Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co LtdfiledCriticalTokyo Shibaura Electric Co Ltd
Priority to JP56137238ApriorityCriticalpatent/JPS5839027A/ja
Priority to US06/307,877prioritypatent/US4560421A/en
Publication of JPS5839027ApublicationCriticalpatent/JPS5839027A/ja
Publication of JPS6220697B2publicationCriticalpatent/JPS6220697B2/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers