JPS62193287A - Amorphous photovoltaic device - Google Patents
Amorphous photovoltaic deviceInfo
- Publication number
- JPS62193287A JPS62193287A JP61035677A JP3567786A JPS62193287A JP S62193287 A JPS62193287 A JP S62193287A JP 61035677 A JP61035677 A JP 61035677A JP 3567786 A JP3567786 A JP 3567786A JP S62193287 A JPS62193287 A JP S62193287A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- substrate
- uneven
- amorphous semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000010408 film Substances 0.000 abstract description 33
- 238000006243 chemical reaction Methods 0.000 abstract description 19
- 230000015572 biosynthetic process Effects 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 230000001788 irregular Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 31
- 230000007423 decrease Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利尻兄駄
本発明は、太陽電池や光センサー等に好適に用いられる
非晶質光起電力装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an amorphous photovoltaic device suitable for use in solar cells, optical sensors, and the like.
従未傅扱術
非晶質光起電力装置には種々のタイプのものがあるが、
その中の一つに、第４図に示すようなｐ−１−ｎ接合型
の非晶質半導体薄膜を有する非晶質光起電力装置がある
。このものは、透明基板１の片面の透明電極２の上に、
９層３と１層４と１層５を接合した平らな非晶質半導体
薄膜６を形成し、その上に裏面電極７を形成した構造と
されている。There are various types of amorphous photovoltaic devices.
One of them is an amorphous photovoltaic device having a p-1-n junction type amorphous semiconductor thin film as shown in FIG. In this case, on the transparent electrode 2 on one side of the transparent substrate 1,
It has a structure in which a flat amorphous semiconductor thin film 6 is formed by bonding nine layers 3, one layer 4, and one layer 5, and a back electrode 7 is formed thereon.
このような構造の光起電力装置では、透明基板１を通し
て光が非晶質半導体薄膜６に入ると、光電効果により１
層４において電子・正孔対が発生し、電子が９層３へ、
正孔が１層５へ移行して起電力を生じる。しかしながら
、半導体薄膜６の基板側表面８も反対側表面９も平滑面
であるため、透明基板１と直角に入射した光は基板側表
面８で屈折することなく直進し、反対側表面９で正反対
に反射して半導体薄膜６より出て行くことになる。従っ
て、半導体薄膜６内における光路長が短く光を充分に吸
収できないため、光電変換効率があまり高くないといっ
た問題がある。In a photovoltaic device having such a structure, when light enters the amorphous semiconductor thin film 6 through the transparent substrate 1, the photovoltaic device generates 1 due to the photoelectric effect.
Electron-hole pairs are generated in layer 4, and electrons are transferred to layer 3,
The holes move to the first layer 5 and generate an electromotive force. However, since both the substrate-side surface 8 and the opposite-side surface 9 of the semiconductor thin film 6 are smooth, the light incident at right angles to the transparent substrate 1 travels straight without being refracted by the substrate-side surface 8, and is diametrically opposed to the opposite surface 9 by the substrate-side surface 8. The light is reflected and exits the semiconductor thin film 6. Therefore, since the optical path length within the semiconductor thin film 6 is short and light cannot be absorbed sufficiently, there is a problem that the photoelectric conversion efficiency is not very high.
かかる問題に対処するため、第４図に示すように、透明
基板１上の透明電極２０表面を凹凸化することによって
、その上のｐ ’？ｔ ３、ｉＮ４、ｎＦｊ５よりなる
非晶質半導体薄膜６と裏面電極７を凹凸状に形成した構
造の非晶質光起電力装置が開発された。このように非晶
質半導体薄膜６が凹凸状に形成されていると、透明基板
１を通って入射した光が該薄膜６の基板側の凹凸表面８
で屈折し、反対側の凹凸表面９で乱反射し、反射光の一
部が更に基板側の凹凸表面８で全反射する等、薄膜６内
で複雑な光路をとるため、光路長が増大する。To deal with this problem, as shown in FIG. 4, by making the surface of the transparent electrode 20 on the transparent substrate 1 uneven, p'? An amorphous photovoltaic device having a structure in which an amorphous semiconductor thin film 6 made of t3, iN4, and nFj5 and a back electrode 7 are formed in an uneven manner has been developed. When the amorphous semiconductor thin film 6 is formed in an uneven shape in this way, light incident through the transparent substrate 1 is transmitted to the uneven surface 8 of the thin film 6 on the substrate side.
