JP2000150417A - Method for heat-treating silicon carbide semiconductor and manufacture thereof - Google Patents
Method for heat-treating silicon carbide semiconductor and manufacture thereofInfo
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- JP2000150417A JP2000150417A JP32025798A JP32025798A JP2000150417A JP 2000150417 A JP2000150417 A JP 2000150417A JP 32025798 A JP32025798 A JP 32025798A JP 32025798 A JP32025798 A JP 32025798A JP 2000150417 A JP2000150417 A JP 2000150417A
- Authority
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- Prior art keywords
- heat treatment
- silicon carbide
- epitaxial layer
- gas
- nitrogen gas
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、炭化珪素（Ｓｉ
Ｃ）半導体の熱処理方法、特に、炭化珪素（ＳｉＣ）半
導体への電極形成方法に用いて好適な炭化珪素（Ｓｉ
Ｃ）半導体の熱処理方法に関するものである。TECHNICAL FIELD The present invention relates to a silicon carbide (Si)
C) Silicon carbide (Si) suitable for use in a heat treatment method for a semiconductor, particularly a method for forming an electrode on a silicon carbide (SiC) semiconductor.
C) The present invention relates to a heat treatment method for a semiconductor.
【０００２】[0002]
【従来の技術】発光ダイオードや半導体レーザ等の光半
導体素子材料として開発が進んでいる炭化珪素（Ｓｉ
Ｃ）半導体は、熱的、科学的に安定であり、耐放射線性
に優れていることから、耐環境デバイスや高出力デバイ
スの材料として注目を集めている。2. Description of the Related Art Silicon carbide (Si), which is being developed as a material for optical semiconductor devices such as light emitting diodes and semiconductor lasers, is being developed.
C) Semiconductors are attracting attention as materials for environment-resistant devices and high-output devices because semiconductors are thermally and scientifically stable and have excellent radiation resistance.
【０００３】また、ＳｉＣ半導体はＧａＡｓ半導体に比
べて、電子移動度が約２倍から３倍大きいことから、高
周波半導体素子材料としても開発が行われている。[0003] SiC semiconductors are being developed as high-frequency semiconductor device materials because their electron mobility is about two to three times greater than that of GaAs semiconductors.
【０００４】従来、ＳｉＣ半導体へのオーミック電極
は、オーミック電極となる金属膜をＳｉＣ半導体層上に
形成した後、高温の熱処理を施して、オーミック性を取
るようにしている。例えば、ｎ型ＳｉＣのオーミック電
極としてＮｉ（ニッケル）電極を形成する場合、Ｎｉ膜
を電子ビーム技術によって蒸着した後、フォトリソグラ
フィ技術及びＮｉ膜のケミカルエッチング技術によって
パターンニングする。そして、その後に、例えば、Ａｒ
ガスを用いて１０００℃で１０分の熱処理（アニール）
を行って、Ｎｉオーミック電極を形成する方法が用いら
れている。Conventionally, an ohmic electrode for a SiC semiconductor is formed by forming a metal film to be an ohmic electrode on the SiC semiconductor layer and then performing a high-temperature heat treatment to obtain an ohmic property. For example, when a Ni (nickel) electrode is formed as an n-type SiC ohmic electrode, a Ni film is deposited by an electron beam technique, and then patterned by a photolithography technique and a chemical etching technique of the Ni film. Then, for example, Ar
Heat treatment at 1000 ° C for 10 minutes using gas (annealing)
To form a Ni ohmic electrode.
【０００５】かかる従来のオーミック電極の形成方法に
よると、不純物濃度が５×１０17ｃｍ-3程度のｎ型Ｓｉ
Ｃ半導体に安定してＮｉオーミック電極を形成する場
合、Ａｒガス中で１１００℃で５分程度の熱処理を施す
ことが必要となる。[0005] according According to a conventional method of forming ohmic electrode, an impurity concentration of about 5 × 10 17 cm -3 of n-type Si
In order to stably form a Ni ohmic electrode on a C semiconductor, it is necessary to perform a heat treatment at 1100 ° C. for about 5 minutes in Ar gas.
【０００６】このような場合、ＮｉのＳｉＣ半導体中へ
の拡散深さが約１μｍ程度となるため、例えば、ｐｎ接
合深さが０．２μｍ程度からなる、ｎ型ＳｉＣエピタキ
シャル層とｐ型ＳｉＣエピタキシャル層とｎ型ＳｉＣ型
基板からなるデバイスにおいては、ｎ型ＳｉＣエピタキ
シャル層へオーミック電極を形成することが不可能にな
る等の問題が生じる。In such a case, since the diffusion depth of Ni into the SiC semiconductor is about 1 μm, for example, an n-type SiC epitaxial layer and a p-type SiC epitaxial layer having a pn junction depth of about 0.2 μm. In a device consisting of a layer and an n-type SiC substrate, there arise problems such as the inability to form an ohmic electrode on the n-type SiC epitaxial layer.
【０００７】また、従来の熱処理方法では、オーミック
特性の再現性が得られないこともしばしば発生してい
た。Further, in the conventional heat treatment method, reproducibility of ohmic characteristics cannot often be obtained.
【０００８】一方、前述したように、ＳｉＣ半導体は、
電子移動度がＧａＡｓ半導体に比べて大きい。しかしな
がら、結晶欠陥はＧａＡｓ半導体に比べて２桁ほど多
く、半導体特性を考えると更なる結晶性の向上が望まれ
ている。On the other hand, as described above, the SiC semiconductor is
The electron mobility is higher than that of a GaAs semiconductor. However, crystal defects are about two orders of magnitude larger than GaAs semiconductors, and further improvement in crystallinity is desired in view of semiconductor characteristics.
【０００９】[0009]
【発明が解決しようとする課題】この発明は、かかる従
来のオーミック電極形成条件の高温熱処理から生じる問
題やオーミック特性の再現性が得られない等の問題点を
解決することを目的とするものである。SUMMARY OF THE INVENTION An object of the present invention is to solve the problems caused by the conventional high-temperature heat treatment of the ohmic electrode forming conditions and the problem that the reproducibility of the ohmic characteristics cannot be obtained. is there.
