JPS62237744A - Cassette containing ic substrate - Google Patents

Cassette containing ic substrate

Info

Publication number
JPS62237744A
JPS62237744A JP8145986A JP8145986A JPS62237744A JP S62237744 A JPS62237744 A JP S62237744A JP 8145986 A JP8145986 A JP 8145986A JP 8145986 A JP8145986 A JP 8145986A JP S62237744 A JPS62237744 A JP S62237744A
Authority
JP
Japan
Prior art keywords
cassette
groove
wafer
angle
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8145986A
Other languages
Japanese (ja)
Inventor
Hiroyuki Tanaka
浩幸 田中
Masato Fujisawa
正人 藤沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8145986A priority Critical patent/JPS62237744A/en
Publication of JPS62237744A publication Critical patent/JPS62237744A/en
Pending legal-status Critical Current

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  • Packaging Frangible Articles (AREA)

Abstract

PURPOSE:To improve the yield as a product of an IC substrate even if a cassette is deformed or an IC substrate is warped by increasing the angle of a V-shaped groove to a specific angle or larger to reduce the contacting area of the groove of the cassette with the substrate and eliminating a scratch on the peripheral end of the substrate. CONSTITUTION:Reference numeral 13 designates a wafer inserted at the peripheral edge into a pair of opposed V-shaped grooves 12. The angle theta of the grooves 12 is 8 deg. or larger. The groove 12 means substantially V shape in the sectional shapes of two opposed oblique surfaces. The angle theta is that formed of the two oblique surfaces cut by a plane perpendicular to the two opposed oblique surfaces. Since the angle theta of the groove 12 is 8 deg. or larger, the angle between the surface of the wafer 13 contained and the oblique surface of the groove becomes larger than that of the conventional one in a cassette 11. Thus, the contacting area of the peripheral end face of the wafer 13 and the oblique surface is reduced to decrease the depthwise width W of the groove 13, e.g., approx. 1mm.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、IC基板を収納するカセットに関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a cassette for storing an IC board.

〔従来の技術〕[Conventional technology]

従来のIC基板収納用カセットとしては、第2図に示す
ウェハ収納用カセツFがある。
As a conventional IC board storage cassette, there is a wafer storage cassette F shown in FIG.

図において1はウェハ収納用カセット、2はこのカセッ
ト1に設けられた互に向かい合う複数対の断面がV字形
のV形溝、3は向かい合う一対のV形溝2に両側端部に
おいて挿入されたウェハである。
In the figure, 1 is a wafer storage cassette, 2 is a plurality of mutually facing V-shaped grooves provided in the cassette 1, each having a V-shaped cross section, and 3 is a cassette inserted into a pair of opposing V-shaped grooves 2 at both ends thereof. It's a wafer.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところが、このような、従来のウェハ収納用力七ツ) 
I VCあっては、■形溝2の角度θが6度36分と可
成りの鋭角になっているため、V形溝2の傾斜面とウェ
ハ3の周表面との接触面積がその溝2の深さ方向の幅W
で約3Mと大きくなり、ウェハ3の周表面にキズが付き
、製品としての歩留まりが悪くなることがあった。また
、カセット1の変形やウェハ3の反りが発生した場合に
は、スリット2とウェハ3の周表面との接触面積がさら
に大きくなり、(上記1隔Wでいえば約8.5鯖にもな
り)これが原因で製品としての歩留まりがさらに悪化す
ることがあった。
However, the conventional wafer storage capacity (7)
In the case of IVC, the angle θ of the ■-shaped groove 2 is a fairly acute angle of 6 degrees and 36 minutes, so the contact area between the inclined surface of the V-shaped groove 2 and the circumferential surface of the wafer 3 is smaller than that of the groove 2. Width W in the depth direction of
The size of the wafer 3 was about 3M, which caused scratches on the peripheral surface of the wafer 3, resulting in poor product yield. Furthermore, if the cassette 1 is deformed or the wafer 3 is warped, the contact area between the slit 2 and the circumferential surface of the wafer 3 becomes even larger (approximately 8.5 mm in terms of 1 interval W). ) This caused the yield of the product to deteriorate even further.

