JPS61228679A - Optical generator - Google Patents
Optical generatorInfo
- Publication number
- JPS61228679A JPS61228679A JP60069732A JP6973285A JPS61228679A JP S61228679 A JPS61228679 A JP S61228679A JP 60069732 A JP60069732 A JP 60069732A JP 6973285 A JP6973285 A JP 6973285A JP S61228679 A JPS61228679 A JP S61228679A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- light
- irregularities
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title 1
- 238000004544 sputter deposition Methods 0.000 claims abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 21
- 239000000969 carrier Substances 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000011282 treatment Methods 0.000 abstract description 2
- 230000001788 irregular Effects 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 69
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は光を電気に変換する光発電装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to a photovoltaic device that converts light into electricity.
従来のアモルファスシリコン太陽電池を第６図に示す０
図において６は金属基板、６”はテキスチェア（ｔｅｘ
ｔｕｒｅ）化された基板、５は１層、４はｉ層、３はｐ
層、２は透明導電層、１は集電極である。A conventional amorphous silicon solar cell is shown in Figure 6.
In the figure, 6 is a metal board, and 6" is a text chair (text chair).
ture) substrate, 5 is 1 layer, 4 is i layer, 3 is p layer
Layer 2 is a transparent conductive layer, and 1 is a collector electrode.
従来のアモルファス太陽電池では、第６図（ａ）に示す
ように、テキスチェア化された基板６′を用いた場合で
も、同回申）に示すように、そうでない基板６を用いた
場合でも２層３．１層４、ｎ層５はそれぞれ堆積された
ままの平坦な形で形成されている。In conventional amorphous solar cells, even when a textured substrate 6' is used, as shown in FIG. 6(a), and even when a non-textured substrate 6 is used, as shown in Layer 3.1 Layer 4 and N layer 5 are each formed in a flat form as deposited.
次に動作について説明する。Next, the operation will be explained.
第６図の構成では、アモルファスシリコン層３．４．５
に垂直に入射した光は、ある屈折率で屈折するが、実質
的にはほとんど垂直のままアモルファスシリコンｉｉ３
．４．５を通り抜ける。多くの場合、基板の裏には裏面
電極としてＡＩ膜やＴｉ／Ａｇ膜（二層膜）が形成され
ており、この裏面電極によって反射した光は再びアモル
ファスシリコン層３．４．５に戻り、１層４で光励起キ
ャリアの発生に寄与する。In the configuration of FIG. 6, the amorphous silicon layer 3.4.5
Light incident perpendicularly to the amorphous silicon ii3 is refracted by a certain refractive index, but remains almost vertically.
．． Pass through 4.5. In many cases, an AI film or a Ti/Ag film (two-layer film) is formed on the back side of the substrate as a back electrode, and the light reflected by this back electrode returns to the amorphous silicon layer 3.4.5. One layer 4 contributes to the generation of photoexcited carriers.
従来の光発電装置は以上のように構成されており、光が
完全に吸収されるためには、アモルファスシリコン層３
．４．５内を数ミクロン通らなければならないが、現状
のｐｉｎ接合タイプではキャリアの移動度が小さいため
に１層４の厚さを１ミクロン以上とすることが困難であ
る。そのため、入射光は一部が吸収されずに外に出てし
まう。Conventional photovoltaic devices are constructed as described above, and in order for light to be completely absorbed, an amorphous silicon layer 3 is required.
．． However, in the current pin junction type, it is difficult to make the thickness of one layer 4 1 micron or more because the carrier mobility is low. Therefore, part of the incident light goes out without being absorbed.
この発明は、上記のような問題点を解決すやためになさ
れたもので、ｉ層の厚さは従来のままで光がｉ層を通る
距離を増大し、入射光を完全に吸収することができこれ
により同じ入射光量でも光の利用率を高くして電気出力
を増大できる光発電装置を提供することを目的としてい
る・〔問題点を解決するための手段〕
この発明に係る光発電装置は、ｉ層の表面あるいはその
表面と裏面の両側を凹凸状に加工して光の透過経路を増
大させるようにしたものである。This invention was made to solve the above-mentioned problems, and it is possible to completely absorb incident light by increasing the distance that light passes through the i-layer while keeping the thickness of the i-layer the same as before. The object of the present invention is to provide a photovoltaic power generation device that can increase the electrical output by increasing the light utilization rate even with the same amount of incident light. [Means for solving the problem] A photovoltaic power generation device according to the present invention. In this example, the surface of the i-layer or both the front and back surfaces thereof are processed to have an uneven shape to increase the light transmission path.
