JPH02304883A - Narrow pitch connector - Google Patents
Narrow pitch connectorInfo
- Publication number
- JPH02304883A JPH02304883A JP1126471A JP12647189A JPH02304883A JP H02304883 A JPH02304883 A JP H02304883A JP 1126471 A JP1126471 A JP 1126471A JP 12647189 A JP12647189 A JP 12647189A JP H02304883 A JPH02304883 A JP H02304883A
- Authority
- JP
- Japan
- Prior art keywords
- grooves
- contacts
- contact
- housing
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 14
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 238000005192 partition Methods 0.000 claims description 4
- 239000011295 pitch Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 3
- 230000013011 mating Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0284—Details of three-dimensional rigid printed circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/117—Pads along the edge of rigid circuit boards, e.g. for pluggable connectors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/119—Details of rigid insulating substrates therefor, e.g. three-dimensional details
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
この発明はコンタクト間隔が狭い狭ピツチコネクタに関
する。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" This invention relates to a narrow pitch connector with narrow contact spacing.
「従来の技術]
従来のコネクタは合成樹脂材のボディに、金属板で作ら
れたコンタクトが組み込まれて構成されていた。そのボ
ディはモールドで作られ、コンタクトはプレスで作られ
ていた。"Conventional Technology" Conventional connectors have a body made of synthetic resin with contacts made of metal plates built into them.The body is made by molding, and the contacts are made by pressing.
「発明が解決しようとする課題」
以上述べたように従来のコネクタはボディとコンタクト
とを別々に作り、これらを組み立てる構造であるため、
コンタクトを固定するための機構が必要となり、構造が
複雑となっていた。またボディをモールドで作り、コン
タクトをプレスで作っているため、コンタクトの狭ピッ
チ化が難しかった。"Problems to be Solved by the Invention" As mentioned above, conventional connectors have a structure in which the body and contacts are made separately and assembled together.
A mechanism for fixing the contacts was required, making the structure complicated. Also, because the body was made with a mold and the contacts were made with a press, it was difficult to narrow the pitch of the contacts.
この発明の目的は構造が簡単でコンタクトを狭ピンチ化
することが容易な狭ピツチコネクタを提供することにあ
る。An object of the present invention is to provide a narrow-pitch connector that has a simple structure and allows contacts to be easily pinched.
「課題を解決するための手段」
この発明によれば絶縁性結晶性基板の少なくとも一面に
、一端が前方端面に達する複数の溝が平行に形成され、
これら溝はその深さ方向よりも側面方向のエツチング速
度が遅いものであり、これら溝の少なくとも底面または
隣接溝間の隔壁の上面に導電性材料層のコンタクトがそ
れぞれ形成され、これらコンタクトが形成された絶縁性
結晶性基板が、その前方端面側を開口面側としてハウジ
ング内に収容保持されている。"Means for Solving the Problem" According to the present invention, a plurality of grooves are formed in parallel on at least one surface of an insulating crystalline substrate, one end of which reaches the front end surface,
These grooves have a slower etching rate in the lateral direction than in the depth direction, and contacts of a conductive material layer are formed on at least the bottom surfaces of these grooves or the upper surfaces of partitions between adjacent grooves, and these contacts are formed. An insulating crystalline substrate is housed and held in the housing with its front end surface facing toward the opening.
「作 用」
絶縁性結晶性基板に溝を形成し、これにコンタクトを導
電性材料層で形成し、その絶縁性結晶性基ヰ反をハウジ
ングに組み込む・ものであるからその組み立てが頗る簡
単である。また絶縁性結晶性基板にフォトリングラフィ
を利用して耐エツチング材のパターンを形成し、これに
対して異方性エツチングにより溝の深さ方向よりも側面
方向のエツチング速度が遅いエツチングを行うことによ
り、一定幅の溝を極めて狭ピッチで再現性よく作ること
ができる。``Function'' It is extremely easy to assemble because a groove is formed in an insulating crystalline substrate, a contact is formed in this with a layer of conductive material, and the insulating crystalline substrate is incorporated into a housing. be. In addition, a pattern of etching-resistant material is formed on an insulating crystalline substrate using photolithography, and etching is performed on this pattern using anisotropic etching, in which the etching rate is slower in the lateral direction than in the depth direction of the groove. This makes it possible to create grooves of a constant width at extremely narrow pitches with good reproducibility.
