JPS62209127A - Epoxy resin composition for sealing semiconductor device - Google Patents

Abstract

PURPOSE:The titled composition capable of providing a cured material having improved thermal shock resistance and water-vapor resistance, obtained by blending an epoxy resin with a novolak type phenolic resin, a plastic porous material and an organic phosphine compound in a specific ratio. CONSTITUTION:(A) 100pts.wt. epoxy resin (preferably one having 70-85 deg.C softening point and 175-220 equivalents) is blended with (B) 40-65pts.wt. novolak type phenolic resin (one having 80-100 deg.C softening point and 100-110 OH equivalents) as a curing point, (C) 1-20pts.wt. plastic porous material (e.g., ABS resin, polymethylmethacrylate, PE, etc., preferably having 1-35mu average particle diameter and 1-10mu pore diameter) and (D) 0.01-20pts.wt., preferably 0.1-5pts.wt. organic phosphine compound (e.g., trimethylphosphine, etc.,) as a curing promotor to give the aimed composition.

Description

[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to an epoxy resin composition for encapsulating a semiconductor musical instrument;
More specifically, the present invention relates to an epoxy resin composition for sealing a semiconductor device 1 that provides a cured product having excellent heat shock resistance and moisture resistance.

[Technical background of the invention and its problems]

In recent years, in the field of semiconductor device encapsulation, as semiconductor devices have become highly integrated, various functional units on devices have become finer and device pellets themselves have become larger.

Due to these changes in the pellets, conventional sealing resins are no longer able to satisfy the requirements for thermal shock resistance and the like. Conventionally, it has been used as a sealing resin for semiconductor devices.

The epoxy resin composition made into a single product based on phenol novolag has excellent hygroscopicity, high d air properties, III, shapeability, etc., and has become the mainstream resin for molding.

However, when this thread-like resin composition is used to seal a large device pellet with a fine surface structure, phosphosilicate, which is a coating material to protect the aluminum (AJ?) pattern on the surface of the device pellet, is removed. Glass (PSG
) film or silicon nitride (SiN) film, or the element pellet. Particularly when a thermal cycle test is carried out, the tendency force S is extremely large. As a result, defects such as defects in element characteristics due to pellet cracking and defects due to corrosion of the AI pattern due to cracks in the iG pattern occur.

As a countermeasure, the stress on the internal encapsulation of the sealing resin should be reduced, and the PSG film or SiN film on the sealing resin and the element should be
It is necessary to increase the adhesion with the glass membrane of the olfactory membrane.

Furthermore, in order to prevent hearing loss from corrosion of the Al pattern on the surface of the element, the cured product has been designed to suppress hydrolyzable halogen exposure, especially chlorine, to a low level, and to maintain a high level of 42 insulation performance during moisture absorption and high temperatures. need to be kept.

[Purpose of the invention]

The object of the present invention is to eliminate the above-mentioned drawbacks, and to provide an epoxy tree composition for use in four-body enclosures for cows, which provides a cured product with excellent thermal shock resistance and moisture resistance.

[Summary of the invention]

The epoxy resin composition for encapsulating a semiconductor device of the present invention includes (al epoxy resin 100 parts by weight (b
) Novolac type phenolic resin 40-65 heavy blue part f
c) Plastic porous award book 1 to 20 electric parts fdl It is characterized by consisting of 0.01 to 20% by weight of an organic phosphine compound.

Epoxy resin fa which is one component in the composition according to the present invention
) include bisphenol A type epoxy resin, novolak type epoxy oil, alicyclic type epoxy resin, and glycidyl ester type epoxy (uh), which may also be combined. Specific examples of these epoxy resins include EOCN-102S (made in Japan, softening point 74°C,
Epoxy per i215).

II; CN-1273 (Ciba Geigy, softening point 73°C
.

Epoxy i230), IAPPN-201 (E1
Book 1't < Sardine, softening point 65℃, epoxy),
Shrimp: l-to 1001 (Shell Chemical, softening point 70"C
, epoxy i1475), Chissonox 201
(fso ■, viscosity 1800 cps (25°C), epoxy equivalent: 154), Chissonox 289 (chisso ■, viscosity 870 cps (25°C), epoxy equivalent: t219). Among the above epoxy resins, the softening point is 60.
Those having a temperature of ~100°C are preferred, particularly preferably 7
It has a temperature of 0 to 85°C. Also, the epoxy equivalent is 1
00 to 300 is preferred, and 175 to 220 is particularly preferred.

