JPS62251725A - Liquid-crystal display device - Google Patents
Liquid-crystal display deviceInfo
- Publication number
- JPS62251725A JPS62251725A JP61096311A JP9631186A JPS62251725A JP S62251725 A JPS62251725 A JP S62251725A JP 61096311 A JP61096311 A JP 61096311A JP 9631186 A JP9631186 A JP 9631186A JP S62251725 A JPS62251725 A JP S62251725A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- display device
- crystal display
- liquid crystal
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000001259 photo etching Methods 0.000 abstract description 10
- 239000011159 matrix material Substances 0.000 abstract description 6
- 230000002950 deficient Effects 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 230000007547 defect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000017260 vegetative to reproductive phase transition of meristem Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、計算機の表示パネル、自動車のインストルメ
ントパネル、パーソナルコンピューター画像表示装置、
テレビなどに使用される多数の画素を仔する液晶表示装
置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is applicable to computer display panels, automobile instrument panels, personal computer image display devices,
The present invention relates to a liquid crystal display device with a large number of pixels used in televisions and the like.
本発明は、多数の行列電極を有し、シリコンを主成分と
するアモルファス材料からなる非線形１圧抗素子を用い
たマトリクス構造液晶表示装置において、画素電極を構
成する透明導電＋１２を、行電極もしくは列電極と重な
る部分にも形成する事により、１ｊＩｉ線による欠陥を
なくし、不良率を少なくしたものである。The present invention provides a matrix structure liquid crystal display device that has a large number of row and column electrodes and uses a nonlinear one-pressure resistance element made of an amorphous material mainly composed of silicon. By forming it also in the portion overlapping with the column electrode, defects caused by the 1jIi line are eliminated and the defective rate is reduced.
従来の非線形抵抗素子を用いた液晶表示装置の縦断面図
を第２図に示す。１．２はそれぞれ上下透明ノ、−仮、
３は液晶層、４は上基板の表示用透明１掘で、５は画素
電極となる透１リド、ラミ膜で、６は非線形抵抗素子、
７は金属電極であり、行列１掘の一方の電極である。こ
のような非線形抵抗素子を各液晶画素と直列に設けた２
端子アクティブマトリクス液晶表示装置は、形成ｎり数
及びフォトエツチング工程が少なく、パターニング精度
が比較的粗い為、低いコスト、大面積表示装置への応用
が可能である。FIG. 2 shows a vertical cross-sectional view of a liquid crystal display device using a conventional nonlinear resistance element. 1.2 are upper and lower transparent, -temporary,
3 is a liquid crystal layer, 4 is a transparent 1-hole for display on the upper substrate, 5 is a transparent 1-lid laminate film that becomes a pixel electrode, 6 is a non-linear resistance element,
7 is a metal electrode, which is one electrode of one matrix. 2, in which such a nonlinear resistance element is provided in series with each liquid crystal pixel.
The terminal active matrix liquid crystal display device has a small number of formation steps, a small number of photo-etching steps, and a relatively rough patterning precision, so that it can be applied to low-cost, large-area display devices.
しかし、従来のシリコンを主成分とするアモルファス（
オｔ［からなる非線形１氏抗素子を用いた７トリクス構
造液晶表示装置は、行列電翫数が増加するにしたがい、
金属電極のライン巾が細まり、また大面積になるにした
がい金属電極のライン長が長くなる為、ゴミ等による断
線が発４しシやすくなり、不良・１が極度に高まる０例
えば行列電橋数を倍にすれば、金属電極のライン中はｌ
’分にする必要があり、また開花率をとげ表示品質を高
める為には、金属電極のライン中はできるだけ小さくし
た方が望ましい。−万人面積表示を行う場合は、金属電
極のライン長さは艮くなり、ゴミによる不良率が高まる
だけでムく、ライン抵抗が大きくなり表示品質が低下す
る。However, conventional amorphous (based on silicon)
In a 7-trix structure liquid crystal display device using a nonlinear 1 degree resistor element consisting of Ot[, as the number of matrix wires increases,
As the line width of the metal electrode becomes narrower and the area becomes larger, the line length of the metal electrode becomes longer, making it easier for wire breaks due to dust etc., resulting in an extremely high number of defects. If you double the number, there will be l in the metal electrode line.
