JPS62242374A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS62242374A JPS62242374A JP61086503A JP8650386A JPS62242374A JP S62242374 A JPS62242374 A JP S62242374A JP 61086503 A JP61086503 A JP 61086503A JP 8650386 A JP8650386 A JP 8650386A JP S62242374 A JPS62242374 A JP S62242374A
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving surface
- emitting element
- photoelectric conversion
- conversion device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 230000005855 radiation Effects 0.000 abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 6
- 239000005357 flat glass Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体レーザ素子等の発光素子より放射される光を受光
して検知する光電変換装置であって、発光素子より放射
される光を受光する受光面が凹型状の球面となって、レ
ーザ素子より放射される光が、拡がり角度をもって拡が
りなから光電変換装置に到達しても、高精度にかつ高効
率にその放射光を検知できるようにした光電変換装置。[Detailed Description of the Invention] [Summary] A photoelectric conversion device that receives and detects light emitted from a light emitting element such as a semiconductor laser element, in which the light receiving surface that receives the light emitted from the light emitting element has a concave shape. A photoelectric conversion device that can detect emitted light with high precision and efficiency even if the light emitted from a laser element has a spherical surface and reaches the photoelectric conversion device after spreading at a spreading angle.
本発明は光電変換装置に係り、特に半導体レーザ素子等
より所定の拡がり角度を持って放射される光を高精度に
、かつ高効率に受光検知する光電変換装置に関する。The present invention relates to a photoelectric conversion device, and more particularly to a photoelectric conversion device that highly accurately and efficiently receives and detects light emitted from a semiconductor laser element or the like with a predetermined spread angle.
半導体レーザ素子を用いたレーザ発光装置には、通常そ
のレーザ素子より放射されるレーザ光を受光検知し、そ
の検知した値をもとにして、レーザ素子に印加する電圧
を調整するモニタ用のＰＩＮダイオードがレーザ素子に
近接して設けられている。A laser emitting device using a semiconductor laser element usually has a PIN for monitoring that detects the laser light emitted from the laser element and adjusts the voltage applied to the laser element based on the detected value. A diode is provided adjacent to the laser element.
従来のこのような光電変換装置の断面図を第１図に示す
。A cross-sectional view of such a conventional photoelectric conversion device is shown in FIG.
図示するように従来の光電変換装置は、ＰＩＮダイオー
ドを形成したゲルマニウム等の半導体チップ１が、絶縁
性の接着剤等を用いて金属製のベース２上に設置され、
このベース２上には平板状のガラスよりなるウィンドウ
ガラス３が設けられている。As shown in the figure, in the conventional photoelectric conversion device, a semiconductor chip 1 made of germanium or the like in which a PIN diode is formed is installed on a metal base 2 using an insulating adhesive or the like.
A window glass 3 made of flat glass is provided on the base 2.
そして半導体チップ１内に形成されたＰＮ接合部よりな
る受光面にて、半導体レーザ素子等の発光素子より放射
されたレーザ光を検知している。Laser light emitted from a light-emitting element such as a semiconductor laser element is detected at a light-receiving surface made of a PN junction formed within the semiconductor chip 1.
ところで、半導体レーザ素子は数μｍのスポットが拡っ
て発光するため、その放射光の光強度がピーク値の１／
２となる点では、その放射光の拡がり角度は３０〜６０
度の拡がり角度にもなる。By the way, since a semiconductor laser element emits light with a spread spot of several μm, the light intensity of the emitted light is 1/1 of the peak value.
2, the spread angle of the emitted light is 30 to 60
It is also the spread angle of degrees.
このような拡がり角度の大きいレーザ光を受光する場合
、前記した平板状の半導体チップの受光面の直径を１０
〜１５ｍと大きくした光電変換装置を用いて受光してい
る。When receiving laser light with such a large spread angle, the diameter of the light-receiving surface of the above-mentioned flat semiconductor chip is set to 10
Light is received using a photoelectric conversion device that is as large as ~15 m.
然し、従来の装置に於けるように、受光面が平板状であ
ると、レーザ素子が発光する発光点から、この放射され
たレーザ光を受光する光電変換装置の受光点までの距離
が大きくなった場合、受光効率が低下する問題がある。However, if the light-receiving surface is flat as in conventional devices, the distance from the light-emitting point of the laser element to the light-receiving point of the photoelectric conversion device that receives the emitted laser light becomes large. In this case, there is a problem that the light receiving efficiency decreases.