この発明rユ、上記のような問題点を解決するためにな
されたもので、IC基板の製品としての歩留まりを向上
させることのできるIC基板収納用カセットヲ得ること
を目的とする。
This invention was made to solve the above-mentioned problems, and an object of the present invention is to provide a cassette for storing an IC board that can improve the yield of IC board products.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係るIC基板用収納用カセットは、IC基板
がその周端部において挿入される互に向かい合う複数対
のV形溝を有するカセットにおいて、前記V形溝の角度
を8度以上にしたものである。
The cassette for storing IC boards according to the present invention is a cassette having a plurality of pairs of V-shaped grooves facing each other into which the IC boards are inserted at the peripheral edge thereof, and in which the angle of the V-shaped grooves is 8 degrees or more. It is.

〔作 用〕[For production]

この発明におけるV形溝は、その角度?8変以上にして
従来より大きくしたので、このV形溝に収納したIC基
板の表面とV形溝の傾斜面とのなす角度は大きくなる。
What is the angle of the V-shaped groove in this invention? Since it is made larger than the conventional one by making it more than 8, the angle formed between the surface of the IC board housed in this V-shaped groove and the inclined surface of the V-shaped groove becomes large.

このため、xc3板の周1部表面と前記傾斜面との接触
面積は小さくなり、IC基板の周端部表面にキズが付く
おそれは殆んどなくなる。また、カセットの変形やIC
基板の度りが発生した場合でも、上記接触面積は左程大
きくならないので、IC基板の周端部表面におけるキズ
も最小限に抑えられる。
Therefore, the contact area between the peripheral surface of the xc3 plate and the inclined surface becomes small, and there is almost no possibility that the peripheral end surface of the IC board will be scratched. In addition, cassette deformation and IC
Even if the board warps, the contact area does not become as large as shown in the left, so that scratches on the surface of the peripheral edge of the IC board can be minimized.

〔実施例〕〔Example〕

以下、この発明の一実施例を図につい゛C説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図において、11はウェハ収納用カセット、12に
このカセット11シて設けられ互に向かい合う複数対の
V形溝、13は向かい合う一対のV形溝12ごとに周端
部において挿入されだウェハである。上記V形溝12の
角度θは8度以上にしである。ここにいう■形溝12は
、向かい合う2つの傾斜面の断面形状が実質的にV字形
をなしている溝をいう。また、上記角度θは、向がい合
う2つの傾斜面をこれに垂直な面で切断したとき前記2
つの傾斜面がなす角度である。
In FIG. 1, reference numeral 11 denotes a cassette for storing wafers, 12 a plurality of pairs of V-shaped grooves facing each other provided in the cassette 11, and 13 a wafer inserted into each pair of V-shaped grooves 12 at the peripheral end thereof. It is. The angle θ of the V-shaped groove 12 is 8 degrees or more. The ■-shaped groove 12 herein refers to a groove in which the cross-sectional shape of two opposing inclined surfaces is substantially V-shaped. In addition, the above angle θ is the above 2 when two opposing inclined surfaces are cut by a plane perpendicular to these.
It is the angle formed by two inclined planes.

このように、実施例のカセット11は、そのV形溝12
の角度θが8度以上となっているので、収納さ、またウ
ェハ13の表面とV形溝12の傾斜面とのなす角度は、
従来に比べて大きくなる。このため、ウェハ13の周端
部表面と前記傾斜面との接触面積は小さくなり、V形溝
12の深さ方向の幡Wで言えば約1闘と小さくなる。し
たがって、ウェハ13の周端部表面にキズが付くおそれ
は殆んどなくなる。
In this way, the cassette 11 of the embodiment has its V-shaped groove 12
Since the angle θ is 8 degrees or more, the angle between the surface of the wafer 13 and the inclined surface of the V-shaped groove 12 is
It will be larger than before. Therefore, the contact area between the peripheral end surface of the wafer 13 and the inclined surface becomes small, and the height W of the V-shaped groove 12 in the depth direction becomes as small as about 1 inch. Therefore, there is almost no possibility that the peripheral end surface of the wafer 13 will be scratched.

