JPS622453B2 - - Google Patents

Info

Publication number
JPS622453B2
JPS622453B2 JP53004926A JP492678A JPS622453B2 JP S622453 B2 JPS622453 B2 JP S622453B2 JP 53004926 A JP53004926 A JP 53004926A JP 492678 A JP492678 A JP 492678A JP S622453 B2 JPS622453 B2 JP S622453B2
Authority
JP
Japan
Prior art keywords
growth
crystal
plate
solution
bath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53004926A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5498173A (en
Inventor
Yoichi Oosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP492678A priority Critical patent/JPS5498173A/ja
Publication of JPS5498173A publication Critical patent/JPS5498173A/ja
Publication of JPS622453B2 publication Critical patent/JPS622453B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP492678A 1978-01-19 1978-01-19 Liquid phase epitaxial growth device Granted JPS5498173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP492678A JPS5498173A (en) 1978-01-19 1978-01-19 Liquid phase epitaxial growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP492678A JPS5498173A (en) 1978-01-19 1978-01-19 Liquid phase epitaxial growth device

Publications (2)

Publication Number Publication Date
JPS5498173A JPS5498173A (en) 1979-08-02
JPS622453B2 true JPS622453B2 (enrdf_load_stackoverflow) 1987-01-20

Family

ID=11597197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP492678A Granted JPS5498173A (en) 1978-01-19 1978-01-19 Liquid phase epitaxial growth device

Country Status (1)

Country Link
JP (1) JPS5498173A (enrdf_load_stackoverflow)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5314341B2 (enrdf_load_stackoverflow) * 1972-09-18 1978-05-17
JPS50137381A (enrdf_load_stackoverflow) * 1974-04-19 1975-10-31
JPS5159074A (ja) * 1974-11-20 1976-05-22 Tokyo Shibaura Electric Co Ekisoseichosochi
JPS5160688A (ja) * 1974-11-25 1976-05-26 Nippon Telegraph & Telephone Ekisoketsushoseichosochi

Also Published As

Publication number Publication date
JPS5498173A (en) 1979-08-02

Similar Documents

Publication Publication Date Title
US3631836A (en) Fixed gradient liquid epitaxy apparatus
US4088514A (en) Method for epitaxial growth of thin semiconductor layer from solution
US3809584A (en) Method for continuously growing epitaxial layers of semiconductors from liquid phase
US20120042822A1 (en) METHOD FOR FABRICATING SiC SUBSTRATE
JPS622453B2 (enrdf_load_stackoverflow)
JPH029444B2 (enrdf_load_stackoverflow)
JPS6131385A (ja) 液相エピタキシヤル成長方法
JP2508726B2 (ja) 液相エピタキシャル成長方法
JPS62292693A (ja) 液相エピタキシャル成長方法
JPH0243723A (ja) 溶液成長装置
JPS63215589A (ja) 液相エピタキシヤル成長装置
JPS6288321A (ja) 液相成長方法
JPS589794B2 (ja) 半導体の液相多層薄膜成長法および成長装置
JP3151277B2 (ja) 液相エピタキシャル成長法
JPH0687459B2 (ja) 気相成長装置
JPS6311596A (ja) 多元化合物半導体の二相融液法による液相エピタキシヤル成長法
JPS61294811A (ja) 半導体結晶製造装置
JPS63304614A (ja) 半導体エピタキシャル成長方法
JPS5834929B2 (ja) ハンドウタイハクマクエキソウセイチヨウホウホウオヨビ ソウチ
JPH02157185A (ja) 液相エピタキシヤル成長方法及び成長装置
JPH0519516B2 (enrdf_load_stackoverflow)
JPS62149121A (ja) 結晶成長装置
JPS6311597A (ja) 液相エピタキシヤル成長方法及びその装置
JPS63138724A (ja) 液相エピタキシヤル成長装置
JPH0697098A (ja) 半導体結晶の成長方法