更にレーザ素子より放射されるレーザ光の拡がり角度に
より、光電変換装置で受光する光線の受光率が異なり、
レーザ素子より放射されるレーザ光の強さを正確に検知
できない問題が生じる。Furthermore, depending on the spread angle of the laser light emitted from the laser element, the acceptance rate of the light beam received by the photoelectric conversion device differs.
A problem arises in that the intensity of the laser light emitted from the laser element cannot be accurately detected.
そのため、このレーザ素子より放射されるレーザ光の強
度を正確に検知するためには、光を放射するレーザ素子
とその光を受光する光電変換装置の間の距離を正確に定
めてレーザ光の強度を測定する必要があり、その距離の
調整が困難となる。Therefore, in order to accurately detect the intensity of the laser light emitted from this laser element, it is necessary to accurately determine the distance between the laser element that emits the light and the photoelectric conversion device that receives the light, and to detect the intensity of the laser light. must be measured, making it difficult to adjust the distance.
本発明は上記した問題点を解決し、レーザ素子から、拡
がり角度をもって放射されるレーザ光を高効率良く捕ら
え、かつレーザ素子より発光される光の拡がり角度によ
って、受光率が変動しない光電変換装置の提供を目的と
する。The present invention solves the above-mentioned problems and is a photoelectric conversion device that can highly efficiently capture laser light emitted from a laser element with a spread angle, and in which the light receiving rate does not vary depending on the spread angle of the light emitted from the laser element. The purpose is to provide.
第１図に本発明の原理図を示す。 FIG. 1 shows a diagram of the principle of the present invention.
図示するように、本発明の光電変換装置は、発光素子１
１より出射される光を受光して検知する装置であって、
該装置の受光面１２が凹型球面を呈していることを特徴
とする。As shown in the figure, the photoelectric conversion device of the present invention includes a light emitting element 1
This is a device for receiving and detecting light emitted from a light source 1, and is characterized in that a light receiving surface 12 of the device has a concave spherical surface.
本発明の光電変換装置は第１図に示すように、受光面１
２を凹型球面とする。この受光面１２の焦点に半導体レ
ーザ素子のような発光素子１１の発光点を設置すること
で、発光素子１１が受光面１２を見込む、見込角度α以
下であれば、発光素子１１より放射されるレーザ光は総
て受光面１２に捕捉されるため、発光素子１１より出射
されるレーザ光の放射角度が変化しても、受光効率は変
化しない。As shown in FIG. 1, the photoelectric conversion device of the present invention has a light receiving surface 1
2 is a concave spherical surface. By setting the light emitting point of the light emitting element 11 such as a semiconductor laser element at the focal point of the light receiving surface 12, if the light emitting element 11 looks into the light receiving surface 12 and the viewing angle is equal to or less than α, the light emitting element 11 will emit light. Since all of the laser light is captured on the light receiving surface 12, even if the radiation angle of the laser light emitted from the light emitting element 11 changes, the light receiving efficiency does not change.
また発光素子１１より放射されるレーザ光の放射角度が
変化しても、その放射光は球面波となって受光面１２に
垂直に入射しているため、受光効率は変化しない。Further, even if the radiation angle of the laser light emitted from the light emitting element 11 changes, the light receiving efficiency does not change because the emitted light becomes a spherical wave and enters the light receiving surface 12 perpendicularly.
以下、図面を用いて本発明の一実施例につき詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第２図は本発明の光電変換装置の一実施例を示す平面図
で、第３図は第２図のｍ−ｍ ’線に沿った断面図であ
る。FIG. 2 is a plan view showing an embodiment of the photoelectric conversion device of the present invention, and FIG. 3 is a sectional view taken along the line m-m' in FIG.
第２図および第３図に示すように、本発明の光電変換装
置は、凹型球面２１を有し、即ち球を直径にそって切断
し、その切断した球の切り口の周辺部を水平にのばした
構造のステンレスよりなるベース２２上にＮ型のアモル
ファスシリコン層２３、およびＰ型のアモルファスシリ
コン層２４が、プラズマＣＶＤ法により積層形成され、
ＰＮ接合部が形成されている。As shown in FIGS. 2 and 3, the photoelectric conversion device of the present invention has a concave spherical surface 21, that is, a sphere is cut along its diameter, and the periphery of the cut end of the cut sphere is horizontally cut. An N-type amorphous silicon layer 23 and a P-type amorphous silicon layer 24 are laminated by plasma CVD on a base 22 made of stainless steel with an open structure.