【００１０】[0010]
【課題を解決するための手段】この発明は、炭化珪素半
導体を窒素ガス中若しくは窒素ガスを主成分とする混合
ガス中で熱処理を施すことを特徴とする。The present invention is characterized in that a silicon carbide semiconductor is heat-treated in nitrogen gas or a mixed gas containing nitrogen gas as a main component.
【００１１】上記熱処理は２００℃以上の温度で行えば
よい。The heat treatment may be performed at a temperature of 200 ° C. or higher.
【００１２】ＳｉＣのフォトルミネッセンス（ＰＬ）信
号強度から、Ｎ2 ガス中で熱処理を施すと、結晶性の向
上もしくは不純物の活性化（キャリア化）の向上が図れ
ることがわかる。From the photoluminescence (PL) signal intensity of SiC, it can be seen that when heat treatment is performed in N 2 gas, the crystallinity can be improved or the activation of impurities (transformation into carriers) can be improved.
【００１３】また、この発明は、炭化珪素半導体上にオ
ーミック電極用金属を形成した後、窒素ガス中若しくは
窒素ガスを主成分とする混合ガス中で熱処理を施し、オ
ーミック接触をとることを特徴とする。Further, the present invention is characterized in that after forming a metal for an ohmic electrode on a silicon carbide semiconductor, a heat treatment is performed in a nitrogen gas or a mixed gas containing nitrogen gas as a main component to make ohmic contact. I do.
【００１４】更に、この発明は、炭化珪素半導体上にソ
ース、ドレイン用金属膜を形成し、窒素ガス中若しくは
窒素ガスを主成分とする混合ガス中で熱処理を施して、
オーミック接触を形成後、炭化珪素半導体上にショット
キー電極を形成することを特徴とする。Further, according to the present invention, a metal film for source and drain is formed on a silicon carbide semiconductor, and is subjected to a heat treatment in a nitrogen gas or a mixed gas containing nitrogen gas as a main component.
After forming the ohmic contact, a Schottky electrode is formed on the silicon carbide semiconductor.
【００１５】ＳｉＣのフォトルミネッセンス（ＰＬ）信
号強度から、Ｎ2 ガス中で熱処理を施すと、結晶性の向
上もしくは不純物の活性化（キャリア化）の向上のよう
な現象が確認され、これらのことが作用することで、オ
ーミック電極の形成条件の低温化や特性の再現性向上等
が図れる。From the photoluminescence (PL) signal intensity of SiC, when heat treatment is performed in N 2 gas, phenomena such as improvement of crystallinity or improvement of impurity activation (carrier conversion) are confirmed. Acts to lower the ohmic electrode formation conditions and improve the reproducibility of characteristics.
【００１６】[0016]
【発明の実施の形態】以下、この発明の実施の形態につ
き図面を参照して説明する。図１は、オーミック電極の
特性を測定するために用いた試料構造を示す断面図であ
る。また、図２及び図３は、この発明による熱処理方法
によって得られたオーミック電極の特性と従来方法によ
って得られたオーミック電極の特性とを比較した電圧−
電流特性図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a sample structure used for measuring characteristics of an ohmic electrode. FIGS. 2 and 3 show a voltage-comparison between the characteristics of the ohmic electrode obtained by the heat treatment method according to the present invention and the characteristics of the ohmic electrode obtained by the conventional method.
It is a current characteristic diagram.
【００１７】図１に示すように、ｎ型ＳｉＣ半導体基板
１上にｐ型ＳｉＣエピタキシャル層２及びｎ型ＳｉＣエ
ピタキシャル層３が設けられ、このｎ型ＳｉＣエピタキ
シャル層３上にＮｉ膜を電子ビーム技術によって蒸着し
た後、フォトリソグラフィ技術及びＮｉ膜のケミカルエ
ッチング技術によってパターンニングして、Ｎｉ電極
４、４を形成する。その後熱処理を施して、測定針５を
両電極につけ、電流を流して、電流−電圧特性を測定し
た。As shown in FIG. 1, a p-type SiC epitaxial layer 2 and an n-type SiC epitaxial layer 3 are provided on an n-type SiC semiconductor substrate 1, and a Ni film is formed on the n-type SiC epitaxial layer 3 by an electron beam technique. After that, Ni electrodes 4 and 4 are formed by patterning using a photolithography technique and a chemical etching technique for the Ni film. After that, a heat treatment was performed, the measuring needle 5 was attached to both electrodes, a current was passed, and current-voltage characteristics were measured.
【００１８】図２は、キャリア濃度が５×１０17ｃｍ-3
のｎ型ＳｉＣエピタキシャル層３上に電子ビーム蒸着に
よって膜厚４０００オングストロームのＮｉ膜を形成し
た後、１０００℃で５分間の熱処理をそれぞれＮ2 （窒
素）ガス中及びＡｒ（アルゴン）ガス中で行い、オーミ
ック特性を測定した結果を示す。なお、ガス流量はいず
れも１．０Ｌ／分である。FIG. 2 shows that the carrier concentration is 5 × 10 17 cm -3.
After forming a 4000 Å thick Ni film on the n-type SiC epitaxial layer 3 by electron beam evaporation, heat treatment is performed at 1000 ° C. for 5 minutes in N 2 (nitrogen) gas and Ar (argon) gas, respectively. And the results of measurement of ohmic characteristics. The gas flow rate was 1.0 L / min.
【００１９】図２において、ａはＮ2 ガス中で熱処理し
たものであり、ｂはＡｒガス中で熱処理したものであ
る。In FIG. 2, a is a result of heat treatment in N 2 gas, and b is a result of heat treatment in Ar gas.
【００２０】この図２から明らかなように、Ａｒガス中
で熱処理した場合には非オーミック特性を示しているの
に対して、Ｎ2 ガス中で熱処理した場合には完全なオー
ミック特性を示していることが分かる。As is clear from FIG. 2, when heat treatment is performed in Ar gas, non-ohmic characteristics are exhibited, whereas when heat treatment is performed in N 2 gas, complete ohmic characteristics are exhibited. You can see that there is.
