JPS6218560A - フオトマスクブランクとフオトマスク - Google Patents
フオトマスクブランクとフオトマスクInfo
- Publication number
- JPS6218560A JPS6218560A JP60158886A JP15888685A JPS6218560A JP S6218560 A JPS6218560 A JP S6218560A JP 60158886 A JP60158886 A JP 60158886A JP 15888685 A JP15888685 A JP 15888685A JP S6218560 A JPS6218560 A JP S6218560A
- Authority
- JP
- Japan
- Prior art keywords
- light
- shielding film
- film
- photomask
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 229910052742 iron Inorganic materials 0.000 claims abstract 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract 3
- 238000000059 patterning Methods 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims 1
- 238000001312 dry etching Methods 0.000 abstract description 17
- 238000005530 etching Methods 0.000 abstract description 14
- 238000001035 drying Methods 0.000 abstract description 8
- 238000004140 cleaning Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 18
- 238000001039 wet etching Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 210000002381 plasma Anatomy 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60158886A JPS6218560A (ja) | 1985-07-17 | 1985-07-17 | フオトマスクブランクとフオトマスク |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60158886A JPS6218560A (ja) | 1985-07-17 | 1985-07-17 | フオトマスクブランクとフオトマスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6218560A true JPS6218560A (ja) | 1987-01-27 |
| JPS646449B2 JPS646449B2 (enrdf_load_stackoverflow) | 1989-02-03 |
Family
ID=15681532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60158886A Granted JPS6218560A (ja) | 1985-07-17 | 1985-07-17 | フオトマスクブランクとフオトマスク |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6218560A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0418557A (ja) * | 1990-05-14 | 1992-01-22 | Toppan Printing Co Ltd | フォトマスクブランクおよびフォトマスクならびにフォトマスクの製造方法 |
| JP2002244274A (ja) * | 2001-02-13 | 2002-08-30 | Shin Etsu Chem Co Ltd | フォトマスクブランク、フォトマスク及びこれらの製造方法 |
| US6503669B2 (en) | 2000-02-16 | 2003-01-07 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and method of manufacture |
| JP2023099476A (ja) * | 2021-12-31 | 2023-07-13 | エスケー エンパルス カンパニー リミテッド | ブランクマスク及びそれを用いたフォトマスク |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6825164B1 (ja) * | 2019-03-01 | 2021-02-03 | 株式会社ブルックマンテクノロジ | 距離画像撮像装置および距離画像撮像装置による距離画像撮像方法 |
-
1985
- 1985-07-17 JP JP60158886A patent/JPS6218560A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0418557A (ja) * | 1990-05-14 | 1992-01-22 | Toppan Printing Co Ltd | フォトマスクブランクおよびフォトマスクならびにフォトマスクの製造方法 |
| US6503669B2 (en) | 2000-02-16 | 2003-01-07 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and method of manufacture |
| EP1130466A3 (en) * | 2000-02-16 | 2003-05-07 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and method of manufacture |
| JP2002244274A (ja) * | 2001-02-13 | 2002-08-30 | Shin Etsu Chem Co Ltd | フォトマスクブランク、フォトマスク及びこれらの製造方法 |
| JP2023099476A (ja) * | 2021-12-31 | 2023-07-13 | エスケー エンパルス カンパニー リミテッド | ブランクマスク及びそれを用いたフォトマスク |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS646449B2 (enrdf_load_stackoverflow) | 1989-02-03 |