JPS622390B2 - - Google Patents

Info

Publication number
JPS622390B2
JPS622390B2 JP58090204A JP9020483A JPS622390B2 JP S622390 B2 JPS622390 B2 JP S622390B2 JP 58090204 A JP58090204 A JP 58090204A JP 9020483 A JP9020483 A JP 9020483A JP S622390 B2 JPS622390 B2 JP S622390B2
Authority
JP
Japan
Prior art keywords
plate
magnetic
coil
substrate
bubble memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58090204A
Other languages
Japanese (ja)
Other versions
JPS59217285A (en
Inventor
Toshiaki Suketa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58090204A priority Critical patent/JPS59217285A/en
Publication of JPS59217285A publication Critical patent/JPS59217285A/en
Publication of JPS622390B2 publication Critical patent/JPS622390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)

Description

【発明の詳細な説明】 (a) 発明の技術分野 本発明は量産化に適した磁気バブルメモリ装置
の実装構造に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a mounting structure of a magnetic bubble memory device suitable for mass production.

(b) 技術の背景 磁気バブルメモリ装置(以下略してバブルメモ
リ装置)においては磁気バブルメモリチツプ(以
下チツプ)に一様な強さのバイアス磁界を常に印
加しておくために永久磁石が用いられており、磁
気バブル(以下バブル)を転送パターンに沿つて
伝播させるためチツプと水平に回転磁界を加える
構成法がとられている。こゝで回転磁界を発生さ
せるには直交する1対のコイルを用いこれに正弦
波電流又は三角波電流を90度位相をずらせてコイ
ル駆動回路に流す方法が用いられる。こゝでコイ
ルの構造には2個のソレノイドを直交させる方法
と2個の平面コイルを直交させる方法があり、前
者の構造が通常用いられている。すなわちソレノ
イドは磁界面積効率(有効回転磁界面積/コイル
の大きさ)、磁界電流効率(単位電流当りの回転
磁界の強さ)が良い。然しチツプ位置の四方がコ
イルの壁に囲まれているのでチツプの挿入、取出
し、リード線の引出しなどが不便で通常磁気基板
の中央にチツプを固定し基板に設けた切り込みを
用いてXコイルおよびYコイルを挿入固定してい
るが、コイル装着後のチツプ交換は事実上不可能
である。一方後者は互に直交した平面コイルを銅
板のような導体基板と平行に配置した構造であ
り、このような配置にすると映像効果により導体
板の表面に回転磁界を作ることができる。この構
造の特徴はチツプの位置が導体板の表面で四方が
開いているための設計、組立が容易であり、コイ
ルを作る際にプリント配線技術が使われるので量
産が容易であることが挙げられる。本発明は平面
コイルを用いたバブルメモリ装置の構造に関する
ものである。
(b) Background of the technology In magnetic bubble memory devices (hereinafter referred to as bubble memory devices), permanent magnets are used to constantly apply a bias magnetic field of uniform strength to magnetic bubble memory chips (hereinafter referred to as chips). In order to propagate magnetic bubbles (hereinafter referred to as bubbles) along the transfer pattern, a configuration method is used in which a rotating magnetic field is applied horizontally to the chip. In order to generate the rotating magnetic field, a method is used in which a pair of orthogonal coils is used and a sine wave current or triangular wave current is passed through the coil drive circuit with a phase shift of 90 degrees. There are two methods of coil structure: one in which two solenoids are orthogonal to each other, and the other in which two planar coils are orthogonal to each other.The former structure is usually used. That is, the solenoid has good magnetic field area efficiency (effective rotating magnetic field area/coil size) and magnetic field current efficiency (rotating magnetic field strength per unit current). However, since the chip position is surrounded by coil walls on all sides, it is inconvenient to insert and remove the chip, and to draw out the lead wires.Usually, the chip is fixed in the center of the magnetic board and a notch in the board is used to connect the X coil and Although the Y coil is inserted and fixed, it is virtually impossible to replace the tip after the coil is installed. On the other hand, the latter has a structure in which planar coils orthogonal to each other are arranged parallel to a conductive substrate such as a copper plate, and when arranged in this way, a rotating magnetic field can be created on the surface of the conductive plate by an image effect. The characteristics of this structure are that the chip is located on the surface of the conductor plate and is open on all sides, making it easy to design and assemble, and because printed wiring technology is used to make the coil, mass production is easy. . The present invention relates to the structure of a bubble memory device using a planar coil.

