JPH0252252U - - Google Patents
Info
- Publication number
- JPH0252252U JPH0252252U JP13246688U JP13246688U JPH0252252U JP H0252252 U JPH0252252 U JP H0252252U JP 13246688 U JP13246688 U JP 13246688U JP 13246688 U JP13246688 U JP 13246688U JP H0252252 U JPH0252252 U JP H0252252U
- Authority
- JP
- Japan
- Prior art keywords
- ion source
- source chamber
- microwave
- introduction tube
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000605 extraction Methods 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Description
第1図は本考案のイオン源の縦断面図。第2図
aはマイクロ波導入管の縦断面図、bはマイクロ
波導入管に於ける変換前の電気力線図、cはマイ
クロ波導入管に於ける変換後の電気力線図。第3
図は本考案のイオン源で多数枚の試料基板にイオ
ン照射するものを示す図。第4図は本考案のイオ
ン源のイオンビーム密度分布図。第5図は従来例
のマイクロ波イオン源の縦断面図。第6図は従来
例のマイクロ波イオン源の導波管内部の電気力線
図。第7図は従来のイオン源により多数枚の試料
基板にイオン照射するものを示す図。第8図は従
来のイオン源のイオンビーム密度分布図。
1……イオン源チヤンバ、2……コイル、3,
4……誘電体、5……導波管、6……引出電極、
7……絶縁フランジ、8……引出電極、9……誘
電体、10……磁力線、11……電気力線、12
……マイクロ波導入管、13……デイスク、14
……試料基板、15……傾斜誘電体、16……切
込み、20……マイクロ波発生器、21……端板
、26……加速電極、27……減速電極。
FIG. 1 is a longitudinal cross-sectional view of the ion source of the present invention. FIG. 2a is a longitudinal sectional view of the microwave introduction tube, b is an electric force line diagram before conversion in the microwave introduction tube, and FIG. 2c is an electric force line diagram after conversion in the microwave introduction tube. Third
The figure shows an ion source of the present invention that irradiates multiple sample substrates with ions. FIG. 4 is an ion beam density distribution diagram of the ion source of the present invention. FIG. 5 is a longitudinal sectional view of a conventional microwave ion source. FIG. 6 is a diagram of electric lines of force inside a waveguide of a conventional microwave ion source. FIG. 7 is a diagram showing ion irradiation onto a large number of sample substrates using a conventional ion source. FIG. 8 is an ion beam density distribution diagram of a conventional ion source. 1...Ion source chamber, 2...Coil, 3,
4... dielectric, 5... waveguide, 6... extraction electrode,
7... Insulating flange, 8... Extraction electrode, 9... Dielectric, 10... Lines of magnetic force, 11... Lines of electric force, 12
...Microwave introduction tube, 13...Disk, 14
... Sample substrate, 15 ... Inclined dielectric, 16 ... Notch, 20 ... Microwave generator, 21 ... End plate, 26 ... Acceleration electrode, 27 ... Deceleration electrode.
補正 平1.1.30
図面の簡単な説明を次のように補正する。
明細書第16頁第20行目「b」とあるのを「
第2図b」と訂正する。
明細書第17頁第2行目「c」とあるのを「第
2図c」と訂正する。
明細書第17頁第15行目と同頁16行目のあ
いだに「第9図は多数の基板を配置したデイスク
の平面図。」という文を挿入する。Amendment 1.1.30 Hei 1. The brief description of the drawing is amended as follows. The ``b'' on page 16, line 20 of the specification is changed to ``
Figure 2b” is corrected. The text "c" in the second line of page 17 of the specification is corrected to "Figure 2 c." The following sentence is inserted between the 15th line of page 17 of the specification and the 16th line of the same page: ``Figure 9 is a plan view of a disk on which a large number of substrates are arranged.''
Claims (1)
化する円筒状空間を形成するイオン源チヤンバ1
と、イオン源チヤンバ1にマイクロ波を供給する
マイクロ波発生器20と、イオン源チヤンバ1の
周りに設けられ電子のサイクロトロン周波数が少
なくともマイクロ波周波数にほぼ等しくなるよう
な軸方向の磁場を生ずるコイル2と、マイクロ波
発生器20からマイクロ波を導く導波管5と、導
波管5に対して絶縁フランジ7を介して接続され
イオン源チヤンバ1の中心軸線上に差込まれた円
筒形のマイクロ波導入管12と、マイクロ波導入
管12の終端部近くに設けられマイクロ波をイオ
ン源チヤンバ1の中へ導入するための円筒状の誘
電体9と、マイクロ波導入管12の終端部に設け
られる金属製の端板21と、イオン源チヤンバ1
の出口に設けられる円環状の引出電極8と、マイ
クロ波導入管12の内部に於て、マイクロ波発生
器20からのTE10モードのマイクロ波の電気
力線の方向に対し45°の角をなし、直線偏波を
円偏波に変換しTE01モードとする傾斜誘電体
15とよりなる事を特徴とするイオン源。 An ion source chamber 1 that forms a cylindrical space that can be evacuated and ionizes introduced gas.
a microwave generator 20 for supplying microwaves to the ion source chamber 1; and a coil disposed around the ion source chamber 1 for generating an axial magnetic field such that the cyclotron frequency of the electrons is at least approximately equal to the microwave frequency. 2, a waveguide 5 that guides microwaves from the microwave generator 20, and a cylindrical waveguide 5 connected to the waveguide 5 via an insulating flange 7 and inserted onto the central axis of the ion source chamber 1. a microwave introduction tube 12; a cylindrical dielectric 9 provided near the end of the microwave introduction tube 12 for introducing microwaves into the ion source chamber 1; and a cylindrical dielectric 9 provided near the end of the microwave introduction tube 12; The metal end plate 21 provided and the ion source chamber 1
The annular extraction electrode 8 provided at the outlet of the An ion source characterized by comprising: a tilted dielectric material 15 that converts linearly polarized waves into circularly polarized waves and creates a TE 01 mode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13246688U JPH0252252U (en) | 1988-10-11 | 1988-10-11 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13246688U JPH0252252U (en) | 1988-10-11 | 1988-10-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0252252U true JPH0252252U (en) | 1990-04-16 |
Family
ID=31389452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13246688U Pending JPH0252252U (en) | 1988-10-11 | 1988-10-11 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0252252U (en) |
-
1988
- 1988-10-11 JP JP13246688U patent/JPH0252252U/ja active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0740468B2 (en) | High frequency plasma generator | |
JPH0564407B2 (en) | ||
JPH0252252U (en) | ||
JP3454384B2 (en) | Ion beam generator and method | |
JPS6293834A (en) | Ion source | |
JPS63119198A (en) | Plasma generator | |
GB849565A (en) | Ion source using a high frequency field | |
US3973158A (en) | Device comprising an ion source in which the ions are accelerated in a direction perpendicular to a magnetic field of high intensity | |
JPS62291922A (en) | Plasma processor | |
JPH0284249U (en) | ||
JPS5740845A (en) | Ion beam generator | |
JPH03201703A (en) | Microwave antenna for generating plasma | |
JPS63171954U (en) | ||
JPH0447958Y2 (en) | ||
JPH0326099U (en) | ||
JPH0650110B2 (en) | RF ion source | |
JPS59121747A (en) | Method of ion milling | |
JPH0650109B2 (en) | RF ion source | |
JPH0262650U (en) | ||
JPS5741375A (en) | Ion treating device | |
JPH06140196A (en) | Pulse drawing type electron cyclotron resonance ion source | |
JPS6271146A (en) | High-frequency ion source | |
JPH05315096A (en) | Plasma generating device | |
JPH0636695A (en) | High-frequency ion source device | |
JP3086690B2 (en) | Ion source |