JPS62244165A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS62244165A JPS62244165A JP61088810A JP8881086A JPS62244165A JP S62244165 A JPS62244165 A JP S62244165A JP 61088810 A JP61088810 A JP 61088810A JP 8881086 A JP8881086 A JP 8881086A JP S62244165 A JPS62244165 A JP S62244165A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2
- sin
- atmosphere containing
- chlorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000460 chlorine Substances 0.000 claims abstract description 9
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 9
- 239000003990 capacitor Substances 0.000 claims abstract description 8
- 230000001590 oxidative effect Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 20
- 229910052681 coesite Inorganic materials 0.000 abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 9
- 239000000377 silicon dioxide Substances 0.000 abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体記憶装置、特に１トランジスタ・１キヤ
パシタ型のメモリ・セルを有し、そのキャパシタが５ｉ
Ｏｚ／ＳｉＮ／５ｉＯｚ構造であるＭＯＳダイナミック
・２ノダム・アクセス・メモリにおいて、ＳｉＮの製造
の際に生じるその下層の５ｉｎ２の品質を劣化させる幣
害を除去する製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor memory device, in particular, a memory cell having one transistor and one capacitor, the capacitor of which is 5i.
The present invention relates to a manufacturing method for eliminating damage that degrades the quality of the underlying 5in2 layer that occurs during SiN manufacturing in a MOS dynamic 2-nodam access memory having an Oz/SiN/5iOz structure.
近年、微細加工技術の進歩に従い、ＭＯＳ ＤＲＡＭに
使用する素子の寸法は年々縮小の一途をたどっている。In recent years, with advances in microfabrication technology, the dimensions of elements used in MOS DRAMs have been decreasing year by year.
その縮小化の一環として、１トランジスタ・１−？ヤパ
シタ型のメモリ・セルにおいて、キャパシタ部の構造と
して、絶縁破壊強度及びピンホール対策のために、Ｓｉ
ｎｇ一層から５ｔ（ｈ／ＳｉＮ／５ｉＯｚの構造がある
。As part of its miniaturization, 1 transistor/1-? In Yapacita type memory cells, Si is used as the structure of the capacitor part to improve dielectric breakdown strength and prevent pinholes.
There are structures ranging from ng single layer to 5t (h/SiN/5iOz).
ＭＯ８ＤＲＡＭの大容量化に従い、メモリ・セルのキャ
パシタ部も薄膜化する傾向が強くなっている。そこで、
従来、Ｓ ｉＯｚ膜一層で、製造していたが、薄膜化に
伴ない、絶縁破壊強度は最大のものは上昇するが、平均
すると、ピンホールが増大することから、見掛は上方化
することが知られている。As the capacity of MO8DRAM increases, there is a strong tendency for capacitor portions of memory cells to become thinner. Therefore,
Conventionally, SiOz films have been manufactured using a single layer, but as the film becomes thinner, the maximum dielectric breakdown strength increases, but on average, the number of pinholes increases, so the appearance increases. It has been known.
そこで、５ｉｆｔ膜一層の代わりに、５ｉｎ２／ＳｉＮ
／Ｓ １０２ の三層構造によりピンホールの減少が
見込める。ところが、この場合、ＳｉＮの介在により界
面や膜質が劣化するという欠点がある。Therefore, instead of a single layer of 5ift film, 5in2/SiN
The three-layer structure of /S 102 can be expected to reduce pinholes. However, in this case, there is a drawback that the interface and film quality deteriorate due to the presence of SiN.
本発明の半導体記憶装置の製造方法は、Ｓ ｉＯ２／Ｓ
ｉＮ／５ｉＯｚの構造で、界面や膜質の上質化を見込を
ためＳｉｎｇの製造の際に、塩素を酸化雰囲気中″に１
％−３１含ませることを特徴としている。The method for manufacturing a semiconductor memory device of the present invention includes SiO2/S
With the iN/5iOz structure, chlorine was added to the oxidizing atmosphere during the production of Sing in order to improve the interface and film quality.
