 claims abstract description 13
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 12
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 239000010931 gold Substances 0.000 abstract description 4
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 7
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- QFLWZFQWSBQYPS-AWRAUJHKSA-N (3S)-3-[[(2S)-2-[[(2S)-2-[5-[(3aS,6aR)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]pentanoylamino]-3-methylbutanoyl]amino]-3-(4-hydroxyphenyl)propanoyl]amino]-4-[1-bis(4-chlorophenoxy)phosphorylbutylamino]-4-oxobutanoic acid Chemical compound CCCC(NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](Cc1ccc(O)cc1)NC(=O)[C@@H](NC(=O)CCCCC1SC[C@@H]2NC(=O)N[C@H]12)C(C)C)P(=O)(Oc1ccc(Cl)cc1)Oc1ccc(Cl)cc1 QFLWZFQWSBQYPS-AWRAUJHKSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- ZWPVWTIRZYDPKW-UHFFFAOYSA-N chromium(VI) oxide peroxide Inorganic materials [O-2].[O-][Cr]([O-])(=O)=O ZWPVWTIRZYDPKW-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
［発明の目的］ ２
（産業上の利用分野）
本発明は、少なくとも鉛とクロムとを含む酸化物に導電
層を形成してなる湿度感応素子に関するものである。具
体的な応用例の一つとして湿度センサーがおる。Detailed Description of the Invention 3. Detailed Description of the Invention [Object of the Invention] 2 (Industrial Field of Application) The present invention provides a humidity sensitive It is related to the element. One specific application example is a humidity sensor.
（従来の技術）
湿度の変化に応じて、抵抗値が変化するという現象を有
する物質があり、この現象を利用した各種無機材料から
なる湿度感応素子が知られている。(Prior Art) There are substances that have a phenomenon in which their resistance value changes in response to changes in humidity, and humidity-sensitive elements made of various inorganic materials that utilize this phenomenon are known.
本出願人は先に誘電体材料としてｌＰｂとクロムＣｒと
を含む酸化物を用いて構成した光電変換装置を特願昭５
３−２０５８３＠ （特公昭５５−３５８７４丹）とし
て出願した。ところでこの出願の光電変換装置は光を誘
電体材料に照射することによって光起電力が発生する光
電変換効果を利用したものであるが、本願発明者らが種
々実験を行ったところ、湿度とその変化に対応して抵抗
値が変化するという現象が生ずることを見い出した。し
かもその応答速度は極めて速いことが判った。The applicant previously filed a patent application for a photoelectric conversion device constructed using an oxide containing lPb and chromium Cr as a dielectric material.
3-20583@ (Special Publication No. 55-35874 Tan). By the way, the photoelectric conversion device of this application utilizes the photoelectric conversion effect in which photovoltaic force is generated by irradiating light onto a dielectric material, but the inventors of this application conducted various experiments and found that humidity and its It was discovered that a phenomenon occurs in which the resistance value changes in response to the change. Moreover, the response speed was found to be extremely fast.
（発明が解決しようとする問題点）
従来はこの種のもので湿度応答速度が速く、さらに変化
に対する直線性の良好なものは得られていない。(Problems to be Solved by the Invention) Conventionally, this type of device has not been able to provide a fast humidity response speed and good linearity against changes.
本発明は前記のような現象に着目して成されたものであ
りこれを利用して湿度応答速度が速く、湿度変化に対す
る直線性が良好な湿度感応素子を得ることを目的とする
ものである。The present invention was made by focusing on the above-mentioned phenomenon, and an object of the present invention is to utilize this to obtain a humidity-sensitive element that has a fast humidity response speed and good linearity with respect to changes in humidity. .
［発明の構成］
（問題点を解決するための手段）
上記目的を達成するために本発明は、少なくとも鎗とク
ロムとを含む酸化物に導Ｎ層を形成して成ることを特徴
とするものである。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention is characterized in that an N-conducting layer is formed on an oxide containing at least a spear and chromium. It is.
（作 用）
例えばガラス基板上に鉛とクロムとを含む酸化物を導Ｎ
ｍを介して形成し、対電極とする導電層から出力を得る
ように構成することによって湿度感応素子を実用するこ
とができる。湿度を有する大気に接するように鉛とクロ
ムを含む酸化物を構成し、この大気中の湿度を任意に変
化させて、これに対応した抵抗値の変化に基づく電流値
を得ることにより湿度応答速度の速い湿度感応素子を得
ることができる。(Function) For example, by introducing an oxide containing lead and chromium onto a glass substrate.