In addition, in order to reduce the flowering rate and improve display quality, it is desirable to make the metal electrode line as small as possible. - When displaying a 100,000-person area, the line length of the metal electrode becomes long, which only increases the defective rate due to dust, increases the line resistance, and deteriorates the display quality.
そこで本発明は、従来のこのような欠点を解決する為に
、表示品質を悪化させる事なく、不良率を低減する事を
目的としている。Therefore, in order to solve these conventional drawbacks, the present invention aims to reduce the defective rate without deteriorating the display quality.
上記問題点を解決するために、本発明は、画素電極形成
時に、画素電極と接触しないように、金属電極と重なる
部分に、画素電極と同じ材料の透明導電膜を形成し、例
え金属電極が断線している場合でも透明導電膜を通して
電流が流れるようにしたもので、金属電極の補助的な割
合をもたす事により不良率を下げ、電橋抵抗を下げるよ
うにしたものである。In order to solve the above problems, the present invention forms a transparent conductive film made of the same material as the pixel electrode on the part that overlaps with the metal electrode so as not to contact the pixel electrode when forming the pixel electrode. This allows current to flow through the transparent conductive film even when the wire is broken, and by providing an auxiliary proportion of metal electrodes, the defect rate is lowered and the bridge resistance is lowered.
上記のように構成された非線形抵抗素子を用いたマトリ
クス構造液晶表示装置は、外部回路より金属電極に、直
接あるいは透明導電膜を通して電圧が印加され、金属電
極が断線している部分では、電流が金属電極、透明導電
膜、金属電極の経路を通って流れ、各画素に電圧が印加
される。In a matrix structure liquid crystal display device using a nonlinear resistance element configured as described above, a voltage is applied from an external circuit to the metal electrodes directly or through a transparent conductive film, and a current is applied to the parts where the metal electrodes are disconnected. The voltage flows through the path of the metal electrode, the transparent conductive film, and the metal electrode, and a voltage is applied to each pixel.
以下に、この発明の実施例を図面に岱づいて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明による液晶表示装置の縦断面構造の一画
素について明示した図であり、偏光板は省略した。第１
図において、１１は基板で透明ガラスであり、通常のガ
ラスを使用、１２．１３は透明導電膜であり、インジウ
ムスズ酸化膜等をマグネトロンスパッタ等によって堆積
した後、フォトエンチングによってパターンを形成した
。１２は画素電極で、１３は補助電極である。 １４は
シリコンを主体としたアモルファス材料で、プラズマＣ
ＶＤ法によって堆積した後、フォトエツチングによりパ
ターンを形成した非線形抵抗素子である。１５は金属電
極で、行列電極の一方の電極であり、クロム。FIG. 1 is a diagram clearly showing one pixel of the vertical cross-sectional structure of a liquid crystal display device according to the present invention, and a polarizing plate is omitted. 1st
In the figure, 11 is a substrate made of transparent glass, which is made of ordinary glass, and 12.13 is a transparent conductive film, in which an indium tin oxide film or the like is deposited by magnetron sputtering, and then a pattern is formed by photo-etching. . 12 is a pixel electrode, and 13 is an auxiliary electrode. 14 is an amorphous material mainly composed of silicon, and plasma C
This is a nonlinear resistance element in which a pattern is formed by photoetching after depositing by the VD method. 15 is a metal electrode, which is one of the row and column electrodes, and is made of chromium.
？ ルミ、 ＄ｒＬ ニクロム、タンタル等をスパッ
ター法等によって堆積した後、フォトエツチングによっ
て、少なくとも一部分で補助′４極１３と接触するよう
にｉｆ１沢的に形成した。１６は一般に用いられている
液晶層で、透明導電膜１７を選択的に形成した上側透明
基板１８と、基板１１の間に挟持されている。? After depositing lumi, $rL nichrome, tantalum, etc. by a sputtering method or the like, it was formed in a large amount by photoetching so that at least a portion of the layer was in contact with the auxiliary '4 pole 13. Reference numeral 16 denotes a generally used liquid crystal layer, which is sandwiched between the substrate 11 and an upper transparent substrate 18 on which a transparent conductive film 17 is selectively formed.