(c) 従来技術と問題点 発明者は既に平面コイルを用いたバブルメモリ
装置を提案している(IEEE Transactions on
Magnetics、Vol.Mag―11、no.5 Sept.1975)。第
1図はこの構成を示す従来の断面構造また第2図
はこの斜視図である。すなわち複数個(この場合
4個)のチツプ1は表面が絶縁化された導体基板
2の上に搭載されており、この絶縁皮膜上に形成
されたプリント配線を通じて導体基板2の周辺に
設けられている端子部まで回路接続がなされる。
例えば導体基板2としては銅板を用いこの表面に
二酸化硅素(SiO2)を蒸着するか或はポリイミド
などを被覆して絶縁し、これにプリント配線を施
したものにチツプを接着し相互にボンデイング接
続することによりチツプへの配線接続が行われて
いる。次に導体基板2の上にはXコイル3とYコ
イル4からなる平面コイルが直交して設けられて
いる。こゝで導体基板2はこれらの平面コイルに
対して映像効果を生じていると共に放熱にも寄与
している。すなわち短絡された2次コイルのよう
に働らき実効的なコイルのインダクタンスを減少
させている。次にチツプ1にバイアス磁界を加え
る永久磁石5は鉄板などからなるヨーク6の両側
に設けられており、磁界効率を上げるために設け
られているフエライト板7とによりチツプ1に垂
直磁界を与えている。このような平面コイルを用
いたバブルメモリ装置は高い周波数での使用に適
し、チツプの温度上昇が少くまた誘導ノイズなど
の発生が少い長所をもつているが、第1図および
第2図に示した構造のバブルメモリ装置は量産工
程に適した構造であるとは言い得なかつた。
(c) Prior art and problems The inventor has already proposed a bubble memory device using a planar coil (IEEE Transactions on
Magnetics, Vol.Mag―11, no.5 Sept.1975). FIG. 1 is a conventional cross-sectional structure showing this configuration, and FIG. 2 is a perspective view thereof. That is, a plurality of chips 1 (four in this case) are mounted on a conductive substrate 2 whose surface is insulated, and are provided around the conductive substrate 2 through printed wiring formed on this insulating film. The circuit connection is made to the terminal section where the terminal is located.
For example, a copper plate is used as the conductor substrate 2, silicon dioxide (SiO 2 ) is vapor-deposited on the surface, or polyimide is coated to insulate the plate, and printed wiring is applied to this plate, and chips are bonded to the plate and interconnected by bonding. Wiring connections to the chip are made by doing this. Next, on the conductor substrate 2, planar coils consisting of an X coil 3 and a Y coil 4 are provided orthogonally. Here, the conductive substrate 2 produces an image effect on these planar coils, and also contributes to heat radiation. That is, it acts like a short-circuited secondary coil and reduces the effective coil inductance. Next, permanent magnets 5, which apply a bias magnetic field to the chip 1, are installed on both sides of a yoke 6 made of an iron plate, etc., and a perpendicular magnetic field is applied to the chip 1 by means of ferrite plates 7, which are provided to increase the magnetic field efficiency. There is. Bubble memory devices using such planar coils are suitable for use at high frequencies and have the advantage of reducing chip temperature rise and generating less induction noise. The bubble memory device having the structure shown cannot be said to be suitable for mass production.

(d) 発明の目的 本発明の目的は平面コイルを用いた大量生産に
適するバブルメモリ装置の構造を提供するにあ
る。
(d) Object of the invention The object of the invention is to provide a structure of a bubble memory device using a planar coil and suitable for mass production.