The light is refracted at the surface of the thin film 6, diffusely reflected on the uneven surface 9 on the opposite side, and a part of the reflected light is further totally reflected on the uneven surface 8 on the substrate side, taking a complicated optical path within the thin film 6, thereby increasing the optical path length.
従って、凹凸状の薄膜６の光吸収量は平坦な薄膜よりも
遥かに多くなり（Ｉｓｃが向上する）、光電変換効率が
向上する。Therefore, the amount of light absorbed by the uneven thin film 6 is much greater than that of a flat thin film (Isc is improved), and the photoelectric conversion efficiency is improved.
一口がｌしようとする５ 声
しかしながら、第４図に示す非晶質光起電力装置によれ
ば、非晶質半導体薄膜６を成膜する前に透明基板１上の
透明電極２の表面を凹凸加工する必要があるため、製造
工程数が増加し生産効率の低下を招くといった問題があ
り、また凹凸加工を行う装置が必要となるため、設備コ
ストも増大するといった問題がある。更に、透明電極２
の表面に明瞭な凹凸を形成しても、非晶質半導体薄膜６
の成膜中に凹凸が徐々に平滑化されるため、該薄膜６の
裏面電極側の表面９に明瞭な凹凸が付きにくいといった
問題もある。この問題は、特に光が基板と反対側から入
射するタイプの光起電力装置の場合、入射光の屈折が不
充分となって光電変換効率の向上を妨げる原因となるの
で望ましくない本発明は上記問題点に鑑みてなされたも
ので、その目的とするところは、透明電極表面等の凹凸
加工が不要で効率よく製造することができ、しかも高い
光電変換効率を有する非晶質光起電力装置を提供するこ
とにある。However, according to the amorphous photovoltaic device shown in FIG. 4, the surface of the transparent electrode 2 on the transparent substrate 1 is made uneven before forming the amorphous semiconductor thin film 6. Since processing is required, there is a problem that the number of manufacturing steps is increased, leading to a decrease in production efficiency.Also, since a device for performing uneven processing is required, there is a problem that equipment costs also increase. Furthermore, transparent electrode 2
Even if clear unevenness is formed on the surface of the amorphous semiconductor thin film 6,
Since the unevenness is gradually smoothed during film formation, there is also the problem that clear unevenness is difficult to form on the surface 9 of the thin film 6 on the back electrode side. Especially in the case of a type of photovoltaic device in which light enters from the side opposite to the substrate, this problem causes insufficient refraction of the incident light and hinders improvement of photoelectric conversion efficiency. This was done in view of the problem, and its purpose is to create an amorphous photovoltaic device that can be manufactured efficiently without the need for uneven processing on the surface of transparent electrodes, and has high photoelectric conversion efficiency. It is about providing.
５ 声を解決するための手
上記目的を達成するため、本発明は、ｐ−１−ｎ接合型
の非晶質半導体薄膜を有する非晶質光起電力装置におい
て、非晶質半導体薄膜の基板側表面を平滑面とし、反対
側表面を凹凸面としたことを要旨とする。5. Measures to Solve the Problems To achieve the above object, the present invention provides an amorphous photovoltaic device having a p-1-n junction type amorphous semiconductor thin film, in which a substrate of the amorphous semiconductor thin film is used. The gist is that the side surface is a smooth surface and the opposite surface is an uneven surface.
