JP2001118982A - Method of manufacturing semiconductor device and semiconductor integrated device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device and a semiconductor integrated device, which realizes short distance connection and high density mounting. SOLUTION: A columnar support substrate 12 having a curve face and semiconductor chips 14 which are bonded along the curve face of the support substrate 12 and in which plural electrodes 18b to 18g are formed on a surface are formed are installed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a method of manufacturing a semiconductor integrated device, and more particularly to a semiconductor device and a method of manufacturing a semiconductor integrated device capable of realizing short-distance connection and high-density mounting.

[0002]

2. Description of the Related Art Recently, the operating speed of integrated circuit devices has been increased, and accordingly, it has been required to reduce the wiring length between semiconductor devices.

For example, when a signal having a frequency of several GHz is used, it is required to reduce the wiring length to several mm or less.

On the other hand, with the increase in operating speed, the technology for mounting memories and the like at high density has also advanced.

For example, recently, there has been proposed a technique of mounting a memory card on which several memory packages are mounted so as to stand upright on a motherboard. In addition, a technique has been proposed in which a plurality of memory packages are horizontally stacked and mounted to improve the mounting density.

[0006] Further, there has been proposed a technique for improving the mounting density by flip-chip bonding semiconductor chips facing each other.

[0007]

However, with the above-described mounting technology, it is difficult to further shorten the wiring for connecting semiconductor devices such as a memory card, and a further increase in operating speed is realized. The above was an obstacle. Further, with the above mounting technology, it is difficult to further increase the mounting density.

In addition, the improvement in mounting density by the above-mentioned flip chip bonding is limited to stacking two semiconductor chips, and three or more semiconductor chips cannot be stacked and mounted.

An object of the present invention is to provide a semiconductor device and a method of manufacturing a semiconductor integrated device which can realize further short-range connection and high-density mounting.

[0010]

An object of the present invention is to provide a column-shaped support substrate having a curved surface, and a semiconductor chip bonded along the curved surface of the support substrate and having a plurality of electrodes formed on the surface. This is achieved by a semiconductor device characterized by the above-mentioned features. As a result, the semiconductor devices can be connected to each other over a very short distance, and the mounting density can be improved.

In the above-described semiconductor device, it is preferable that a hole is formed in the support substrate along a direction in which the support substrate extends.

The above object is also achieved by providing a plurality of semiconductor devices each having a columnar support substrate having a curved surface, and a semiconductor chip having a plurality of electrodes formed on the surface thereof, the semiconductor chip being bonded along the curved surface of the support substrate. A method of manufacturing a semiconductor integrated device to be mounted, comprising: arranging a plurality of semiconductor devices such that the plurality of electrodes face each other, and electrically connecting the semiconductor devices to each other. This is achieved by a method of manufacturing a device. As a result, the semiconductor devices can be connected to each other over a very short distance, and the mounting density can be improved.

In the above-described method for manufacturing a semiconductor integrated device, it is preferable that the semiconductor device is mounted such that the extending directions of the support substrates are parallel to each other.

In the above-described method for manufacturing a semiconductor integrated device, it is preferable that the semiconductor device is mounted such that the extending directions of the support substrates intersect each other.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a semiconductor device and a semiconductor integrated device according to one embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a conceptual diagram illustrating the semiconductor device according to the present embodiment. FIG. 2 is a process diagram illustrating the method for manufacturing the semiconductor device according to the present embodiment. FIG. 3 is a perspective view illustrating the method for manufacturing the semiconductor integrated device according to the present embodiment. (Semiconductor Device) First, the semiconductor device according to the present embodiment will be explained with reference to FIG. FIG. 1A is a plan view showing a semiconductor chip used in the semiconductor device of the present embodiment.
FIG. 2B is a perspective view of the semiconductor device according to the present embodiment. Note that, for simplification of the description, the solder bumps formed on the electrodes are omitted. In FIG. 1B, the electrodes 18h and 18i are omitted.

As shown in FIG. 1B, the semiconductor device 10 according to the present embodiment has a cylindrical supporting substrate 12.
Is wound around the semiconductor chip 14.

FIG. 1A is a plan view showing the semiconductor chip 14 before it is wound around the support substrate 12. A logic circuit, a memory, and the like (not shown) are formed on the semiconductor chip 14.

