JPS62216637A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS62216637A
JPS62216637A JP6139586A JP6139586A JPS62216637A JP S62216637 A JPS62216637 A JP S62216637A JP 6139586 A JP6139586 A JP 6139586A JP 6139586 A JP6139586 A JP 6139586A JP S62216637 A JPS62216637 A JP S62216637A
Authority
JP
Japan
Prior art keywords
cathode
plasma
anode
etching
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6139586A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0525536B2 (enExample
Inventor
Tatsuo Asamaki
麻蒔　立男
Kiyoshi Hoshino
星野　清
Katsuzo Ukai
鵜飼　勝三
Yoichi Ino
伊野　洋一
Toshio Adachi
安達　俊男
Tsutomu Tsukada
勉 塚田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP6139586A priority Critical patent/JPS62216637A/ja
Priority to JP61239765A priority patent/JP2613377B2/ja
Publication of JPS62216637A publication Critical patent/JPS62216637A/ja
Publication of JPH0525536B2 publication Critical patent/JPH0525536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
JP6139586A 1986-03-19 1986-03-19 プラズマ処理装置 Granted JPS62216637A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6139586A JPS62216637A (ja) 1986-03-19 1986-03-19 プラズマ処理装置
JP61239765A JP2613377B2 (ja) 1986-03-19 1986-10-08 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6139586A JPS62216637A (ja) 1986-03-19 1986-03-19 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61239765A Division JP2613377B2 (ja) 1986-03-19 1986-10-08 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS62216637A true JPS62216637A (ja) 1987-09-24
JPH0525536B2 JPH0525536B2 (enExample) 1993-04-13

Family

ID=13169922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6139586A Granted JPS62216637A (ja) 1986-03-19 1986-03-19 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS62216637A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149965A (ja) * 1987-12-07 1989-06-13 Hitachi Ltd プラズマ反応装置
JPH02164441A (ja) * 1988-12-19 1990-06-25 Teru Kyushu Kk オゾン発生方法およびこれを用いたアッシング方法
JPH05335244A (ja) * 1992-05-29 1993-12-17 Anelva Corp アモルファスシリコン薄膜の成膜方法
JP2006024633A (ja) * 2004-07-06 2006-01-26 Sharp Corp プラズマ処理方法およびプラグ形成方法
JP2006506521A (ja) * 2002-11-14 2006-02-23 ゾンド， インコーポレイテッド 高蒸着速度スパッタリング
US8125155B2 (en) 2004-02-22 2012-02-28 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105627A (en) * 1980-01-28 1981-08-22 Fuji Photo Film Co Ltd Manufacture of amorphous semiconductor
JPS60215777A (ja) * 1984-03-03 1985-10-29 エステイ−シ−　ピ−エルシ− 表面処理方法
JPS61213221A (ja) * 1985-03-19 1986-09-22 Japan Synthetic Rubber Co Ltd プラズマ重合膜の製法
JPS62103371A (ja) * 1985-10-30 1987-05-13 Hitachi Ltd プラズマ化学蒸着法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105627A (en) * 1980-01-28 1981-08-22 Fuji Photo Film Co Ltd Manufacture of amorphous semiconductor
JPS60215777A (ja) * 1984-03-03 1985-10-29 エステイ−シ−　ピ−エルシ− 表面処理方法
JPS61213221A (ja) * 1985-03-19 1986-09-22 Japan Synthetic Rubber Co Ltd プラズマ重合膜の製法
JPS62103371A (ja) * 1985-10-30 1987-05-13 Hitachi Ltd プラズマ化学蒸着法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149965A (ja) * 1987-12-07 1989-06-13 Hitachi Ltd プラズマ反応装置
JPH02164441A (ja) * 1988-12-19 1990-06-25 Teru Kyushu Kk オゾン発生方法およびこれを用いたアッシング方法
JPH05335244A (ja) * 1992-05-29 1993-12-17 Anelva Corp アモルファスシリコン薄膜の成膜方法
JP2006506521A (ja) * 2002-11-14 2006-02-23 ゾンド， インコーポレイテッド 高蒸着速度スパッタリング
US7811421B2 (en) 2002-11-14 2010-10-12 Zond, Inc. High deposition rate sputtering
US8125155B2 (en) 2004-02-22 2012-02-28 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
JP2006024633A (ja) * 2004-07-06 2006-01-26 Sharp Corp プラズマ処理方法およびプラグ形成方法

Also Published As

Publication number Publication date
JPH0525536B2 (enExample) 1993-04-13

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term