JPS62197362A - Method of joining ceramics to metal - Google Patents

Method of joining ceramics to metal

Info

Publication number
JPS62197362A
JPS62197362A JP3861286A JP3861286A JPS62197362A JP S62197362 A JPS62197362 A JP S62197362A JP 3861286 A JP3861286 A JP 3861286A JP 3861286 A JP3861286 A JP 3861286A JP S62197362 A JPS62197362 A JP S62197362A
Authority
JP
Japan
Prior art keywords
metal
ceramics
film
diamond film
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3861286A
Other languages
Japanese (ja)
Inventor
孫幸 横川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP3861286A priority Critical patent/JPS62197362A/en
Publication of JPS62197362A publication Critical patent/JPS62197362A/en
Pending legal-status Critical Current

Links

Landscapes

  • Pressure Welding/Diffusion-Bonding (AREA)
  • Ceramic Products (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はダイヤモンド膜もしくは1−carbon膜を
中間接合層としたセラミクスと金属との接合法に関する
〇 〔発明の概要〕 本発明は・セラミクスと金属を接合させる際、ダイヤモ
ンド膜もしくはi−aarbom膜を、固相反応を利用
して、セラミクス−金属間に中間接合膜として用いる接
合法である◎ 〔従来の技術〕 従来、金属とセラミクスを接合するにあたり、各種の接
着剤を利用することにより、接合すると −とができた
〇 〔発明が解決しようとする問題点〕 しかし従来の接着剤を利用した方法では・接着剤の耐熱
温度が、せいぜい150℃程度と低く、セラミクスの耐
熱性が良いという特徴を生かすことができないという問
題点を有していた0そこで本発明は従来のこのような問
題点を解決するもので、その目的とするところは、接着
剤を用いずに、金属とセラミクスを接合することである
O 〔問題点を解決するための手段〕 上記問題点を解決するために、本発明の接合法は、セラ
ミクスと金属を接合するにあたり、中間接合層としてダ
イヤモンド膜もしくはi −c a r b o n膜
を利用することを特徴とする◇ 〔実施例〕 以下に本発明の実施例を図面にもとづいて説明する0第
1図は本発明の実施例を工程順に示す図である。まず第
1図(a)の如< 、F ’s * Oo s N i
等の遷移金属上にダイヤモンド膜を形成させる。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a method of bonding ceramics and metal using a diamond film or a 1-carbon film as an intermediate bonding layer. When joining metals, this is a joining method in which a diamond film or i-aarbom film is used as an intermediate joining film between ceramics and metal using solid phase reaction. ◎ [Conventional technology] Conventionally, metals and ceramics are joined together. However, in the conventional method using adhesives, the heat resistance temperature of the adhesive is limited at most. The temperature was as low as about 150°C, which meant that the good heat resistance of ceramics could not be taken advantage of. Therefore, the present invention aims to solve these conventional problems. The method of the present invention is to join metal and ceramics without using adhesive. In doing so, it is characterized in that a diamond film or an i-carbon film is used as the intermediate bonding layer◇ [Example] An example of the present invention will be described below based on the drawings. FIG. 1 is a diagram showing an example of the present invention in the order of steps. First, as shown in Fig. 1(a), F's * Oos N i
A diamond film is formed on transition metals such as

ダイヤモンドの被複は、CVD法、プラズマCvD法、
イオンビーム蒸着法等、公知の方法で行なうことができ
る。lie、Oo、Ni等の遷移金属を基板に用いた場
合、ダイヤモンド膜が合成しにくくなる傾向にあり、ま
た被覆できたダイヤモンド膜は、高温で使用した場合に
変態を起こしてグラファイト化する。ところがこのグラ
ファイトが、基板とダイヤモンド膜の間の応力緩和層と
なり、密着強度を高めるために役立つ。
Diamond duplication can be done by CVD method, plasma CVD method,
This can be done by a known method such as ion beam evaporation. When a transition metal such as lie, Oo, Ni, etc. is used for the substrate, it tends to be difficult to synthesize a diamond film, and the diamond film that can be coated undergoes transformation and becomes graphite when used at high temperatures. However, this graphite acts as a stress-relaxing layer between the substrate and the diamond film, helping to increase the adhesion strength.

次いで第1図(6)の如く、セラミクスをダイヤモンド
膜上に接合させる。SiO等のセラミクスの接合は非酸
化性雰囲気中で、ダイヤモンド膜とセラミクス間の固相
反応を利用して行なう。
Next, as shown in FIG. 1 (6), ceramics are bonded onto the diamond film. Bonding of ceramics such as SiO is performed in a non-oxidizing atmosphere by utilizing a solid phase reaction between the diamond film and the ceramics.

第2図は、第1図の工程とは逆の工程順である◎まず第
2図(a)の如<、Sta等のセラミクス上にダイヤモ
ンド膜を形成させる。ダイヤモンドの被覆は、第1図と
同様に、CVD法、プラズマOVD法、イオンビーム蒸
着法等の公知の方法で行なう。セラミクス上へのダイヤ
モンド薄膜の被覆は、金属上への被覆よりも容易に行な
うことができる。
FIG. 2 shows the reverse process order from the process shown in FIG. 1. First, as shown in FIG. 2(a), a diamond film is formed on ceramics such as Sta. Diamond coating is performed by a known method such as CVD, plasma OVD, or ion beam evaporation, as in FIG. Coating diamond thin films on ceramics is easier than coating on metals.

