JPS62183433A - Production of active matrix liquid crystal display panel - Google Patents

Abstract

PURPOSE:To obtain a TFT-LCD panel free from a short-circuit defect with high yield without executing time-requiring complex work such as destatization in a panel forming process by removing a gate insulating film on a gate bus line end part after the end of a liquid crystal sealing process. CONSTITUTION:A gate electrode 2-1 is formed on a glass substrate 1 and an insulating film 3 and a semiconductor active layer 4 are formed on the electrode 2-1. Then, a TFT matrix board consisting of a drain electrode 5, a source electrode 6, a TFT protection film 7 such as polyimido, a drain bus line 8, a light shielding film 9, a contact metal 10, a display electrode 11, an orientation film 12-1, etc., is formed. But the etching of the gate insulating film 3 is not executed. Then, an opposite board 15 on which a color filter 14, a transparent electrode 13, an orientation film 12-2, etc., are formed is adhered to the TFT board 13 by a sealing material 13 and then liquid crystal 14 is sealed. Then, polarizing plates 16-1, 16-2 are adhered and finally the gate insulating film 3 on a gate bus line terminal part 2-2 is etched and removed.

Description

[Detailed Description of the Invention] [Summary] The present invention eliminates short-circuit defects caused by electrostatic breakdown of a gate insulating film between a gate bus line and a drain pass line in a method of manufacturing an active matrix liquid crystal display panel using thin film transistors. Therefore, the gate electrode is completely buried between the substrate and the gate insulating film until the final step of the display panel fabrication process, and the breakdown of the gate insulating film is prevented so that an electric field is less likely to be applied to the gate insulating film during the manufacturing process. This was prevented.

[Industrial application field]

The present invention relates to a method for manufacturing an active matrix liquid crystal display panel (LCD) using thin film transistors (TPT).

TPT-LCD is a display panel that is effective as a flat panel display that enables color and gradation display, but since it uses many fine patterning processes, it has a problem of high frame rate due to low yield. Therefore, there is a need for a manufacturing method that reduces the i-rate of short-circuit defects between pass lines, which is one of the important defects.

[Conventional technology]

FIG. 4 is a diagram showing the manufacturing process of a conventional TI'T-LCD panel. Next, the manufacturing process will be explained.

A gate 'M[2-1] is formed on a glass substrate 1, and a silicon oxide (SiN) or silicon oxide <5lotJ is formed on it.
etc., and hydrogenated amorphous silicon (a-
8i:H) or polysilicon or the like is formed into a film. Note that 2-2 is a terminal portion of a gate bus line, and a gate electrode 2-1 is connected to this gate bus line. (Al is missing the drain electrode L pole 5, the source electrode 6
, TPT protection such as polyimide [7, drain pass line 8, M light M9, contact metal 10, display electrode 11,
TFT consisting of polyimide% PVA orientation yx2-1 etc.
Fabricate a Matri-Six substrate.

During this step, the gate insulator IM3 on the gate bus line terminal portion 2-2 is removed. (bl color filter 1
4. The counter substrate 15 on which the transparent electrode 13, the alignment film 12-2, etc. are attached is attached to the TPT substrate 13 using the sealing material 13, and the liquid crystal 14 is sealed. After that, polarizing plate 16-1
．． Attach 16-2. (c) [Problems to be solved by the invention] In the conventional manufacturing method, the TFT matrix 9 is placed on the TFT substrate 1.
gate bus lie/terminal part 2 during the process of manufacturing
-2 was exposed, and then the liquid crystal encapsulation process was performed.

During these processes, there have long been operations that generate static electricity, as described below. That is, EB evaporation and plasma etching are steps during the TPT matrix fabrication process, and liquid crystal alignment treatment using 2 bits, counter substrate bonding, and polarizing plate bonding are steps during the liquid crystal filling process.

Conventionally, in order to prevent damage to the gate insulating film due to static electricity during such a process, pass lines are short-circuited during the process and then separated at the end. Or, you can work while removing static electricity without monitoring static electricity in each process.
A new method was needed.

However, such static electricity countermeasures have very poor workability and may not be sufficiently effective. [Means for Solving the Problems] The present invention does not solve the above-mentioned conventional problems. According to the present invention, in the method for manufacturing an IJ Fuchs crystal display panel, the gate insulating film on the end of the gate bus line is removed after the liquid crystal encapsulation process is completed. This is achieved by a method for manufacturing an active matrix liquid crystal display panel, which is characterized in that it is subsequently removed.

