JPS62191867U - - Google Patents
Info
- Publication number
- JPS62191867U JPS62191867U JP7795286U JP7795286U JPS62191867U JP S62191867 U JPS62191867 U JP S62191867U JP 7795286 U JP7795286 U JP 7795286U JP 7795286 U JP7795286 U JP 7795286U JP S62191867 U JPS62191867 U JP S62191867U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- electrode side
- substrate
- rotating blade
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims 2
- 239000012528 membrane Substances 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案の一実施例として示した平行平
板型プラズマＣＶＤ装置の概略図、第２図は従来
の平行平板型プラズマＣＶＤ装置の概略を示した
ものである。
１：容器、２：高周波電源、３：高周波電極、
４：基板、５：空洞部、６：ガス導入管、７ａ，
７ｂ，７ｃ……：ガス噴出口、８：基板ホルダー
８、９：ヒータ、１０：排気口、１１：アースシ
ールド、１２：回転羽根、１３：回転軸、１４，
１５：軸受け、１６：高周波電圧遮断用カツプリ
ング、１７：回転駆動源。
FIG. 1 is a schematic diagram of a parallel plate type plasma CVD apparatus shown as an embodiment of the present invention, and FIG. 2 is a schematic diagram of a conventional parallel plate type plasma CVD apparatus. 1: Container, 2: High frequency power supply, 3: High frequency electrode,
4: Substrate, 5: Cavity, 6: Gas introduction pipe, 7a,
7b, 7c...: Gas outlet, 8: Substrate holder 8, 9: Heater, 10: Exhaust port, 11: Earth shield, 12: Rotating blade, 13: Rotating shaft, 14,
15: Bearing, 16: Coupling for cutting off high frequency voltage, 17: Rotary drive source.
Claims (1)
た電極間でプラズマを発生させ、一方の電極側か
ら他方の電極側へ送られた反応ガスに基づいた膜
を該他方の電極に取付けられた基板表面に形成す
る様に成した装置において、前記対向する電極間
に回転羽根を設けた事を特徴とする薄膜形成装置
。 Plasma is generated between electrodes placed oppositely in a suitably evacuated container, and a membrane based on the reactant gas is sent from one electrode side to the other electrode side. A thin film forming apparatus configured to form a thin film on the surface of a substrate, characterized in that a rotating blade is provided between the opposing electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7795286U JPS62191867U (en) | 1986-05-23 | 1986-05-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7795286U JPS62191867U (en) | 1986-05-23 | 1986-05-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62191867U true JPS62191867U (en) | 1987-12-05 |
Family
ID=30926445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7795286U Pending JPS62191867U (en) | 1986-05-23 | 1986-05-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62191867U (en) |
-
1986
- 1986-05-23 JP JP7795286U patent/JPS62191867U/ja active Pending