This fa) component preferably contains epoxy resin 100%
It is constructed by adding up to 30 parts by weight of flame-retardant epoxy resin.

Novolac type phenolic resin 1blμfa according to the present invention
It acts as a curing agent for the epoxy resin component (1).For example, those having two or more phenolic hydroxyl groups such as phenol novolac resin and cresol novolac resin are listed. The middle mole of the novolak type phenolic resin also preferably has a softening point of 60 to 120 °C, particularly preferably 5 o-too °C, and preferably has a hydroxyl equivalent of 100 to 150,
Particularly preferred is one having a molecular weight of 100 to 110.

Component (c) according to the present invention may be any porous plastic material, such as ABS.
Resin, AS resin, polystyrene/polymethyl methacrylate, polyphenylene ether resin, polyethylene,
Examples include porous materials such as polypropylene, butyral resin, polyamide, fluororesin, and ethylene-vinyl acetate resin, and methods for producing porous/lambda materials include chemical methods, methods using sword heat, and mechanical methods. The preferred method is to produce a porous body by heating.

This [c) component has an average particle size of 0.2 to 5 from the viewpoint of moldability.
0 μm is preferable, and more preferably 1.0 to 35
It is μm.

If the blending ratio of component (c) is less than 1 part by weight,
Sufficient thermal shock resistance cannot be obtained, and if it exceeds 20 parts by weight, the viscosity will significantly increase and moldability will deteriorate. For these reasons, the blending ratio is preferably in the range of 3 to 15 parts. The pore diameter of the porous body is preferably 0.1 to 20 μm, more preferably 1 to 10 μm.

The organic phosphine compound as component (d) according to the present invention is as follows.

A curable epoxy resin curing accelerator using phenolic resin. Such organic phosphine compounds include any compound that is normally used as a curing accelerator, such as trimethylphosphine, triethylphosphine, tributylphosphine, triethylphosphine, tri(p-methylphenyl). Phosphine, tri(nonylphenylphosphine), methyldiphenylphosphine, dibutylphenylphosphine, 2-tricyclohexylphosphine, 1,2-bis(diphenylphosphine)ethane, bis(diphenylphosphine)methane, etc. One or more e-foods selected from the group consisting of:

The above-mentioned organic phosphine compound is preferably blended in an amount of 0, oi to 20 parts by weight, more preferably 0.1 to 5 parts by weight, per 100 parts by weight of the epoxy resin. 0 before blending. If the content is less than 1% by weight, the curing speed will decrease, while if it exceeds 20 parts by weight, heat resistance, moisture resistance, and electrical customization properties will deteriorate.

The composition of the present invention may optionally contain zircon, silica, fused silica glass, alumina, aluminum hydroxide, glass, quartz glass, silicate calcium, gypsum, calcium carbonate, and magnesite.

Clay, kaolin, talc, iron powder, steel powder, mica, asbestos, silicon carbide, boron nitride, molybdenum dioxide, lead compounds, lead oxides, aluminum, titanium white.

An older brother of carbon black, etc. (βj; live-grade fat modified.

Wetting agent such as wax; 1 cup of epoxy silane, vinyl silane, amino silane, borane compound, alkoxy titanate compound, aluminum chelate compound, etc.
A known flame retardant agent containing antimony, a phosphorus compound, bromine, or chlorine may be blended. In addition, for the purpose of improving heat-resistant cylinders, etc., a % type improver such as Jco/oil may be added.

The epoxy resin composition for encapsulating semiconductor devices of the present invention exhibits excellent effects when applied to, for example, encapsulating integrated circuits, large-scale integrated circuits, transistors, thyristors, and diodes.

Next, a method for producing the epoxy resin composition for encapsulating semiconductor devices of the present invention will be described.

The composition of the present invention contains each of the above-mentioned components. It can be easily produced by melt blending using a hot roll with a knife edge, bath melt blending using a Nigu, 8 melt kneading using an extruder, mixing using a special mixer after pulverization, and an appropriate combination of these methods.

Note that a resin-encapsulated semiconductor device sealed using the composition of the present invention can be easily manufactured using a commonly used method. The most common method for this sealing is low-pressure transfer molding, but sealing by injection molding, compression molding, casting, etc. is also possible. The epoxy resin composition is cured by heating during sealing, and finally a resin-sealed semiconductor device +& can be obtained with the cured product of this composition. For curing, 150℃
It's too hot to heat it up.