この発明においては、ｉ層を凹凸状に加工したから入射
光は五層の凹凸状の表面でそれぞれ屈折し、１層内を斜
めに透過することとなるため、該入射光の透過経路が長
くなり、これによってｉ層での光励起キャリアの数が増
加し、電気出力を増大できる。In this invention, since the i-layer is processed to have an uneven shape, the incident light is refracted by each of the uneven surfaces of the five layers and is transmitted obliquely through one layer, so the transmission path of the incident light is long. As a result, the number of photoexcited carriers in the i-layer increases, and the electrical output can be increased.
以下この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１．２図は本発明の第１；第２の実施例による光発電
装置を示し、これは基板としてステンレス等の金属基板
を用いたものである。1.2 shows a photovoltaic device according to the first and second embodiments of the present invention, which uses a metal substrate such as stainless steel as the substrate.
次にこれら第１．第２の実施例装置の製造方法を第３図
を用いて説明する。まず基板６上に１層５、及び１層４
を形成する０次に、
（１１写真製版技術を用いて１層４上にレジスト７をバ
ターニングする（第３回申））、ここでパターンは任意
であるが、細ければ細い程良い０次にレジスト７０つい
ていない部分を薬品又はスパッタ法を用いてエツチング
し、さらにレジスト７を取り除く（第３図（Ｃ））。
ここで凸部７の高さＨは数十オングストロームへ数千オ
ングストロームとする。Next, these first. A method of manufacturing the device of the second embodiment will be explained with reference to FIG. First, one layer 5 and one layer 4 are placed on the substrate 6.
Next, (11 patterning resist 7 on layer 4 using photolithography technology (3rd report)), the pattern here is arbitrary, but the thinner the better. Next, the portions where the resist 70 is not attached are etched using chemicals or sputtering, and the resist 7 is further removed (FIG. 3(C)).
Here, the height H of the convex portion 7 is several tens of angstroms to several thousand angstroms.
（２） 又は、レーザビームを１層４表面に照射して
第３図（Ｃ）と同じパターン又はその他の任意の１＜タ
ーンでｉ層表面を硝る。この場合も凸部の高さＨは数十
オングストロームへ数千オングストロームとする。(2) Alternatively, irradiate the surface of one layer 4 with a laser beam to nitrate the surface of the i layer in the same pattern as in FIG. 3(C) or any other arbitrary 1< turn. In this case as well, the height H of the convex portion is set to several tens of angstroms to several thousand angstroms.
（３） 又は、１１４表面を直接スパツクすることに
よって微小の凹凸を形成する（第３図（ｄ））。(3) Alternatively, minute irregularities are formed by directly sprinkling the surface of 114 (FIG. 3(d)).
（４） 又は、１層５に上記（１）〜り３）と同様の
処理を施して１層５をまず凹凸化しく第３図（ｅ））、
その上に１層４を形成する（第３図（ｆ））。(4) Alternatively, the first layer 5 is subjected to the same treatments as in (1) to 3) above to first make the first layer 5 uneven (FIG. 3(e)),
One layer 4 is formed thereon (FIG. 3(f)).
以上のようにして凹凸を有する１層を形成し、その上に
９層３、透明導電膜２、集電極１をそれぞれ形成する（
第３図（幻）。One layer having unevenness is formed as described above, and nine layers 3, a transparent conductive film 2, and a collector electrode 1 are formed on it (
Figure 3 (phantom).
また第４図（ａ） （ｂ）は本発明の第３．第４の実施
例装置を示し、この装置のように、基板としてガラス等
の透明基板９上に透明導電膜２を形成したものを用いる
場合でも、上記金属基板の場合と同様に、ｎ層Ｌｔ層４
を上記（１）〜（３）の方法で形成し、その上に９層３
．裏面電極８をそれぞれ形成することによって第４図（
ａ）の装置が得られる。この場合、光入射面が基板側と
なるので、動作上は１層４の裏側に凹凸が形成されたこ
とになる。Further, FIGS. 4(a) and 4(b) show the third embodiment of the present invention. A fourth embodiment of the device is shown, and even when using a transparent conductive film 2 formed on a transparent substrate 9 such as glass as the substrate like this device, the n-layer Lt layer 4
is formed by the methods (1) to (3) above, and 9 layers 3
．． By forming the back electrodes 8, FIG.
The device a) is obtained. In this case, since the light incident surface is on the substrate side, in terms of operation, unevenness is formed on the back side of one layer 4.
