JPH1197514A - Structure of wafer support board for wafer surface treating apparatus - Google Patents

Structure of wafer support board for wafer surface treating apparatus

Info

Publication number
JPH1197514A
JPH1197514A JP25900197A JP25900197A JPH1197514A JP H1197514 A JPH1197514 A JP H1197514A JP 25900197 A JP25900197 A JP 25900197A JP 25900197 A JP25900197 A JP 25900197A JP H1197514 A JPH1197514 A JP H1197514A
Authority
JP
Japan
Prior art keywords
wafer
support plate
plate
thickness
recesses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25900197A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Shigenobu
好行 重信
Akira Amano
昭 天野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP25900197A priority Critical patent/JPH1197514A/en
Publication of JPH1197514A publication Critical patent/JPH1197514A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To vacuum-chuck the back side of a wafer in recesses at the surface and backside of a support plate through a vacuum pincette, without increasing the thickness of this plate by offsetting the recess at the surface of the plate from that at the backside thereof. SOLUTION: Recesses 13, 14 are cut into wafer-mounting regions of the surface and backside 11a, 11b of a support plate 11 such that the recesses 13, 14 communicate with one side face 11c of the plate 11 and mutually offset in the plate length direction, resulting in that the depth of only one of the recesses 13, 14 is added to the thickness T of the plate 11 and hence the recesses 13, 14 may be deep at the front and back surfaces 11a, 11b, without increasing the thickness T.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体部品の製造
に際して使用するウエハーの表面に対して酸化膜又は保
護膜の形成等の各種の表面処理を行う表面処理装置にお
いて、前記ウエハーに対する支持板の構造に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment apparatus for performing various surface treatments such as formation of an oxide film or a protective film on the surface of a wafer used in the manufacture of semiconductor components. It is about structure.

【0002】[0002]

【従来の技術】前記したウエハー用表面処理装置は、従
来から良く知られているように、その密封容器内に、平
面状の支持板の複数枚を、互いに平行に並べて設けて、
この各支持板の表裏両面に、ウエハーを密着するように
取付け、この状態で、前記ウエハーの表面に対して各種
の表面処理を施すようにしている。
2. Description of the Related Art As is well known in the art, the above-mentioned surface treatment apparatus for wafers is provided with a plurality of flat support plates arranged in parallel in a sealed container.
A wafer is attached to both sides of each support plate so as to be in close contact with each other, and in this state, various surface treatments are performed on the surface of the wafer.

【0003】この場合において、従来は、図3及び図4
に示すように、支持板1における表裏両面1a,1bの
うちウエハー2を装着する部分に、凹み溝3,4を、当
該凹み溝3,4が支持板1における一側面1cに連通す
るように刻設することにより、前記支持板1の表裏両面
1a,1bにおいて表面処理の終わったウエハー2を、
前記凹み溝3,4内に挿入したピンセットにて支持板1
から取り外すようにしている。
In this case, conventionally, FIG. 3 and FIG.
As shown in FIG. 3, recessed grooves 3 and 4 are formed in portions of front and back surfaces 1a and 1b of the support plate 1 where the wafer 2 is mounted so that the recessed grooves 3 and 4 communicate with one side surface 1c of the support plate 1. By engraving, the wafer 2 having been subjected to the surface treatment on the front and back surfaces 1a and 1b of the support plate 1 is removed.
The support plate 1 is set with tweezers inserted into the concave grooves 3 and 4.
To remove it from.

【0004】[0004]

【発明が解決しようとする課題】しかし、従来の支持板
1においては、この支持板1の表裏両面1a,1bにお
ける凹み溝3,4を、同じ位置に互いに重なるように設
けると言う構成にしているから、この両凹み溝3,4の
深さHをするに支持板1の板厚さTを、前記両凹み溝
3,4の深さHの二倍に適宜寸法Sを加えたものに(T
=2H+S)なる。
However, in the conventional support plate 1, the concave grooves 3 and 4 on the front and back surfaces 1a and 1b of the support plate 1 are provided at the same position so as to overlap each other. Therefore, the thickness T of the support plate 1 is set to a value obtained by adding an appropriate dimension S to twice the depth H of the double recessed grooves 3 and 4 so that the depth H of the two recessed grooves 3 and 4 is set. (T
= 2H + S).

