JPS62209856A - Field-effect transistor using silicon carbide - Google Patents
Field-effect transistor using silicon carbideInfo
- Publication number
- JPS62209856A JPS62209856A JP5232186A JP5232186A JPS62209856A JP S62209856 A JPS62209856 A JP S62209856A JP 5232186 A JP5232186 A JP 5232186A JP 5232186 A JP5232186 A JP 5232186A JP S62209856 A JPS62209856 A JP S62209856A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- type
- gate electrode
- effect transistor
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 9
- 230000005669 field effect Effects 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 3
- 239000010931 gold Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 8
- 238000000137 annealing Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 abstract 1
- 229910000027 potassium carbonate Inorganic materials 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- MGDOJPNDRJNJBK-UHFFFAOYSA-N ethylaluminum Chemical compound [Al].C[CH2] MGDOJPNDRJNJBK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、炭化けい素を用いた耐熱性に優れた電界効
果トランジスタに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a field effect transistor using silicon carbide and having excellent heat resistance.
従来、ｎ型３Ｃ炭化けい素（Ｓ ｉ Ｃ）のオーミック
電極としてはニッケル（Ｎｉ）を真空蒸着し、真空巾約
１０００℃で焼鈍する方法が行われてきた。Conventionally, as an ohmic electrode of n-type 3C silicon carbide (S i C), a method has been used in which nickel (Ni) is vacuum-deposited and annealed at a vacuum width of about 1000°C.
また金（Ａｕ）はＳ ｉ Ｃ’に対して良好なショット
キー電極となることが知られているじ５ｃｈｏｔｔｋｙ
ｂａｒｒｉｅｒ ｄｉｏｄｅｓ ｏｎ ３Ｃ−３ｉＣ″
吉田貞史他ＡｐｐｌｉｅｄＰｈｙｓｉｃｓ Ｌｅｔｔｅ
ｒｓ旦、 ７６６ （１９８５）参照）。Furthermore, gold (Au) is known to be a good Schottky electrode for SiC'.
barrier diodes on 3C-3iC''
Sadafumi Yoshida et al. Applied Physics Lette
RS Dan, 766 (1985)).
しかし、Ａｕｆ４極はＮ１Ｔ４極の焼鈍温度である１０
００℃の高温には耐えられないという問題点があった。However, the Auf4 pole has an annealing temperature of 10, which is the annealing temperature of the N1T4 pole.
There was a problem that it could not withstand high temperatures of 00°C.
この発明は、上記の問題点を解決するためになされたも
ので、耐熱性に優れたオーミック電極を有する炭化けい
素を用いた電界効果トランジスタを得ることを目的とす
る。The present invention was made to solve the above problems, and an object of the present invention is to obtain a field effect transistor using silicon carbide having an ohmic electrode with excellent heat resistance.
この発明にかかる炭化けい素を用いた電界効果トランジ
スタは、ソース電極およびドレイン電極をＡｚ材料で構
成し、ゲート電極をＡｕ材料で構成したものである。A field effect transistor using silicon carbide according to the present invention has a source electrode and a drain electrode made of an Az material, and a gate electrode made of an Au material.
この発明は、ソース電極およびドレイン電極をＡ２材料
で構成してオーミック電極としたので、高温の熱処理を
必要とせず良好なオーミック接触が得られる。In this invention, since the source electrode and the drain electrode are made of A2 material to form ohmic electrodes, good ohmic contact can be obtained without requiring high-temperature heat treatment.
第１図〜第４図はこの発明の一実施例の工程を示す断面
略図である。1 to 4 are schematic cross-sectional views showing the steps of an embodiment of the present invention.
まず、第１図に示すように、ｐ型シリコン基板１の上に
ンランとプロパン反応ガスを用いる化学気相成長法によ
り３Ｃ−３ｉＣ単結晶層をエピタキシャル成長させる。First, as shown in FIG. 1, a 3C-3iC single crystal layer is epitaxially grown on a p-type silicon substrate 1 by chemical vapor deposition using nitrogen and a propane reaction gas.
成長中）・リエチルアルミニウム（ＴＥＡ）を導入して
厚さ約１μｍのｐ型３Ｃ−３ｉＣ単結晶層を得る。During growth) ethyl aluminum (TEA) is introduced to obtain a p-type 3C-3iC single crystal layer with a thickness of about 1 μm.
次に、第２図に示すように、ＴＥＡの導入をやめ、ノン
ドープのｎ型３Ｃ−８ｉＣ単結晶層３を厚さ約３０００
人エピタキシャル成長させる。Next, as shown in FIG. 2, the introduction of TEA was stopped, and a non-doped n-type 3C-8iC single crystal layer 3 was formed to a thickness of approximately 3000 mm.
who grow epitaxially.
次いで、第３図に示すように、ｎ型３Ｃ−３ｉＣ単結晶
層３の表面を５％ＨＦ、２０％Ｋ ２ＣＯ、。Next, as shown in FIG. 3, the surface of the n-type 3C-3iC single crystal layer 3 was treated with 5% HF and 20% K2CO.