A PN junction is formed.
このＰ型アモルファスシリコン層２４の周辺部にはリン
グ状の金電極２５がスパッタ法、およびホトリソグラフ
ィ法を用いて形成されている。A ring-shaped gold electrode 25 is formed around the P-type amorphous silicon layer 24 using sputtering and photolithography.
また図示しないが、Ｐ型のアモルファスシリコン層２４
の上には窒化５ｉｌｌ、或いは酸化シリコン膜がＣＶＤ
法により積層形成され、受光される光の反射防止膜、あ
るいはアモルファスシリコン層２４の表面保護膜として
形成されている。Although not shown, a P-type amorphous silicon layer 24
A 5ill nitride or silicon oxide film is deposited on top of the CVD film.
The amorphous silicon layer 24 is laminated by a method and is formed as an antireflection film for received light or a surface protection film for the amorphous silicon layer 24.
更にステンレス製のベース２２からは、リード線２６が
導出され、更にリング状電極２５からはリード綿２７が
導出されている。Further, a lead wire 26 is led out from the base 22 made of stainless steel, and a lead cotton 27 is led out from the ring-shaped electrode 25.
このようにすれば、球型凹面２１を有するステンレス製
のベース上２２上には、やはり凹型球面を呈するＮ型ア
モルファス９９３７層２３と、Ｐ型アモルファスシリコ
ン層２４とよりなるＰＮ接合部よりなる受光面２日が形
成されているため、発光素子より出射されるレーザ光は
、球面波となって受光面２８に垂直方向に入射されるた
め、受光効率の変動しない高信頼度の光電変換装置が得
られる。In this way, on the stainless steel base 22 having a spherical concave surface 21, there is a light-receiving layer formed of a PN junction consisting of an N-type amorphous 9937 layer 23, which also has a concave spherical surface, and a P-type amorphous silicon layer 24. Since the laser beam emitted from the light-emitting element becomes a spherical wave and enters the light-receiving surface 28 in the perpendicular direction, a highly reliable photoelectric conversion device with no fluctuation in light-receiving efficiency is achieved. can get.
また本発明の他の実施例を第４図に示す。図示するよう
に前記したステンレス製のベース２２上には、Ｎ型アモ
ルファス９９３７層２３、およびＰ型アモルファスシリ
コン層２４が積層形成され、その上には酸化６Ｍ （Ｓ
ｎＯ２）よりなる透明電極層３１がスパッタ法により積
層形成されている。Another embodiment of the present invention is shown in FIG. As shown in the figure, an N-type amorphous 9937 layer 23 and a P-type amorphous silicon layer 24 are laminated on the stainless steel base 22, and oxidized 6M (S
A transparent electrode layer 31 made of (nO2) is laminated by sputtering.
更に透明電極層３１の上には前記したようなリング状の
金電極２５が形成され、金電極２５よりリード線２７と
、ベース２２よりリード線２６が導出されている。Further, a ring-shaped gold electrode 25 as described above is formed on the transparent electrode layer 31, and a lead wire 27 is led out from the gold electrode 25, and a lead wire 26 is led out from the base 22.
また図示しないが、前記したリング状電極２５を形成し
ないで、透明電極３１に直接リード線２７を導出する構
造を採っても良い。Further, although not shown, a structure may be adopted in which the lead wire 27 is led directly to the transparent electrode 31 without forming the ring-shaped electrode 25 described above.
更に第５図は、前記第３図に示した第１の実施例の光電
変換装置をパッケージ４１に設置した状態を示す断面図
で、図示するように、凹型球面を有する光電変換装置が
、直方体形状のパンケージ４１の内部に収容され、その
上には石英ガラス、或いはガラスよりなるウィンドウガ
ラス４２が形成され、その上にはキャンプ４３がパンケ
ージ４１を封止するように設置されている。Furthermore, FIG. 5 is a sectional view showing the photoelectric conversion device of the first embodiment shown in FIG. A window glass 42 made of quartz glass or glass is formed on the pan cage 41, and a camp 43 is installed on top of the window glass 42 to seal the pan cage 41.
またリード線２６．２７から接続された端子４４．４５
が外部へ導出されている。Also, the terminal 44.45 connected from the lead wire 26.27
is extracted to the outside.
