JPS62221180A - 分布反射型半導体レ−ザ - Google Patents

分布反射型半導体レ−ザ

Info

Publication number
JPS62221180A
JPS62221180A JP6510886A JP6510886A JPS62221180A JP S62221180 A JPS62221180 A JP S62221180A JP 6510886 A JP6510886 A JP 6510886A JP 6510886 A JP6510886 A JP 6510886A JP S62221180 A JPS62221180 A JP S62221180A
Authority
JP
Japan
Prior art keywords
layer
waveguide layer
semiconductor laser
active
meltback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6510886A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0546993B2 (enrdf_load_stackoverflow
Inventor
Shinzo Suzaki
慎三 須崎
Tsutomu Watanabe
勉 渡辺
Hirokazu Hashimoto
廣和 橋本
Yasuharu Suematsu
末松　安晴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Japan Science and Technology Agency
Tokyo Institute of Technology NUC
Original Assignee
Fujikura Ltd
Research Development Corp of Japan
Tokyo Institute of Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd, Research Development Corp of Japan, Tokyo Institute of Technology NUC filed Critical Fujikura Ltd
Priority to JP6510886A priority Critical patent/JPS62221180A/ja
Publication of JPS62221180A publication Critical patent/JPS62221180A/ja
Publication of JPH0546993B2 publication Critical patent/JPH0546993B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP6510886A 1986-03-24 1986-03-24 分布反射型半導体レ−ザ Granted JPS62221180A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6510886A JPS62221180A (ja) 1986-03-24 1986-03-24 分布反射型半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6510886A JPS62221180A (ja) 1986-03-24 1986-03-24 分布反射型半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS62221180A true JPS62221180A (ja) 1987-09-29
JPH0546993B2 JPH0546993B2 (enrdf_load_stackoverflow) 1993-07-15

Family

ID=13277371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6510886A Granted JPS62221180A (ja) 1986-03-24 1986-03-24 分布反射型半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS62221180A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0546993B2 (enrdf_load_stackoverflow) 1993-07-15

Similar Documents

Publication Publication Date Title
US4757510A (en) Semiconductor laser device
KR19990045620A (ko) 반도체 레이저 장치
JPS62221180A (ja) 分布反射型半導体レ−ザ
JPS6114787A (ja) 分布帰還型半導体レ−ザ
JPH07202320A (ja) 半導体レーザ素子
JPS59145590A (ja) 半導体レ−ザ装置
JPS59130492A (ja) 半導体レ−ザ装置およびその製造方法
JPH05110197A (ja) 半導体レーザ
JPS596588A (ja) 半導体レ−ザ
JP3025322B2 (ja) 光導波路
JPH05110199A (ja) 半導体レーザ素子
JPH065970A (ja) 分布帰還型半導体レーザ
JPS6323382A (ja) 分布反射型半導体レ−ザの製造方法
JPS60198886A (ja) 半導体レ−ザ
JPS62155583A (ja) 半導体発光装置
JPH04229682A (ja) 半導体レーザの製造方法
JPS61139084A (ja) 半導体装置の製造方法
JPH07122813A (ja) 半導体レーザの製造方法
JPS61210688A (ja) Ｄｆｂ型レ−ザの構造
JPS62221178A (ja) 分布反射型半導体レ−ザおよびその製造方法
JPS60189982A (ja) 埋め込み構造半導体レ−ザ−
JPS63156381A (ja) 半導体発光装置
JPS63169090A (ja) 分布反射型半導体レ−ザ
JPH1012920A (ja) スーパールミネッセントダイオードおよびその製造方法
JPH01309393A (ja) 半導体レーザ装置及びその製造方法

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term