JPS62179744A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS62179744A
JPS62179744A JP2311586A JP2311586A JPS62179744A JP S62179744 A JPS62179744 A JP S62179744A JP 2311586 A JP2311586 A JP 2311586A JP 2311586 A JP2311586 A JP 2311586A JP S62179744 A JPS62179744 A JP S62179744A
Authority
JP
Japan
Prior art keywords
input
output buffer
cell
output
corner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2311586A
Other languages
Japanese (ja)
Inventor
Hiroyuki Yasuki
安木 宏行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2311586A priority Critical patent/JPS62179744A/en
Publication of JPS62179744A publication Critical patent/JPS62179744A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11898Input and output buffer/driver structures

Abstract

PURPOSE:To dispose input/output buffer cells on a corner not used so far by preparing the input/output buffer cells exclusively used at the corner of a semiconductor chip for the input/output buffer cells. CONSTITUTION:Input/output buffer cells 3 are disposed corresponding to external input/output pads 2 inside external input/output pads 2 provided on the peripheral side on a semiconductor chip 1 of an LSI of standard cell type. An exclusive input/output buffer cells 4 are disposed particularly at this corner. However, the characteristics are entirely the same as those of other input/output buffer cells 3. Thus, a semiconductor integrated circuit of standard cell type having exclusive input/output buffer cells which can be disposed in the dead space of the input/output buffer can be obtained.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体集積回路に係シ、特にスタンダード・
セル方式の半導体集積回路に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to semiconductor integrated circuits, and in particular to standard
This invention relates to a cell type semiconductor integrated circuit.

〔従来の技術〕[Conventional technology]

近年、オフコン、端末周辺装置、制御装置等への大規模
半導体集積回路(以後LSIと略記する)の普及社目ざ
ましい。これらのLSIは、多品種、少食生産の傾向が
強く、製造コストの低減、開発期間の短縮のためゲート
アレイによるセミカスタム化が進んだ。最近では、CA
D技術の進歩によシ、ゲートアレイよシも多機能なLS
Iを1チツプ化できるスタンダード・セル方式が利用さ
れ出した。
In recent years, the spread of large-scale semiconductor integrated circuits (hereinafter abbreviated as LSI) for office computers, terminal peripheral devices, control devices, etc. has been remarkable. These LSIs tend to be produced in large numbers and in small batches, and semi-customization using gate arrays has progressed in order to reduce manufacturing costs and shorten development periods. Recently, CA
Due to advances in D technology, gate arrays and other multifunctional LS
The standard cell system, which allows I to be integrated into a single chip, began to be used.

スタンダード・セル方式というの社、アらかじめ設計さ
れている標準のセルを組み合わせて所望のLSIを得る
方式である。これは、ゲートアレイのように、配線工程
のマスクだけで回路配線ができるものとは異なシ、セル
の配置から配線までフルカスタムLSIと同様にチップ
ごとにすべてのマスクが必要となる。したがって開発コ
スト開期間は長くなるが、アナログ拳セル、メモリー・
セルを搭載できるなどの特徴があシ、より多様なシステ
ムを一チップ上に実現でき、またゲートアレイと同等の
機能であれば、よシ小さいチップに実現できるため製造
コストが安くなる。
The standard cell system is a system in which a desired LSI is obtained by combining standard cells designed in advance. This is different from circuit wiring, such as a gate array, in which circuit wiring can be done using only a mask during the wiring process, and all masks are required for each chip, from cell placement to wiring, similar to a fully custom LSI. Therefore, the development cost and start-up period will be longer, but analog fist cells, memory and
It has features such as the ability to mount cells, making it possible to realize a more diverse range of systems on a single chip, and if it has the same functionality as a gate array, it can be realized on a much smaller chip, reducing manufacturing costs.

第2図は、スタンダード・セル方式の半導体集積回路の
平面図を示す一例である。第2図は、半導体チップ11
に外部入出力パッド12と、各入出力パッド12と接続
されている。入出力バッ7ア13と、所望の回路がCA
Dシステムによシ最適にレイアウトされる。内部論理セ
ル15とが配置されている。このスタンダード・セルに
は、ポリセル型とビルディング拳ブロック型があシ、前
者はセルの高さ方向が、ゲートアレイと同じように変わ
らないが、セルの幅は各セル異なる。後者は、セルの高
さ、幅とも1セルごとに異なる本のである。
FIG. 2 is an example showing a plan view of a standard cell type semiconductor integrated circuit. FIG. 2 shows the semiconductor chip 11
The external input/output pad 12 and each input/output pad 12 are connected to each other. The input/output buffer 13 and the desired circuit are
Optimally laid out by the D system. Internal logic cells 15 are arranged. There are two types of standard cells: a polycell type and a building block type. In the former, the height direction of the cell is the same as in the gate array, but the width of the cell is different for each cell. The latter is a book in which each cell has a different height and width.