また、仮りに、カセット11の変形やウェハ13の反り
が発生しても、同じ理由で、上記接触面積は左程大きく
ならないので、ウェハ13の周端  一部表面における
キズも最小限に抑えることができる。
Furthermore, even if the cassette 11 is deformed or the wafer 13 is warped, for the same reason, the above-mentioned contact area will not become as large as shown on the left, so scratches on the peripheral and partial surface of the wafer 13 can also be minimized. I can do it.

上記実施例では、ウェハ収納用カセットについて説明し
たが、石英ボードやウェハ移し替え装置等のように、ウ
ェハ収納用カセットと同様の■形溝を有するものであっ
てもよく、上記実施例と同様の効果を奏する。
In the above embodiment, a wafer storage cassette was explained, but it may also be a wafer storage cassette, such as a quartz board or a wafer transfer device, which has a ■-shaped groove similar to the wafer storage cassette. It has the effect of

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば■形溝の角度t6度3
6分から8度以上に広げることによって、カセットのV
形溝とIC基板との接触面積を小さくし、IC基板の周
端部表面にキズが付かないようにするとともに、カセッ
トの変形、IC基板の反りが発生しても■形溝とIC基
板との接触面積が左程大ざくならないようにしたから、
IC基板の製品とじての歩留まりを向上させることがで
きる。
As described above, according to this invention, the angle t of the ■-shaped groove is 6 degrees 3
By widening the cassette to more than 6 to 8 degrees,
The contact area between the groove and the IC board is reduced to prevent scratches on the peripheral edge surface of the IC board, and even if the cassette is deformed or the IC board is warped, the contact area between the groove and the IC board is minimized. Because the contact area of the is not as large as the left,
The yield of IC substrates as products can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の実施例であるつ;ハ収納用カセット
を示し、同図(a)はその斜視図、同図(b)は要部拡
大平面図、第2図は従来のウェハ収納用カセットを示し
、同図(、)はその斜視図、同図伽)は要部拡大平面図
である。 図中、11はウェハ収納用カセット、12はV形114
.13はウェハである。
FIG. 1 shows a wafer storage cassette which is an embodiment of the present invention, FIG. 1A is a perspective view thereof, FIG. Figures 1 and 2 are perspective views, and Figures 3 and 5 are enlarged plan views of the main parts. In the figure, 11 is a wafer storage cassette, 12 is a V-shaped 114
.. 13 is a wafer.

Claims (1)

【特許請求の範囲】[Claims]  IC基板がその周端部において挿入される互に向かい
合う複数対のV形溝を有するカセットにおいて、前記V
形溝の角度を8度以上にしたことを特徴とするIC基板
収納用カセット。
A cassette having a plurality of pairs of V-shaped grooves facing each other into which an IC board is inserted at a peripheral end thereof,
A cassette for storing IC boards, characterized by a shape groove having an angle of 8 degrees or more.
JP8145986A 1986-04-07 1986-04-07 Cassette containing ic substrate Pending JPS62237744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8145986A JPS62237744A (en) 1986-04-07 1986-04-07 Cassette containing ic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8145986A JPS62237744A (en) 1986-04-07 1986-04-07 Cassette containing ic substrate

Publications (1)

Publication Number Publication Date
JPS62237744A true JPS62237744A (en) 1987-10-17

Family

ID=13746983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8145986A Pending JPS62237744A (en) 1986-04-07 1986-04-07 Cassette containing ic substrate

Country Status (1)

Country Link
JP (1) JPS62237744A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7648888B2 (en) * 2001-08-07 2010-01-19 S.O.I.Tec Silicon On Insulator Technologies Apparatus and method for splitting substrates
CN102569139A (en) * 2012-02-24 2012-07-11 中利腾晖光伏科技有限公司 Flower basket for flock preparing of single-crystalline-silicon solar cell

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606504A (en) * 1983-05-18 1985-01-14 マイクロ・グラス・インコ−ポレ−テツド System and method of transporting wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606504A (en) * 1983-05-18 1985-01-14 マイクロ・グラス・インコ−ポレ−テツド System and method of transporting wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7648888B2 (en) * 2001-08-07 2010-01-19 S.O.I.Tec Silicon On Insulator Technologies Apparatus and method for splitting substrates
CN102569139A (en) * 2012-02-24 2012-07-11 中利腾晖光伏科技有限公司 Flower basket for flock preparing of single-crystalline-silicon solar cell

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