【0005】すなわち、前記支持板1の板厚さTを厚く
すると、その表裏両面1a,1bにおける凹み溝3,4
の深さHを深くすることができる反面、表面処理装置に
おける密封容器内に設けることができる支持板の枚数
が、その板厚さを厚くした分だけ少なくなるから、表面
処理の処理能力の低下を招来することになる。また、前
記支持板1の板厚さTを薄くすると、表面処理装置にお
ける密封容器内に設けることができる支持板の枚数が多
くなって、表面処理の処理能力をアップできるが、その
反面、この支持板1の表裏両面1a,1bにおける凹み
溝3,4の深さHが浅くなって、この両凹み溝3,4内
に、例えば、実開平4−88046号公報及び特開平8
−330388号公報等に記載されている従来周知の真
空式ピンセットを挿入することができず、つまり、ウエ
ハーを、真空式ピンセットにてその裏面側において真空
吸着することができず、このために、表面処理を完了し
たウハエー2を、支持板1の表裏両面1a,1bから取
り外すには、先端をきわめて薄くした手動式のピンセッ
トを挿入し、この手動式のピンセットによってウエハー
2をその表裏両面から挟み付けるようにしければならな
いから、ウエハーの表面に傷を付けたり、金属粉等の粉
塵を付着したりするおそれが大きいと言う問題があっ
た。
[0005] That is, when the plate thickness T of the support plate 1 is increased, the concave grooves 3, 4 on the front and back surfaces 1 a, 1 b are increased.
The depth H can be increased, but the number of support plates that can be provided in the sealed container in the surface treatment apparatus is reduced by the increase in the plate thickness. Will be invited. Further, when the thickness T of the support plate 1 is reduced, the number of support plates that can be provided in the sealed container in the surface treatment apparatus increases, and the processing capability of the surface treatment can be increased. The depth H of the concave grooves 3 and 4 on the front and back surfaces 1a and 1b of the support plate 1 is reduced, and the depths H of the concave grooves 3 and 4 are set in the concave grooves 3 and 4, for example, as disclosed in Japanese Utility Model Laid-Open Publication No.
The conventional vacuum type tweezers described in JP-A-330388 and the like cannot be inserted, that is, the wafer cannot be vacuum-adsorbed on the back side by the vacuum type tweezers. In order to remove the surface-finished wafer 2 from the front and back surfaces 1a and 1b of the support plate 1, hand-operated tweezers having extremely thin tips are inserted, and the wafer 2 is sandwiched between the front and back surfaces by the manual tweezers. However, there is a problem that the surface of the wafer is likely to be scratched or dust such as metal powder is attached.

【0006】本発明は、この問題を解消した支持板の構
造を提供することを技術的課題とするものである。
An object of the present invention is to provide a support plate structure that solves this problem.

【0007】[0007]

【課題を解決するための手段】この技術的課題を達成す
るため本発明は、「ウエハー用表面処理装置における密
封容器内に設けられ、且つ、表裏両面のうちウエハーを
装着する部分に凹み溝を刻設して成る支持板において、
前記支持板の表面における凹み溝と、裏面における凹み
溝とを、これら両凹み溝が互いに重ならないようにずら
せる。」と言う構成にした。
In order to achieve this technical object, the present invention provides a method for forming a concave groove in a portion of a surface treatment apparatus for a wafer, which is provided in a sealed container and which is provided on both front and back sides of the wafer for mounting a wafer. In the engraved support plate,
The concave groove on the front surface and the concave groove on the back surface of the support plate are shifted so that the two concave grooves do not overlap each other. ".

【0008】[0008]

【発明の作用・効果】このように、支持板の表面におけ
る凹み溝と、裏面における凹み溝とを、これら両凹み溝
が互いに重ならないようにずらせたことにより、支持板
の板厚さには、一つの凹み溝の深さが加算されるのみに
なるから、支持板における板厚さを厚くすることなく、
表裏両面における凹み溝の深さを、従来の略二倍程度に
深くすることができるのである。
As described above, the concave groove on the front surface of the support plate and the concave groove on the back surface are shifted so that the two concave grooves do not overlap each other, so that the thickness of the support plate is reduced. Since only the depth of one concave groove is added, without increasing the thickness of the support plate,
The depth of the concave groove on both the front and back surfaces can be made approximately twice as deep as the conventional one.