衾皿■庇里
このように非晶質半導体薄膜の基板側表面を平滑面とし
反対側表面を凹凸面とすれば、実施例の中で詳述するよ
うに、プラズマＣＶＤ法で成膜するときの条件を途中で
一時変更し成膜中に凹凸化を行うことによって形成する
ことができる。従って、基板上の透明電極表面に凹凸加
工を施す工程が不要となるので、工程数増加による生産
効率低下の問題や、凹凸加工装置導入による設備コスト
増加の問題を解消することができる。また成膜中に凹凸
化するので、非晶質半導体薄膜の反対側表面を明瞭な凹
凸面とすることができ、特に成膜の後半に凹凸化を行え
ば一層明瞭な凹凸面とすることができる。If the surface of the amorphous semiconductor thin film on the substrate side is smooth and the surface on the opposite side is uneven, as described in detail in the examples, when the film is formed using the plasma CVD method, It can be formed by temporarily changing the conditions during the film formation to make the film uneven. Therefore, there is no need for the step of applying unevenness to the surface of the transparent electrode on the substrate, so it is possible to solve the problem of a decrease in production efficiency due to an increase in the number of steps and an increase in equipment cost due to the introduction of an unevenness processing device. In addition, since the surface is made uneven during film formation, the opposite surface of the amorphous semiconductor thin film can be made to have a clearly uneven surface.Especially, if the surface is made uneven during the latter half of the film formation, it can be made even more clearly uneven. can.
また、以下の作用■■によって光電変換効率が向上する
。In addition, the photoelectric conversion efficiency is improved by the following action (■).
■光が基板側から入射する場合。■When light enters from the board side.
この場合、光入射側となる半導体薄膜の基板側表面が平
滑面であるので、光入射側表面が凹凸面となっている第
４図の半導体Ｆｉ膜はど光路長は増加しない。従って、
光電変換効率は光吸収口の増加によってはあまり向上す
ることは期待できないが、ＦＦ（曲線因子）の向上によ
って増大する。In this case, since the substrate side surface of the semiconductor thin film on the light incident side is a smooth surface, the optical path length does not increase as compared to the semiconductor Fi film shown in FIG. 4 whose light incident side surface is an uneven surface. Therefore,
Although it is not expected that the photoelectric conversion efficiency will improve much by increasing the number of light absorption holes, it will increase by improving the FF (fill factor).
その理由は、基板と反対側の表面が凹凸しであることに
より半導体薄膜の１層の厚みが膜厚方向と直交する方向
に増減変化している関係上、膜厚よりも９層と０層を斜
めに結ぶ線の方が短い部分ができ、そのため、１層中で
光生成されたキャリアの一部がこの移動距離の短いコー
スをとって斜め方向に移動する結果、平均的な光生成キ
ャリアの移動径路が短くなること、及び半導体薄膜の反
対側凹凸表面と電極との接触面積の増加により接触抵抗
が減少することから、等測的な直列抵抗が減少するため
であると考えられる。The reason for this is that the thickness of one layer of the semiconductor thin film increases or decreases in the direction perpendicular to the film thickness direction due to the unevenness of the surface opposite to the substrate. The line that connects diagonally creates a shorter part, and as a result, some of the photogenerated carriers in one layer take this shorter course and move in the diagonal direction.As a result, the average photogenerated carrier It is thought that this is because the isometric series resistance decreases because the movement path of the semiconductor thin film becomes shorter and the contact resistance decreases due to an increase in the contact area between the uneven surface of the opposite side of the semiconductor thin film and the electrode.
■光が基板と反対側から入射する場合。■When light enters from the side opposite to the board.
この場合、光入射側となる半導体薄膜の反対側表面が凹
凸面であって入射光の屈折が充分に行われるため第４図
の半導体薄膜の場合と同様、光路長の増加により光吸収
量が増大しくＩｓｃが向上）、且つＦＦも上記と同様な
理由から向上するため、光電変換効率が向上する。In this case, the surface on the opposite side of the semiconductor thin film, which is the light incident side, is an uneven surface and the incident light is refracted sufficiently, so as in the case of the semiconductor thin film shown in Figure 4, the amount of light absorption increases due to the increase in the optical path length. (Isc increases) and FF also improves for the same reason as above, so the photoelectric conversion efficiency improves.
失施桝 以下、図面を参照しながら本発明の実施例を詳述する。Lost box Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は基板側から光が入射するタイプの非晶質光起電
力装置を示したもので、この光起電力装置は、ガラス等
よりなる透明基板１の上に、Ｉｎ４０ｓ 、ＩＴＯ，５
ｎＯｚ等の透光性導電酸化物よりなる透明電極２を形成
すると共に、その上にｐ−１−ｎ接合型の非晶質半導体
薄膜６を形成し、更にその上にＡ１等の金属よりなる裏
面電極７を形成した構造とされている。FIG. 1 shows an amorphous photovoltaic device of the type in which light enters from the substrate side. In this photovoltaic device, In40s, ITO, 5
A transparent electrode 2 made of a translucent conductive oxide such as nOz is formed, and a p-1-n junction type amorphous semiconductor thin film 6 is formed thereon, and furthermore, a transparent electrode 2 made of a metal such as A1 is formed. It has a structure in which a back electrode 7 is formed.
この非晶質半導体薄膜６は、ボロン（Ｂ）をドープした
ａ−３ｉＣ等のｐ型非晶質半導体よりなるｐ Ｗｔ ３
と、不純物濃度の極めて低いａ−３ｉ等のｉ型非晶質半
導体よりなる１ｊｉｌＷ４と、燐（Ｐ）をドープしたａ
−３ｉ等のｐ型非晶質半導体よりなるｎＪｉ５を接合し
たもので、この薄膜６の基板側表面８は、粒径ｌＱｎｍ
以上の凹部と凸部を１平方μｍ当たり０．０１個未満の
割合で有する程度の平滑面とされ、反対側表面９が、粒
径Ｉｏｎｍ乃至１μｍの凹部と凸部を１平方μｍ当たり
００ｆ（［ｌｊ乃至１００００個の割合で有する程度の
凹凸面とされている。This amorphous semiconductor thin film 6 is made of a p-type amorphous semiconductor such as a-3iC doped with boron (B).
, 1jilW4 made of i-type amorphous semiconductor such as a-3i with extremely low impurity concentration, and phosphorus (P)-doped a
nJi5 made of a p-type amorphous semiconductor such as -3i is bonded, and the substrate side surface 8 of this thin film 6 has a grain size of lQnm.
The surface is smooth to the extent that it has the above-mentioned concave portions and convex portions at a ratio of less than 0.01 per 1 square μm, and the opposite surface 9 has 00 f ( [It is said that the surface has irregularities at a ratio of 10,000 to 10,000.
このような特異形状の半導体薄膜６は、プラズマＣＶＤ
法（高周波グロー放電法）で成膜するときの条件を途中
で一時変更し成膜中に凹凸化を行うことによって形成す
ることができる。The semiconductor thin film 6 having such a unique shape is produced by plasma CVD.
It can be formed by temporarily changing the conditions during film formation using a method (high frequency glow discharge method) and making the film uneven during film formation.
今、９層３がｐ型ａ−３ｉＣ，１層４がｉ型ａ−３ｉ、
１層５がｎ型ａ−３ｉである半導体薄膜６を形成する場
合を例にとって説明すると、まず、基板１上の透明電極
２０表面に、下記第１表に例示のような通常のｐ層成膜
条性下でｐ眉３を成膜する。このように通常のｐ層成膜
条性下に成膜を行えば、第１図に示すような層厚の一定
した平坦な９層３が形成されるが、その場合、ｐ眉３の
透明電極２との接合面、つまり半導体薄膜６の基板側表
面８は、透明電極２の表面がもともと粒径１０ｎｍ以上
の凹部と凸部を１平方μｍ当たり０．０１個未満の割合
で有する程度の平滑面であるので、自然に上記のような
平滑面となる。Now, 9th layer 3 is p type a-3iC, 1st layer 4 is i type a-3i,
To explain the case of forming a semiconductor thin film 6 in which the first layer 5 is n-type a-3i, first, a normal p layer is formed on the surface of the transparent electrode 20 on the substrate 1 as shown in Table 1 below. A p-eyebrow 3 film is formed under a film-stripe condition. If the film is formed under the normal p-layer film forming conditions in this way, nine flat layers 3 with a constant layer thickness as shown in Fig. 1 will be formed, but in that case, the transparent p-layer 3 The bonding surface with the electrode 2, that is, the substrate-side surface 8 of the semiconductor thin film 6, is such that the surface of the transparent electrode 2 originally has concave portions and convex portions with a grain size of 10 nm or more at a rate of less than 0.01 per square μm. Since it is a smooth surface, it naturally becomes a smooth surface as shown above.