(e) 発明の構成 この本発明の目的は、基板中央部に磁気バブル
メモリチツプ収容用の窓開け部を有し、該窓開け
部を中心として印刷配線が基板外周部のリード端
子まで導出している絶縁基板と、 前記メモリチツプが上面側中央に接着固定さ
れ、且つ該メモリチツプが前記窓開け部内に位置
するように、前記絶縁基板の裏面に固着される非
磁性金属導体板と、 前記絶縁基板の外側表面に形成された凹部に積
層して収容される平面コイルおよび整磁板と、 前記導体板の外側表面に形成された凹部に積層
して収容される永久磁石および整磁板と、 固着された前記絶縁基板と前記導体板のそれぞ
れの凹部に前記平面コイルと前記整磁板および前
記永久磁石と前記整磁板を設けた状態で、その周
囲を覆うシールドケースとを少なくとも具備して
なる磁気バブルメモリデバイスにより達成するこ
とができる。
(e) Structure of the Invention An object of the present invention is to have a window opening for accommodating a magnetic bubble memory chip in the center of the board, and to lead printed wiring from the window opening to lead terminals on the outer periphery of the board. a non-magnetic metal conductor plate fixed to the back surface of the insulating substrate such that the memory chip is adhesively fixed to the center of the upper surface side and the memory chip is located within the window opening; and the insulating substrate a planar coil and a magnetic shunt plate that are stacked and housed in a recess formed on the outer surface of the conductor plate; a permanent magnet and a magnetic shunt plate that are laminated and housed in a recess formed on the outer surface of the conductor plate; The planar coil, the magnetic shunt plate, the permanent magnet, and the magnetic shunt plate are provided in respective recesses of the insulated substrate and the conductive plate, and at least a shield case is provided to cover the surroundings thereof. This can be achieved with a magnetic bubble memory device.