The substrate of the semiconductor chip 14 has a thickness of 5
A thin silicon substrate 16 having a thickness of about 0 to 100 μm is used. Since the semiconductor chip 14 using such a thin silicon substrate 16 can be easily bent, it can be wound around the side surface of the support substrate 12 without causing damage to a logic circuit, a memory, or the like. The silicon substrate 16
Is not limited to 50 to 100 μm, and may be thinner or thicker. However, it is necessary to appropriately set the thickness of the silicon substrate 16 so that the logic circuit and the memory are not damaged when the semiconductor chip 14 is wound around the support substrate 12.

As shown in FIG. 1A, a silicon substrate 1
On 6, electrodes 18 a to 18 g are formed in seven rows in the vertical direction on the paper surface. The intervals between the rows of the electrodes 18a to 18g are set to be equal to each other.

Of the electrodes 18a to 18g formed in seven columns, the electrode 18g in the left column in the drawing is a penetrating electrode formed to penetrate from the front side to the rear side of the silicon substrate 16. Since the electrode 18g is a through electrode, when the semiconductor chip 14 is wound around the support substrate 12, the back side of the through electrode 18g is connected to the electrode 18a. For this reason,
A logic circuit or the like near the through electrode 18g and a logic circuit or the like near the electrode 18a can be connected with an extremely short distance.

On the silicon substrate 16, a row of electrodes 18h is formed on the upper side of the paper, and the electrodes 18h are formed on the lower side of the paper.
8i are formed in one row. These electrodes 18h, 18
i is used to electrically connect the semiconductor device 10 to the circuit board, for example, when the semiconductor device 10 is mounted on a circuit board.

The shape of the support substrate 12 is as described above.
It is cylindrical. Since a cylindrical support substrate has a larger surface area than a columnar support substrate, the air cooling effect is greater than when a simple columnar support substrate is used. Also,
Since the cylindrical support substrate 12 can also allow a coolant to pass through the holes 20, the semiconductor chip 14 can be cooled more effectively.

Thus, the semiconductor device 10 in which the electrodes 18b to 18g are formed in six rows along the extending direction of the support substrate 12 is configured.

In the semiconductor device according to the present embodiment, since the semiconductor chip is wound around the side surface of the support substrate, it can be directly connected to the electrode of another semiconductor device via the electrode formed on the side surface. it can. Therefore, according to the present embodiment, the electrodes of the semiconductor device can be electrically connected to each other over a very short distance.

In addition, according to the present embodiment, since the support substrate is formed in a cylindrical shape, the semiconductor chip can be wound around the side surface of the support substrate without being bent at an acute angle. Therefore, according to the present embodiment, it is possible to prevent the logic circuit and the like formed in the semiconductor chip from being damaged.

Further, according to the present embodiment, since the cylindrical support substrate is used, the surface area of the support substrate can be increased and the air can be easily cooled. Also,
Because it is possible to pass the coolant through the holes of the cylindrical support substrate,
By passing a coolant through the holes, the semiconductor device can be cooled more effectively than in the case of air cooling. (The Method for Fabricating the Semiconductor Device) Next, the method for fabricating the semiconductor device according to the present embodiment will be explained with reference to FIG.

First, a logic circuit,
A memory, electrodes 18a to 18i, and the like are formed, thereby forming a plurality of semiconductor chips 14 (see FIG. 2A).
FIG. 2B is an enlarged plan view showing the semiconductor chip 14 formed on the silicon wafer 22. The through electrode 18g can be formed by etching the silicon substrate 16 to form a hole penetrating from the front surface side to the rear surface side of the silicon substrate 16, and further forming a conductive film or the like near the hole. it can.

In this embodiment, the semiconductor chip 14
Is wound around the side surface of the support substrate 12, the semiconductor chip 14 is bent to a certain extent. Therefore, the semiconductor chip 14
It is desirable to form a logic circuit or the like in consideration of a change in characteristics of a transistor or the like when the semiconductor device is bent.

Next, solder bumps (not shown) are formed on the electrodes 18a to 18i of each semiconductor chip 14 formed on the silicon wafer 22. The solder bumps are desirably formed in an appropriate size so that adjacent electrodes can be connected when the semiconductor device is mounted on a circuit board or the like.

