JPS6224916B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a microsocket used for high-density mounting of various substrates.

Josephson devices that operate at extremely low temperatures have attracted attention in recent years because of their extremely high switching speed and low power consumption compared to conventional silicon devices. In order to realize high-performance computers using Josephson devices, microsockets are used to mount various boards at high density.

Figure 1 shows an implementation example using a conventional microsocket (W.Anacker “Computing at 4 degrees
Kelvin” IEEE Spectrum, Vol.15, No.5,
1979). In the figure, 1 is a wiring board, 2 is a wiring formed on the wiring board 1, 3 is a micro pin planted on the wiring 2, 4 is a card board, 5 is a wiring formed on the card board 4, 6 is a card board IC chip mounted on 4, 7 is wiring 5
The micro pins 8 erected in are micro sockets, and the micro sockets 8 are made up of two silicon substrates 9 and 10. Reference numeral 11 denotes a cavity provided in the microsocket 8. The opening of the cavity 11 is narrow and widens inside. The mercury 12 is placed inside the cavity 11. Since the expressed tension of the mercury 12 is large, it does not curl up and spill out of the cavity 11. And micro pins 3 and 7
is inserted into the cavity 11, and the card board 4
The wiring 5 and the wiring 2 of the wiring board 1 are connected via micro pins 7, mercury 12, and micro pins 3.

In order to manufacture this microsocket 8, the silicon substrates 9 and 10 are etched using surface orientation selectivity (E.Barrous and EFBaran "The
Fabrication of High Precision Nozzles by the
Anisotropic Etching of (100) Silicon”J.
Electrochem.Soc, Vol. 125, No. 8, 1978), after forming a pyramid-shaped hole, mercury is injected from the wide opening of the hole in one silicon substrate, such as the silicon substrate 10, and then injected into the other silicon substrate. A silicon substrate 9 is bonded to a silicon substrate 10. However, since the holes are formed by surface orientation selective etching, a silicon substrate with a different surface orientation or a material other than a silicon substrate cannot be used, and the shape and size of the cavity 11 are fixed. Furthermore, since the silicon substrates 9 and 10 having the same crystal plane are bonded together, they are susceptible to stress along the cleavage and easily break. Further, when the silicon substrate 10 with mercury injected into the hole is covered with the silicon substrate 9, there is a possibility that mercury spills out of the hole. Furthermore, after making holes in the silicon substrates 9 and 10,
It is also possible to bond the silicon substrates 9 and 10 together and then fill the cavity 11 with mercury 12 from the opening, but in this case, the opening has a width of about 80μ on a side.
Since it is very small (m square), it cannot be filled easily.

This invention was made to solve the above-mentioned problems, and it is possible to use silicon substrates with different surface orientations and materials other than silicon substrates, and to freely select the size and shape of the cavity. It is an object of the present invention to provide a microsocket that can be easily inserted into a microsocket, which is hard to break, and into which a low-melting point metal can be easily inserted.

In order to achieve this objective, the present invention provides a first substrate having a first through hole formed thereon, and a first substrate thinner than the first substrate having second through holes smaller than the first through hole on both sides of the first substrate. A second substrate is bonded together so that the center line of the first through hole and the center line of the second through hole coincide, and the inside of the first through hole is filled with a low melting point metal.

FIG. 2 is a sectional view showing a microsocket according to the present invention. In the figure, 13 is a first silicon substrate, 14 is a first through hole provided perpendicularly to the silicon substrate 13, 15 and 16 are second silicon substrates, and the silicon substrates 15 and 16 are thinner than the silicon substrate 13. . 17 and 18 are silicon substrates 1
The through holes 17 and 18 are second through holes provided perpendicularly to the through holes 5 and 16, and have a size that allows the micro pins 3 and 7 to be inserted therein, and are smaller than the through hole 14.
Silicon substrates 15 and 16 are bonded to both sides of the silicon substrate 13, and the through hole 1
4 and the center lines of the through holes 17 and 18 coincide with each other. 19 is a cavity formed by the through holes 14, 17, and 18, and 20 is mercury placed inside the cavity 19.

To manufacture this microsocket, first, through holes 14, 17, 18 of desired size are formed in silicon substrates 13, 15, 16 by etching. Next, one of the second silicon substrates, for example, the silicon substrate 15, is bonded to one side of the silicon substrate 13. Next, mercury 20 is introduced into the through hole 14 through the wide opening of the silicon substrate 13. Next, a silicon substrate 16 is bonded to the other surface of the silicon substrate 13. In this way, mercury can be injected through a large opening, making it easy to insert mercury, and mercury will not flow out due to surface tension.

Although silicon substrates were used as the first and second substrates in the above embodiments, materials other than silicon substrates may be used. Further, in the above embodiment, the through holes 14 of the same size are provided in the silicon substrate 13, but the through holes of different sizes may be provided. Furthermore, in the above embodiment, the through holes 14, 17, and 18 were formed by etching, but electric discharge machining, electron beam machining, laser machining, ultrasonic machining, etc. may also be used. It is also conceivable to inject mercury 20 after bonding the silicon substrates 15 and 16 to both sides of the silicon substrate 13. Furthermore, in the above embodiments, mercury is used as the low melting point metal, but low melting point solder or the like may also be used.

As explained above, in the microsocket according to the present invention, the first and second through holes may be vertical holes, so there is no need to use surface orientation selective etching. Therefore, silicon substrates with different surface orientations or materials other than silicon substrates can be used as the first and second substrates, and the shape of the cavity,
The size can be freely selected, and three substrates with different crystal planes can be bonded together, so even if stress along the cleavage is applied,
Not easily damaged. In addition, it is easy to add low melting point metals,
In addition, when the low melting point metal is in a liquid or molten state, the low melting point metal does not flow out due to surface tension, so it is easy to manufacture, use, and store.
As described above, the effects of this invention are remarkable.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing an example of mounting using a conventional microsocket, and FIG. 2 is a sectional view showing a microsocket according to the present invention. 13...First silicon substrate, 14...First through hole, 15, 16... Second silicon substrate, 1
7, 18...Second through hole, 19...Cavity part, 2
0...Mercury.

Claims (1)

[Claims] 1 On both sides of the first substrate provided with the first through hole,
A second substrate thinner than the first substrate provided with a second through hole smaller than the first through hole is attached to the first substrate.
A microsocket characterized in that the first through hole is bonded together so that the center line of the through hole and the center line of the second through hole coincide with each other, and the inside of the first through hole is filled with a low melting point metal.