次いで１層４を成膜するとき、通常のｉ層成膜条性より
も高圧力で且つ低い高周波電力で最初成膜する。−例と
しては、圧力ＩＴｏｒｒ、高周波電力１０ Ｗ （１６
ｍＷ／ｃｕｔ） 、基板温度２００ｔ、ガス流１ｓｉＨ
＋ １０１００５ｅ （０，１６ｓｅｃｍ／ｃＪ）、
反応時間２分の条件下に成膜を行う。このような条件で
成膜すると、ＳｉＨ今は高周波電力が低いため分解不充
分となり、且つ高圧によって分子間距離が短縮されて結
合しやすくなるため、第１図に破線で示すように、粒径
１０ｎｍ〜１μｍ程度の多数の島状に成長した１層４′
が形成される。その後、下記第１表に例示するような通
常のｉ％ｉ成膜条件に戻して成膜を続行し、ｉ Ｍ４を
形成する。このように通常の条件に戻すと、島状のｉ眉
４’の凹凸面にそってほぼ一様な厚みで１層４が成膜さ
れるので、ｉＮ４のｎ Ｆ３５側の表面は凹凸面となる
。Next, when forming the first layer 4, the film is first formed at a higher pressure and lower radio frequency power than in the normal i-layer film forming process. - Examples include pressure I Torr, high frequency power 10 W (16
mW/cut), substrate temperature 200t, gas flow 1siH
+ 101005e (0.16sec/cJ),
Film formation is performed under conditions where the reaction time is 2 minutes. If a film is formed under these conditions, SiH will be insufficiently decomposed due to the low high-frequency power, and the high pressure will shorten the intermolecular distance and facilitate bonding, so the particle size will increase as shown by the broken line in Figure 1. One layer 4' grown in the form of many islands of about 10 nm to 1 μm
is formed. Thereafter, the normal i%i film forming conditions as exemplified in Table 1 below are returned to and film forming is continued to form iM4. When the conditions are returned to normal in this way, one layer 4 is formed with an almost uniform thickness along the uneven surface of the island-shaped i-brow 4', so the surface of the iN4 on the nF35 side becomes an uneven surface. Become.
しかる後、下記第１表に例示するような通常の成膜条件
で１層５を成膜する。このように通常の条件で成膜する
と、ｉ眉４の凹凸面に沿って第１図に示すごとき層厚の
ほぼ一様な凹凸状のｎＪｉ＃５が形成されるので、該１
層５の表面、つまり半導体薄膜６の基板と反対側表面９
は凹凸面となる。Thereafter, one layer 5 is formed under normal film forming conditions as exemplified in Table 1 below. When the film is formed under normal conditions as described above, uneven nJi#5 having a substantially uniform layer thickness as shown in FIG. 1 is formed along the uneven surface of the i-eye 4.
The surface of the layer 5, that is, the surface 9 of the semiconductor thin film 6 opposite to the substrate
becomes an uneven surface.