【００２１】図３は、キャリア濃度が１×１０18ｃｍ-3
のｎ型ＳｉＣエピタキシャル層３上に電子ビーム蒸着に
よって膜厚４０００オングストロームのＮｉ膜を形成し
た後、９００℃で５分間の熱処理をそれぞれＮ2 ガス中
及びＡｒガス中で行い、オーミック特性を測定した結果
を示す。なお、ガス流量はいずれも１．０Ｌ／分であ
る。FIG. 3 shows that the carrier concentration is 1 × 10 18 cm −3.
After forming a 4000 Å thick Ni film on the n-type SiC epitaxial layer 3 by electron beam evaporation, heat treatment was performed at 900 ° C. for 5 minutes in N 2 gas and Ar gas, respectively, to measure ohmic characteristics. The results are shown. The gas flow rate was 1.0 L / min.
【００２２】図３において、ａはＮ2 ガス中で熱処理し
たものであり、ｂはＡｒガス中で熱処理したものであ
る。In FIG. 3, a is the result of heat treatment in N 2 gas, and b is the result of heat treatment in Ar gas.
【００２３】この図３から明らかなように、Ａｒガス中
で熱処理した場合には非オーミック特性を示しているの
に対して、Ｎ2 ガス中で熱処理した場合には完全なオー
ミック特性を示していることが分かる。As is apparent from FIG. 3, when heat treatment is performed in Ar gas, non-ohmic characteristics are exhibited, whereas when heat treatment is performed in N 2 gas, complete ohmic characteristics are exhibited. You can see that there is.
【００２４】上記したこの発明の実施の形態から明らか
なように、オーミック電極形成の熱処理をＮ2 ガス中で
行うことにより、安定してオーミック電極を形成できる
とともに、熱処理温度の低下が可能になる。As is apparent from the above embodiment of the present invention, by performing the heat treatment for forming the ohmic electrode in N 2 gas, the ohmic electrode can be formed stably and the heat treatment temperature can be lowered. .
【００２５】また、熱処理時間の短縮も可能になること
から、浅いｐｎ接合を有するＳｉＣ半導体素子でのオー
ミック電極形成が極めて容易となる。Further, since the heat treatment time can be shortened, it is extremely easy to form an ohmic electrode in a SiC semiconductor device having a shallow pn junction.
【００２６】次に、上記した熱処理によりＳｉＣ半導体
の結晶性の向上、不純物の活性化（キャリア化）の向上
をもたらしていることを確認するために、フォトルミネ
ッセンス（ＰＬ）強度を測定した。Next, the photoluminescence (PL) intensity was measured in order to confirm that the above-mentioned heat treatment improved the crystallinity of the SiC semiconductor and improved the activation (carrier conversion) of the impurities.
【００２７】測定は、エピタキシャル成長層を形成した
ＳｉＣ半導体ウェハをＮ2 ガス中で７００℃、５分間の
熱処理を施したサンプルと、熱処理を施していないサン
プルとを用意し、それぞれのフォトルミネッセンス（Ｐ
Ｌ）強度を測定した。その結果を図４に示す。In the measurement, a sample obtained by subjecting a SiC semiconductor wafer on which an epitaxial growth layer is formed to a heat treatment at 700 ° C. for 5 minutes in an N 2 gas and a sample not subjected to a heat treatment are prepared, and the respective photoluminescence (P
L) The strength was measured. FIG. 4 shows the results.
【００２８】図４より、ディープレベルからの発光と思
われる５７０ｎｍ付近の信号強度は熱処理を施したもの
と施していないものとは殆ど変化が見られないのに対し
て、バンド端発光と思われる４２５ｎｍ付近の信号強度
は熱処理を施したものが非常に強くなっていることが分
かる。この結果、Ｎ2 ガス中で７００℃、５分間の熱処
理を施したものが、ＳｉＣ半導体の結晶性の向上、不純
物の活性化（キャリア化）の向上をもたらしていること
が分かる。FIG. 4 shows that the signal intensity around 570 nm, which is considered to be light emission from the deep level, hardly changes between the signal after heat treatment and the signal without heat treatment, whereas the signal intensity seems to be band edge light emission. It can be seen that the signal intensity around 425 nm is very strong after heat treatment. As a result, it can be seen that the heat treatment performed at 700 ° C. for 5 minutes in N 2 gas improves the crystallinity of the SiC semiconductor and the activation (carrier conversion) of impurities.
【００２９】次に、熱処理条件によって、ＰＬ信号強度
がどのように変化しているかを調べた。その結果を表１
に示す。ディープレベルからの発光と思われる５７０ｎ
ｍ付近の信号強度に対するバンド端発光と思われる４２
５ｎｍ付近の信号強度の比率で表したのがＰＬ強度比で
ある。Next, it was examined how the PL signal intensity changed depending on the heat treatment conditions. Table 1 shows the results.
Shown in 570n which seems to be light emission from deep level
It is considered to be band edge emission for a signal intensity around m42.
The PL intensity ratio is represented by the ratio of the signal intensity around 5 nm.
【００３０】[0030]
【表１】 [Table 1]
【００３１】表１からＮ2 ガス中で熱処理した場合は、
２００℃からＰＬ強度比が大きくなり、８００℃程度で
平衡になる。これに対して、Ａｒガス中での熱処理の場
合は、１１００℃でも熱処理無しのサンプルと殆ど変わ
らないことが分かる。From Table 1, when heat-treated in N 2 gas,
The PL intensity ratio increases from 200 ° C. and becomes equilibrium at about 800 ° C. On the other hand, it can be seen that the heat treatment in Ar gas is almost the same as the sample without heat treatment even at 1100 ° C.
【００３２】表１から、ＳｉＣ半導体の結晶性の向上並
びに不純物の活性化（キャリア化）の向上させるために
は、Ｎ2 ガス中で２００℃以上の熱処理を行えばよいこ
とが分かる。From Table 1, it can be seen that in order to improve the crystallinity of the SiC semiconductor and the activation of impurities (to form a carrier), a heat treatment at 200 ° C. or more in N 2 gas may be performed.
【００３３】以上の結果から、Ｎ2 ガス中で熱処理によ
って、結晶性の向上やドーピング不純物の活性化率の向
上などをもたらすことができると考えることができる。From the above results, it can be considered that the heat treatment in the N 2 gas can improve the crystallinity and the activation rate of the doping impurities.