The humidity sensitive element can be put to practical use by forming the humidity sensing element through the conductive layer and configuring it to obtain an output from a conductive layer serving as a counter electrode. The humidity response speed can be improved by configuring an oxide containing lead and chromium so that it is in contact with a humid atmosphere, and by arbitrarily changing the humidity in the atmosphere and obtaining a current value based on the corresponding change in resistance value. A fast humidity sensing element can be obtained.
（実施例）
第１図は本発明実施例の湿度感応素子を示すもので同図
（ａ）は平面図、同図（ｂ）はそのＡ−Ａ’線断面図で
ある。ガラス基板１例えばパイレックスガラス上に金を
蒸着し、その後、電子描画法によってすだれ状電極２と
４を形成する（電極幅４ｍｍ、ｉ極指間隙２μｍ、電極
対数５０＞。(Embodiment) FIG. 1 shows a humidity sensing element according to an embodiment of the present invention, in which FIG. 1(a) is a plan view and FIG. 1(b) is a sectional view taken along the line AA'. Gold is deposited on a glass substrate 1, for example, Pyrex glass, and then interdigital electrodes 2 and 4 are formed by electron lithography (electrode width: 4 mm, i-pole gap: 2 μm, number of electrode pairs: 50).
これらガラス基板１及び電極２，４の一部を覆うように
例えばＰｂ２ＣｒＯ５酸化物３を形成する。For example, Pb2CrO5 oxide 3 is formed so as to partially cover the glass substrate 1 and the electrodes 2, 4.
これによってＰｂ２Ｃｒｙｓ 酸化物３が対電極２と４
との間に配置された構造の湿度感応素子を得ることがで
きる。This causes the Pb2Crys oxide 3 to spread between the counter electrodes 2 and 4.
It is possible to obtain a humidity sensitive element having a structure arranged between.
上記Ｐｂｚ Ｃｒｙｓ 酸化物３は次のような方法によ
って形成される。The Pbz Crys oxide 3 is formed by the following method.
出発原料として酸化鉛ＰｂＯ及び酸化クロムＣｒ２Ｏ３
を用いＰｂｚＣｒＯｓの組成比となる如く秤量した。こ
の原料をポリエチレン製ポットで１０〜１５時間湿式混
合し、乾燥後４００〜５００℃にて２時間にわたって仮
焼成を行った。Lead oxide PbO and chromium oxide Cr2O3 as starting materials
The composition ratio of PbzCrOs was determined using PbzCrOs. These raw materials were wet mixed in a polyethylene pot for 10 to 15 hours, dried, and then pre-calcined at 400 to 500°C for 2 hours.
仮焼成後ボールミルにて１０〜１５時間粉砕を行い粒径
約１μｍ程度とした。この仮焼成粉末にバインダーを加
え、１ ｔｏｎｌｏｙｆで加圧成形した。更に成形体を
６５０〜９００℃にて２時間焼成し焼結体を得た。After pre-calcination, the powder was pulverized in a ball mill for 10 to 15 hours to obtain a particle size of about 1 μm. A binder was added to this pre-sintered powder, and the powder was press-molded at 1 tonloyf. Furthermore, the molded body was fired at 650 to 900°C for 2 hours to obtain a sintered body.
次にこのＰｂ２ＣｒＯ５からなる焼結体をターゲラ１〜
（Ｍ発源）として用い、次のように電子ビーム蒸着法に
よってガラス基板上にＰｂ２Ｃｒ。Next, the sintered body made of Pb2CrO5 was
(M source), Pb2Cr was deposited on a glass substrate by electron beam evaporation method as follows.
５酸化物の薄膜を形成した。A thin film of pentoxide was formed.
すなわら電子ビーム蒸着装置の真空容器内に上記Ｐｂ２
ＣｒＯ５焼結体を円板状となしたターゲットと電極２を
設けたガラス基板１とを配置し、ガラス基板１を２００
’Ｃ，電子銃加速電圧を５ ＫＶ。In other words, the Pb2 is
A target made of a disk-shaped CrO5 sintered body and a glass substrate 1 provided with an electrode 2 are arranged, and the glass substrate 1 is
'C, electron gun acceleration voltage 5 KV.
最大エミッション電流を１００ｍＡ、容器内の真空度を
４ Ｘ １０−５Ｔｏｒｒに保った状態で蒸着を行った
。Vapor deposition was performed while maintaining the maximum emission current at 100 mA and the vacuum level in the container at 4 x 10-5 Torr.