Next, the back side of the silicon wafer 22 is polished, so that the thickness of the silicon wafer 22 is reduced to 50 to 10 mm.
Make it about 0 μm. When polishing the back surface side of the silicon wafer 22, it is desirable to fix the surface of the silicon wafer 22 using a plate-shaped jig (not shown) having excellent planar accuracy. As a material of the plate-shaped jig, a resin or the like that can be removed from the surface of the silicon wafer 22 can be used.

Next, the silicon wafer 22 is cut, whereby a plurality of semiconductor chips 14 are obtained.

Next, a cylindrical support substrate 12 is prepared.
As the material of the support substrate 12, it is desirable to use a material having a thermal expansion coefficient substantially equal to that of the substrate material of the semiconductor chip 14. This is to reduce the stress applied to the semiconductor chip 14 due to the temperature change. When silicon is used as the substrate material of the semiconductor chip 14, it is desirable to use a material having a thermal expansion coefficient substantially equal to that of silicon. In the present embodiment, since silicon is used as the substrate material of the semiconductor chip 14, for example, tungsten, molybdenum, ceramic, aluminum nitride, low thermal expansion glass, or low thermal expansion resin can be used as the material of the support substrate 12. .

Next, a Ni—Au film (not shown) is formed on the side surface of the support substrate 12 by plating. Next, N
A die bonding material foil (not shown) made of Au / Si is attached on the i-Au film.

Next, the semiconductor chip 14 is brought into close contact with the side surface of the support substrate 12 to which the die bonding material is attached, and heat treatment is performed. Thus, the semiconductor chip 14 is bonded to the side surface of the support substrate 12 (see FIG. 2C).

Thus, the semiconductor device according to the present embodiment is manufactured. (The Method for Fabricating the Semiconductor Integrated Device) Next, the method for fabricating the semiconductor integrated device according to the present embodiment will be explained with reference to FIG.

As shown in FIG. 3, on the circuit board 24,
A plurality of the above-described semiconductor devices 10 are vertically mounted.
Six rows of electrodes 18b to 18g are formed on the side surface of the semiconductor device 10 (see FIG. 1C), and the intervals between these rows are equal. Accordingly, the rows of the electrodes 18b to 18g form an angle of 60 ° about the center axis of the cylinder when viewed from the upper surface side of the semiconductor device 10.

Therefore, for one semiconductor device 10,
If the semiconductor devices 10 are mounted so that six semiconductor devices 10 are provided therearound, the adjacent semiconductor devices 10 are connected to each other by the electrodes 18 b to 18 b.
The connection can be made very short via g.

FIG.
Although the case where one semiconductor device 10 is provided is shown, if a large number of semiconductor devices 10 are further mounted therearound,
The semiconductor device 10 can be mounted in a honeycomb shape as a whole.

Further, for example, six semiconductor devices 10 provided with a memory or the like may be mounted around one semiconductor device 10 provided with a logic circuit. With such mounting, an extremely sophisticated semiconductor integrated device can be realized.

As described above, according to the present embodiment, the electrodes of the semiconductor device can be connected to each other at an extremely short distance, and the mounting density can be extremely increased.

In addition, since the cylindrical support substrate is used in the semiconductor device, the surface area of the support substrate can be increased, and the air can be effectively cooled.
Furthermore, if a refrigerant is allowed to flow inside the cylinder, a further cooling effect can be obtained. (Modification (Part 1) of Semiconductor Device) Next, a modification (Part 1) of the semiconductor device according to the present embodiment will be explained with reference to FIG. FIG. 4A is a plan view of a semiconductor chip used in this modification, and FIG. 4B is a perspective view of a semiconductor device according to this modification.

Semiconductor chip 14a used in this modification
FIG. 1 shows that the through electrode 18g is not formed.
This is different from the semiconductor chip 14 shown in FIG. That is,
In the present modification, a semiconductor chip 14a in which electrodes 18a to 18f are formed in six rows on a silicon substrate 14 is used.

When the semiconductor device 10a is configured using such a semiconductor chip 14a, it is difficult to connect the logic circuit and the like on the electrode 18a side to the logic circuit and the like on the electrode 18f in a short distance. About the point that it can be connected to an adjacent semiconductor device via an electrode in a short distance, etc.
This is the same as the semiconductor device shown in FIG. (Modification (Part 2) of Semiconductor Device) Next, a modification (Part 2) of the semiconductor device according to the present embodiment will be explained with reference to FIG. FIG. 5 is a conceptual diagram showing a semiconductor device according to the present modification.