【００３４】次に、ＳｉＣ半導体装置において、Ｎ2 ガ
スの熱処理を行って好適な例につき図５以下に従い説明
する。Next, a preferred example of performing heat treatment with N 2 gas in the SiC semiconductor device will be described with reference to FIG.
【００３５】まず、ＳｉＣ電界効果型トランジスタ（Ｓ
ｉＣＭＥＳＦＥＴ）の製造にこの発明を適用した場合を
図５の工程図に従い説明する。First, a SiC field effect transistor (S
A case in which the present invention is applied to the manufacture of (iCMESFET) will be described with reference to the process chart of FIG.
【００３６】まず、図５（ａ）に示すように、ｎ型Ｓｉ
Ｃ基板１０の主面に膜厚５．０μｍ程度のｐ型ＳｉＣエ
ピタキシャル層１１、膜厚０．２μｍ程度のｎ型ＳｉＣ
エピタキシャル層１２が順次形成される。このウェハの
主面にＲＩＥ選択用マスクを形成し、ＲＩＥ法によりｐ
型ＳｉＣエピタキシャル層１１に到達する用にメサエッ
チングを施す。First, as shown in FIG.
A p-type SiC epitaxial layer 11 having a thickness of about 5.0 μm on the main surface of a C substrate 10, and an n-type SiC having a thickness of about 0.2 μm
Epitaxial layers 12 are sequentially formed. An RIE selection mask is formed on the main surface of this wafer, and p is formed by RIE.
Mesa etching is performed to reach the type SiC epitaxial layer 11.
【００３７】次いで、図５（ｂ）に示すように、ＲＩＥ
選択用マスクを除去し、ｎ型ＳｉＣエピタキシャル層１
２上に３０００オングストロームの厚さでＮｉ膜を蒸着
して、パターニングした後、Ｎ2 ガス雰囲気中で、１０
００℃、５分間の熱処理を施す。この熱処理により、Ｎ
ｉ膜はオーミック接触が得られ、Ｎｉオーミック電極か
らなるソース、ドレイン電極１３、１３が形成される。
また、このＮ2 ガス雰囲気中での熱処理により、ＳｉＣ
半導体は結晶性及び不純物の活性率が向上される。Next, as shown in FIG.
After removing the selection mask, the n-type SiC epitaxial layer 1 is removed.
2 by depositing a Ni film with a thickness of 3000 angstroms on, after patterning, in an N 2 gas atmosphere, 10
Heat treatment is performed at 00 ° C. for 5 minutes. By this heat treatment, N
Ohmic contact is obtained with the i film, and source and drain electrodes 13 and 13 composed of a Ni ohmic electrode are formed.
The heat treatment in the N 2 gas atmosphere causes SiC
Semiconductors have improved crystallinity and impurity activation rates.
【００３８】尚、結晶性等向上のための熱処理は、上記
オーミック電極形成の際の熱処理と兼用しても、或いは
ウェハ状態で行っても良い。結晶性等向上のためのＮ2
ガス雰囲気中における熱処理は、前述したように、８０
０℃で平衡するので、結晶性等向上だけを目的とする場
合には、８００℃以下の温度で熱処理を行えばよい。た
だ、オーミック性を得るためには、やはり１０００℃前
後の温度で熱処理を行う方が好ましい。The heat treatment for improving the crystallinity and the like may be used together with the heat treatment for forming the ohmic electrode, or may be performed in a wafer state. N 2 for improving crystallinity etc.
The heat treatment in the gas atmosphere is performed at 80
Since the equilibrium is achieved at 0 ° C., the heat treatment may be performed at a temperature of 800 ° C. or less in order to improve the crystallinity only. However, in order to obtain ohmic properties, it is preferable to perform the heat treatment at a temperature of about 1000 ° C.
【００３９】続いて、図５（ｃ）に示すように、リフト
オフ技術を用いてＰｔからなるショットキ接合を有する
ゲート電極１４が形成される。このゲート電極は、Ｎ2
ガス雰囲気中での熱処理により、ＳｉＣ半導体表面が結
晶性及び不純物の活性率が向上されているので、安定に
形成され、ＦＥＴ特性が向上する。Subsequently, as shown in FIG. 5C, a gate electrode 14 having a Schottky junction made of Pt is formed by using a lift-off technique. This gate electrode is N 2
The heat treatment in a gas atmosphere improves the crystallinity and impurity activity of the SiC semiconductor surface, so that the surface is formed stably and FET characteristics are improved.
【００４０】尚、ウェハ状態での熱処理とオーミック電
極形成時の熱処理を重ねて行っても同様の効果が得られ
る。The same effect can be obtained by repeating the heat treatment in the wafer state and the heat treatment for forming the ohmic electrode.
【００４１】次に、ＦＥＴ特性の向上につき図６に従い
説明する。例えば、図６に示すように、ｎ型ＳｉＣ基板
１０の主面にｐ型ＳｉＣエピタキシャル層１１、ｎ型Ｓ
ｉＣエピタキシャル層１２が順次形成されたウェハに、
ＦＥＴのソース、ドレイン領域を形成するために、窒素
（Ｎ）をイオン注入し、イオン注入領域１５を形成す
る。そして、イオン注入領域１５を活性化するために、
Ｎ2 ガス雰囲気中で２００℃以上の温度で熱処理を施
す。このＮ2 ガス雰囲気中で熱処理により、イオン注入
領域の結晶性の回復が良くなり、また、不純物の活性化
が向上するために、ＦＥＴ特性の向上が図れる。Next, the improvement of the FET characteristics will be described with reference to FIG. For example, as shown in FIG. 6, a p-type SiC epitaxial layer 11 and an n-type S
On the wafer on which the iC epitaxial layer 12 is sequentially formed,
In order to form source and drain regions of the FET, nitrogen (N) is ion-implanted to form an ion-implanted region 15. Then, in order to activate the ion implantation region 15,
Heat treatment is performed at a temperature of 200 ° C. or higher in an N 2 gas atmosphere. By the heat treatment in the N 2 gas atmosphere, the recovery of the crystallinity of the ion-implanted region is improved, and the activation of impurities is improved, so that the FET characteristics can be improved.