蒸着時間を約１〜２時間に設定することにより、ガラス
基板１上に約１．１５μｍのＰｂ２ＣｒＯ５酸化物３を
形成した。次のようにして得られたガラス基板１をＰｂ
を含んだ雰囲気内で、４７５℃で１．５時間熱処理を行
った。熱処理後のＰｂ２ＣｒＯ５酸化物３はオレンジ色
を呈する薄膜となった。By setting the evaporation time to about 1 to 2 hours, a Pb2CrO5 oxide 3 of about 1.15 μm was formed on the glass substrate 1. The glass substrate 1 obtained in the following manner was
Heat treatment was performed at 475° C. for 1.5 hours in an atmosphere containing. After the heat treatment, the Pb2CrO5 oxide 3 became an orange-colored thin film.
これによってＡｕ／Ｐｂ２Ｃｒｙｓ 簿膜／Ａｕ同一平
面内対電極構造を有する湿度感応素子が得られる。This results in a humidity sensitive element having an Au/Pb2Crys film/Au coplanar counter electrode structure.
次に本発明実施例の作用を説明する。Next, the operation of the embodiment of the present invention will be explained.
得られた湿度感応素子を第２図のような測定回路を用い
て電流の測定を行った。すなわちすだれ状電極２の一方
にバイアス電圧Ｖ［３を加えた状態で、湿度を有する空
気に接触させ、この空気中の湿度を変化させることによ
り、一方のすだれ状電極４からの出力電流をオペアンプ
５を用いたｒ−■変換回路によって測定することにより
微小電流の測定が可能となる。このようにして得られた
湿度応答特性を第３図に示す。縦軸は電流、横軸は湿度
を示している。バイアス電圧ＶＢを０．２Ｖ加えた状態
で、温度を２０．４０及び８０’Ｃの各温度で空気中の
湿度を換えて電流値の変化を求めると、湿度と電流値の
良好な直線性を示すような特性が得られる。この特性は
従来に比べかなり速い湿度感応性と良好な直線性を示し
ている。The current of the obtained humidity sensitive element was measured using a measuring circuit as shown in FIG. That is, by applying a bias voltage V[3 to one side of the interdigital electrode 2 and bringing it into contact with humid air, and changing the humidity in the air, the output current from one interdigital electrode 4 is changed to an operational amplifier. By measuring with an r-■ conversion circuit using 5, it becomes possible to measure minute currents. The humidity response characteristics thus obtained are shown in FIG. The vertical axis shows current and the horizontal axis shows humidity. When we change the humidity in the air and find the change in current value at each temperature of 20.40 and 80'C with a bias voltage VB of 0.2V applied, we find that there is good linearity between humidity and current value. The characteristics shown are obtained. This characteristic shows considerably faster humidity sensitivity and better linearity than conventional ones.
実施例中ではＰｂ２ＣｒｙｓＷｅ化物の形成手段として
は電子ビーム蒸着法について述べたが、これに限らず他
にもスパッタリング法、イオンビーム蒸着法等のその他
の真空中における薄膜形成手段を用いることができ、こ
れによっても同様な作用、効果を得ることができる。In the examples, the electron beam evaporation method was described as the means for forming the Pb2CrysWe compound, but the method is not limited to this, and other thin film forming means in vacuum such as sputtering method and ion beam evaporation method can be used. Similar actions and effects can also be obtained by this method.
尚、Ｐｂ２ＣｒＯ５酸化物の形成後の熱処理温度として
は実施例中で示した値以下の条件では所望のＰｂ２Ｃｒ
Ｏ５薄膜の形成は困難なので、その値以上での熱処理が
望ましい。またＰｂｚＣｒＯ５酸化物形成時酸化物形成
板温度が１００〜３５０℃の範囲であれば基板温度によ
る他に対する影響はないことが、ＰｂｚＣｒＯｓ薄膜の
Ｘ線回折パターンから確かめられたので、上記範囲内で
所望値を設定することができる。Note that if the heat treatment temperature after forming the Pb2CrO5 oxide is below the value shown in the example, the desired Pb2Cr
Since it is difficult to form an O5 thin film, heat treatment at a temperature higher than this value is desirable. Furthermore, it has been confirmed from the X-ray diffraction pattern of the PbzCrOs thin film that if the oxide forming plate temperature during PbzCrO5 oxide formation is in the range of 100 to 350°C, there is no effect on other things due to the substrate temperature. Value can be set.