The semiconductor device 10b according to this modification is similar to that of FIG.
4B is different from the semiconductor device 10a shown in FIG. 4B in that a support substrate 12a having the shape shown in FIG.
That is, the support substrate 12a used in the present embodiment is:
The left side of the paper has a cylindrical shape, and the outer shape of the right side of the paper has a prismatic shape.

When the semiconductor chip 14 is extremely small, it is difficult to wind the semiconductor chip 14 around the cylindrical support substrate 12. The semiconductor chip 14 may be bonded to the curved surface 12a. (Modification (1) of Method of Manufacturing Semiconductor Integrated Device) Next, a modification (1) of the method of manufacturing the semiconductor integrated device according to the present embodiment will be explained with reference to FIG. FIG. 6 is a conceptual diagram showing a method for manufacturing a semiconductor integrated device according to the present modification. FIG. 6 shows the semiconductor device viewed from a direction horizontal to the circuit board.

The main feature of the method of manufacturing a semiconductor integrated device according to this modification is that a plurality of semiconductor devices are horizontally mounted on a circuit board.

That is, as shown in FIG. 6, in the method of manufacturing a semiconductor integrated device according to the present modification, a plurality of semiconductor devices 10 are mounted horizontally on the upper surface and the lower surface of the circuit board 24a.

As described above, even when the semiconductor device is mounted horizontally on the circuit board, the semiconductor devices can be connected to each other at an extremely short distance via the electrode, and the mounting density of the semiconductor device 10 is improved. be able to. (Modification (2) of Method of Manufacturing Semiconductor Integrated Device) Next, a modification (2) of the method of manufacturing the semiconductor integrated device according to the present embodiment will be explained with reference to FIG. FIG. 7 is a conceptual diagram showing a method for manufacturing a semiconductor integrated device according to the present modification. FIG. 7 shows the semiconductor integrated device viewed from a direction perpendicular to the circuit board.

The main feature of the method of manufacturing a semiconductor integrated device according to this modification is that a plurality of semiconductor devices having different diameters are mounted.

That is, as shown in FIG. 7, in the method of manufacturing the semiconductor integrated device according to the present embodiment, the semiconductor device using the large-diameter support substrate 12c is surrounded by the semiconductor device 10c using the small-diameter support substrate 12b. Four devices 10d are mounted.

Even when the semiconductor devices having different diameters are mounted as described above, the semiconductor devices can be connected to each other at an extremely short distance via the electrodes, and the mounting density of the semiconductor devices can be improved. be able to. (Modification (3) of Method of Manufacturing Semiconductor Integrated Device) Next, a modification (3) of the method of manufacturing the semiconductor integrated device according to the present embodiment will be explained with reference to FIG. FIG. 8 is a conceptual diagram showing a method for manufacturing a semiconductor integrated device according to the present modification. FIG. 8 shows the semiconductor device viewed from a direction perpendicular to the circuit board.

The main feature of the method for fabricating the semiconductor integrated device according to the present embodiment is that the semiconductor devices are mounted so as to cross each other.

That is, as shown in FIG. 8, in the method for fabricating the semiconductor integrated device according to the present embodiment, two semiconductor devices 1
0e is mounted in parallel with the circuit board, and the two semiconductor devices 1
0e is implemented. Since the semiconductor devices 10e cross each other, it is possible to prevent heat from being trapped around the semiconductor device 10e.

Further, if the semiconductor devices 10e are stacked, the degree of integration can be further increased.

As described above, even when the semiconductor devices are mounted so as to cross each other, the semiconductor devices can be connected to each other at an extremely short distance via the electrodes, and the mounting density of the semiconductor devices can be improved. be able to. Further, since the semiconductor devices are mounted so as to cross each other, it is possible to prevent heat from being trapped around the semiconductor device.

[Modified Embodiment] The present invention is not limited to the above-described embodiment, and various modifications are possible.

For example, in the above embodiment, one semiconductor chip is bonded to one support substrate, but a plurality of semiconductor chips may be bonded to one support substrate. For example,
Four semiconductor chips may be bonded to one support substrate. In this case, semiconductor chips having different sizes may be used instead of semiconductor chips having the same size.