【００４２】次に、ＳｉＣ発光ダイオードにつき図７に
従い説明する。図７（ａ）に示すように、ｎ型ＳｉＣ半
導体基板２０の一主面に膜厚１．０μｍ程度のｎ型Ｓｉ
Ｃエピタキシャル層２１、膜厚０．３μｍ程度のｐ型エ
ピタキシャル層２２を順次形成する。このウェハ状態で
Ｎ2 ガス雰囲気中の熱処理を行う。結晶性等向上のため
の熱処理は、前述したように、８００℃で平衡するの
で、結晶性等向上だけを目的とする場合には、８００℃
以下の温度で熱処理を行なえばよい。Next, the SiC light emitting diode will be described with reference to FIG. As shown in FIG. 7A, an n-type SiC semiconductor substrate 20 having a thickness of about 1.0 μm is formed on one main surface thereof.
A C epitaxial layer 21 and a p-type epitaxial layer 22 having a thickness of about 0.3 μm are sequentially formed. Heat treatment in an N 2 gas atmosphere is performed in this wafer state. As described above, the heat treatment for improving the crystallinity and the like equilibrates at 800 ° C.
The heat treatment may be performed at the following temperature.
【００４３】続いて、図７（ｂ）に示すように、ｐ型電
極として、ｐ型エピタキシャル層２２上に、Ａｌ電極２
３を設け、ｎ型ＳｉＣ半導体基板１の他主面にＮｉ電極
２４設け、熱処理（アロイ）して発光ダイオードを得
る。Subsequently, as shown in FIG. 7B, an Al electrode 2 is formed on the p-type epitaxial layer 22 as a p-type electrode.
3, a Ni electrode 24 is provided on the other main surface of the n-type SiC semiconductor substrate 1, and a heat treatment (alloy) is performed to obtain a light emitting diode.
【００４４】上記したように、この発明により製造した
ＳｉＣ発光ダイオードは、ＦＥＴの場合と同様に、Ｎ2
ガス雰囲気中の熱処理の効果により、ＬＥＤの発光効率
が改善されて、高輝度化が図れる。As described above, the SiC light-emitting diode manufactured according to the present invention has N 2
Due to the effect of the heat treatment in the gas atmosphere, the luminous efficiency of the LED is improved, and higher luminance can be achieved.
【００４５】次に、ＳｉＣバイポーラトランジスタにつ
き図８に従い説明する。図８に示すように、ｎ型ＳｉＣ
半導体基板３０をＮ2 ガス雰囲気中の熱処理を行う。結
晶性等向上のための熱処理は、前述したように、８００
℃で平衡するので、結晶性等向上だけを目的とする場合
には、８００℃以下の温度で熱処理を行なえばよい。Next, the SiC bipolar transistor will be described with reference to FIG. As shown in FIG. 8, n-type SiC
The semiconductor substrate 30 is subjected to a heat treatment in an N 2 gas atmosphere. The heat treatment for improving the crystallinity and the like is performed at 800
Since it equilibrates at ℃, if only the improvement of the crystallinity etc. is intended, the heat treatment may be performed at a temperature of 800 ℃ or less.
【００４６】その後ｎ型ＳｉＣ半導体基板３０一主面に
膜厚１．０μｍ程度のベース層となるｐ型ＳｉＣエピタ
キシャル層３１を形成し、Ｎ2 ガス雰囲気中の熱処理を
行う。続いて、ｐ型ＳｉＣエピタキシャル層３１上に膜
厚０．３μｍ程度のエミッタ層となるｎ+ 型エピタキシ
ャル層３２を形成し、Ｎ2 ガス雰囲気中の熱処理を行
う。このＮ2 ガス雰囲気中の熱処理は、基板の熱処理と
同様に８００℃以下の温度で行なえばよい。Thereafter, a p-type SiC epitaxial layer 31 serving as a base layer having a thickness of about 1.0 μm is formed on one main surface of the n-type SiC semiconductor substrate 30, and heat treatment is performed in an N 2 gas atmosphere. Subsequently, an n + -type epitaxial layer 32 serving as an emitter layer having a thickness of about 0.3 μm is formed on the p-type SiC epitaxial layer 31, and a heat treatment is performed in an N 2 gas atmosphere. This heat treatment in the N 2 gas atmosphere may be performed at a temperature of 800 ° C. or less, similarly to the heat treatment of the substrate.
【００４７】続いて、ベース層まで届くメサエッチング
を施した後、ＳｉＯ2 からなる絶縁層３３を設け、この
絶縁層３３のベース領域とエミッタ領域にそれぞれ窓部
を形成し、ｐ型ＳｉＣエピタキシャル層３１にＡｌから
なるベース電極３４を、ｎ+型エピタキシャル層上にＮ
ｉからなるエミッタ電極３５を、ｎ型ＳｉＣ半導体基板
３０の他主面側にＮｉからなるコレクタ電極３６を形成
する。その後、アロイすることによりＳｉＣバイポーラ
トランジスタを得る。Subsequently, after performing mesa etching reaching the base layer, an insulating layer 33 made of SiO 2 is provided, windows are formed in the base region and the emitter region of the insulating layer 33, and the p-type SiC epitaxial layer is formed. the base electrode 34 made of Al in 31, n on the n + -type epitaxial layer
An emitter electrode 35 made of i is formed on the other main surface side of the n-type SiC semiconductor substrate 30, and a collector electrode 36 made of Ni is formed. Thereafter, alloying is performed to obtain a SiC bipolar transistor.
【００４８】上記したように、ｎ型ＳｉＣ半導体基板３
０をＮ2 ガス雰囲気中で熱処理を行った後に、ｐ型Ｓｉ
Ｃエピタキシャル層３１形成し、この層を成形してＮ2
ガス雰囲気中で熱処理を行った後に、ｎ+ 型エピタキシ
ャル層３２を形成し、Ｎ2 ガス雰囲気中で熱処理を行っ
た後に、ＳｉＯ2 膜及び電極形成を行う。このように製
造することで、各層間の結晶欠陥の低減や表面準位の低
減が可能となり、トランジスタ特性の向上が図れる。As described above, the n-type SiC semiconductor substrate 3
0 is heat-treated in an N 2 gas atmosphere, and then p-type Si
A C epitaxial layer 31 is formed, and this layer is shaped into N 2
After performing the heat treatment in a gas atmosphere, the n + -type epitaxial layer 32 is formed, and after performing the heat treatment in an N 2 gas atmosphere, an SiO 2 film and an electrode are formed. By manufacturing in this way, it is possible to reduce crystal defects between the layers and to reduce the surface state, thereby improving the transistor characteristics.
