JP2003243356A5

JP2003243356A5 -

Info

Publication number: JP2003243356A5
Application number: JP2002264135A
Authority: JP
Filing date: 2002-09-10
Publication date: 2005-03-17
Anticipated expiration: 2022-09-10

Description

【００１１】
【課題を解決するための手段】
請求項１に記載の半導体装置の製造方法は、半導体基板の一方の表面に半導体素子が形成された半導体装置の製造方法において、半導体基板における半導体素子が形成された面とは反対側の面から研削加工して、半導体基板を所定の厚さにする研削加工工程と、この研削加工工程を実行した後に、半導体基板の反対側の面に対し半導体基板の外周部を残して所定深さまでエッチングして薄くするエッチング工程と、このエッチング工程を実行した後に、半導体基板の反対側の面に電極を形成する電極形成工程とを備えたことを特徴としている。 [0011]
[Means for Solving the Problems]
The method of manufacturing a semiconductor device according to claim 1 is a method of manufacturing a semiconductor device in which a semiconductor element is formed on one surface of a semiconductor substrate, from the side of the semiconductor substrate opposite to the side on which the semiconductor element is formed. After the grinding process for grinding the semiconductor substrate to a predetermined thickness and the grinding process, etching is performed to a predetermined depth leaving the outer peripheral portion of the semiconductor substrate on the opposite surface of the semiconductor substrate. And an electrode forming step of forming an electrode on the opposite surface of the semiconductor substrate after the etching step is performed .

【００１４】
特に、請求項１に記載の発明では、エッチングによって半導体基板の内部を薄く形成しているので、研磨によって薄肉化した場合のようなダメージ層が発生することが防止できる。従って、請求項１に記載するように、エッチング工程後に、半導体基板のエッチング面に電極を形成する場合、基板と電極との接触抵抗を低減することができる。[0014]
In particular, according to the first aspect of the invention, since the inside of the semiconductor substrate is formed thin by etching, it is possible to prevent the occurrence of a damaged layer as in the case of thinning by polishing. Therefore, as described in claim 1 , when an electrode is formed on the etching surface of the semiconductor substrate after the etching step, the contact resistance between the substrate and the electrode can be reduced.

Claims

In a method of manufacturing a semiconductor device in which a semiconductor element is formed on one surface of a semiconductor substrate, grinding is performed from the surface opposite to the one surface of the semiconductor substrate to a predetermined thickness by grinding the semiconductor substrate. A processing step, an etching step of etching and thinning to a predetermined depth leaving the outer peripheral portion of the semiconductor substrate on the opposite surface after the grinding step is performed, and the etching step; And D. an electrode forming step of forming an electrode on the opposite surface of the semiconductor substrate .

In a method of manufacturing a semiconductor device in which a semiconductor element is formed on one surface of a low concentration semiconductor substrate, the semiconductor substrate is ground from a surface opposite to the one surface of the semiconductor substrate to have a predetermined thickness. A grinding process, an etching process for etching and thinning to a predetermined depth leaving the outer peripheral portion of the semiconductor substrate on the opposite surface after the grinding process, and the etching process And a high concentration layer forming step of forming a high concentration layer on the opposite surface of the low concentration semiconductor substrate which has been subjected to the etching later.

In the etching step, in addition to the outer peripheral portion of the semiconductor substrate, etching is performed so that a part of the inner region surrounded by the outer peripheral portion is left thick. 2. The method of manufacturing a semiconductor device according to 2.

4. The method of manufacturing a semiconductor device according to claim 1, wherein the surface roughness of the etching surface is controlled by the etching solution composition used for the etching process in the etching step.

A method of manufacturing a semiconductor device, comprising the step of forming an electrode on the surface opposite to the semiconductor substrate after the high concentration layer forming step according to claim 2 is performed.

The said etching process was performed in the state which provided the protection member in the element formation surface in which the said semiconductor element in the said semiconductor substrate was formed, The manufacturing of the semiconductor device as described in any one of the Claims 1 thru | or 5 characterized by the above-mentioned. Method.

7. The etching process according to any one of claims 1 to 6, characterized in that the thickness of a region thinned by etching in the semiconductor substrate is measured, and the etching is terminated when the thickness becomes a desired thickness. Method of manufacturing a semiconductor device according to claim 1.

The method of manufacturing a semiconductor device according to any one of claims 1 to 7, wherein a thickness of a region thinned by etching in the semiconductor substrate is less than 200 μm.