第４図は本発明の他の実施例を示すもので、例えばＰｂ
２ＣｒＯ５Ｍ化物１１の表面に、すだれ状の導電層から
なる対向電極’１２．１３が設けられた構造を有してい
る。上記Ｐｂ２Ｃｒｙｓ Ｑ！化物１１は次のような方
法によって形成される。FIG. 4 shows another embodiment of the present invention, for example, Pb
It has a structure in which counter electrodes 12 and 13 made of interdigital conductive layers are provided on the surface of the 2CrO5M compound 11. The above Pb2Crys Q! The compound 11 is formed by the following method.
出発材料として酸化鉛ＰｂＯ及び層化クロムＣｒ２Ｏ３
を用いＰｂ２ＣｒＯ５の組成比となる如く種母した。こ
の原料をポリエチレン製ボッ１〜で１０〜１５時間湿式
混合し、乾燥後４００〜５００℃にて２時間にわたって
仮焼成を行った。Lead oxide PbO and layered chromium Cr2O3 as starting materials
A seed mother was prepared so as to have a composition ratio of Pb2CrO5. These raw materials were wet mixed for 10 to 15 hours in a polyethylene bowl, dried, and then pre-calcined at 400 to 500°C for 2 hours.
仮焼成後ボールミルにて１０〜１５時間粉砕を行い粒径
約１μ程度とした。After pre-calcination, the powder was pulverized in a ball mill for 10 to 15 hours to obtain a particle size of about 1 μm.
この仮焼成粉末にバインダーを加え、１ｔＯｎｌｃ肩で
加圧形成した。更に成形体を６５０〜９００ ’Ｃにて
２時間焼成し焼結体を１９だ。A binder was added to this pre-fired powder, and it was formed under pressure using a 1tOnlc shoulder. Further, the molded body was fired at 650 to 900'C for 2 hours to obtain a sintered body.
このＰｂ２ＣｒＯ５焼結体表面にすだれ状電極パターン
を用いてアルミニウム膜を真空蒸着により被着して第４
図のような湿度感応素子を形成した。An aluminum film was deposited on the surface of this Pb2CrO5 sintered body by vacuum evaporation using an interdigital electrode pattern.
A humidity sensitive element as shown in the figure was formed.
同様にＰｂｓ ＣｒＯ３，ＰｂＣｒＯ４となる如き組成
比の酸化物の焼結体を形成し、各々電極を設けることに
よって湿度感応素子を形成した。Similarly, sintered bodies of oxides having composition ratios such as Pbs CrO3 and PbCrO4 were formed, and electrodes were provided for each to form a humidity sensitive element.
またＰｂＯとＣｒ’２０３の比率を順次変化させて配合
し、前記実施例と同様な方法で湿度感応素子を形成した
。その結果Ｃｒ２ｏ３が７Ｑｍｏｌ％以上となると湿度
感応効果は生じなくなった。またＰｂＯが９９．５ｍｏ
ｌ％以上となった場合も湿度感応効果はほとんど生じな
くなった。Further, the ratio of PbO and Cr'203 was sequentially changed and blended, and a humidity sensitive element was formed in the same manner as in the above example. As a result, when Cr2o3 was 7Qmol% or more, the humidity-sensitive effect no longer occurred. Also, PbO is 99.5mo
Even when the concentration exceeded 1%, almost no humidity-sensitive effect occurred.
各実施例におけるＰｂとＣｒとの組成比は一例を挙げて
説明したが特定比の酸化物に限定されず、ＰｂとＣｒと
を含む酸化物ならすべてに適用することができる。Although the composition ratio of Pb and Cr in each embodiment has been explained by giving an example, it is not limited to an oxide having a specific ratio, and can be applied to any oxide containing Pb and Cr.
特に焼結体表面にすだれ状電極を形成してなる湿度感応
素子は、極めて容易に高感度の湿度感応素子を得るのに
有効な手法である。In particular, a humidity sensing element formed by forming interdigital electrodes on the surface of a sintered body is an effective method for obtaining a highly sensitive humidity sensing element very easily.
［発明の効果］
以上述べて明らかなように本発明ににれば、ＰｂとＣｒ
とを含む酸化物を用いて応答速度が速く、しかも直線性
の良好な湿度感応素子を実現することかできるので、広
範囲の用途例えば湿度センサーなどへの適用が可能とな
る。[Effect of the invention] As is clear from the above description, according to the present invention, Pb and Cr
Since it is possible to realize a humidity sensing element with a fast response speed and good linearity using an oxide containing the above, it becomes possible to apply it to a wide range of applications, such as humidity sensors.
