JPS62241329A - Reduction stepper - Google Patents

Reduction stepper

Info

Publication number
JPS62241329A
JPS62241329A JP61083729A JP8372986A JPS62241329A JP S62241329 A JPS62241329 A JP S62241329A JP 61083729 A JP61083729 A JP 61083729A JP 8372986 A JP8372986 A JP 8372986A JP S62241329 A JPS62241329 A JP S62241329A
Authority
JP
Japan
Prior art keywords
reticle
lens
holding part
lenses
base board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61083729A
Other languages
Japanese (ja)
Inventor
Shinsui Saruwatari
新水 猿渡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP61083729A priority Critical patent/JPS62241329A/en
Publication of JPS62241329A publication Critical patent/JPS62241329A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enable a distortion value to be easily and high-precisely corrected, by supporting a reticle or a lens-system holding part on micrometers so that its up-and-down height can be adjusted. CONSTITUTION:A lens system is composed of two reducing projection lenses 2 and 2 which are arranged in a fixed distance on the up-and-down parts, and facing to each other on the upper and lower ends of a cylindrical lens holding part 3. With a collar part 3a of the lens holding part 3 brought in contact with the peripheral upper plane of a base board-mounting hole 5a, the lens holding part 3 is held on the base board 5 so that the lens system is placed just above the wafer stage 8. While main bodies 6a of micrometers 6 are installed vertically to the base board 5 and reticle holding parts 4 are supported to be movable up and down on the spindles 6b which extend from the main bodies 6a, a reticle 1 is set horizontally, paralleling the lenses 2, on the upper plane opening part 4a of the reticle holding part 4. Such up-and-down moving in micron units enables the distortion to be corrected and besides a parallel degree of the lenses and the reticle to be adjusted.

Description

【発明の詳細な説明】 [産業上の利用分野コ 本発明は半導体基板製造プロセス中フォトレジスト塗布
後の目合せ露光工程で使用される縮小投影型露光装置、
特にレンズの歪(ディストーション)を補正する機構に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a reduction projection type exposure apparatus used in an alignment exposure step after coating a photoresist during a semiconductor substrate manufacturing process;
In particular, it relates to a mechanism for correcting lens distortion.

[従来の技術] 従来、縮小投影型露光装置においてレンズディストーシ
ョンの補正を実施する手段としては、レチクル系又はレ
ンズ系保持部を支持させた高さ調整用スペーサーを削っ
てその板厚を変更するか或いは板厚の異なる新たなスペ
ーサーと交換することによりレチクルとレンズ間の距離
を調整するのが一般的であった。
[Prior Art] Conventionally, as a means for correcting lens distortion in a reduction projection exposure apparatus, the thickness of the height adjusting spacer supporting the reticle system or lens system holding part is changed by cutting the spacer. Alternatively, it was common to adjust the distance between the reticle and the lens by replacing the spacer with a new spacer having a different thickness.

[発明が解決しようとする問題点] 上述した従来の縮小投影型露光装置の場合スペーサーを
外して削ったり新品と交換したりしていた為に、削った
時のスペーサーに対するストレスや温度の影響、又新品
と交換した時のなじみの問題等が発生し、スペーサー設
置直後のディストーション値が数日後には変動するとい
う現象が生じていた。さらに修正すべき値が数即という
オーダーである為、かなりの熟練工でなくては作業その
ものが不可能であり、かつ作業にも多大の時間を貸して
いた。
[Problems to be Solved by the Invention] In the case of the above-mentioned conventional reduction projection type exposure apparatus, the spacer was removed and shaved or replaced with a new one, so the effect of stress and temperature on the spacer when it was shaved, In addition, problems with fitting in when replacing the spacer with a new one occurred, and a phenomenon occurred in which the distortion value immediately after the spacer was installed fluctuated several days later. Furthermore, since the number of values to be corrected was on the order of a few, it was impossible for anyone to do the work without a highly skilled worker, and the work required a large amount of time.

本発明の目的はディストーション値の補正を簡単にしか
も高精度に実施可能ならしめた縮小投影型露光装置を提
供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a reduction projection type exposure apparatus that can easily and accurately correct distortion values.