「実施例」
第1図にこの発明の実施例の要部を示す。絶縁性結晶性
基板lは例えば単結晶シリコンの(100)基板であり
、この絶縁性結晶性基板lの溝を形成すべき箇所以外の
所に、フォトリングラフィ工程により保護膜を付け、ア
ルカリエツチングなどの異方性エツチングを行うことに
より、シリコンの結晶性により決まる定形の溝2を複数
本平行に形成する。これら溝2の側面に対するエツチン
グ速度が遅く、溝2の側面は(111)となる。溝2の
一端は絶縁性結晶性基板lの前方端面1aに達するよう
にされる。"Embodiment" FIG. 1 shows the main part of an embodiment of this invention. The insulating crystalline substrate l is, for example, a (100) substrate of single crystal silicon, and a protective film is applied to the parts of the insulating crystalline substrate l other than the areas where grooves are to be formed by a photolithography process, and then alkali etching is applied. By performing anisotropic etching such as the above, a plurality of parallel grooves 2 having a regular shape determined by the crystallinity of silicon are formed. The etching speed for the side surfaces of these grooves 2 is slow, and the side surfaces of the grooves 2 are (111). One end of the groove 2 is made to reach the front end surface 1a of the insulating crystalline substrate 1.
これら溝2の底面及び側面に金などの導電性材料を蒸着
などの方法により付着させ、更に熱処理を行ってシリコ
ンと金との界面での固相拡散を行い強固に付着したコン
タクト3を形成する。この例では溝2の後方端よりコン
タクト3と連続して基板1の板面上を後方に延長した端
子部3aを同時に形成した場合である。コンタクト3の
厚さは電流容量によっても異なるが、一般に0.5μm
程度とされる。A conductive material such as gold is attached to the bottom and side surfaces of these grooves 2 by a method such as vapor deposition, and then heat treatment is performed to perform solid phase diffusion at the interface between silicon and gold to form a firmly attached contact 3. . In this example, a terminal portion 3a is formed at the same time from the rear end of the groove 2, continuing with the contact 3 and extending rearward on the plate surface of the substrate 1. The thickness of the contact 3 varies depending on the current capacity, but is generally 0.5 μm.
It is considered to be a degree.
第2図に示すようにコンタクト3を形成した絶縁性結晶
性基板1を合成樹脂材のハウジング4内に収容保持する
。この場合ハウジング4の開口5側に絶縁性結晶性基板
1の前方端面1aが位置するようにする。この例では絶
縁性結晶性基板1の両側面を異方性エツチングを行って
(111)とすることによりわずかとがらせ、このとが
りを利用してハウジング4の内面と位置決め係合させて
いる。As shown in FIG. 2, an insulating crystalline substrate 1 having contacts 3 formed thereon is housed and held in a housing 4 made of synthetic resin. In this case, the front end surface 1a of the insulating crystalline substrate 1 is positioned on the opening 5 side of the housing 4. In this example, both side surfaces of the insulating crystalline substrate 1 are anisotropically etched to form (111) so that they are slightly sharpened, and the sharpness is used to position and engage the inner surface of the housing 4.
なお相手コネクタ6は絶縁材のボディ7にフォーク型コ
ンタクト8が保持されて構成される。フォーク型コンタ
クト8のピッチは溝2のピッチと等しくされ、絶縁性結
晶性基板1の両面の対向する溝2の両底面をフォーク型
コンタクト8で挟むように溝2内に挿入され、コンタク
ト3と8とが互いに接続される。この結合の際、コンタ
クトの位置決めのためにガイドピン9がボディ7の前面
の両端部にコンタクト8よりも突出して設けられ、ガイ
ドビン9が挿入される孔10がハウジング4の前面に形
成され、結合の際に絶縁性結晶性基板1がコンタクト8
により破損されるのを防止する。The mating connector 6 is composed of a fork-shaped contact 8 held in a body 7 made of an insulating material. The pitch of the fork-shaped contacts 8 is made equal to the pitch of the grooves 2, and the fork-shaped contacts 8 are inserted into the grooves 2 so as to sandwich both bottom surfaces of the opposing grooves 2 on both sides of the insulating crystalline substrate 1. 8 are connected to each other. During this connection, guide pins 9 are provided at both ends of the front surface of the body 7 to protrude beyond the contacts 8 in order to position the contacts, and a hole 10 into which the guide pins 9 are inserted is formed on the front surface of the housing 4. During bonding, the insulating crystalline substrate 1 is connected to the contact 8
Prevent damage caused by.
第3図にこの発明の他の実施例を示し、第2図と対応す
る部分には同一符号を付けである。この例では隣接する
溝2の間の隔壁11の上面にコンタクト3が形成される
。相手コネクタ6はリーフ状コンタクト12となる。FIG. 3 shows another embodiment of the invention, in which parts corresponding to those in FIG. 2 are given the same reference numerals. In this example, contacts 3 are formed on the upper surface of partition wall 11 between adjacent grooves 2 . The mating connector 6 becomes a leaf-shaped contact 12.