第１図（ａ）、（ｂ）は本発明実施例の湿度感応素子を
示す平面図、Ａ−Ａ’線断面図、第２図は本発明湿度感
応素子の電流測定回路、第３図は本発明湿度感応素子の
応答波形図、第４図（ａ）。
（ｂ）は本発明湿度感応素子の他の実施例を示す平面図
、Ｂ−Ｂ’線断面図である。
１・・・ガラス基板、
２．４，１２．１３・・・電極、
３．１１・・・酸化物、 ′
３ Ｐｌ：）ｚＣＹＯｓ６引ビ物
２／電＆ ｌ ａ
’う又本成（ｂ）
第２図
（Ｑ）
１１ ｐ６．ｃｒｏ←酸柁すり
（ｂ）
第４図1(a) and 1(b) are plan views and sectional views taken along the line A-A' of the humidity sensing element according to the embodiment of the present invention, FIG. 2 is a current measurement circuit of the humidity sensing element of the present invention, and FIG. 3 is a FIG. 4(a) is a response waveform diagram of the humidity sensing element of the present invention. (b) is a plan view and a sectional view taken along the line BB', showing another embodiment of the humidity sensing element of the present invention. 1...Glass substrate, 2.4,12.13...Electrode, 3.11...Oxide, '3 Pl:)zCYOs6 Vibrant 2/electrode & la
'Umatamoto Sei (b) Figure 2 (Q) 11 p6. cro←Acid pickpocket (b) Figure 4
Claims (7)
形成してなることを特徴とする湿度感応素子。(1) A humidity sensitive element comprising a conductive layer formed on an oxide containing at least lead and chromium.
特許請求の範囲第１項記載の湿度感応素子。(2) The humidity sensing element according to claim 1, wherein the oxide is a plate-shaped sintered porcelain.
請求の範囲第１項記載の湿度感応素子。(3) The humidity sensitive element according to claim 1, wherein the oxide is a thin film formed in vacuum.
５ｍｏｌ％、Ｃｒ＿２Ｏ＿３に換算して０．５〜７０ｍ
ｏｌ％の組成比を有する特許請求の範囲第１項記載の湿
度感応素子。(4) The lead and chromium are 30 to 99% in terms of PbO.
5 mol%, 0.5 to 70 m in terms of Cr_2O_3
The humidity sensitive element according to claim 1, which has a composition ratio of 0.01%.
Ｏ＿５、ＰｂＣｒＯ＿４の少なくとも一種を含有する特
許請求の範囲第１項記載の湿度感応素子。(5) The oxide is Pb_5CrO_3, Pb_2Cr
The humidity sensitive element according to claim 1, which contains at least one of O_5 and PbCrO_4.
許請求の範囲第１項記載の湿度感応素子。(6) The humidity sensitive element according to claim 1, wherein the oxide is arranged between two conductive layers.
許請求の範囲第６項記載の湿度感応素子。(7) The humidity sensing element according to claim 6, wherein the conductive layer has a cross-section electrode structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61122817A JPH0734004B2 (en) | 1986-05-28 | 1986-05-28 | Humidity sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61122817A JPH0734004B2 (en) | 1986-05-28 | 1986-05-28 | Humidity sensitive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62278441A true JPS62278441A (en) | 1987-12-03 |
| JPH0734004B2 JPH0734004B2 (en) | 1995-04-12 |
Family
ID=14845370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61122817A Expired - Lifetime JPH0734004B2 (en) | 1986-05-28 | 1986-05-28 | Humidity sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0734004B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5027989A (en) * | 1973-07-13 | 1975-03-22 | ||
| JPS5194599A (en) * | 1975-02-17 | 1976-08-19 | ENAMERUKANSHITSUTEIKOTAISOSEIBUTSU | |
| JPS57208103A (en) * | 1981-06-18 | 1982-12-21 | Omron Tateisi Electronics Co | Moisture sensitive element |
| JPS6232601A (en) * | 1985-08-05 | 1987-02-12 | 金子 文隆 | Moisture sensor element |
-
1986
- 1986-05-28 JP JP61122817A patent/JPH0734004B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5027989A (en) * | 1973-07-13 | 1975-03-22 | ||
| JPS5194599A (en) * | 1975-02-17 | 1976-08-19 | ENAMERUKANSHITSUTEIKOTAISOSEIBUTSU | |
| JPS57208103A (en) * | 1981-06-18 | 1982-12-21 | Omron Tateisi Electronics Co | Moisture sensitive element |
| JPS6232601A (en) * | 1985-08-05 | 1987-02-12 | 金子 文隆 | Moisture sensor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0734004B2 (en) | 1995-04-12 |
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