ここで入出力バッファセルについて説明する。Here, the input/output buffer cell will be explained.

ゲートアレイでは、入力バッファセル、出力バッファセ
ルは一つのセルから構成されていることが普通であった
。スタンダード−セルでは、これをそれぞれ一つのセル
として準備しておくのでバッファセルの面積は、小さく
なり、バッファを多く設けることができる。また内部セ
ル領域の形状ならびに入出力本数にともない、入出力バ
ッファの形状が異なる何種類かのブロックの中から適切
なブロックを選ぶことにより、余分な領域を少しでも縮
めることが可能になシ、チップサイズの縮少につながる
In a gate array, an input buffer cell and an output buffer cell are usually composed of one cell. In the standard cell, each of these cells is prepared as one cell, so the area of the buffer cell becomes small and a large number of buffers can be provided. In addition, depending on the shape of the internal cell area and the number of input/output lines, by selecting an appropriate block from among several types of blocks with different input/output buffer shapes, it is possible to reduce the excess area as much as possible. This leads to a reduction in chip size.

第4図にスタンダード・セル方式の人出カバッファ配置
を示す。内部論理セル21の四辺に人出カハッファセル
22が配置されているが、半導体チップのコーナ部は利
用されていない領域すなわちデッドスペース23を生じ
ていた。
Figure 4 shows the layout of the standard cell type traffic buffer. Although the traffic buffer cells 22 are arranged on the four sides of the internal logic cell 21, the corners of the semiconductor chip have an unused area, that is, a dead space 23.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来のスタンダード・セル用の入出力バッファ
セルだけでは、多くの信号ピンを必要とする場合、内部
のゲート使用規模にかかわらず、チップサイズは、入出
力バッファセルの使用数、形状によって決まる。したが
って、同じ特性で縦長、横長のセルをうまく組み合わせ
てもチップサイズの縮小には限度があシ、更に半導体チ
ップのコーナ部については、有効に利用されておらず、
デッド・スペースが生じていた。また、入出力ビンが多
い場合、内部セルとバッファセルとの間の距離が長くな
ることがしばしば起夛、動作スピードの遅れを生じてい
た。
If the conventional standard cell input/output buffer cells mentioned above require many signal pins, the chip size is determined by the number and shape of the input/output buffer cells, regardless of the scale of internal gate usage. . Therefore, even if vertically long and horizontally long cells with the same characteristics are skillfully combined, there is a limit to the reduction in chip size, and furthermore, the corners of semiconductor chips are not used effectively.
There was dead space. Furthermore, when there are many input/output bins, the distance between the internal cells and the buffer cells often becomes long, resulting in a delay in operation speed.

本発明の目的は、上記の点に鑑みてなされたものであシ
、人出力バッファのデッド−スペースに配置できる専用
の入出力バッファセルを備えたスタンダード・セル方式
の半導体集積回路を提供することにある。
The object of the present invention has been made in view of the above points, and is to provide a standard cell type semiconductor integrated circuit equipped with a dedicated input/output buffer cell that can be placed in the dead space of a human output buffer. It is in.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の半導体集積回路は、半導体チップ上に設けられ
る内部論理セルと、半導体チップ上の周辺部処設けられ
る複数の入出力パッドと、内部論理セルと入出力パッド
とを接続する入出力バッファセルとを具備する半導体集
積回路において、半導体チップのコーナ部に配置される
コーナー専用入出力バッファセルを有することを特徴と
する。
The semiconductor integrated circuit of the present invention includes an internal logic cell provided on a semiconductor chip, a plurality of input/output pads provided in a peripheral area on the semiconductor chip, and an input/output buffer cell connecting the internal logic cell and the input/output pads. A semiconductor integrated circuit comprising: a corner-dedicated input/output buffer cell disposed at a corner of a semiconductor chip;

〔実施例〕〔Example〕

本発明の一実施例について図面を用いて説明する。 An embodiment of the present invention will be described with reference to the drawings.