【００４９】ＳｉＣＭＯＳＦＥＴの製造にこの発明を適
用した場合を示す図９に従い説明する。FIG. 9 shows a case where the present invention is applied to the manufacture of a SiCMOSFET.
【００５０】図９に示すように、ｎ型ＳｉＣ基板４０の
主面に膜厚５．０μｍ程度のｐ型ＳｉＣエピタキシャル
層４１が形成される。そして、ＦＥＴのソース、ドレイ
ン領域を形成するために、窒素（Ｎ）をイオン注入し、
ソース、ドレイン領域４２、４２を形成する。As shown in FIG. 9, a p-type SiC epitaxial layer 41 having a thickness of about 5.0 μm is formed on the main surface of n-type SiC substrate 40. Then, nitrogen (N) is ion-implanted to form source and drain regions of the FET.
Source and drain regions 42 are formed.
【００５１】次いで、ｐ型ＳｉＣエピタキシャル層４１
上に３０００オングストロームの厚さでＮｉ膜を蒸着し
て、パターニングし、ソース、ドレイン領域４２、４２
上にソース、ドレイン電極４３、４３を形成した後、Ｎ
2 ガス雰囲気中で、１０００℃、５分間の熱処理を施
す。この熱処理により、Ｎｉ膜はオーミック接触が得ら
れ、Ｎｉオーミック電極からなるソース、ドレイン電極
４３、４３が形成される。また、このＮ2 ガス雰囲気中
での熱処理により、イオン注入領域の結晶性の回復がさ
れ、ＳｉＣ半導体は結晶性の向上や不純物の活性率が向
上される。Next, the p-type SiC epitaxial layer 41
A Ni film having a thickness of 3000 angstroms is deposited thereon and patterned, and the source and drain regions 42 and 42 are formed.
After the source and drain electrodes 43 and 43 are formed thereon,
Heat treatment is performed at 1000 ° C. for 5 minutes in a 2 gas atmosphere. By this heat treatment, an ohmic contact is obtained with the Ni film, and the source and drain electrodes 43, 43 made of a Ni ohmic electrode are formed. In addition, the heat treatment in the N 2 gas atmosphere restores the crystallinity of the ion-implanted region, thereby improving the crystallinity and the impurity activity of the SiC semiconductor.
【００５２】尚、イオン注入領域の結晶性の回復のため
の熱処理は、上記したように、オーミック電極形成の際
の熱処理に兼用しても、或いはイオン注入後、電極形成
前にＮ2 ガス雰囲気中の熱処理を行っても良い。結晶性
の回復及び結晶性の向上等のための熱処理は、前述した
ように、８００℃で平衡するので、結晶性等の向上だけ
を目的とする場合には、８００℃以下の温度で熱処理を
行っても良い。ただ、オーミック性を得るためには、や
はり１０００℃前後の温度で熱処理を行う方が好まし
い。[0052] Note that heat treatment for recovery of crystallinity of the ion-implanted region, as described above, be used also to heat treatment in the ohmic electrode formation, or after ion implantation, N 2 gas atmosphere before electrode formation A middle heat treatment may be performed. As described above, the heat treatment for recovering the crystallinity and improving the crystallinity is equilibrated at 800 ° C. As described above, the heat treatment is performed at a temperature of 800 ° C. or less for the purpose of improving the crystallinity only. You may go. However, in order to obtain ohmic properties, it is preferable to perform the heat treatment at a temperature of about 1000 ° C.
【００５３】続いて、ＳｉＯ2 膜からなるゲート絶縁膜
４４を形成し、このゲート絶縁膜４４上にＡｌからなる
ゲート電極４５が形成される。Subsequently, a gate insulating film 44 made of a SiO 2 film is formed, and a gate electrode 45 made of Al is formed on the gate insulating film 44.
【００５４】尚、結晶性等向上のために、ｐ型ＳｉＣエ
ピタキシャル層４１形成後に、Ｎ2ガス雰囲気中の熱処
理を行っていてもよい。In order to improve the crystallinity and the like, a heat treatment in an N 2 gas atmosphere may be performed after the formation of the p-type SiC epitaxial layer 41.
【００５５】上記したように、ｐ型ＳｉＣエピタキシャ
ル層４１形成後、或いはイオン注入後及び、ソース・ド
レイン電極４３、４３形成時の熱処理によりトランジス
タ特性の向上が図れる。As described above, the transistor characteristics can be improved by the heat treatment after the formation of the p-type SiC epitaxial layer 41 or after the ion implantation and when the source / drain electrodes 43 and 43 are formed.
【００５６】次に、ＳｉＣ光センサーにつき図１０に従
い説明する。Next, the SiC optical sensor will be described with reference to FIG.
【００５７】図１０に示すように、ｐ型ＳｉＣ半導体基
板５０の一主面に膜厚１．０μｍ程度のｐ型ＳｉＣエピ
タキシャル層５１、膜厚２０００オングストローム以下
のｎ + 型エピタキシャル層５２を順次形成する。このウ
ェハ状態でＮ2 ガス雰囲気中の熱処理を行っても良い。
結晶性等向上のための熱処理は、前述したように、８０
０℃で平衡するので、結晶性向上だけを目的とする場合
には、８００℃以下の温度で熱処理を行なえばよい。As shown in FIG. 10, a p-type SiC semiconductor
A p-type SiC epitaxial layer having a thickness of about 1.0 μm is formed on one main surface of the plate 50.
Taxi layer 51, thickness less than 2000 Å
N +The type epitaxial layer 52 is formed sequentially. This c
N in eha stateTwoHeat treatment in a gas atmosphere may be performed.
As described above, the heat treatment for improving the crystallinity and the like is performed at 80 ° C.
Equilibrium at 0 ° C, for the purpose of improving crystallinity only
In this case, the heat treatment may be performed at a temperature of 800 ° C. or less.
【００５８】続いて、カソード電極として、ｎ+ 型エピ
タキシャル層５２上に、Ｎｉ電極５３を設け、ｐ型Ｓｉ
Ｃ半導体基板５０の他主面にアノード電極としてＡｌ電
極５４を設け、Ｎ2 ガス雰囲気中で熱処理してＳｉＣ光
センサーを得る。Subsequently, a Ni electrode 53 is provided on the n + -type epitaxial layer 52 as a cathode electrode, and a p-type Si
An Al electrode 54 is provided as an anode electrode on the other main surface of the C semiconductor substrate 50, and a heat treatment is performed in an N 2 gas atmosphere to obtain a SiC optical sensor.
【００５９】上記したように、ｎ+ 型エピタキシャル層
５２を形成後の熱処理や電極形成時の熱処理でセンサー
感度の向上が図れる。特に、ｎ+ 型エピタキシャル層５
２が２０００オングストローム以下と薄膜であるため、
電極金属であるＮｉが熱処理によっって拡散する深さを
できる限り浅くしなければならない。この点では、Ｎ 2
ガスによる熱処理の場合、Ａｒガスでの熱処理の場合に
比べて熱処理温度を１００℃程度低温化できることが有
効になる。As described above, n+Type epitaxial layer
Heat treatment after forming 52 and heat treatment when forming electrodes
The sensitivity can be improved. In particular, n+Type epitaxial layer 5
2 is 2000 Å or less, which is a thin film,
The depth to which the electrode metal Ni diffuses due to the heat treatment
Must be as shallow as possible. In this respect, N Two
In the case of heat treatment with gas, in the case of heat treatment with Ar gas
In some cases, the heat treatment temperature can be reduced by about 100 ° C.
It works.
【００６０】上記した熱処理は窒素ガスを主成分とする
混合ガスを用いても同様の効果が得られる。The same effect can be obtained in the above-mentioned heat treatment by using a mixed gas containing nitrogen gas as a main component.
【００６１】更に、上記した実施の形態では、ｎ型Ｓｉ
Ｃエピタキシャル層へのオーミック電極形成に関して述
べたが、ｎ型ＳｉＣ基板や、ｐ型ＳｉＣエピタキシャル
層及びｐ型ＳｉＣ基板へのオーミック電極形成に関して
も同様の効果を有する。Further, in the above embodiment, the n-type Si
Although the description has been given of the formation of the ohmic electrode on the C epitaxial layer, the same effect can be obtained with respect to the formation of the ohmic electrode on the n-type SiC substrate, the p-type SiC epitaxial layer and the p-type SiC substrate.
【００６２】[0062]
【発明の効果】以上説明したように、オーミック電極形
成の熱処理を窒素ガス若しくは窒素ガスを主成分とする
混合ガス中で行うことにより、安定してオーミック電極
を形成できるとともに、熱処理温度の低下が可能にな
る。また熱処理時間の短縮も可能になることから、浅い
ｐｎ接合を有するＳｉＣ半導体素子でのオーミック電極
形成が極めて容易になる。As described above, by performing the heat treatment for forming the ohmic electrode in nitrogen gas or a mixed gas containing nitrogen gas as a main component, the ohmic electrode can be formed stably and the heat treatment temperature can be reduced. Will be possible. Further, since the heat treatment time can be shortened, it becomes extremely easy to form an ohmic electrode in a SiC semiconductor device having a shallow pn junction.
【００６３】また、ＳｉＣ半導体基板やＳｉＣエピタキ
シャル層の熱処理を窒素ガス若しくは窒素ガスを主成分
とする混合ガス中で行うことにより基板の安定化やエピ
タキシャル層の安定化が可能になる。The heat treatment of the SiC semiconductor substrate and the SiC epitaxial layer is performed in nitrogen gas or a mixed gas containing nitrogen gas as a main component, so that the substrate can be stabilized and the epitaxial layer can be stabilized.
【図１】オーミック電極の特性を測定するために用いた
試料構造を示す断面図である。FIG. 1 is a sectional view showing a sample structure used for measuring characteristics of an ohmic electrode.
【図２】この発明による熱処理方法によって得られたオ
ーミック電極の特性と従来方法によって得られたオーミ
ック電極の特性とを比較した電圧−電流特性図である。FIG. 2 is a voltage-current characteristic diagram comparing characteristics of an ohmic electrode obtained by a heat treatment method according to the present invention with characteristics of an ohmic electrode obtained by a conventional method.
【図３】この発明による熱処理方法によって得られたオ
ーミック電極の特性と従来方法によって得られたオーミ
ック電極の特性とを比較した電圧−電流特性図である。FIG. 3 is a voltage-current characteristic diagram comparing characteristics of an ohmic electrode obtained by a heat treatment method according to the present invention with characteristics of an ohmic electrode obtained by a conventional method.
【図４】ＳｉＣ半導体ウェハをＮ2 ガス中で熱処理を施
したサンプルと、熱処理を施していないサンプルとのフ
ォトルミネッセンス（ＰＬ）強度の特性図である。FIG. 4 is a characteristic diagram of photoluminescence (PL) intensity of a sample obtained by performing a heat treatment on an SiC semiconductor wafer in N 2 gas and a sample not subjected to the heat treatment.
【図５】この発明をＳｉＣＭＥＳＦＥＴの製造に適用し
た場合を示す断面図である。FIG. 5 is a cross-sectional view showing a case where the present invention is applied to the manufacture of a SiC MESFET.
【図６】この発明をＦＥＴの製造に適用した場合を示す
断面図である。FIG. 6 is a sectional view showing a case where the present invention is applied to the manufacture of an FET.
【図７】この発明をＳｉＣ発光ダイオードの製造に適用
した場合を示す断面図である。FIG. 7 is a sectional view showing a case where the present invention is applied to the manufacture of a SiC light emitting diode.
【図８】この発明をＳｉＣバイポーラトランジスタの製
造に適用した場合を示す断面図である。FIG. 8 is a sectional view showing a case where the present invention is applied to the manufacture of a SiC bipolar transistor.
