JPS62231491A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS62231491A
JPS62231491A JP61073224A JP7322486A JPS62231491A JP S62231491 A JPS62231491 A JP S62231491A JP 61073224 A JP61073224 A JP 61073224A JP 7322486 A JP7322486 A JP 7322486A JP S62231491 A JPS62231491 A JP S62231491A
Authority
JP
Japan
Prior art keywords
bit lines
potential
level
memory cell
reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61073224A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0453038B2 (enExample
Inventor
Isao Fukushi
功 福士
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61073224A priority Critical patent/JPS62231491A/ja
Publication of JPS62231491A publication Critical patent/JPS62231491A/ja
Publication of JPH0453038B2 publication Critical patent/JPH0453038B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
JP61073224A 1986-03-31 1986-03-31 半導体記憶装置 Granted JPS62231491A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61073224A JPS62231491A (ja) 1986-03-31 1986-03-31 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61073224A JPS62231491A (ja) 1986-03-31 1986-03-31 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS62231491A true JPS62231491A (ja) 1987-10-12
JPH0453038B2 JPH0453038B2 (enExample) 1992-08-25

Family

ID=13511991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61073224A Granted JPS62231491A (ja) 1986-03-31 1986-03-31 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS62231491A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6151261A (en) * 1997-06-18 2000-11-21 Nec Corporation Current detection type sense amplifier

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658193A (en) * 1979-10-16 1981-05-21 Nec Corp Semiconductor memory device
JPS56117389A (en) * 1980-02-16 1981-09-14 Fujitsu Ltd Static type random access memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658193A (en) * 1979-10-16 1981-05-21 Nec Corp Semiconductor memory device
JPS56117389A (en) * 1980-02-16 1981-09-14 Fujitsu Ltd Static type random access memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6151261A (en) * 1997-06-18 2000-11-21 Nec Corporation Current detection type sense amplifier

Also Published As

Publication number Publication date
JPH0453038B2 (enExample) 1992-08-25

Similar Documents

Publication Publication Date Title
US3949385A (en) D.C. Stable semiconductor memory cell
KR900019038A (ko) 다이나믹형 랜덤억세스메모리
US5587944A (en) High density multistate SRAM and cell
JPS6160517B2 (enExample)
KR950001423B1 (ko) 비트선 구동기와 메모리 회로
JPH02265097A (ja) 半導体メモリ装置
US5022003A (en) Semiconductor memory device
US5528545A (en) Semiconductor memory device
JP2756797B2 (ja) Ｆｅｔセンス・アンプ
JPS6331879B2 (enExample)
US5483183A (en) Bipolar current sense amplifier
KR960013844B1 (ko) 전류전압 변환회로를 갖는 센스회로 및 그 반도체메모리
US4899309A (en) Current sense circuit for a ROM system
JPS5855597B2 (ja) 双安定半導体メモリセル
JPS62231491A (ja) 半導体記憶装置
JPS59124094A (ja) メモリ回路
JPS5813519Y2 (ja) 半導体記憶装置
JPS62132300A (ja) マトリツクスアレイリ−ドオンリメモリ装置
KR100326236B1 (ko) 모스/바이폴라복합트랜지스터를이용한반도체메모리장치의감지증폭기
JPS63108589A (ja) 半導体記憶装置
EP0149403A2 (en) Sense amplifier for static MOS memory
CN114333936B (zh) 非易失性磁性随机存储结构及非易失性磁性随机存储器
JPH01155589A (ja) 半導体記憶装置
JP3176985B2 (ja) 半導体メモリ
JPH0329196A (ja) センス増幅器