(f) 発明の実施例 第3図は本発明に係る磁気バブルメモリ装置の
実装構造断面図、第4図は製品外観を示す斜視
図、また第5図A〜Gは本メモリ装置の組み立て
工程を説明するための構成品の斜視図である。以
下図面により具体的な実装形態に係る本発明を説
明する。デユアルインライン構造をとるため複数
個のリード端子8を両側に備えたセラミツク基板
9は中央部に角穴10があり、角穴10の周辺部
の段差部11にはボンデイングパツトが設けられ
多層配線により各ボンデイングパツドとリード端
子8とはそれぞれ回路接続されている。またセラ
ミツク基板9の上面は周囲に段差のある凹部12
となつていて、この凹部内部に複数個の薄板(後
述する平面コイルと銅板)が位置決めして装着さ
れる(第5図A)。次にセラミツク基板9の下に
はこれと等面積のアルミニウムダイキヤスで作ら
れた導体板13があり、この導体板13の上面に
は平面コイルの映像効果を生ずるための銅
(Cu)メツキ14が50〜100〔μm〕の厚さに施
されている(第5図B)。また導体板13の下面
には一定の傾斜角をもつ凹部15があつて整磁板
16と永久磁石17とが嵌入される(第5図C)
すなわち導体板13の下面の凹部15はチツプに
ホールド磁界を加えるためホールド磁界印加方向
に数度の傾きをもつてダイキヤストされている。
こゝでセラミツク基板9と導体板13とは密着さ
れハンダペーストなどにより加熱封止される。次
にセラミツク基板9の角穴10を通じて導体板1
3の上の銅メツキ14面にチツプ19がダイボン
デイングされ段差部11に設けてあるボンデイグ
パツドとワイヤボンデイングされる。第5図Dは
この状態を示すものでこの実施例の場合はチツプ
19が4個装着されており、この角穴10の上部
はチツプ19の装着後例えばセラミツクシーラな
どの封止材20で溶着封止することによりチツプ
19はハーメチツクシールされる。次に窓枠構造
12をとるセラミツク基板9の上面凹部に消去コ
イル21、Xコイル22、Yコイル23を構成す
る平面コイルを順次挿入し(第5図E)、更にそ
の上に中央に長方形の角穴24があいた厚さ0.5
〜1〔mm〕の銅板25を挿入し、また角穴24の
部分に等厚のフエライト板26を嵌合させる(第
5図F,G)。ここで銅板25は平面コイル21
〜24の不要部の磁束を短絡してコイルのインダ
クタンスを下げるためであり、またフエライト板
26は平面コイル21〜23のフラツクスキーパ
ーとして働らき交流磁束の外部漏洩を防ぎ渦電流
によるコイルの負荷を低減すると共に更にバイア
ス磁界を効率的に与える効果をもつ。次にこのよ
うにセラミツク基板9を中心として一体化した後
はシールドケース27に格納することによりバブ
ルメモリ装置はでき上る。第4図はシールドケー
ス27に格納し磁気シールドを施した完成体の斜
視図である。
(f) Embodiments of the Invention Fig. 3 is a sectional view of the mounting structure of the magnetic bubble memory device according to the present invention, Fig. 4 is a perspective view showing the external appearance of the product, and Fig. 5 A to G are assembly steps of the memory device. FIG. 2 is a perspective view of components for explaining. DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention according to specific implementation forms will be described below with reference to the drawings. The ceramic substrate 9, which has a plurality of lead terminals 8 on both sides in order to adopt a dual-in-line structure, has a square hole 10 in the center, and bonding pads are provided in the stepped portion 11 around the square hole 10, allowing multilayer wiring to be formed. Each bonding pad and lead terminal 8 are connected to each other in a circuit. Further, the upper surface of the ceramic substrate 9 has a recess 12 with a step around the periphery.
A plurality of thin plates (planar coils and copper plates to be described later) are positioned and mounted inside this recess (FIG. 5A). Next, under the ceramic substrate 9 is a conductor plate 13 made of an aluminum die-cast with the same area as this, and on the upper surface of this conductor plate 13 is a copper (Cu) plating 14 for producing the image effect of a planar coil. is applied to a thickness of 50 to 100 [μm] (Fig. 5B). Furthermore, there is a recess 15 with a certain inclination angle on the lower surface of the conductor plate 13, into which a magnetic field shunt plate 16 and a permanent magnet 17 are inserted (FIG. 5C).
That is, the recess 15 on the lower surface of the conductive plate 13 is die-cast with an inclination of several degrees in the direction of applying the hold magnetic field in order to apply a hold magnetic field to the chip.
The ceramic substrate 9 and the conductor plate 13 are then brought into close contact with each other and sealed by heat using solder paste or the like. Next, the conductor plate 1 is inserted through the square hole 10 of the ceramic substrate 9.
A chip 19 is die-bonded to the copper plating 14 surface on top of the chip 3, and wire-bonded to a bonding pad provided on the stepped portion 11. FIG. 5D shows this state. In this embodiment, four chips 19 are installed, and after the chips 19 are installed, the upper part of the square hole 10 is welded with a sealing material 20 such as a ceramic sealer. By sealing, the chip 19 is hermetically sealed. Next, planar coils constituting the erasing coil 21, the Thickness with square hole 24 0.5
A copper plate 25 of ~1 mm is inserted, and a ferrite plate 26 of the same thickness is fitted into the square hole 24 (FIGS. 5F and G). Here, the copper plate 25 is the planar coil 21
This is to short-circuit the magnetic flux in the unnecessary parts of the coils 21 to 24 to lower the coil inductance, and the ferrite plate 26 also acts as a flux keeper for the planar coils 21 to 23 to prevent external leakage of alternating current magnetic flux and reduce the load on the coils due to eddy currents. This has the effect of reducing the bias magnetic field as well as efficiently applying a bias magnetic field. Next, after being integrated around the ceramic substrate 9 in this way, the bubble memory device is completed by storing it in the shield case 27. FIG. 4 is a perspective view of the completed body stored in a shield case 27 and magnetically shielded.

(g) 発明の効果 本発明に係る実装形態の採用により平面コイル
を駆動コイルとして使用する磁気バブルメモリ装
置の量産化が可能となる。
(g) Effects of the Invention By adopting the mounting form according to the present invention, it becomes possible to mass-produce magnetic bubble memory devices that use planar coils as drive coils.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図と第2図は平面コイルを用いた磁気バブ
ルメモリ装置の従来構造で第1図は正面断面図、
第2図は斜視図、第3図〜第5図は本発明に係る
構造で、第3図は正面断面図、第4図は完成体を
示す斜視図、第5図A〜Gは構成形態を示す斜視
図である。 図において、1,19はチツプ、3,22はX
コイル、4,23はYコイル、5,17は永久磁
石、13は導体板、14は銅メツキ。
Figures 1 and 2 show the conventional structure of a magnetic bubble memory device using a planar coil; Figure 1 is a front sectional view;
Fig. 2 is a perspective view, Figs. 3 to 5 show the structure according to the present invention, Fig. 3 is a front sectional view, Fig. 4 is a perspective view showing the completed body, and Figs. 5 A to G are configurations. FIG. In the figure, 1 and 19 are chips, 3 and 22 are X
Coils, 4 and 23 are Y coils, 5 and 17 are permanent magnets, 13 is a conductive plate, and 14 is copper plating.

