JPS62184754A - 集束イオンビ−ム装置 - Google Patents
集束イオンビ−ム装置Info
- Publication number
- JPS62184754A JPS62184754A JP61025531A JP2553186A JPS62184754A JP S62184754 A JPS62184754 A JP S62184754A JP 61025531 A JP61025531 A JP 61025531A JP 2553186 A JP2553186 A JP 2553186A JP S62184754 A JPS62184754 A JP S62184754A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- lens
- acceleration
- center electrode
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP61025531A JPS62184754A (ja) | 1986-02-07 | 1986-02-07 | 集束イオンビ−ム装置 | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP61025531A JPS62184754A (ja) | 1986-02-07 | 1986-02-07 | 集束イオンビ−ム装置 | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS62184754A true JPS62184754A (ja) | 1987-08-13 | 
| JPH0535540B2 JPH0535540B2 (OSRAM) | 1993-05-26 | 
Family
ID=12168611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP61025531A Granted JPS62184754A (ja) | 1986-02-07 | 1986-02-07 | 集束イオンビ−ム装置 | 
Country Status (1)
| Country | Link | 
|---|---|
| JP (1) | JPS62184754A (OSRAM) | 
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| WO2006014633A3 (en) * | 2004-07-19 | 2006-08-17 | Axcelis Tech Inc | Electrostatic lens for ion beams | 
| WO2008023558A1 (fr) * | 2006-08-23 | 2008-02-28 | Sii Nanotechnology Inc. | Appareil à faisceau de particules chargées | 
| JP2009140925A (ja) * | 2007-12-05 | 2009-06-25 | Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh | 試料への負荷を減少させる高分解能ガスフィールドイオンカラム | 
| JP2009272293A (ja) * | 2008-04-11 | 2009-11-19 | Hitachi High-Technologies Corp | 集束イオンビーム装置 | 
- 
        1986
        - 1986-02-07 JP JP61025531A patent/JPS62184754A/ja active Granted
 
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US7112809B2 (en) | 2003-06-26 | 2006-09-26 | Axcelis Technologies, Inc. | Electrostatic lens for ion beams | 
| WO2006014633A3 (en) * | 2004-07-19 | 2006-08-17 | Axcelis Tech Inc | Electrostatic lens for ion beams | 
| KR101176239B1 (ko) * | 2004-07-19 | 2012-08-22 | 액셀리스 테크놀로지스, 인크. | 이온 빔용 정전 렌즈 | 
| WO2008023558A1 (fr) * | 2006-08-23 | 2008-02-28 | Sii Nanotechnology Inc. | Appareil à faisceau de particules chargées | 
| JP2008053001A (ja) * | 2006-08-23 | 2008-03-06 | Sii Nanotechnology Inc | 荷電粒子ビーム装置 | 
| US20090302233A1 (en) * | 2006-08-23 | 2009-12-10 | Takashi Ogawa | Charged particle beam apparatus | 
| TWI409846B (zh) * | 2006-08-23 | 2013-09-21 | Sii Nanotechnology Inc | Charged particle beam device | 
| JP2009140925A (ja) * | 2007-12-05 | 2009-06-25 | Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh | 試料への負荷を減少させる高分解能ガスフィールドイオンカラム | 
| JP2009272293A (ja) * | 2008-04-11 | 2009-11-19 | Hitachi High-Technologies Corp | 集束イオンビーム装置 | 
Also Published As
| Publication number | Publication date | 
|---|---|
| JPH0535540B2 (OSRAM) | 1993-05-26 | 
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Legal Events
| Date | Code | Title | Description | 
|---|---|---|---|
| EXPY | Cancellation because of completion of term |