JPS6220348A - Wafer rotating mechanism for rotating around its own axis and therearound - Google Patents

Abstract

PURPOSE:To minimize the diameter of an ion source by inclining a plurality of wafers which rotate around its own axis and therearound around the radial axis of the rotating motion to obtain excellent working performance. CONSTITUTION:A wafer holding mechanism 2 holds a wafer 3, rotates it around its own axis as designated by an arrow 12 and is supported through a supporting unit 4 to a rotating shaft 1 to rotate therearound as designated by an arrow 11. In this state, the wafer 3 and the mechanism 2 are inclined in a direction of an arrow 3. Thus, since the wafer 3 and the mechanism 2 can be rotated around its own axis and therearound without increasing the maximum outer diameter D of the mechanism, necessary working performance can be satisfied with a structure having excellent economy and high reliability without increasing an ion source and a containing vessel 6 more than required.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a thin film forming apparatus for semiconductors, etc., and particularly to a wafer rotation and revolution mechanism suitable for application to a compact processing apparatus that uses an ion beam.

[Background of the Invention] Ion beams used in processing equipment such as milling, sputtering, and implantation diverge and cannot be completely uniform in cross-sectional area. 278, 493, a method of irradiating the ion beam with the wafer mount tilted with respect to the beam has been widely proposed.

However, the conventional method has the following drawbacks.

1) As shown in FIG. 5, a method in which a plurality of rotating wafers 3 are attached to a revolving disk 5 and the entire disk is tilted with respect to the ion beam 7 while it is rotating on its own axis, reduces the connection between the wafers and the ion source. Since the distance differs for each wafer 3, it is difficult to obtain uniform processing performance over all wafers 3, and since the outer diameter of revolution differs depending on the inclination angle, the ion source and wafer 3
The vacuum container used to store the vacuum becomes large, which is uneconomical and has a negative impact on vacuum performance, etc.

2) As shown in FIG. 6, the first drawback can be avoided with a structure in which the rotating wafers 3 are tilted with respect to the ion beam 7, but it is difficult to align the tilt axis of the wafer with the wafer surface. Due to the inclination, the maximum outer diameter of revolution increases and the same drawbacks as mentioned above occur.

[Purpose of the invention]

The purpose of the present invention is to provide a structure in which the wafer rotates and revolves in an inclined state with respect to the ion beam, in order to improve milling performance.
A structure in which multiple wafers that rotate at a constant distance between the substrate and the ion source are tilted around the radial axis of the orbital motion, and the maximum outer diameter of the wafers that do not revolve when tilted does not increase, and a specified performance is obtained. The reason is that

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to FIGS. 1 to 4.

FIG. 1 shows a principle diagram of the present invention, and FIG. 4 shows a side view thereof. In FIGS. 1 and 4, the wafer holding mechanism 2 includes a wafer 3
The supporting device 4 rotates as shown by the arrow 12.
It is supported by the revolving axis 1 via 3) and revolves as shown by the arrow 11. In this state, the wafer 3 and the wafer holding mechanism 2 are tilted in the direction of the arrow 13.

FIG. 2 shows a case in which all wafers 3 and wafer holding mechanisms 2 are tilted in the same direction, and FIG. 3 shows a case in which adjacent wafers 3 and wafer holding mechanisms 2 are tilted in opposite directions.

According to this embodiment, the wafer 3 and the wafer holding mechanism 2 can be rotated, revolved, and tilted without increasing the maximum outer diameter of the rotation/revolution mechanism, so the ion source and storage container 6 can be Economical, reliable, and
Both have excellent structures and can satisfy the required processing performance.

〔Effect of the invention〕

According to the present invention, excellent processing performance can be achieved, the diameter of the ion source can be minimized, economy and reliability are excellent, vacuum performance can be improved, and vacuum equipment can be made more economical.

[Brief explanation of the drawing]

Fig. 1 is a principle diagram of a rotation/revolution mechanism according to an embodiment of the present invention;
Figures 3 and 3 are views showing the tilted state of the wafer support bag holder in Figure 1, Figure 4 is a side view of Figure 1, and Figures 5 and 6 are principle diagrams of a conventional wafer rotation mechanism. It is. DESCRIPTION OF SYMBOLS 1... Revolution axis, 2... Wafer holding mechanism, 3... Wafer, 4... Support device.

Claims (1)

[Scope of Claims] 1. A plurality of wafers, holding mechanisms for mounting the wafers, and supporting devices for supporting them revolve around revolution axes; In an apparatus that rotates about an axis, the wafer and the holding mechanism rotate and hold while being inclined at an arbitrary angle with respect to a plane formed by a line connecting the center of revolution and the wafer and the axis of revolution. A wafer revolution mechanism characterized by having a structure capable of the above-mentioned revolution movement.