一方第４図世）の装置は、上記（４）の方法で１層４を
凹凸化し、その上に９層３．裏面電極８をそれぞれ形成
することによって得られる。なおこの場合、１層５と９
層３は入れ換えても支障はない。On the other hand, in the device shown in Figure 4), the first layer 4 is made uneven using the method (4) above, and then the 9th layer 3. This can be obtained by forming the back electrodes 8 respectively. In this case, 1 layer 5 and 9
There is no problem even if layer 3 is replaced.
次に作用効果について説明する。Next, the effects will be explained.
第１〜第３図に示す金属基板による光発電装置の場合、
垂直に入射した光は、ＩＴＯ（透明導電１１１２）、９
層３，１１４表面でそれぞれ屈折し、１層４内部へ入る
。そしてこの１層４内では従来の平坦な１層４の場合と
比較して、１層４内を光が斜めに通るため通過距離が長
くなり、励起キャリアの発生率が多くなり、電気出力が
増加する。In the case of the photovoltaic device using the metal substrate shown in FIGS. 1 to 3,
The vertically incident light is ITO (transparent conductive 1112), 9
It is refracted at the surfaces of layers 3 and 114, respectively, and enters the inside of layer 1. In this single layer 4, compared to the conventional flat single layer 4, light passes diagonally through the single layer 4, so the passage distance becomes longer, the generation rate of excited carriers increases, and the electrical output decreases. To increase.
また、第４図に示すガラス等の透明基板９に透明導電膜
２をコーティングしたものを基板とした装置の場合、ま
ず上記（１）〜（３）の方法で１層４を凹凸化した第４
図（ａ）の装置では、入射光は１層４を通り抜けた後、
裏面電極８で反射し、その反射光が再び１層４に入る時
に、凹凸によって多方向に屈折するため、この裏面反射
光が１層４内を斜めに通ることになる。In addition, in the case of a device using a transparent substrate 9 made of glass or the like coated with a transparent conductive film 2 as shown in FIG. 4
In the device shown in figure (a), after the incident light passes through one layer 4,
When the reflected light is reflected by the back electrode 8 and enters the first layer 4 again, it is refracted in multiple directions by the unevenness, so that the back reflected light passes diagonally through the first layer 4.
上記（４）の方法でｉ層を凹凸化した第４図中）の場合
は、入射光はガラス基板９、透明導電１！１１２．１層
５．１層４表面でそれぞれ屈折し、１層４内では斜めに
通過するため、励起キャリアの発生数が多くなり、電気
出力が増大する。In the case (in Fig. 4) in which the i-layer is made uneven using the method (4) above, the incident light is refracted at the surfaces of the glass substrate 9, the transparent conductive 1!112.1 layer 5.1 layer 4, and 4, the number of excited carriers generated increases and the electrical output increases.
なお、１層４の凹凸化は片側だけでなく両側に設けても
良い、すなわち第５図は１層の両側を凹凸化した本発明
の第５の実施例を示す、この装置の製造においては、ま
ず金属基板６上に１層５を形成し、上記実施例と同様に
上記（１）〜（３）の方法で１層５を凹凸化し、その上
に１層４を形成し、この１層４を再び上記（１）〜（３
）の方法で凹凸化する。Incidentally, the unevenness of one layer 4 may be provided not only on one side but also on both sides. In other words, FIG. 5 shows a fifth embodiment of the present invention in which both sides of one layer are made uneven. , First, one layer 5 is formed on the metal substrate 6, one layer 5 is made uneven by the methods (1) to (3) above, and one layer 4 is formed thereon, and this one layer 5 is made uneven. Layer 4 is again prepared from (1) to (3) above.
) to make it uneven.
その上に９層３．透明導電膜２．集電極１をそれぞれ形
成する。本装置の動作は上記実施例とほとんど同じであ
る。9 layers on top 3. Transparent conductive film 2. Collecting electrodes 1 are respectively formed. The operation of this device is almost the same as in the above embodiment.
また、ガラス基板に透明導電膜をコーティングしたもの
を基板として用いる場合は、まず第４図に示したような
基板９上に１層５を形成し、上記実施例と同様上記（１
）〜（３）の方法で１層５を凹凸化し、その上に１層４
を形成して再び（１）〜（３）の方法で１層４を凹凸化
する。その上に９層３、裏面電極８をそれぞれ形成する
ことによって１層４の両側を凹凸化することができる。In addition, when using a glass substrate coated with a transparent conductive film as the substrate, one layer 5 is first formed on the substrate 9 as shown in FIG.
) to (3) to make layer 5 uneven, and then layer 4 on top of it.
is formed, and one layer 4 is again made uneven using methods (1) to (3). By forming nine layers 3 and back electrodes 8 thereon, both sides of one layer 4 can be made uneven.