ＨＣ乏、５％ＨＦで順次エツチングした後、Ａ！を真空
蒸着してソース電極４．ドレイン電極５を形成し、さら
に、Ａｕを真空蒸着してゲート電極６を形成する。After sequentially etching with HC-poor and 5% HF, A! Vacuum evaporate the source electrode 4. A drain electrode 5 is formed, and then Au is vacuum deposited to form a gate electrode 6.
最後に、第４図に示すようにエツチングにより分離領域
７を形成しＭＥＳＦＥ栄とする。Finally, as shown in FIG. 4, isolation regions 7 are formed by etching to form the MESFE layer.
ところで、Ａ乏はＳｉＣのｐ型不純物であり、Ａｅ−３
ｉ合金がｐ型ＳｉＣに対するオーミック電極として用い
られてきた。一方、ｎ型３Ｃ−３ｉＣの電極には上述し
たようにオーミック電極にはＮ１材料が、ゲート電極６
にはＡｕ材料が用いられてきた。By the way, A deficiency is a p-type impurity of SiC, and Ae-3
i-alloys have been used as ohmic electrodes for p-type SiC. On the other hand, in the n-type 3C-3iC electrode, as mentioned above, the ohmic electrode is made of N1 material, and the gate electrode 6 is made of N1 material.
Au material has been used.
ところが、ｎ型３ＣＳｉＣにＡＪ２材料を室温で蒸着す
ると良好なオーミック性を保つことが判明し、上述した
ようにこの発明は完成したものである。However, it was found that good ohmic properties were maintained when AJ2 material was deposited on n-type 3CSiC at room temperature, and the present invention was completed as described above.
この発明は以上説明したように、ｎ型３Ｃ−３ＩＣを用
いた電界効果トランジスタにおいて、ソース電極および
ドレイン電極をＡβ材料で構成し、ゲート電極をＡｕ材
料で構成したので、ソース電極およびドし・イン電極は
従来のように高温処理により焼鈍することなく良好なオ
ーミック接触が得られるので、ゲート電極を損傷するこ
とがなく、製造工程上非常に有利である。このようにｎ
型３Ｃ−３ｉＣを用いた電界効果トランジスタを焼鈍プ
ロセスなしに簡便に作製できるので集積化への利用が大
きく期待されるものである。As explained above, in a field effect transistor using an n-type 3C-3IC, this invention has a source electrode and a drain electrode made of an Aβ material, and a gate electrode made of an Au material. Since the in-electrode can obtain good ohmic contact without being annealed by high-temperature treatment as in the conventional method, the gate electrode is not damaged, which is very advantageous in terms of the manufacturing process. Like this n
Since a field effect transistor using type 3C-3iC can be easily manufactured without an annealing process, it is highly expected to be used for integration.
第１図〜第４図はこの発明の一実施例の製造工程を示す
断面略図である。
図中、１はｐ型シリコン基板、２はｐ型３Ｃ−３ｉＣ単
結晶層、３はｎ型３Ｃ−８ｉＣ単結晶層、４はソース電
極、５はドレイン電極、６はゲート第１図
第２図
第３図
第４図1 to 4 are schematic cross-sectional views showing the manufacturing process of an embodiment of the present invention. In the figure, 1 is a p-type silicon substrate, 2 is a p-type 3C-3iC single crystal layer, 3 is an n-type 3C-8iC single crystal layer, 4 is a source electrode, 5 is a drain electrode, 6 is a gate. Figure 3 Figure 4
Claims (1)
いて、ソース電極およびドレイン電極をアルミニウム材
料で構成し、ゲート電極を金材料で構成したことを特徴
とする炭化けい素を用いた電界効果トランジスタ。A field effect transistor using n-type 3C silicon carbide, characterized in that a source electrode and a drain electrode are made of an aluminum material, and a gate electrode is made of a gold material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61052321A JP2675994B2 (en) | 1986-03-10 | 1986-03-10 | Field effect transistor using silicon carbide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61052321A JP2675994B2 (en) | 1986-03-10 | 1986-03-10 | Field effect transistor using silicon carbide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62209856A true JPS62209856A (en) | 1987-09-16 |
| JP2675994B2 JP2675994B2 (en) | 1997-11-12 |
Family
ID=12911526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61052321A Expired - Lifetime JP2675994B2 (en) | 1986-03-10 | 1986-03-10 | Field effect transistor using silicon carbide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2675994B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63276273A (en) * | 1987-05-07 | 1988-11-14 | Sharp Corp | Silicon carbide semiconductor element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4826067A (en) * | 1971-08-06 | 1973-04-05 |
-
1986
- 1986-03-10 JP JP61052321A patent/JP2675994B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4826067A (en) * | 1971-08-06 | 1973-04-05 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63276273A (en) * | 1987-05-07 | 1988-11-14 | Sharp Corp | Silicon carbide semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2675994B2 (en) | 1997-11-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |