JPS62192633U - - Google Patents

Info

Publication number
JPS62192633U
JPS62192633U JP8049386U JP8049386U JPS62192633U JP S62192633 U JPS62192633 U JP S62192633U JP 8049386 U JP8049386 U JP 8049386U JP 8049386 U JP8049386 U JP 8049386U JP S62192633 U JPS62192633 U JP S62192633U
Authority
JP
Japan
Prior art keywords
plasma
thin film
high frequency
frequency power
generate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8049386U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8049386U priority Critical patent/JPS62192633U/ja
Publication of JPS62192633U publication Critical patent/JPS62192633U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案のプラズマCVD装置を示す説
明図、第2図は従来のプラズマCVD装置を示す
説明図である。 1,10……反応室、2,12……反応室支持
台、3……マツチングボツクス、4,13……シ
ールド、7……RF導入管、8,17……導体、
11……整合手段。
FIG. 1 is an explanatory diagram showing a plasma CVD apparatus of the present invention, and FIG. 2 is an explanatory diagram showing a conventional plasma CVD apparatus. 1, 10... Reaction chamber, 2, 12... Reaction chamber support, 3... Matching box, 4, 13... Shield, 7... RF introduction tube, 8, 17... Conductor,
11... Matching means.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 薄膜生成用ガスを導入してプラズマの生成に伴
つて薄膜を生成する反応室と、このプラズマ生成
用に供給する高周波電力とプラズマを生成させる
のに要する高周波電力を実質上一致させるための
整合手段とを同一の導電性筐体中に収容せしめた
ことを特徴とするプラズマCVD装置。
A reaction chamber into which a thin film generating gas is introduced to generate a thin film as plasma is generated, and a matching means for substantially matching the high frequency power supplied for plasma generation and the high frequency power required to generate plasma. A plasma CVD apparatus characterized in that the two are housed in the same conductive casing.
JP8049386U 1986-05-27 1986-05-27 Pending JPS62192633U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8049386U JPS62192633U (en) 1986-05-27 1986-05-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8049386U JPS62192633U (en) 1986-05-27 1986-05-27

Publications (1)

Publication Number Publication Date
JPS62192633U true JPS62192633U (en) 1987-12-08

Family

ID=30931345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8049386U Pending JPS62192633U (en) 1986-05-27 1986-05-27

Country Status (1)

Country Link
JP (1) JPS62192633U (en)

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