JPS6220697B2 - - Google Patents

Info

Publication number
JPS6220697B2
JPS6220697B2 JP56137238A JP13723881A JPS6220697B2 JP S6220697 B2 JPS6220697 B2 JP S6220697B2 JP 56137238 A JP56137238 A JP 56137238A JP 13723881 A JP13723881 A JP 13723881A JP S6220697 B2 JPS6220697 B2 JP S6220697B2
Authority
JP
Japan
Prior art keywords
film
element isolation
insulating film
region
isolation region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56137238A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5839027A (ja
Inventor
Satoru Maeda
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56137238A priority Critical patent/JPS5839027A/ja
Priority to US06/307,877 priority patent/US4560421A/en
Publication of JPS5839027A publication Critical patent/JPS5839027A/ja
Publication of JPS6220697B2 publication Critical patent/JPS6220697B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
JP56137238A 1980-10-02 1981-09-01 Ｍｏｓ型半導体装置の製造方法 Granted JPS5839027A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56137238A JPS5839027A (ja) 1981-09-01 1981-09-01 Ｍｏｓ型半導体装置の製造方法
US06/307,877 US4560421A (en) 1980-10-02 1981-10-02 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56137238A JPS5839027A (ja) 1981-09-01 1981-09-01 Ｍｏｓ型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5839027A JPS5839027A (ja) 1983-03-07
JPS6220697B2 true JPS6220697B2 (cs) 1987-05-08

Family

ID=15193996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56137238A Granted JPS5839027A (ja) 1980-10-02 1981-09-01 Ｍｏｓ型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5839027A (cs)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061189A (cs) * 1973-09-28 1975-05-26

Also Published As

Publication number Publication date
JPS5839027A (ja) 1983-03-07

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