【0009】従って、本発明によると、支持板の表裏両
面において表面処理を完了したウエハーを、支持板から
取り外すに際して、支持板の板厚さを厚くすることな
く、支持板の表裏両面における凹み溝内に前記した従来
周知の真空式ピンセットを挿入でき、ウエハーの裏面側
を真空式ピンセットにて真空吸着することができるか
ら、処理能力を低下を招来することなく、ウエハーの表
面に傷を付けたり、金属粉等の粉塵を付着したりするお
それを確実に低減できる効果を有する。
Therefore, according to the present invention, when removing a wafer which has been subjected to surface treatment on both the front and back surfaces of the support plate from the support plate, the concave grooves on both the front and back surfaces of the support plate can be provided without increasing the thickness of the support plate. The conventional well-known vacuum tweezers described above can be inserted therein, and the back side of the wafer can be vacuum-sucked with the vacuum tweezers, so that the surface of the wafer can be scratched without lowering the processing capacity. In addition, there is an effect that the possibility of adhering dust such as metal powder can be reliably reduced.

【0010】[0010]

【発明の実施の形態】以下、本発明の実施の形態を、図
1及び図2の図面について説明する。この図において、
符号11は、ウエハー用表面処理装置における密封容器
内に設けられた支持板を示し、この支持板11の表面1
1a及び裏面11bには、ウエハー12が、当該支持板
11の長手方向に方向に沿って適宜間隔の位置に密着す
るように装着されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. In this figure,
Reference numeral 11 denotes a support plate provided in a sealed container in the wafer surface treatment apparatus.
The wafer 12 is mounted on the back surface 1a and the back surface 11b such that the wafer 12 comes into close contact with an appropriate space along the longitudinal direction of the support plate 11.

【0011】なお、符号15は、前記ウエハー12を装
着する場合の位置決めピンであり、各ウエハー12は、
図示しない適宜な手段にて、支持板11に対して密着す
るように装着されている。そして、前記支持板11にお
ける表面11a及び裏面11bのうちウエハー12を装
着する部分に、凹み溝13,14を、当該凹み溝13,
14が支持板11の一側面11cに連通するように刻設
するにおいて、支持板11の表面11aにおける凹み溝
13と、支持板11の裏面11bにおける凹み溝14と
を、これら両凹み溝13,14が互いに重なることがな
いように、支持板11の長手方向に互いにずらせると言
う構成にする。
Reference numeral 15 denotes a positioning pin for mounting the wafer 12, and each wafer 12
It is mounted so as to be in close contact with the support plate 11 by appropriate means (not shown). The recesses 13, 14 are formed in portions of the support plate 11 where the wafer 12 is to be mounted on the front surface 11 a and the back surface 11 b, respectively.
When the groove 14 is engraved so as to communicate with one side surface 11c of the support plate 11, the concave groove 13 on the front surface 11a of the support plate 11 and the concave groove 14 on the back surface 11b of the support plate 11 are formed. The support plates 11 are shifted from each other in the longitudinal direction so as not to overlap with each other.

【0012】このように、支持板11の表面11aにお
ける凹み溝13と、支持板11の裏面11bにおける凹
み溝14とを、これら両凹み溝13,14が互いに重な
ることがないように、支持板11の長手方向に互いにず
らせたことにより、支持板11の板厚さTには、両凹み
溝13,14のうち一つの凹み溝の深さHが加算される
のみになるから、支持板11における板厚さTを厚くす
ることなく、表裏両面11a,11bにおける凹み溝1
3,14の深さHを深くすることができるのである。
As described above, the recessed grooves 13 on the front surface 11a of the support plate 11 and the recessed grooves 14 on the back surface 11b of the support plate 11 are moved so that the two recessed grooves 13, 14 do not overlap each other. 11, the depth H of one of the two concave grooves 13 and 14 is only added to the plate thickness T of the support plate 11. The groove 1 in the front and back surfaces 11a, 11b without increasing the plate thickness T in FIG.
The depth H of 3, 14 can be increased.