この為、行あるいは列電極である金属電極１５が一部で
断線しても、補助電極１３によって電流が流れ不良にな
らない。また大画面表示を行う場合でも金属電極１５と
補助電極１３が並列になっていて、電気抵抗をかせげる
為、金属電極１５のライン巾を大きくする必要がなく開
花率の高い、＠質の良い液晶表示装置を提供できる。Therefore, even if the metal electrodes 15, which are row or column electrodes, are partially disconnected, current will flow through the auxiliary electrodes 13 and no defects will occur. In addition, even when displaying on a large screen, the metal electrode 15 and the auxiliary electrode 13 are in parallel to increase electrical resistance, so there is no need to increase the line width of the metal electrode 15, resulting in a high flowering rate and a high quality liquid crystal display. Display devices can be provided.
第３図は本発明の第２実施例による液晶表示装置の縦断
面図であり、一画素について明示した。FIG. 3 is a vertical cross-sectional view of a liquid crystal display device according to a second embodiment of the present invention, in which one pixel is clearly shown.
液晶、上側透明基板、偏光板等は、第１実施例と同じな
ので省略した。The liquid crystal, upper transparent substrate, polarizing plate, etc. are the same as in the first embodiment, so they are omitted.
第３図において、基板１１．画素電極１２．補助電極１
３は、第１実施例と同様に形成する。その後、非線形抵
抗素子１４．金属電極１５を連続して堆積し、次にフォ
トエツチングによって金属電極１５を選択的に除去し、
感光性樹脂を除去する事なく、シリコンを主な成分とす
るアモルファス材料１４を選択的に除去した。この結果
、非線形抵抗素子を形成した基板は、２回フォ］・マス
クを使用し、３回のエツチング工程によって作成した。In FIG. 3, the substrate 11. Pixel electrode 12. Auxiliary electrode 1
3 is formed in the same manner as in the first embodiment. After that, the nonlinear resistance element 14. successively depositing metal electrodes 15 and then selectively removing metal electrodes 15 by photoetching;
The amorphous material 14 containing silicon as a main component was selectively removed without removing the photosensitive resin. As a result, the substrate on which the nonlinear resistance element was formed was fabricated by performing three etching steps using a two-step photomask.
この場合、金属電極１５と補助電極１３の間には、アモ
ルファス材料１４が存在するが、その非線形抵抗性によ
り、金属電極１５が断線した場合でも電流が流れ不良と
ならない。In this case, the amorphous material 14 exists between the metal electrode 15 and the auxiliary electrode 13, but due to its nonlinear resistance, even if the metal electrode 15 is disconnected, current will not flow and a defect will not occur.
第４図は、本発明の第３実施例による液晶表示装置の縦
断面図であり、一画素について明示した。FIG. 4 is a vertical cross-sectional view of a liquid crystal display device according to a third embodiment of the present invention, in which one pixel is clearly shown.
液晶、上側透明基板、偏光板等は、第１実施例と同じな
ので省略した。The liquid crystal, upper transparent substrate, polarizing plate, etc. are the same as in the first embodiment, so they are omitted.
第４図において、金属電極１５は、基板ｌＩ上に、堆積
した後、フォトエツチングによりパターンを形成する。In FIG. 4, the metal electrode 15 is deposited on the substrate II and then patterned by photo-etching.
その後、ノリコンを主な成分とするアモルファス材料１
４を堆積、フォトエツチングにより選択的に形成する。After that, amorphous material 1 whose main component is Noricon
4 is selectively formed by deposition and photoetching.
その後、透明導電膜である（１１１助電極１３１画素電
極１２を、堆積、フォトエツチングにより選択的に形成
する。補助ＴＬｈ１３は、第１実施例と同様、部分的に
金属電極１５と接続している。Thereafter, a transparent conductive film (111, auxiliary electrode 131, and pixel electrode 12) is selectively formed by deposition and photoetching.As in the first embodiment, the auxiliary TLh13 is partially connected to the metal electrode 15. .