上記の島状の１層４′を形成するための成膜条件として
は、基板温度３００℃以下、圧力０． ５〜２ＴＯｒｒ
、高周波電力１〜２０ ｍＷ／ｃ＋Ｊ、ガス流１０．０
５〜１ ｓ ｅ ｃｍ／ｃｄを採用することが望ましく
、かかる成膜条件を採用すれば、最終的に形成される１
層５の表面、部ち半導体薄膜６の基板と反対側表面９が
、前記のような粒径１０ｎｍ乃至１μｍの凹部と凸部を
１平方μｍ当たり０．０１（［１乃至１００００（［１
ｉ１の割合で有する程度の凹凸面となる。The film forming conditions for forming the above-mentioned island-shaped single layer 4' include a substrate temperature of 300° C. or less, and a pressure of 0.5° C. or less. 5~2 Torr
, high frequency power 1-20 mW/c+J, gas flow 10.0
It is desirable to adopt 5 to 1 sec cm/cd, and if such film formation conditions are adopted, the final
The surface of the layer 5, that is, the surface 9 of the semiconductor thin film 6 opposite to the substrate, has concave and convex portions with a grain size of 10 nm to 1 μm as described above at 0.01 ([1 to 10,000 ([1
The surface has an uneven surface having a ratio of i1.
（以下余白）
」−」ニー表
とのような構造の非晶質光起電力装置は、発明の作用の
項で説明したように、半導体筒ｌＩ＊６の基板と反対側
表面９の凹凸化により主としてＦＦ（曲線因子）が向上
するため、光電変換効率が向上する。実験によれば、半
導体ＭＩＱ’を凹凸化しない点を除き他はすべて上記実
施例と同じ条件で作製した起電力装置については、ＦＦ
が０．５８、光電変換効率（ＡＭ １． １００ｍＷ
／ｃａりが７゜８％であるが、凹凸化した上記実施例の
光起電力装置では、ＦＦが０．６５．光電変換効率が８
゜７％と向上することが確認された。(Left below) An amorphous photovoltaic device having a structure similar to the knee table has an uneven surface 9 on the side opposite to the substrate of the semiconductor cylinder lI*6, as explained in the section of the function of the invention. This mainly improves the FF (fill factor), thereby improving the photoelectric conversion efficiency. According to experiments, an electromotive force device manufactured under the same conditions as in the above example except that the semiconductor MIQ' was not made uneven had a FF
is 0.58, photoelectric conversion efficiency (AM 1. 100mW
/ca is 7°8%, but in the photovoltaic device of the above example with the uneven surface, the FF is 0.65. Photoelectric conversion efficiency is 8
It was confirmed that the improvement was 7%.
第２図は、基板と反対側から光が入射するタイプの非晶
質光起電力装置を示したもので、この光起電力装置は、
電極を兼ねたＳＵＳ等よりなる金泥基板１０の上に、０
層５と１層４と９層３をこの順で接合した非晶質半導体
薄膜６を形成し、更にその上にＩ ｎ、０３ ＋ Ｉ
Ｔ Ｏ＋ Ｓ ｎ ０２等の透光性導電酸化物より
なる透明電極１１を形成した構造とされており、この半
導体薄膜６も前記実施例と同様に基板側表面８が平滑面
、反対側表面９が凹凸面とされている。そして、この半
導体薄膜６の０層５はプラズマＣＶＤ法によって下記第
２表に示す成膜条件化に成膜したｎ型ａ−３ｉより構成
され、１層４は前記実施例と同様の条件で成膜した島状
の１層４′の上に下記第２表に示す条件で成膜したｉ型
ａ−３ｉより構成され、９層３は下記第２表に示す条件
で成膜したｐ型ａ−５ｉより構成されている。Figure 2 shows an amorphous photovoltaic device of the type in which light enters from the side opposite to the substrate.
On a gold mud substrate 10 made of SUS etc. which also serves as an electrode,
An amorphous semiconductor thin film 6 is formed by bonding layers 5, 1, 4, and 9 in this order, and furthermore, I n, 03 + I
It has a structure in which a transparent electrode 11 made of a light-transmitting conductive oxide such as T O+ S n 02 is formed, and this semiconductor thin film 6 also has a smooth surface 8 on the substrate side and a surface 9 on the opposite side as in the previous embodiment. is considered to be an uneven surface. The 0th layer 5 of this semiconductor thin film 6 is composed of n-type a-3i formed by the plasma CVD method under the film forming conditions shown in Table 2 below, and the 1st layer 4 is formed under the same conditions as in the previous example. The 9 layers 3 are composed of an i-type a-3i film formed under the conditions shown in Table 2 below on the formed island-like single layer 4', and 9 layers 3 are formed of a p-type film formed under the conditions shown in Table 2 below. It is composed of a-5i.