【0013】つまり、一般に、前記支持板には、板厚さ
Tが3.2mmの板が使用されるから、その表裏両面に
おける凹み溝を従来のように同じ箇所に重なるように設
けた場合には、表裏両面における凹み溝の深さは、最大
で0.7mmであったから、この凹み溝に、真空式ピン
セットを挿入することができないのであった。これこに
対して、表裏両面11a,11bにおける凹み溝13,
14を、重なることがないように互いにずらせた場合に
は、この両凹み溝13,14の深さを、従来の二倍の
1.5mmにすることができるから、この両凹み溝1
3,14の各々に、真空式ピンセットを挿入することで
き、ウエハー12の裏面側を真空式ピンセットにて真空
吸着することが可能になるのである。
That is, in general, a plate having a thickness T of 3.2 mm is used as the support plate. Therefore, when the concave grooves on both front and back surfaces are provided so as to overlap the same place as in the conventional case, Since the depth of the concave groove on both front and back surfaces was 0.7 mm at the maximum, vacuum tweezers could not be inserted into this concave groove. On the other hand, the concave grooves 13 on the front and back surfaces 11a and 11b,
When the two grooves 14 are shifted from each other so as not to overlap with each other, the depth of the two grooves 13 and 14 can be doubled to 1.5 mm, which is the conventional depth.
Vacuum tweezers can be inserted into each of the wafers 3 and 14, and the back side of the wafer 12 can be vacuum-sucked by the vacuum tweezers.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施形態による支持体を示す斜視図で
ある。
FIG. 1 is a perspective view showing a support according to an embodiment of the present invention.

【図2】図1のII−II視断面図である。FIG. 2 is a sectional view taken along line II-II of FIG.

【図3】従来の支持板を示す斜視図である。FIG. 3 is a perspective view showing a conventional support plate.

【図4】図3のIV−IV視断面図である。FIG. 4 is a sectional view taken along line IV-IV of FIG. 3;

【符号の説明】[Explanation of symbols]

11 支持板 11a 支持板の表面 11b 支持板の裏面 11c 支持板の一側面 12 ウエハー 13,14 凹み溝 REFERENCE SIGNS LIST 11 support plate 11a front surface of support plate 11b back surface of support plate 11c one side surface of support plate 12 wafer 13, 14 concave groove

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】ウエハー用表面処理装置における密封容器
内に設けられ、且つ、表裏両面のうちウエハーを装着す
る部分に凹み溝を刻設して成る支持板において、 前記支持板の表面における凹み溝と、裏面における凹み
溝とを、これら両凹み溝が互いに重ならないようにずら
せたことを特徴とするウエハー用表面処理装置における
ウエハー支持板の構造。
1. A support plate provided in a sealed container in a wafer surface treatment apparatus, wherein a concave groove is engraved in a portion for mounting a wafer on both front and back surfaces, wherein a concave groove on a surface of the support plate is provided. And a concave groove on the back surface of the wafer supporting plate in the wafer surface treating apparatus, wherein the concave grooves are not overlapped with each other.
JP25900197A 1997-09-24 1997-09-24 Structure of wafer support board for wafer surface treating apparatus Pending JPH1197514A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25900197A JPH1197514A (en) 1997-09-24 1997-09-24 Structure of wafer support board for wafer surface treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25900197A JPH1197514A (en) 1997-09-24 1997-09-24 Structure of wafer support board for wafer surface treating apparatus

Publications (1)

Publication Number Publication Date
JPH1197514A true JPH1197514A (en) 1999-04-09

Family

ID=17327984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25900197A Pending JPH1197514A (en) 1997-09-24 1997-09-24 Structure of wafer support board for wafer surface treating apparatus

Country Status (1)

Country Link
JP (1) JPH1197514A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013111358A1 (en) * 2012-01-25 2013-08-01 株式会社島津製作所 Substrate transfer system and substrate transfer method
WO2013179489A1 (en) * 2012-06-01 2013-12-05 株式会社島津製作所 Substrate placing apparatus and substrate placing method
JP2014216383A (en) * 2013-04-23 2014-11-17 株式会社島津製作所 Substrate transfer system and substrate transfer method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013111358A1 (en) * 2012-01-25 2013-08-01 株式会社島津製作所 Substrate transfer system and substrate transfer method
JPWO2013111358A1 (en) * 2012-01-25 2015-05-11 株式会社島津製作所 Substrate transfer system and substrate transfer method
WO2013179489A1 (en) * 2012-06-01 2013-12-05 株式会社島津製作所 Substrate placing apparatus and substrate placing method
JPWO2013179489A1 (en) * 2012-06-01 2016-01-18 株式会社島津製作所 Substrate transfer apparatus and substrate transfer method
JP2014216383A (en) * 2013-04-23 2014-11-17 株式会社島津製作所 Substrate transfer system and substrate transfer method

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