尚、本実施例のステンレス製のベースの伯に凹型球面を
有するガラス板に導電性部材を蒸着、またはスパッタ法
で形成し、その上にＮ型、及びＰ型のアモルファＳｉ層
を形成しても良い。Note that a conductive member was formed by vapor deposition or sputtering on a glass plate having a concave spherical surface on the side of the stainless steel base of this example, and N-type and P-type amorphous Si layers were formed thereon. Also good.
以上述べたように、本発明の光電変換装置によれば、受
光面が凹型球面を呈しているので、発光素子より放射さ
れた光の拡がり角度によって受光効率が変動することが
なく、受光効率の安定した光電変換装置が得られる効果
がある。As described above, according to the photoelectric conversion device of the present invention, since the light-receiving surface has a concave spherical surface, the light-receiving efficiency does not vary depending on the spread angle of the light emitted from the light-emitting element. This has the effect of providing a stable photoelectric conversion device.
第１図は本発明の装置の原理図、
第２図は本発明の装置の一実施例を示す平面図、第３図
は第２図のｎｒ−ｍ ’に沿った断面図、第４図は本発
明の他の実施例を示す断面図、第５図は本発明の装置を
パッケージに収容した状態を示す断面図、
第６図は従来の光電変換装置を示す断面図である。
図に於いて、
１１は発光素子、１２は受光面、２１は凹型球面、２２
はベース、２３はＮ型アモルファスシリコン層、２４は
Ｐ型アモルファスシリコン層、２５はリング状電極、２
６．２７はリード線、２８は受光面、３１は透明電極、
４１はパンケージ、４２はウィンドウガラス、４３はキ
ャンプ、４４．４５は端子を示す。
本尭朝イ装置句原理国
第１図
不廃明司裟り才Ｔの先絶例の平面図
第２図
１２２ｒＡｓ）ｆＬ−１（’、”：４セｔ＝３’ａ −
Ｆ ＋ｔ４ｆｏｒ’ｒ丁第３図
オをａシ位り欠説ｆｆＪ６オ１片面図
第４図Fig. 1 is a principle diagram of the device of the present invention, Fig. 2 is a plan view showing an embodiment of the device of the present invention, Fig. 3 is a sectional view taken along nr-m' in Fig. 2, and Fig. 4 5 is a cross-sectional view showing another embodiment of the present invention, FIG. 5 is a cross-sectional view showing the device of the present invention housed in a package, and FIG. 6 is a cross-sectional view showing a conventional photoelectric conversion device. In the figure, 11 is a light emitting element, 12 is a light receiving surface, 21 is a concave spherical surface, and 22
2 is a base, 23 is an N-type amorphous silicon layer, 24 is a P-type amorphous silicon layer, 25 is a ring-shaped electrode, 2
6.27 is a lead wire, 28 is a light receiving surface, 31 is a transparent electrode,
41 is a pan cage, 42 is a window glass, 43 is a camp, and 44.45 is a terminal. Book 122 rAs) fL-1 (', ”: 4 sets t = 3'a -
F + t4for'r-D Figure 3 O a si position missing explanation ff J6 O 1 single-sided diagram Figure 4
Claims (1)
装置であって、 該装置の受光面（１２）が凹型の球面を呈していること
を特徴とする光電変換装置。[Claims] A photoelectric conversion device for receiving and detecting light emitted from a light emitting element (11), characterized in that the light receiving surface (12) of the device has a concave spherical surface. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61086503A JPS62242374A (en) | 1986-04-14 | 1986-04-14 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61086503A JPS62242374A (en) | 1986-04-14 | 1986-04-14 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62242374A true JPS62242374A (en) | 1987-10-22 |
Family
ID=13888781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61086503A Pending JPS62242374A (en) | 1986-04-14 | 1986-04-14 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62242374A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7893460B2 (en) | 2008-02-28 | 2011-02-22 | Mitsubishi Electric Corporation | Semiconductor light detecting element including first and second multilayer light reflective structures sandwiching and contacting a light absorptive layer |
| US11949247B2 (en) | 2019-08-05 | 2024-04-02 | Kyocera Corporation | Powered device and optical transmission system |
-
1986
- 1986-04-14 JP JP61086503A patent/JPS62242374A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7893460B2 (en) | 2008-02-28 | 2011-02-22 | Mitsubishi Electric Corporation | Semiconductor light detecting element including first and second multilayer light reflective structures sandwiching and contacting a light absorptive layer |
| US11949247B2 (en) | 2019-08-05 | 2024-04-02 | Kyocera Corporation | Powered device and optical transmission system |
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