[問題点を解決するための手段] 本発明はレチクルとレンズ系とを相対変位可能に設置し
てなる縮小投影型露光装置において、前記レヂクル或い
はレンズ系の保持部をマイクロメータ上に上下高さを調
整可能に支持させたことを特徴とする縮小投影型露光装
置である。
[Means for Solving the Problems] The present invention provides a reduction projection type exposure apparatus in which a reticle and a lens system are installed such that they can be relatively displaced. This is a reduction projection type exposure apparatus characterized by adjustable support.

[実施例] 以下、本発明の一実施例を図により説明する。[Example] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第1図において、ウェハーステージ8の直上に基台5を
水平に設置し、基台5の中央部の取付孔5aにレンズ系
を上下に向けてセットする。レンズ系は、F下に一定間
隔おけて配設した2個の縮小投影レンズ2.2からなり
、このレンズ2,2は筒状のレンズ保持部3の上下端に
向き合せに取付【プ、レンズ保持部3の鍔部3aを基台
取付孔5aの口縁上面に当接させ該レンズ保持部3を基
台5に支持させることによりレンズ系をウェハーステー
ジ8の直上に設置する。
In FIG. 1, a base 5 is installed horizontally directly above the wafer stage 8, and a lens system is set in the mounting hole 5a in the center of the base 5 so as to face up and down. The lens system consists of two reduction projection lenses 2.2 arranged at a constant interval below F, and these lenses 2.2 are mounted facing each other on the upper and lower ends of a cylindrical lens holding part 3. The lens system is installed directly above the wafer stage 8 by bringing the flange 3a of the lens holder 3 into contact with the upper surface of the mouth of the base mounting hole 5a and supporting the lens holder 3 on the base 5.

一方、マイクロメータ6の本体6aを基台5に垂直に取
付け、本体6aから延びるスピンドル6b上にレチクル
保持部4を上下動可能に支持させ、レチクル保持部4の
上面開口部4aにレチクル1をレンズ2と平行度を保持
して水平にセラi〜する。
On the other hand, the main body 6a of the micrometer 6 is mounted perpendicularly to the base 5, the reticle holder 4 is vertically movably supported on a spindle 6b extending from the main body 6a, and the reticle 1 is inserted into the upper opening 4a of the reticle holder 4. While maintaining parallelism with the lens 2, it is calibrated horizontally.

第1図に示すように、レチクル1とレンズ2との距離を
71に保持したうえで、レチクル1のパターンをレンズ
2に通してウェハー7上に転写されたディストーション
状態が第2図の破線のように理想格子(実線)に対して
膨らんでいると仮定する。今DIS(各点のディストー
ション平均値)一(、Σ (Xi +yi ))/8と
すると、レチクルーとレンズ2との距離ZとDISとの
関係は第3図で示される。
As shown in FIG. 1, the distance between reticle 1 and lens 2 is maintained at 71, and the pattern of reticle 1 is passed through lens 2 and transferred onto wafer 7, resulting in the distortion state shown by the broken line in FIG. Assume that the lattice bulges out relative to the ideal lattice (solid line) as shown in FIG. Now, assuming that DIS (distortion average value at each point) is -(, Σ (Xi +yi))/8, the relationship between the distance Z between the reticule and the lens 2 and DIS is shown in FIG.

DISを理想格子に近づける為にはZ=Z3(第3図)
にすれば良い訳であるから、マイクロメータ6のスピン
ドル6bを(Zl−22)の分だり回動じてミクロン単
位で上昇させ、レチクル保持部4のレチクル1をレンズ
2から遠ざけてレチクル1とレンズ2の間隔を大きくし
、DIS=0となる点を得てディストーションの補正を
行う。
In order to bring DIS closer to the ideal grid, Z = Z3 (Figure 3)
Therefore, the spindle 6b of the micrometer 6 is rotated by (Zl-22) to raise it in micron units, and the reticle 1 of the reticle holder 4 is moved away from the lens 2, so that the reticle 1 and the lens The distortion is corrected by increasing the interval between 2 and obtaining a point where DIS=0.

マイクロメータ6によりレチクル保持部4を支えてこれ
をミクロン単位で上下動させるため、ディストーション
の補正に併せてレンズとレチクルとの平行度を同時に調
整することか可能となる。
Since the reticle holder 4 is supported by the micrometer 6 and moved up and down in micron units, it is possible to simultaneously adjust the parallelism between the lens and the reticle in addition to correcting distortion.

尚、前実施例ではレチクル保持部4をマイクロメータ6
で支えたが、レンズ保持部3をマイクロメータ6で支え
てもよい。
In the previous embodiment, the reticle holder 4 was replaced with a micrometer 6.
Although the lens holding part 3 is supported by a micrometer 6, the lens holding part 3 may be supported by a micrometer 6.