[Effect]

In the present invention, since the terminal portion of the gate bus line is buried until the final step, a voltage exceeding the unrestricted charge is not applied to the gate insulating film, so that short circuits due to electrostatic breakdown do not occur.

Further, in the step of exposing the terminal portion, the TFT portion is already surrounded by high-purity liquid crystal and protected from water, so even if a voltage is applied to the gate insulating film, it is unlikely to be destroyed.

〔Example〕

FIG. 3 shows a T P T -L CD according to an embodiment of the present invention.
It is a figure which shows the manufacturing process of a panel. Next (C manufacturing process will be explained.

A gate electrode 2-1 is formed on a glass substrate l, and an insulating film 3 such as silicon nitride (SiN) or silicon oxide (Stot3) and hydrogenated amorphous silicon (a-8i) are formed on it.
A semiconductor active layer 4 made of polysilicon or the like is formed.

Note that 2-2 is a terminal portion of the gate bus line/, to which this gate bus line/IC gate electrode 2-1 is connected. (a) Next, the drain electrode 5, the source electrode 6.゛TPT protection such as polyimide yX7, drain pass line 8.3
11 light m 9, funtact metal 10. The gate insulating film 3 is not etched as shown in FIG. 1 to form a TPT matrix substrate consisting of a pole 11, an alignment film 12-1 of polyimide, PVA, etc.

(bl) The counter substrate 15 on which the color filter 14, the transparent electrode 13, the alignment film 12-2, etc. have been assembled is pasted on the TPT substrate 13 using the sealant 13, and after the opening in which the liquid crystal 14 is sealed, the polarizing plate 16-1. 16-2. (c) Etch and remove the gate insulating film 3 on the gate bus line terminal section 2-2 to expose the gate terminal section 2-2. (
d) Figure 1 is a diagram showing the charging state during the rubbing process on the TPT matrix substrate manufactured by the manufacturing method of the present invention, and Figure 2 is a principle diagram explaining the influence of electrical charge on the gate insulating film. It is.

As shown in Fig. 2 (bl K), conventionally, the gate bus line/terminal section 2-2 is seated and has, for example, a ground potential, so that the charged type 1fr of the TPT 2 shown in Fig. 1 directly affects the gate insulating film. However, as shown in FIG. 2(a), in the present invention, the gate electrode is in a floating state, and the difference in charge between the TFT part and the terminal part of the gate insulating film has a capacitance C.
Since the voltage is applied only by dividing it into I and C, it becomes a small value, so there is no electrostatic damage even during the process of generating static electricity.

In addition, in the process of exposing the gate bus line terminal section 2-2, the TFT section is already surrounded by high-purity liquid crystal and protected from water, so even if voltage is applied to the gate insulating film, it is less likely to be destroyed. .

〔Effect of the invention〕

According to the present invention, TPT-L without short-circuit defects can be produced without having to perform operations such as removal during the panel manufacturing process that take two hours.
Since CD panels can be manufactured at a low yield, the cost of the panels can be reduced.

[Brief explanation of drawings]

FIG. 1 is a diagram showing the state of charging during the rubbing process on a TPT matrix substrate manufactured by the manufacturing method of the present invention; FIG. 2 is a diagram showing the influence of charge on the gate insulating film; FIG. 3 is a diagram showing a manufacturing process of a TPT-LCD panel according to an embodiment of the present invention, and FIG. 4 is a diagram showing a manufacturing process of a conventional TPT-LCD panel. In the figure, 1 is a glass substrate, 2-1 is a gate electrode, 2-
2 is the gate pass line/terminal section, 3 is the charge state of the TF matryfunu tlak from the game 1 month's senior 5 husband 1- Figure 15
(Fig. 2 to explain the change of electrical charge to the cassette membrane) Fig. 3

Claims (1)

[Claims] In a method for manufacturing an active matrix liquid crystal display panel using a thin film transistor matrix array, a gate insulating film (3) on an end portion (2-2) of a gate bus line;
A method for manufacturing an active matrix liquid crystal display panel, characterized in that the liquid crystal is removed after the liquid crystal encapsulation process is completed.