（以下余白）
」−」Ｌ−表
このような構造の非晶質光起電力装置は、発明の作用の
項で説明したように、半導体薄膜６の基板と反対側表面
９の凹凸化によりＦＦと共にＩｓＣが向上するため、光
電変換効率が向上する。実験によれば、半導体薄膜を凹
凸化しない点を除き他はすべて上記実施例と同じ条件で
作製した起電力装置については、光電変換効率（ＡＭ−
１，１００ｍＷ／ｃｆｉＩ）が６．７％であるが、凹凸
化した上記実施例の光起電力装置では、光電変換効率が
８．０％と向上することが確認された。(The following is a blank space) ``-''L-Table An amorphous photovoltaic device having such a structure is capable of forming an FF by making the surface 9 of the semiconductor thin film 6 opposite to the substrate uneven, as explained in the section of the function of the invention. At the same time, since IsC is improved, photoelectric conversion efficiency is improved. According to experiments, the photoelectric conversion efficiency (AM-
1,100 mW/cfiI) was 6.7%, but it was confirmed that in the photovoltaic device of the above example with the uneven structure, the photoelectric conversion efficiency was improved to 8.0%.
以上の二つの実施例はいずれも半導体薄膜６のｉ旧４を
成膜する最初の段階で島状の１層４′を形成して凹凸化
を行っているが、成膜の後半でこのような凹凸化を行う
ようにしてもよい。このように成膜の後半で凹凸化を行
えば、半導体薄膜６の基板と反対側表面９が明瞭な凹凸
を有する凹凸面となるので、ＦＦやｉｓｃが更に向上し
、光電変換効率が一層向上することになる。In both of the above two embodiments, an island-like single layer 4' is formed at the initial stage of forming the i-former 4 of the semiconductor thin film 6 to make it uneven. It is also possible to make the surface uneven. If unevenness is performed in the latter half of film formation in this way, the surface 9 of the semiconductor thin film 6 opposite to the substrate becomes an uneven surface with clear unevenness, which further improves FF and ISC, and further improves photoelectric conversion efficiency. I will do it.
１皿Ω羞来
以上の説明から明らかなように、本発明の非晶質光起電
力装置によれば、非晶質半導体薄膜の基板側表面を平坦
面、反対側表面を凹凸面としたため、光が基板側から入
射する場合は主としてＦＦの向上によって、また反対側
から入射する場合はＦＦと共にＩｓｃの向上によって、
光電変換効率が高められる。しかも、このような形状の
非晶質半導体薄膜は、プラズマＣＶＤ法で成膜するとき
の条件を途中で一時変更し成膜中に凹凸化を行うことに
よって容易に形成されるので、従来のように基板上の透
明電極表面に凹凸加工を施す工程が全く不゛要となり、
従って、工程数増加による生産効率低下の問題や、凹凸
加工装置導入による設備コスト増加の問題を解消するこ
とができる。また成膜工程の後半に凹凸化を行えば、非
晶質半導体薄膜の反対側表面が明瞭な凹凸面となるので
、光電変換効率のより一層の向上を期待できる等、優れ
た効果が得られる。As is clear from the above description, according to the amorphous photovoltaic device of the present invention, the substrate-side surface of the amorphous semiconductor thin film is a flat surface, and the opposite surface is an uneven surface. When light enters from the substrate side, it mainly improves FF, and when light enters from the opposite side, it improves both FF and Isc.
Photoelectric conversion efficiency is increased. Moreover, an amorphous semiconductor thin film having such a shape can be easily formed by temporarily changing the conditions during film formation using the plasma CVD method and making the film uneven during film formation. The process of applying unevenness to the surface of the transparent electrode on the substrate is completely unnecessary.