Claims (1)

【特許請求の範囲】 1 基板中央部に磁気バブルメモリチツプ収容用
の窓開け部を有し、該窓開け部を中心として印刷
配線が基板外周部のリード端子まで導出している
絶縁基板と、 前記メモリチツプが上面側中央に接着固定さ
れ、且つ該メモリチツプが前記窓開け部内に位置
するように、前記絶縁基板の裏面に固着される非
磁性金属導体板と、 前記絶縁基板の外側表面に形成された凹部に積
層して収容される平面コイルおよび整磁板と、 前記導体板の外側表面に形成された凹部に積層
して収容される永久磁石および整磁板と、 固着された前記絶縁基板と前記導体板のそれぞ
れの凹部に前記平面コイルと前記整磁板および前
記永久磁石と前記整磁板を設けた状態で、その周
囲を覆うシールドケースとを少なくとも具備して
なる磁気バブルメモリデバイス。
[Scope of Claims] 1. An insulating substrate that has a window opening for accommodating a magnetic bubble memory chip in the center of the substrate, and from which printed wiring is led out to lead terminals on the outer periphery of the substrate; a non-magnetic metal conductor plate fixed to the back surface of the insulating substrate so that the memory chip is adhesively fixed to the center of the upper surface side and the memory chip is located in the window opening; and a non-magnetic metal conductor plate formed on the outer surface of the insulating substrate. a planar coil and a magnetic shunt plate that are stacked and housed in a recess formed on the outer surface of the conductor plate; a permanent magnet and a magnetic shunt plate that are laminated and housed in a recess formed on the outer surface of the conductor plate; and the fixed insulating substrate. A magnetic bubble memory device comprising at least a shield case that covers the planar coil, the magnetic shunt plate, the permanent magnet, and the magnetic shunt plate provided in each recess of the conductive plate.
JP58090204A 1983-05-23 1983-05-23 Magnetic bubble memory device Granted JPS59217285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58090204A JPS59217285A (en) 1983-05-23 1983-05-23 Magnetic bubble memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58090204A JPS59217285A (en) 1983-05-23 1983-05-23 Magnetic bubble memory device

Publications (2)

Publication Number Publication Date
JPS59217285A JPS59217285A (en) 1984-12-07
JPS622390B2 true JPS622390B2 (en) 1987-01-19

Family

ID=13991955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58090204A Granted JPS59217285A (en) 1983-05-23 1983-05-23 Magnetic bubble memory device

Country Status (1)

Country Link
JP (1) JPS59217285A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648594B2 (en) * 1985-04-26 1994-06-22 株式会社日立製作所 Method for assembling magnetic bubble memory device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52132746A (en) * 1976-04-30 1977-11-07 Fujitsu Ltd Magnetic bubble unit
JPS52143721A (en) * 1976-05-24 1977-11-30 Ibm Bubble memory package
JPS5368929A (en) * 1976-12-02 1978-06-19 Fujitsu Ltd Magnetic bubble driving device
JPS54156438A (en) * 1978-05-31 1979-12-10 Fujitsu Ltd Magnetic bubble unit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52132746A (en) * 1976-04-30 1977-11-07 Fujitsu Ltd Magnetic bubble unit
JPS52143721A (en) * 1976-05-24 1977-11-30 Ibm Bubble memory package
JPS5368929A (en) * 1976-12-02 1978-06-19 Fujitsu Ltd Magnetic bubble driving device
JPS54156438A (en) * 1978-05-31 1979-12-10 Fujitsu Ltd Magnetic bubble unit

Also Published As

Publication number Publication date
JPS59217285A (en) 1984-12-07

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