次いで第2図(6)の如く、金属をダイヤモンド膜上に
接合させる・この場合は非酸化性雰囲気中で、ダイヤモ
ンドが800℃程度から金属と固相反応することを利用
する。
Next, as shown in FIG. 2 (6), the metal is bonded onto the diamond film. In this case, the solid phase reaction of diamond with the metal at about 800° C. is utilized in a non-oxidizing atmosphere.

以上の様な実施例において、金属とセラミクスの間には
ダイヤモンド膜を用いているが、このダイヤモンド膜の
代り)l(i−carbon膜を利用しても同様な効果
が得られる◎i −a a r b o n膜の基板上
への生成は1イオンブレーティング法、プラズマOVD
法等の公知の方法で行なうことができる。
In the above embodiments, a diamond film is used between the metal and the ceramic, but the same effect can be obtained by using an i-carbon film instead of the diamond film. A rbon film is formed on the substrate using one ion blating method, plasma OVD.
This can be done by a known method such as a method.

なお上で述べた実施例において、密着強度がより高いも
のは、セラミクス基板上にダイヤモンド膜を形成し、次
いで金属を固相反応を利用して接合させる方法である◎ 〔発明の効果〕 以上述べたような発明によれば、金属とセラミクスの間
にダイヤモンド膜もしくは(70&rklOn膜という
中間接合層を設けたことにより、金属とセラミクスとの
接合が可能になり、高温においても、この接合部材を使
用でき、セラミクスの特性を生かすことができるという
効果を有する0
In the above-mentioned embodiments, a method with higher adhesion strength is a method in which a diamond film is formed on a ceramic substrate and then metal is bonded using a solid phase reaction. [Effects of the Invention] As described above. According to this invention, by providing an intermediate bonding layer called a diamond film or (70&rklOn film) between metal and ceramics, it is possible to bond metals and ceramics, and this bonding member can be used even at high temperatures. 0, which has the effect of making use of the characteristics of ceramics.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(、)〜(6)は本発明の金属とセラミクス間合
の工程図である〇 第2図(α)〜(b)は本発明の第1図とは逆の工程の
セラミクスと金属との接合工程図である01・・・・・
・金属 2・・・・・・ダイヤモンド膜(i−carbon[9
)3・・・・−・セラミクス 以上 う 薯1@
Figures 1 (,) to (6) are process diagrams of the process between the metal and ceramics of the present invention. Figures 2 (α) to (b) are the process diagrams of the ceramics of the present invention in the opposite process to that in Figure 1. 01 which is a joining process diagram with metal...
・Metal 2...Diamond film (i-carbon[9
)3・・・・・・・Ceramics and above 1@

Claims (1)

【特許請求の範囲】[Claims]  セラミクスと金属を接合するにあたり、中間接合層と
して、ダイヤモンド膜もしくはi−carbon膜を利
用することを特徴とするセラミクスと金属との接合法。
A method for joining ceramics and metal, characterized in that a diamond film or an i-carbon film is used as an intermediate joining layer when joining ceramics and metal.
JP3861286A 1986-02-24 1986-02-24 Method of joining ceramics to metal Pending JPS62197362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3861286A JPS62197362A (en) 1986-02-24 1986-02-24 Method of joining ceramics to metal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3861286A JPS62197362A (en) 1986-02-24 1986-02-24 Method of joining ceramics to metal

Publications (1)

Publication Number Publication Date
JPS62197362A true JPS62197362A (en) 1987-09-01

Family

ID=12530083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3861286A Pending JPS62197362A (en) 1986-02-24 1986-02-24 Method of joining ceramics to metal

Country Status (1)

Country Link
JP (1) JPS62197362A (en)

Similar Documents

Publication Publication Date Title
JPH06115009A (en) Joining method for sintered ceramics body
EP0880801B1 (en) DIE ATTACHED SiC AND DIE ATTACH PROCEDURE FOR SiC
JPS62197362A (en) Method of joining ceramics to metal
JPS6077177A (en) Ceramic bonded body
JPS61214110A (en) Magnetic head
JPS62207773A (en) Method of joining ceramics
JPS58176189A (en) Metallization of silicon nitride and carbide sintered body surface
JPS6077179A (en) Method of adhering silicon nitride ceramic sintered body
JPS59156974A (en) Method of bonding ceramics and silicon
JPS5957972A (en) Diffusion bonding
KR960013524A (en) Solderable cobalt-containing cubic boron nitride (CBN) compact
JPS5935074A (en) Ceramic sheet
JPH0460946B2 (en)
JPH0344912A (en) Semiconductor device and manufacture thereof
JPS6378742A (en) Manufacture of high thermal conductive copper-stuck substrate
JPS6016883A (en) Ceramic composite body and manufacture
JPS6077185A (en) Ceramic sintered body and manufacture
JPS6183684A (en) Method of bonding ceramic and metal
SU446490A1 (en) Solder
JPS60246285A (en) Metal silicide coating forming silicon carbide base sinteredbody and manufacture
JPS59203778A (en) Method of bonding ceramic sintered bodies having different thermal expansion coefficients or ceramic sintered body to metal member
JPS60180968A (en) Insert material for bonding nitride ceramic
JPS63252975A (en) Method of joining ceramic material to metal member
JPS6395172A (en) Method of joining ceramic substrate to metal member
JPS6272575A (en) Manufacture of ceramic-metal bonded body