It is characterized by containing %-31.
次に、本発明について、図面を参照して説明する。第１
図は本発明の一実施例の縦断面図である。Next, the present invention will be explained with reference to the drawings. 1st
The figure is a longitudinal sectional view of one embodiment of the present invention.
半導体（Ｓｉ）基板上に、絶縁膜（１０２，１０３，１
０４）を形成する。その際、５ｉ０２ （１０２）
をまず、塩素を酸素に対して１％−５ｓ含ませた酸化雰
囲気中で作製し、５ｉｎｓ膜とＳｉ 基板間界面及びＳ
ｉ０ｇ膜の品質を上げておく。次に、下層の５ｉｎｓ膜
（１０２）ｔｃ存在するピンホール、ウィーク・スボ質
化し、ピンホール等を防ぐために、さらに、塩素を酸素
に対して１％−５％含ませた酸化雰囲気以上説明したよ
うに、本発明はメモリ・セルのキヤパシタの絶縁膜とし
て、５ｉ（ｈ／ＳｉＮ／５ｉＯｚ三層膜に帰因する腺及
び界面を５ｉＯｚ形成時に、塩素を酸素に対して、１％
−５％含ませることにより、上質化する効果がある。Insulating films (102, 103, 1
04) is formed. At that time, 5i02 (102)
was first prepared in an oxidizing atmosphere containing chlorine at 1% of oxygen for 5 seconds, and the interface between the 5ins film and the Si substrate and the S
Improve the quality of i0g film. Next, in order to prevent pinholes, weak spots, etc. that exist in the lower 5ins film (102) tc, an oxidizing atmosphere containing 1% to 5% chlorine relative to oxygen was added. As described above, the present invention uses a 5iOz insulating film for a capacitor of a memory cell when forming a 5iOz gland and an interface resulting from a 5i(h/SiN/5iOz three-layer film) by adding 1% chlorine to oxygen.
-5% inclusion has the effect of improving quality.
第１図は本発明の一実施例の縦断面図である。
１０１・・・・・・半導体基板（Ｓｉ）、１０２・・・
・・・Ｓｉ０ｇ膜、１０３・・・・・・ＳｉＮ膜、１０
４・・・・＝ＳｉＯｚ膜。FIG. 1 is a longitudinal sectional view of an embodiment of the present invention. 101... Semiconductor substrate (Si), 102...
...Si0g film, 103...SiN film, 10
4...=SiOz film.
Claims (1)
ＳｉＯ＿２／ＳｉＮ／ＳｉＯ＿２構造を用いた場合、塩
素を含ませた酸化雰囲気中でＳｉＯ＿２を製造すること
を特徴とする半導体装置の製造方法。In a semiconductor memory device having a flat capacitor,
A method for manufacturing a semiconductor device, characterized in that when using a SiO_2/SiN/SiO_2 structure, SiO_2 is manufactured in an oxidizing atmosphere containing chlorine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61088810A JPS62244165A (en) | 1986-04-16 | 1986-04-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61088810A JPS62244165A (en) | 1986-04-16 | 1986-04-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62244165A true JPS62244165A (en) | 1987-10-24 |
Family
ID=13953246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61088810A Pending JPS62244165A (en) | 1986-04-16 | 1986-04-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62244165A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH033357A (en) * | 1989-05-31 | 1991-01-09 | Toshiba Corp | Semiconductor device |
| EP0459763A1 (en) * | 1990-05-29 | 1991-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistors |
-
1986
- 1986-04-16 JP JP61088810A patent/JPS62244165A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH033357A (en) * | 1989-05-31 | 1991-01-09 | Toshiba Corp | Semiconductor device |
| EP0459763A1 (en) * | 1990-05-29 | 1991-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistors |
| US6607947B1 (en) | 1990-05-29 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions |
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