本発明は以上説明したように、ノリコンを主成分とする
アモルファス材車−１によって構成された非線形素子を
有する液晶表示装置の不良Ｃを低減さける１１１に、１
、す、歩留りを」二げ低コス１−化を実現」−る効果が
ある。また、開花率を高める事により表示画質を向」−
させる効果がある。As explained above, the present invention has the following advantages: 111.
This has the effect of lowering yield and achieving lower cost. In addition, by increasing the flowering rate, the display image quality is improved.
It has the effect of
第１図は、本発明による液晶表示装置の第１実施例を示
す縦断面図。
第２図は、従来の液晶表示装置の縦断面図。
第３図は、本発明による液晶表示装置の第２実施例を示
す縦断面図。
第４図は、本発明による液晶表示装置の第３実施例を示
す縦断面図である。
１、、 ２． １１． １８ ・ ・ ・
Ｍ 牟反３．１６・・・・・・・液晶
４．１７・・・・・・・透明電極
５．１２・・・・・・・画素電橋
６．１４・・・・・・・アモルファス材料７．１５・・
・・・・・金属電極
１３・・・・・・・・・補助電極
以上
出願人 セーイコー電子工業株式会社
窮３図 第４皿FIG. 1 is a longitudinal sectional view showing a first embodiment of a liquid crystal display device according to the present invention. FIG. 2 is a vertical cross-sectional view of a conventional liquid crystal display device. FIG. 3 is a longitudinal sectional view showing a second embodiment of the liquid crystal display device according to the present invention. FIG. 4 is a longitudinal sectional view showing a third embodiment of a liquid crystal display device according to the present invention. 1,, 2. 11. 18 ・ ・ ・
M Mutan 3.16...Liquid crystal 4.17...Transparent electrode 5.12...Pixel electric bridge 6.14...Amorphous Material 7.15...
...Metal electrode 13...Auxiliary electrode and above Applicant: Seiko Electronics Co., Ltd. 4th plate
Claims (2)
晶層と、一方の基板の内面に形成した多数の行電極群と
、他方の基板の内面に形成した多数の列電極群とからな
り、また少なくとも一方の基板の各画素は、それぞれ画
素電極と非線形抵抗素子からなり、前記画素電極と非線
形抵抗素子が直列に接続された液晶表示装置において、
前記非線形抵抗素子は、行または列電極からなる第１の
導体、および画素電極からなる第２の導体間に形成した
シリコンを主な成分とするアモルファス材料からなり、
前記行または列電極は、前記第１の導体と補助電極の２
面構造をなし、前記補助電極は、前記第２の導体と同じ
材料からなる事を特徴とする液晶表示装置。(1) Two opposing substrates, a liquid crystal layer sandwiched between the substrates, a large number of row electrode groups formed on the inner surface of one substrate, and a large number of column electrode groups formed on the inner surface of the other substrate. In a liquid crystal display device in which each pixel of at least one substrate includes a pixel electrode and a nonlinear resistance element, and the pixel electrode and the nonlinear resistance element are connected in series,
The nonlinear resistance element is made of an amorphous material mainly composed of silicon formed between a first conductor consisting of a row or column electrode and a second conductor consisting of a pixel electrode,
The row or column electrode includes two of the first conductor and the auxiliary electrode.
A liquid crystal display device having a planar structure, wherein the auxiliary electrode is made of the same material as the second conductor.
事を特徴とする特許請求の範囲第１項記載の液晶表示装
置。(2) The liquid crystal display device according to claim 1, wherein the auxiliary electrode and the second conductor are made of a transparent conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61096311A JPS62251725A (en) | 1986-04-25 | 1986-04-25 | Liquid-crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61096311A JPS62251725A (en) | 1986-04-25 | 1986-04-25 | Liquid-crystal display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62251725A true JPS62251725A (en) | 1987-11-02 |
Family
ID=14161477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61096311A Pending JPS62251725A (en) | 1986-04-25 | 1986-04-25 | Liquid-crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62251725A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61182B2 (en) * | 1980-11-18 | 1986-01-07 | Sekisui Plastics |
-
1986
- 1986-04-25 JP JP61096311A patent/JPS62251725A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61182B2 (en) * | 1980-11-18 | 1986-01-07 | Sekisui Plastics |
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