JP2716142B2 - Semiconductor substrate ion implantation system - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to an ion implantation apparatus used in a semiconductor manufacturing process.

[Conventional technology]

FIG. 3 shows an example of a conventional ion implantation apparatus. In FIG. 3, reference numeral 1 denotes a disk chamber, in which a disk 12 rotated by a motor 2 is disposed, and the disk chamber 1 is driven by a motor 3 to a slide plate 5 with a ball screw 4. It is moved up and down along. Conventionally, this type of ion implantation apparatus has a structure in which the implantation angle is fixed during the implantation process.

[Problems to be solved by the invention]

Since the conventional ion implantation apparatus described above has a structure in which the implantation angle is fixed, a mask formed on the substrate when the substrate is implanted at a certain angle for the purpose of suppressing the channeling effect of the semiconductor substrate. There is a drawback that shadows occur due to irregularities such as the above, and regions where ions are not implanted occur.

An object of the present invention is to provide an ion implantation apparatus that solves the above-mentioned problems.

[Differences of the Invention from the Prior Art]

The present invention is different from the above-described conventional ion implantation apparatus in that the implantation angle is changed during the implantation process.

[Means for solving the problem]

In order to achieve the above object, a semiconductor substrate ion implantation apparatus according to the present invention sets an inclined semiconductor substrate on a rotating disk and performs an impurity implantation process on the semiconductor substrate while rotating the disk. An ion implantation apparatus including a mechanism for fixing an irradiation direction of an ion beam and changing a posture of a substrate with respect to the fixed ion beam.

〔Example〕

 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Example 1) Fig. 1 is a side view showing Example 1 of the present invention.

In the figure, a conduit 14 for guiding the ion beam B horizontally is shown.
And fix it horizontally. On the other hand, disk chamber 1
The slide plate 5 that guides and holds the pipe up and down is pivotally supported so as to be tiltable around an angle rotation axis 9 that is arranged horizontally at right angles to the axis of the conduit 14. 4 is a vertically moving ball screw for moving the disk chamber 1 up and down along the slide plate 5,
Reference numeral 3 denotes a motor that drives the ball screw 4 to rotate. Further, the conduit 14 and the disk chamber 1 are airtightly connected via the bellows 8 while maintaining a vacuum state.

Further, the variable angle ball screw 7 horizontally held by the stem 18 is connected to the slide plate 5 via the bearing 13,
The ball screw 7 is connected to the angle variable motor 6.

Further, the disk 12 driven by the disk rotation motor 2 is rotated.
Is disposed in the disk chamber 1. Substrate table on disk 12
12a are arranged on the same circumference, and the upper surface of the substrate table 12a is inclined downward toward the center of the disk 12.

In the embodiment, the semiconductor substrates 11 are arranged on the substrate table 12a of the disk 12, respectively.
And is rotated by a disk rotating motor 2 inside. The vertical motor 3 rotates the vertical ball screw 4 and the disk chamber 1 slides on the slide plate 5 to move up and down. Further, the angle variable motor 6 turns the angle variable ball screw 7 to move the angle of the entire disc chamber 1 and change the attitude of the substrate 11 with respect to the ion beam B, thereby changing the ion beam implantation angle. In this case, even if the disk chamber 1 is tilted with respect to the conduit 14, the bellows absorbs the change in the angle, and the vacuum is maintained by the bellows 8. If this mechanism is used, for example, an operation of changing the injection angle within a range of ± 7 ° for each vertical movement is possible, and the angle can be continuously changed during the vertical movement.

Second Embodiment FIG. 2 is a side view showing a second embodiment of the present invention. In this embodiment, an angle variable motor 10 is connected to the angle rotation shaft shown in FIG. 1, and the angle of the disk chamber 1 is directly changed by the motor 10. In this embodiment, since the angle rotation axis is directly moved, the ball screw 7 and the like shown in FIG. 1 are not required, and there is an advantage that the structure is simplified.

〔The invention's effect〕

As described above, according to the present invention, by changing the implantation angle during the implantation process, the ions can be evenly implanted into the semiconductor substrate, and as a result, the quality of the product can be improved.

[Brief description of the drawings]

FIG. 1 is a side view showing a first embodiment of the present invention, FIG. 2 is a side view showing a second embodiment of the present invention, and FIG. 3 is a sectional view showing a conventional example. DESCRIPTION OF SYMBOLS 1 ... Disc chamber, 2 ... Disk rotation motor 3 ... Vertical movement motor 4, ... Vertical movement ball screw 5 ... Slide plate, 6,10 ... Angle variable motor 7 ... Angle variable ball screw, 8 ... Bellows 9 ... Angular rotation axis, 11 ... Semiconductor substrate 12 ... Disc

Claims (1)

(57) [Claims] An ion implantation apparatus for setting a semiconductor substrate at an angle on a disk to be rotated and for implanting impurities into the semiconductor substrate while rotating the disk. A semiconductor substrate ion implantation apparatus comprising a mechanism for fixing and changing a posture of a substrate with respect to the fixed ion beam.