JPS62184754A - 集束イオンビ−ム装置 - Google Patents

集束イオンビ−ム装置

Info

Publication number
JPS62184754A
JPS62184754A JP61025531A JP2553186A JPS62184754A JP S62184754 A JPS62184754 A JP S62184754A JP 61025531 A JP61025531 A JP 61025531A JP 2553186 A JP2553186 A JP 2553186A JP S62184754 A JPS62184754 A JP S62184754A
Authority
JP
Japan
Prior art keywords
voltage
lens
acceleration
center electrode
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61025531A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0535540B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Sawaragi
沢良木　宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP61025531A priority Critical patent/JPS62184754A/ja
Publication of JPS62184754A publication Critical patent/JPS62184754A/ja
Publication of JPH0535540B2 publication Critical patent/JPH0535540B2/ja
Granted legal-status Critical Current

Links

JP61025531A 1986-02-07 1986-02-07 集束イオンビ−ム装置 Granted JPS62184754A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61025531A JPS62184754A (ja) 1986-02-07 1986-02-07 集束イオンビ−ム装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61025531A JPS62184754A (ja) 1986-02-07 1986-02-07 集束イオンビ−ム装置

Publications (2)

Publication Number Publication Date
JPS62184754A true JPS62184754A (ja) 1987-08-13
JPH0535540B2 JPH0535540B2 (enrdf_load_stackoverflow) 1993-05-26

Family

ID=12168611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61025531A Granted JPS62184754A (ja) 1986-02-07 1986-02-07 集束イオンビ−ム装置

Country Status (1)

Country Link
JP (1) JPS62184754A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006014633A3 (en) * 2004-07-19 2006-08-17 Axcelis Tech Inc Electrostatic lens for ion beams
WO2008023558A1 (fr) * 2006-08-23 2008-02-28 Sii Nanotechnology Inc. Appareil à faisceau de particules chargées
JP2009140925A (ja) * 2007-12-05 2009-06-25 Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh 試料への負荷を減少させる高分解能ガスフィールドイオンカラム
JP2009272293A (ja) * 2008-04-11 2009-11-19 Hitachi High-Technologies Corp 集束イオンビーム装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7112809B2 (en) 2003-06-26 2006-09-26 Axcelis Technologies, Inc. Electrostatic lens for ion beams
WO2006014633A3 (en) * 2004-07-19 2006-08-17 Axcelis Tech Inc Electrostatic lens for ion beams
KR101176239B1 (ko) * 2004-07-19 2012-08-22 액셀리스 테크놀로지스, 인크. 이온 빔용 정전 렌즈
WO2008023558A1 (fr) * 2006-08-23 2008-02-28 Sii Nanotechnology Inc. Appareil à faisceau de particules chargées
JP2008053001A (ja) * 2006-08-23 2008-03-06 Sii Nanotechnology Inc 荷電粒子ビーム装置
US20090302233A1 (en) * 2006-08-23 2009-12-10 Takashi Ogawa Charged particle beam apparatus
TWI409846B (zh) * 2006-08-23 2013-09-21 Sii Nanotechnology Inc Charged particle beam device
JP2009140925A (ja) * 2007-12-05 2009-06-25 Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh 試料への負荷を減少させる高分解能ガスフィールドイオンカラム
JP2009272293A (ja) * 2008-04-11 2009-11-19 Hitachi High-Technologies Corp 集束イオンビーム装置

Also Published As

Publication number Publication date
JPH0535540B2 (enrdf_load_stackoverflow) 1993-05-26

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term