第1図は、スタンゲートeセル方式からなるLSIで、
半導体チップ1上の周辺部に設けられた外部入出力パッ
ド2の内側に外部人出カパッド2に対応して、入出力バ
ッファセル3が配置されている。特に、コーナ部には専
用の入出力バッファセル4が配置される。しかし、特性
はまったく他の人出カバッファセル3と同じである。
Figure 1 shows an LSI using the stun gate e-cell system.
Input/output buffer cells 3 are arranged inside external input/output pads 2 provided on the periphery of semiconductor chip 1, corresponding to external output pads 2. In particular, dedicated input/output buffer cells 4 are arranged at the corners. However, the characteristics are exactly the same as other crowd buffer cells 3.

第3図(a)〜(d)に示すように何種類かの形状のコ
ーナ部専用入出力バッファセル群Aが準備されている。
As shown in FIGS. 3(a) to 3(d), several types of input/output buffer cell groups A dedicated to corner portions are prepared.

これらは、同じ特性で形状が異なっておシ、また同じ機
能であるが、第3図(e)〜(h) K示すように駆動
能力が入出力バッファセル群Aと異なる人出カバソファ
セル群Bがある。内部セル領域50面積が決ったところ
で第3図(a)〜(h)で示したブロックセルよシ最適
な形状特性のバッファをもってくることができる。また
最適な形状を選択する゛には、他の使用人、出力バッフ
ァセルの使用数本考慮される。すなわち、外部との信号
に必要な人出カバッファ数と内部論理セル領域の縦方向
及び横方向の長さからコーナ部以外の入出力バッファ・
セルもあらかじめ準備されている同じ特性で縦横比の異
なる数種類のバッファセルの中から選ばれ第5図に示す
ようにチップ面積を小さくすることができる。この場合
、ユーザは、今までと同じように設計でき、設計の自由
度が大きいことKかわシはない。
These have the same characteristics but different shapes, and have the same function, but as shown in FIGS. 3(e) to (h), the input/output buffer cell group B has a different driving capacity from the input/output buffer cell group A. There is. Once the area of the internal cell region 50 is determined, a buffer with optimal shape characteristics can be obtained from the block cells shown in FIGS. 3(a) to 3(h). In selecting the optimal shape, other users and the number of output buffer cells to be used are taken into consideration. In other words, considering the number of output buffers required for external signals and the vertical and horizontal lengths of the internal logic cell area, input/output buffers other than the corner areas are
The cell is also selected from several types of buffer cells prepared in advance that have the same characteristics but different aspect ratios, so that the chip area can be reduced as shown in FIG. In this case, the user can design in the same way as before, and there is no need for a large degree of freedom in design.

また、入出力ピンが多い場合でも内部論理セルと人出カ
バッファセルとの間に距離をおかなくなシ、動作スピー
ド面でも有利となる。
Further, even when there are many input/output pins, there is no distance between the internal logic cell and the output buffer cell, which is advantageous in terms of operation speed.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明によれば、人出カバッファセル
について半導体チップのコーナ部専用の人出力バッファ
セルを準備することKよシ、今まで使用していないコー
ナ部へ人出カバッファセルを配置することが可能となシ
、特に、内部のゲート使用率よシも必要外部信号ピンの
比率が高い場合、チップ面積の減少効果が大きく、この
ため製造コストが安くなシ、また生産性が上がるという
効果がある。その上スピード面でも有利である。
As described above, according to the present invention, it is not necessary to prepare a human output buffer cell exclusively for the corner portion of a semiconductor chip for the human output buffer cell. In particular, when the ratio of external signal pins is high, the effect of reducing the chip area is large, which reduces manufacturing costs and improves productivity. It has the effect of increasing Moreover, it is advantageous in terms of speed.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の一実施例のコーナ部専用入出力バッ
7ア・セルを使用してレイアウトしたチップの平面図、
第2図は、従来の人出カバッファセルだけを用いてレイ
アウトしたチップの平面図、第3図(al、(b)、(
C)、(d)は、同じ特性で形状の異なるコーナ部専用
入出力バッファセルの一例を示す平面図、第3図(e)
、(f)、(鱒、(h)はそれぞれ第3図(a)、(b
)、(C)、(d)と特性が異なる、他の同一特性で形
状の異なるコーナ部専用入出力バッファ拳セルの一例を
示す平面図、第4図は、従来の内部論理セル領域と人出
カバッファセルとの関係を示すレイアウト図、第5図は
、第4図と同じ内部論理セル領域で本発明のコーナ部専
用ブロックを利用した場合の内部セル領域と入出力バッ
ファの関係を示すレイアウト図である。 1.11・・・・・・半導体チップ、2,12・・・・
・・入出力ハラ)’、 3.13.22・・・・・・人
出カバッファセル、4・・・・・・コーナー専用入出力
バッファセル、5,15゜25・・・・・・内部論理セ
ル、14.23  ・・・・・・デッドスペース。 柴2図
FIG. 1 is a plan view of a chip laid out using corner-dedicated input/output buffer cells according to an embodiment of the present invention;
Figure 2 is a plan view of a chip laid out using only conventional outflow buffer cells, and Figures 3 (al, (b), (
C) and (d) are plan views showing an example of corner-dedicated input/output buffer cells with the same characteristics but different shapes; FIG. 3(e)
, (f), (trout, and (h) are respectively shown in Fig. 3 (a) and (b).
), (C), and (d), and a plan view showing an example of a corner dedicated input/output buffer cell with the same characteristics and a different shape. FIG. 5, a layout diagram showing the relationship with the output buffer cell, shows the relationship between the internal cell area and the input/output buffer when the corner dedicated block of the present invention is used in the same internal logic cell area as in FIG. 4. It is a layout diagram. 1.11...semiconductor chip, 2,12...
・・Input/output buffer cell)', 3.13.22・・・・・・・・・・Passenger buffer cell, 4・・・Corner dedicated input/output buffer cell, 5, 15° 25・・・・・・Internal logic cell, 14.23 ... Dead space. Shiba 2