【図９】この発明をＳｉＣＭＯＳＦＥＴの製造に適用し
た場合を示す断面図である。FIG. 9 is a sectional view showing a case where the present invention is applied to the manufacture of a SiCMOSFET.
【図１０】この発明をＳｉＣ光センサーの製造に適用し
た場合を示す断面図である。FIG. 10 is a sectional view showing a case where the present invention is applied to the manufacture of a SiC optical sensor.
１ ｎ型ＳｉＣ半導体基板 ２ ｐ型ＳｉＣエピタキシャル層 ３ ｎ型ＳｉＣエピタキシャル層 ４ Ｎｉ電極 Reference Signs List 1 n-type SiC semiconductor substrate 2 p-type SiC epitaxial layer 3 n-type SiC epitaxial layer 4 Ni electrode
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 29/78 Ｈ０１Ｌ 29/72 21/338 29/78 ３０１Ｂ 29/812 ３０１Ｆ 33/00 29/80 Ｍ Ｆターム(参考） 4M104 AA03 BB02 BB05 BB06 CC01 CC03 DD78 DD79 GG04 GG05 GG06 GG09 GG12 HH15 5F003 BH00 BM01 BP42 5F040 DA10 DC02 EC10 EH00 EH02 5F041 CA33 CA73 CA98 CA99 5F102 FA00 GC01 GD01 GL02 GT01 HC11 HC21 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI theme coat ゛ (Reference) H01L 29/78 H01L 29/72 21/338 29/78 301B 29/812 301F 33/00 29/80 MF Term (reference) 4M104 AA03 BB02 BB05 BB06 CC01 CC03 DD78 DD79 GG04 GG05 GG06 GG09 GG12 HH15 5F003 BH00 BM01 BP42 5F040 DA10 DC02 EC10 EH00 EH02 5F041 CA33 CA73 CA98 CA99 5F102 FA00 GC01 GD01 GL01 GL01 HC02
Claims (4)
素ガスを主成分とする混合ガス中で熱処理を施すことを
特徴とする炭化珪素半導体の熱処理方法。1. A heat treatment method for a silicon carbide semiconductor, wherein the heat treatment is performed on the silicon carbide semiconductor in nitrogen gas or a mixed gas containing nitrogen gas as a main component.
を特徴とする請求項１に記載の炭化珪素半導体の熱処理
方法。2. The heat treatment method for a silicon carbide semiconductor according to claim 1, wherein the heat treatment is performed at a temperature of 200 ° C. or higher.
属を形成した後、窒素ガス中若しくは窒素ガスを主成分
とする混合ガス中で熱処理を施し、オーミック接触をと
ることを特徴とする炭化珪素半導体装置の製造方法。3. A silicon carbide semiconductor, comprising: forming a metal for an ohmic electrode on a silicon carbide semiconductor; and performing a heat treatment in a nitrogen gas or a mixed gas containing a nitrogen gas as a main component to form an ohmic contact. Device manufacturing method.
金属膜を形成し、窒素ガス中若しくは窒素ガスを主成分
とする混合ガス中で熱処理を施して、オーミック接触を
形成後、炭化珪素半導体上にショットキー電極を形成す
ることを特徴とする炭化珪素半導体装置の製造方法。4. A metal film for source and drain is formed on a silicon carbide semiconductor, and heat treatment is performed in a nitrogen gas or a mixed gas containing nitrogen gas as a main component to form an ohmic contact. Forming a Schottky electrode on a silicon carbide semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32025798A JP3996282B2 (en) | 1998-11-11 | 1998-11-11 | Method for manufacturing silicon carbide semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32025798A JP3996282B2 (en) | 1998-11-11 | 1998-11-11 | Method for manufacturing silicon carbide semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000150417A true JP2000150417A (en) | 2000-05-30 |
| JP3996282B2 JP3996282B2 (en) | 2007-10-24 |
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| JP32025798A Expired - Lifetime JP3996282B2 (en) | 1998-11-11 | 1998-11-11 | Method for manufacturing silicon carbide semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6627964B2 (en) | 2000-08-10 | 2003-09-30 | Ngk Spark Plug Co., Ltd. | Gas sensor |
| JP2006524016A (en) * | 2003-03-03 | 2006-10-19 | クリー インコーポレイテッド | Nitride-based integrated acoustic wave device and method for manufacturing nitride-based integrated acoustic wave device |
| JP2007173841A (en) * | 2005-12-22 | 2007-07-05 | Cree Inc | Silicon carbide bipolar junction transistor having silicon carbide passivation layer on base region and method of fabricating thereof |
| US7898047B2 (en) | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
| JP4690485B2 (en) * | 2007-10-24 | 2011-06-01 | パナソニック株式会社 | Manufacturing method of semiconductor device |
-
1998
- 1998-11-11 JP JP32025798A patent/JP3996282B2/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6627964B2 (en) | 2000-08-10 | 2003-09-30 | Ngk Spark Plug Co., Ltd. | Gas sensor |
| JP2006524016A (en) * | 2003-03-03 | 2006-10-19 | クリー インコーポレイテッド | Nitride-based integrated acoustic wave device and method for manufacturing nitride-based integrated acoustic wave device |
| US7875910B2 (en) | 2003-03-03 | 2011-01-25 | Cree, Inc. | Integrated nitride and silicon carbide-based devices |
| US7898047B2 (en) | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
| JP4740836B2 (en) * | 2003-03-03 | 2011-08-03 | クリー インコーポレイテッド | Nitride-based integrated acoustic wave device and method for manufacturing nitride-based integrated acoustic wave device |
| US8035111B2 (en) | 2003-03-03 | 2011-10-11 | Cree, Inc. | Integrated nitride and silicon carbide-based devices |
| US8502235B2 (en) | 2003-03-03 | 2013-08-06 | Cree, Inc. | Integrated nitride and silicon carbide-based devices |
| JP2007173841A (en) * | 2005-12-22 | 2007-07-05 | Cree Inc | Silicon carbide bipolar junction transistor having silicon carbide passivation layer on base region and method of fabricating thereof |
| JP4690485B2 (en) * | 2007-10-24 | 2011-06-01 | パナソニック株式会社 | Manufacturing method of semiconductor device |
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|---|---|
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