In the following, the present invention will be explained in more detail with reference to percentage examples and comparative examples.

In addition, in the Examples and Comparison columns, all "parts" indicate "parts by weight."

[Embodiments of the invention]

Practical examples 1 to 6 Ortho-cresol novolak type epoxy resin (1216 parts per epoxy) 100 parts Brominated phenol novolac epoxy resin (bromine content 30 parts per thieboxyl 7280 parts)
14 ft1s, 50 parts of phenol novolac resin (Hydroxylic acid 104%), 1.5 parts of triphenylphosphine as a curing accelerator, 2tRS of carnauba wax as a molding agent.
1.8 parts of N coloring agent carbon powder, 407sH bath-melted silica powder as a heating agent, antimony trioxide 119 as a heat aid, and 2.4 parts of an epoxysilane coupling agent as a coupling agent between the photochromic agent and the resin. The mixture was then mixed with various plastic porous bodies according to the formulation table shown in Table 1.

Next, the mixture was kneaded with a twin-screw roll at 70 to 110°C, cooled, and then crushed to form tablets to obtain the epoxy resin composition for encapsulating a semiconductor device of the present invention.

Comparative Example 1 An epoxy resin composition for encapsulating a semiconductor device was obtained using the same composition as in Example except that the porous plastic body of Example was not used.

Comparative Example 2 The curing accelerator triphenylphosphine of the example was 1.5! I
The composition was the same as in Example except that 2-undecylimidazole 2.0 was used in place of s, from blending to production.

An epoxy resin composition for encapsulating a semiconductor device was obtained.

Comparative Example 3 Implementation '+f except that polyethylene powder (molecule 1i30000) was used instead of the plastic porous body of Example
The process from blending to production was carried out using the same 7-component composition as IJ, to obtain an epoxy resin IU1 composition for encapsulating semiconductor devices.

Using the obtained compositions of Examples 1 to 6 and Comparative Examples 1 to 6, low pressure transfer bottom shape @ (molding condition 175 ° C,
80 Kg/mtn'', 3 minutes) for 15 minutes to shoulder the PS()d, and sealing was performed using a test piece (8 mm x 8 mm) with an Al wiring r6 and γ s5+-.

The following tests were conducted to evaluate the heat resistance #i impact resistance and moisture resistance of the obtained sample element.

Thermal shock resistance test: Samples were subjected to cooling and heating cycles from -65°C to 150°C, and property defects were measured. After the measurement, the resin molded from the test element using fuming nitric acid was removed, and the P.S.
In case of cracks, the number of pads where cracks occurred among the 32 bonding pads was observed, and the Al migration slippage of the AJ wiring was also measured.

Moisture resistance deterioration test: A sealed product of the wiring corrosion measurement element was tested in 2.
Exposure to saturated steam at 5 atm for each test period.

Δ7! Passage/failure was judged based on disconnection due to corrosion.

In addition, as other structural characteristics, tests were conducted on volume resistivity, glass transition point, and flexural modulus.

Volume resistivity: After transfer molding at 175°C for 3 minutes according to JISK-6911, after-cure (17
The test was carried out using a sample treated at 5° C. for 8 hours. The measurement conditions are DC 500V marked, lO value and measurement temperature 150
The volume resistivity II at °C is shown.

Glass transition point: A 5 mm x 20 mm prismatic piece was cut out from the sample that had been molded and processed as described above, and glass transition and transfer were performed using a thermal expansion measuring machine at an elevated temperature of 5°C.

Flexural modulus: JIS K-6911VC$U, using molded and processed samples similar to those described above.

〔Effect of the invention〕

As is clear from the results in Table 2, the product of the present invention in the practical row has lower PSG cracks and AI wiring 5fIJ than the comparative product.
The number of products with defective element characteristics that showed excellent performance with a is as follows:
There were very few.

Even in the humidity test, there were some defective products! '13I salvation was also very small.

Claims (1)

[Scope of Claims] (a) 100 parts by weight of epoxy resin (b) 40 to 65 parts by weight of novolac type phenolic resin (
An epoxy resin composition for encapsulating a semiconductor device, comprising: c) 1 to 20 parts by weight of a porous plastic material; and d) 0.01 to 20 parts by weight of an organic phosphine compound.