Claims (2)

【特許請求の範囲】[Claims] (1)半導体チップ上に設けられる内部論理セルと、該
半導体チップ上の周辺部に設けられる複数の入出力パッ
ドと、該内部論理セルと該入出力パッドとを接続する入
出力バッファセルとを具備する半導体集積回路において
、前記入出力バッファセルのうち半導体チップのコーナ
部に配置されるコーナー専用入出力バッファセルを有す
ることを特徴とする半導体集積回路。
(1) An internal logic cell provided on a semiconductor chip, a plurality of input/output pads provided on the periphery of the semiconductor chip, and an input/output buffer cell connecting the internal logic cell and the input/output pad. 1. A semiconductor integrated circuit comprising: a corner-dedicated input/output buffer cell arranged at a corner of a semiconductor chip among the input/output buffer cells.
(2)前記コーナー専用入出力バッファセルは複数の形
状及び複数の特性を有するセルであることを特徴とする
特許請求の範囲第1項記載の半導体集積回路。
(2) The semiconductor integrated circuit according to claim 1, wherein the corner-dedicated input/output buffer cell is a cell having a plurality of shapes and a plurality of characteristics.
JP2311586A 1986-02-04 1986-02-04 Semiconductor integrated circuit Pending JPS62179744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2311586A JPS62179744A (en) 1986-02-04 1986-02-04 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2311586A JPS62179744A (en) 1986-02-04 1986-02-04 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS62179744A true JPS62179744A (en) 1987-08-06

Family

ID=12101485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2311586A Pending JPS62179744A (en) 1986-02-04 1986-02-04 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS62179744A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0660410A2 (en) * 1993-11-10 1995-06-28 Texas Instruments Incorporated Improvements in or relating to multi-slot input/outputs
US6013924A (en) * 1996-12-25 2000-01-11 Fujitsu Limited Semiconductor integrated circuit and method for making wiring layout of semiconductor integrated circuit
WO2010125619A1 (en) * 2009-04-27 2010-11-04 パナソニック株式会社 Semiconductor integrated circuit chip and layout method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0660410A2 (en) * 1993-11-10 1995-06-28 Texas Instruments Incorporated Improvements in or relating to multi-slot input/outputs
US6013924A (en) * 1996-12-25 2000-01-11 Fujitsu Limited Semiconductor integrated circuit and method for making wiring layout of semiconductor integrated circuit
WO2010125619A1 (en) * 2009-04-27 2010-11-04 パナソニック株式会社 Semiconductor integrated circuit chip and layout method thereof
JP2010258298A (en) * 2009-04-27 2010-11-11 Panasonic Corp Semiconductor integrated circuit chip and layout method thereof
US8466497B2 (en) 2009-04-27 2013-06-18 Panasonic Corporation Semiconductor integrated circuit chip and layout method for the same
US8598631B2 (en) 2009-04-27 2013-12-03 Panasonic Corporation Semiconductor integrated circuit chip and layout method for the same

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