Therefore, it is possible to solve the problem of a decrease in production efficiency due to an increase in the number of steps and an increase in equipment cost due to the introduction of an uneven processing device. In addition, if unevenness is performed in the latter half of the film formation process, the opposite surface of the amorphous semiconductor thin film will have a clearly uneven surface, which can be expected to further improve photoelectric conversion efficiency and other excellent effects. .
第１図は本発明の一実施例に係る非晶質光起電力装置の
模式的な断面図、第２図は本発明の他の実施例に係る非
晶質光起電力装置の模式的な断面図、第３図及び第４図
はそれぞれ従来の異なる構造の非晶質光起電力装置の模
式的な断面図である。
１．１０・・・基板、３・・・２層、４・・・ｉ層、４
′・・・島状の１石、５・・・ｎＪＭ、６・・・非晶質
半導体薄膜、８・・・基板側表面、９・・・反対側表面
。FIG. 1 is a schematic cross-sectional view of an amorphous photovoltaic device according to one embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view of an amorphous photovoltaic device according to another embodiment of the present invention. 3 and 4 are schematic cross-sectional views of conventional amorphous photovoltaic devices having different structures, respectively. 1.10...Substrate, 3...2 layer, 4...i layer, 4
'... Island-shaped single stone, 5... nJM, 6... Amorphous semiconductor thin film, 8... Substrate side surface, 9... Opposite side surface.
Claims (2)
晶質光起電力装置において、上記非晶質半導体薄膜の基
板側表面が平滑面とされ、反対側表面が凹凸面とされて
いることを特徴とする非晶質光起電力装置。(1) In an amorphous photovoltaic device having a pin junction type amorphous semiconductor thin film, the substrate-side surface of the amorphous semiconductor thin film is a smooth surface, and the opposite surface is an uneven surface. An amorphous photovoltaic device characterized by:
以上の凹部と凸部を１平方μｍ当たり０．０１個未満の
割合で有する程度の平滑面とされ、反対側表面が、粒径
１０ｎｍ乃至１μｍの凹部と凸部を１平方μｍ当たり０
．０１個乃至１００００個の割合で有する程度の凹凸面
とされていることを特徴とする特許請求の範囲第（１）
項記載の非晶質光起電力装置。(2) The substrate side surface of the amorphous semiconductor thin film has a grain size of 10 nm.
The surface is smooth enough to have the above concave and convex portions at a rate of less than 0.01 per square μm, and the opposite surface has 0.01 concave and convex portions with a grain size of 10 nm to 1 μm per square μm.
．． Claim (1) characterized in that the surface has an uneven surface having a ratio of 0.01 to 10,000.
The amorphous photovoltaic device described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61035677A JPS62193287A (en) | 1986-02-20 | 1986-02-20 | Amorphous photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61035677A JPS62193287A (en) | 1986-02-20 | 1986-02-20 | Amorphous photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62193287A true JPS62193287A (en) | 1987-08-25 |
Family
ID=12448512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61035677A Pending JPS62193287A (en) | 1986-02-20 | 1986-02-20 | Amorphous photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62193287A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4315959A1 (en) * | 1993-05-12 | 1994-11-24 | Max Planck Gesellschaft | Electronic device with microstructured electrodes and method for producing such a device |
| JP2015188120A (en) * | 2015-07-31 | 2015-10-29 | シャープ株式会社 | photoelectric conversion element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59224183A (en) * | 1983-06-03 | 1984-12-17 | Semiconductor Energy Lab Co Ltd | Photoelectric converter device |
-
1986
- 1986-02-20 JP JP61035677A patent/JPS62193287A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59224183A (en) * | 1983-06-03 | 1984-12-17 | Semiconductor Energy Lab Co Ltd | Photoelectric converter device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4315959A1 (en) * | 1993-05-12 | 1994-11-24 | Max Planck Gesellschaft | Electronic device with microstructured electrodes and method for producing such a device |
| US5810945A (en) * | 1993-05-12 | 1998-09-22 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. | Method of fabricating an electronic micropatterned electrode device |
| JP2015188120A (en) * | 2015-07-31 | 2015-10-29 | シャープ株式会社 | photoelectric conversion element |
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