In the above embodiment, the support substrate having a cylindrical shape is used, but the support substrate is not limited to the cylindrical shape. For example, support substrates of various shapes such as an elliptical support substrate can be used. When the thickness of the substrate of the semiconductor chip is large, it is desirable to bond the semiconductor chip to the side surface of the silicon substrate having a curved surface as gentle as possible in order to reduce the stress applied to the semiconductor chip.

In the above embodiment, the cylindrical support substrate is used. However, the support substrate does not have to be formed with holes. For example, a columnar support substrate may be used.

In the above embodiment, the back side of the silicon wafer is thinned by polishing the back side of the silicon wafer at the stage of the silicon wafer before cutting. May be thinned.

In the above embodiment, a support substrate having a curved surface is used, but a support substrate having no curved surface may be used. For example, a semiconductor chip may be bonded to each of the side surfaces of the polygonal prism.

[0062]

As described above, according to the present invention, since the semiconductor chip is wound around the side surface of the support substrate of the semiconductor device, the semiconductor chip is directly connected to the electrode of another semiconductor device via the electrode formed on the side surface. Can be connected. Therefore, according to the present embodiment, the electrodes of the semiconductor device can be electrically connected to each other over a very short distance.

Moreover, according to the present invention, since the supporting substrate is formed in a cylindrical shape, the supporting substrate is not bent at an acute angle.
The semiconductor chip can be wound around the side surface of the support substrate. Therefore, according to the present invention, it is possible to prevent a logic circuit or the like formed in a semiconductor chip from being damaged.

Further, according to the present invention, since the cylindrical support substrate is used, the surface area of the support substrate can be increased, and the air can be easily cooled. In addition, since it is possible to pass the coolant through the holes of the cylindrical support substrate, it is possible to cool the semiconductor device more effectively by passing the coolant through the holes than in the case of air cooling.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram illustrating a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a process diagram illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 3 is a perspective view illustrating a method for manufacturing a semiconductor integrated device according to an embodiment of the present invention.

FIG. 4 is a conceptual diagram showing a modification (No. 1) of the semiconductor device according to one embodiment of the present invention;

FIG. 5 is a conceptual diagram showing a modification (No. 2) of the semiconductor device according to one embodiment of the present invention;

FIG. 6 is a conceptual diagram showing a modification (part 1) of the method for manufacturing a semiconductor integrated device according to one embodiment of the present invention;

FIG. 7 is a conceptual diagram showing a modification (part 2) of the method for manufacturing a semiconductor integrated device according to one embodiment of the present invention;

FIG. 8 is a conceptual diagram showing a modified example (part 3) of the method for manufacturing a semiconductor integrated device according to one embodiment of the present invention;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Semiconductor device 10a ... Semiconductor device 10b ... Semiconductor device 10c ... Semiconductor device 10d ... Semiconductor device 10e ... Semiconductor device 12 ... Support substrate 12a ... Support substrate 12b ... Support substrate 12c ... Support substrate 14 ... Semiconductor chip 14a ... Semiconductor chip 16 ... Silicon substrate 18a to 18h Electrode 20 Hole 22 Silicon wafer 24 Circuit board 24a Circuit board

Claims (5)

[Claims] 1. A semiconductor device, comprising: a column-shaped support substrate having a curved surface; and a semiconductor chip adhered along the curved surface of the support substrate and having a plurality of electrodes formed on a surface thereof. 2. The semiconductor device according to claim 1, wherein a hole is formed in the support substrate along a direction in which the support substrate extends. 3. A semiconductor integrated circuit for mounting a plurality of semiconductor devices each having a columnar support substrate having a curved surface and a semiconductor chip adhered along the curved surface of the support substrate and having a plurality of electrodes formed on a surface thereof. A method of manufacturing a semiconductor integrated device, comprising: arranging a plurality of semiconductor devices so that the plurality of electrodes face each other; and electrically connecting the semiconductor devices to each other. . 4. The method for manufacturing a semiconductor integrated device according to claim 3, wherein the semiconductor devices are mounted such that the supporting substrates extend in parallel to each other. 5. The method for manufacturing a semiconductor integrated device according to claim 3, wherein said semiconductor device is mounted such that extending directions of said support substrates cross each other.