尚本発明の一実施例においてはレンズやレチクル系保持
部を図に示した構造としマイクロメータで直接保持部を
上下動させる方式としたが、本発明の特徴であるレチク
ル又はレンズ系の保持部をマイクロメータを使用して上
下動させる機構を有している限り形状・方法の如何は問
わないものでおる。
In one embodiment of the present invention, the lens or reticle system holder has the structure shown in the figure, and the holder is moved up and down directly using a micrometer. The shape and method do not matter as long as the device has a mechanism for moving it up and down using a micrometer.

[発明の効果] 以上説明した様に本発明はレチクル又はレンズ系保持部
の支持点をマイクロメータで上下させることにより、デ
ィストーション変動時の修正を簡単しかも高精度に実施
でき、しがもディストーション修正時にレンズとレチク
ルとの平行度を併せて修正することができ、作業効率を
向上できる効果を有するものある。
[Effects of the Invention] As explained above, the present invention makes it possible to easily and accurately correct distortion fluctuations by moving the support point of the reticle or lens system holder up and down with a micrometer, and it is possible to correct distortion easily and with high precision. Sometimes, the parallelism between the lens and reticle can be corrected together, which has the effect of improving work efficiency.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す縦断面図、第2図はレ
チクル上のパターンをウニハル上に転写したときのディ
ストーションを示す平面図、第3図はレンズ−レチクル
間距離(Z)とディス1〜−ジョンの関係を示す図であ
る。
Fig. 1 is a longitudinal sectional view showing an embodiment of the present invention, Fig. 2 is a plan view showing distortion when a pattern on a reticle is transferred onto a unihull, and Fig. 3 is a distance between the lens and the reticle (Z). FIG.

Claims (1)

【特許請求の範囲】[Claims] (1)レチクルとレンズ系とを相対変位可能に設置して
なる縮小投影型露光装置において、前記レチクル或いは
レンズ系の保持部をマイクロメータ上に上下高さを調整
可能に支持させたことを特徴とする縮小投影型露光装置
(1) A reduction projection type exposure apparatus in which a reticle and a lens system are installed so as to be relatively displaceable, characterized in that a holder for the reticle or the lens system is supported on a micrometer so that its vertical height can be adjusted. A reduction projection type exposure device.
JP61083729A 1986-04-11 1986-04-11 Reduction stepper Pending JPS62241329A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61083729A JPS62241329A (en) 1986-04-11 1986-04-11 Reduction stepper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61083729A JPS62241329A (en) 1986-04-11 1986-04-11 Reduction stepper

Publications (1)

Publication Number Publication Date
JPS62241329A true JPS62241329A (en) 1987-10-22

Family

ID=13810608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61083729A Pending JPS62241329A (en) 1986-04-11 1986-04-11 Reduction stepper

Country Status (1)

Country Link
JP (1) JPS62241329A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313331A (en) * 1986-07-04 1988-01-20 Hitachi Ltd Reduction projection exposure device
JPH0281019A (en) * 1988-09-19 1990-03-22 Canon Inc Projector device with distortion error correcting means
US6305657B1 (en) 1998-12-10 2001-10-23 Tokyo Seimitsu Co., Ltd. Mechanism for tilting a microscope

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310429A (en) * 1977-02-28 1978-01-30 Mitsubishi Monsanto Chem Film drive unit for projector
JPS60123028A (en) * 1983-12-07 1985-07-01 Hitachi Ltd Exposing device
JPS60148115A (en) * 1984-01-13 1985-08-05 Nec Corp Reducingly projecting exposure device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310429A (en) * 1977-02-28 1978-01-30 Mitsubishi Monsanto Chem Film drive unit for projector
JPS60123028A (en) * 1983-12-07 1985-07-01 Hitachi Ltd Exposing device
JPS60148115A (en) * 1984-01-13 1985-08-05 Nec Corp Reducingly projecting exposure device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313331A (en) * 1986-07-04 1988-01-20 Hitachi Ltd Reduction projection exposure device
JPH0281019A (en) * 1988-09-19 1990-03-22 Canon Inc Projector device with distortion error correcting means
US6305657B1 (en) 1998-12-10 2001-10-23 Tokyo Seimitsu Co., Ltd. Mechanism for tilting a microscope

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