このような装置の動作は上記実施例とほとんど同じであ
り、ここで１層５と９層３は入れ替えても支障はない。The operation of such a device is almost the same as in the above embodiment, and there is no problem even if the 1st layer 5 and the 9th layer 3 are replaced here.
以上のように、この発明に係る光発電装置によれば、１
層を凹凸状に形成したため、入射光はｉ層内を斜めに通
過することとなり、間−入射光量に対する１層内部での
光励起キャリアの発生が増え、電気出力が増加し、その
結果光電変換効率を向上できる効果がある。As described above, according to the photovoltaic device according to the present invention, 1
Since the layer is formed in an uneven shape, the incident light passes diagonally through the i-layer, and the generation of photoexcited carriers within one layer increases relative to the amount of incident light between them, increasing the electrical output and, as a result, increasing the photoelectric conversion efficiency. It has the effect of improving
第１図及び第２図は各々本発明の第１．第２の実施例に
よる光発電装置の断面図、第３図は本発明の第１、第２
の実施例の製造方法を示す図、第４図は本発明の第３、
第４の実施例及びその動作を示す断面図、第５図は本発
明の第５の実施例及びその動作を示す断面図、第６図は
従来の光発電装置の断面図である。
１・・・集電極、２・・・透明導電膜、３・・・ｐ層、
４・・・ｉ層、５・・・１層、６・・・基板、６′・・
・テキスチュア基板、７・・・レジスト、８・・・裏面
電極、９・・・透明基板。FIG. 1 and FIG. 2 respectively show the first embodiment of the present invention. A sectional view of the photovoltaic device according to the second embodiment, FIG. 3 shows the first and second embodiments of the present invention.
FIG. 4 is a diagram showing the manufacturing method of the embodiment of the present invention.
FIG. 5 is a sectional view showing the fourth embodiment and its operation; FIG. 5 is a sectional view showing the fifth embodiment of the present invention and its operation; FIG. 6 is a sectional view of a conventional photovoltaic device. DESCRIPTION OF SYMBOLS 1... Collection electrode, 2... Transparent conductive film, 3... P layer,
4...i layer, 5...1 layer, 6...substrate, 6'...
- Texture substrate, 7...resist, 8...back electrode, 9...transparent substrate.
Claims (5)
装置において、光励起キャリア発生領域であるｉ層が凹
凸状を有することを特徴とする光発電装置。(1) An amorphous silicon photovoltaic device having a pin junction, characterized in that the i-layer, which is a photoexcited carrier generation region, has an uneven shape.
とを特徴とする特許請求の範囲第１項記載の光発電装置
。(2) The photovoltaic device according to claim 1, wherein the i-layer is processed into an uneven shape by photolithography.
したことを特徴する特許請求の範囲第１項記載の光発電
装置。(3) The photovoltaic device according to claim 1, wherein the i-layer is processed into an uneven shape using a laser beam.
したことを特徴とする特許請求の範囲第１項記載の光発
電装置。(4) The photovoltaic device according to claim 1, wherein the i-layer surface is processed into an uneven shape by sputtering.
形成することによって上記ｉ層に凹凸状を持たせたこと
を特徴とする特許請求の範囲第１項記載の光発電装置。(5) The light according to claim 1, characterized in that the i-layer has an uneven shape by forming an n-layer or a p-layer in an uneven shape and forming an i-layer thereon. Power generator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60069732A JPS61228679A (en) | 1985-04-02 | 1985-04-02 | Optical generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60069732A JPS61228679A (en) | 1985-04-02 | 1985-04-02 | Optical generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61228679A true JPS61228679A (en) | 1986-10-11 |
Family
ID=13411290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60069732A Pending JPS61228679A (en) | 1985-04-02 | 1985-04-02 | Optical generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61228679A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009152569A (en) * | 2007-11-30 | 2009-07-09 | Semiconductor Energy Lab Co Ltd | Method for manufacturing photoelectric conversion device |
| JP2010062302A (en) * | 2008-09-03 | 2010-03-18 | Mitsubishi Electric Corp | Thin-film solar cell and method of manufacturing the same |
-
1985
- 1985-04-02 JP JP60069732A patent/JPS61228679A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009152569A (en) * | 2007-11-30 | 2009-07-09 | Semiconductor Energy Lab Co Ltd | Method for manufacturing photoelectric conversion device |
| JP2010062302A (en) * | 2008-09-03 | 2010-03-18 | Mitsubishi Electric Corp | Thin-film solar cell and method of manufacturing the same |
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