第1図の例においてコンタクト3は溝2の底面のみに形
成してもよい。In the example shown in FIG. 1, the contact 3 may be formed only on the bottom surface of the groove 2.
「発明の効果」
以上述べたように、この発明によれば絶縁性結晶性基板
1にコンタクト3を付着形成し、これをハウジング4内
に組み込むものであるからその組み立て作業が頗る簡単
である。[Effects of the Invention] As described above, according to the present invention, the contacts 3 are formed on the insulating crystalline substrate 1 and then assembled into the housing 4, so the assembly work is extremely simple.
絶縁性結晶性基板lにフォトリゾグラフィ技術と異方性
エツチング技術とを利用して溝2を形成し、?f42内
または隔壁ll上に金属を蒸着、熱処理してコンタクト
3を形成するため、極めて寸法精度の良い狭ピンチのコ
ネクタを再現性よく作ることができる。例えば第1図の
例ではコンタクト3のピンチとして0.3ml11を想
定しているが、0.1■ピツチ以下も可能である。また
、加工精度を数μm以下にすることもできる。なお、相
手コネクタの例えばフォーク型コンタクト8も金属板の
エツチングにより微細加工が可能である。Grooves 2 are formed in an insulating crystalline substrate l using photolithography technology and anisotropic etching technology, and ? Since the contacts 3 are formed by vapor-depositing metal within f42 or on the partition wall ll and heat-treating it, a narrow-pinch connector with extremely high dimensional accuracy can be manufactured with good reproducibility. For example, in the example shown in FIG. 1, the pinch of the contact 3 is assumed to be 0.3 ml11, but a pitch of 0.1 ml or less is also possible. Furthermore, the processing accuracy can be reduced to several μm or less. Note that the mating connector, for example, the fork-shaped contact 8, can also be microfabricated by etching a metal plate.
また溝構造とすることによりコンタクト3間の絶縁分離
が確実に行われる。Further, by using the groove structure, insulation isolation between the contacts 3 is reliably performed.
第1図はこの発明の実施例の要部を示す斜視図、第2図
は第1図の要部を適用したこの発明の実施例及びその相
手コネクタを示す斜視図、第3図はこの発明の他の実施
例及びその相手コネクタを示す斜視図である。Fig. 1 is a perspective view showing the main parts of an embodiment of the present invention, Fig. 2 is a perspective view showing an embodiment of the invention to which the main parts of Fig. 1 are applied and its mating connector, and Fig. 3 is a perspective view showing the main parts of the invention. It is a perspective view which shows another Example and its mating connector.
Claims (1)
方端面に達する複数の溝が平行に形成され、これら溝は
その深さ方向よりも側面方向のエッチング速度が遅いも
のであり、 これら溝の少なくとも底面または隣接溝間の隔壁の上面
に導電性材料層のコンタクトがそれぞれ形成され、 これらコンタクトが形成された絶縁性結晶性基板が、そ
の前方端面側を開口面側としてハウジング内に収容保持
されている狭ピッチコネクタ。(1) A plurality of parallel grooves are formed on at least one surface of the insulating crystalline substrate, one end of which reaches the front end face, and the etching rate of these grooves is slower in the side direction than in the depth direction; Contacts made of a conductive material layer are formed on at least the bottom surface of the housing or the top surface of the partition between adjacent grooves, and the insulating crystalline substrate on which these contacts are formed is housed and held in the housing with its front end side as the open side. Narrow pitch connector.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1126471A JPH02304883A (en) | 1989-05-19 | 1989-05-19 | Narrow pitch connector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1126471A JPH02304883A (en) | 1989-05-19 | 1989-05-19 | Narrow pitch connector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02304883A true JPH02304883A (en) | 1990-12-18 |
Family
ID=14936043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1126471A Pending JPH02304883A (en) | 1989-05-19 | 1989-05-19 | Narrow pitch connector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02304883A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57123673A (en) * | 1981-01-26 | 1982-08-02 | Nippon Telegraph & Telephone | Microsocket |
JPS5880275A (en) * | 1981-10-30 | 1983-05-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Contact unit |
-
1989
- 1989-05-19 JP JP1126471A patent/JPH02304883A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57123673A (en) * | 1981-01-26 | 1982-08-02 | Nippon Telegraph & Telephone | Microsocket |
JPS5880275A (en) * | 1981-10-30 | 1983-05-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Contact unit |
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