JPS62176151A - Resin sealed type semiconductor device - Google Patents

Abstract

PURPOSE:To obtain excellent visibility of laser marks and to eliminate adverse effects of infrared rays on a semiconductor element completely, by sealing the semiconductor element by using a resin composition, whose essential components are a compound having an epoxy resin, carbon black and an azo group and an inorganic filler. CONSTITUTION:As an epoxy resin, ordinarily used materials can be widely included as long as the materials are a compound, which includes at least two or more epoxy resins in its molecule. As carbon black, any product, which is manufactured by a thermal decomposition method, incomplete combustion method and the like, can be widely used. It is desirable to have a compounding ratio so that 0.01-10wt% carbon black is included in the resin composition. As a compound having an azo group used as the second coloring agent, there is no special restriction as long as the compound has one or more azo groups in the molecule. One or more kinds are mixed and used. In the case of a compound especially including metal, the compound is effective in improving the heat resistance of the resin composition. As the inorganic filler, especially silica powder and alumina are favorably used. It is desirable to have the compounding ratio of 25-90wt% for the resin composition.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a resin-sealed semiconductor device that has excellent laser mark clarity and has no adverse effect of infrared rays on semiconductor elements.

(Prior Art) Conventionally, electronic components such as diodes, transistors, and integrated circuits have been sealed using a thermosetting resin. This resin sealing is widely put into practical use because it is economically advantageous compared to hermetic sealing methods using glass, metal, or ceramic. As a sealing resin,
Among thermosetting resins, epoxy resins are most commonly used in terms of reliability and cost. Hardening agents such as acid anhydrides, aromatic amines, and novolak-type phenolic resins are used in epoxy resins. Among these, epoxy resins that use novolak type phenolic resin as a curing agent have excellent moldability and moisture resistance, are non-toxic, and are inexpensive compared to those that use other curing agents, so they are used as semiconductor encapsulation materials. It is widely used as Furthermore, in order to mark the product name and manufacturer's name on the surface of resin-sealed semiconductor products (diodes, transistors, integrated circuits), a method of stamping with thermosetting ink is currently generally employed.

(Problems to be Solved by the Invention) However, marks made with this ink have the disadvantage that they are relatively easily erased with a specific solvent and are susceptible to friction. In order to compensate for these drawbacks and to improve the efficiency of the marking process, laser marking using a laser such as carbon dioxide gas has begun to be performed.

However, with a sealing resin that uses only carbon black as a coloring agent, the clarity of the mark is inferior to that of ink marking when laser marking is performed, and with a sealing resin that uses only dye as a coloring agent, the laser mark is clearly marked. Although it has excellent strength, it transmits infrared rays and causes semiconductor products to malfunction. SUMMARY OF THE INVENTION An object of the present invention is to provide a resin-sealed semiconductor device which solves the above-mentioned drawbacks, has excellent laser mark clarity, and has no adverse effect of infrared rays on semiconductor elements.

[Structure of the invention] (Means and effects for solving the problem) As a result of extensive research to achieve the above object, the present inventors have developed a coloring agent containing carbon black and a compound having an azo group. discovered that if a semiconductor element is encapsulated using a resin composition that provides excellent laser mark clarity and prevents malfunction of the semiconductor element due to transmission of infrared rays,
This has led to the completion of the present invention. That is, the present invention seals a semiconductor element using a resin composition whose essential components are (A) an epoxy resin, (B) carbon black, (C) a compound having an azo group, and (D) an inorganic filler. This is a resin-sealed semiconductor device characterized by the following.

The epoxy resin (A) used in the present invention is not particularly limited in molecular structure, molecular weight, etc., as long as it is a compound having at least two epoxy groups in its molecule, and includes a wide range of commonly used epoxy resins. be able to.
Examples include aromatic resins such as bisphenol type, alicyclic resins such as cyclohexane derivatives, and epoxy novolak resins represented by the following general formula.

(In the formula, R1 represents a hydrogen atom, a halogen atom, or an alkyl group, R2 represents a hydrogen atom or an alkyl group, and n represents an integer of 1 or more.) These epoxy resins may be used alone or in combination of two or more. I can do it.

There are no particular limitations on the curing agent used in the epoxy resin, and acid anhydrides, aromatic amines, novolac type phenolic resins, and the like can be widely used. Among these curing agents, novolac type phenolic resins are preferably used. In this case, the equivalent ratio [(a)/(b)] between epoxy J3 (a) of the epoxy resin and the phenolic hydroxyl group (b) of the novolac type phenolic resin is within the range of 0.1 to 1.0. desirable. If the equivalent ratio is less than 0.1 or more than 10, the moisture resistance, molding workability, and electrical properties of the cured product will deteriorate, and either case is not preferred.

The carbon black (B) used as the first colorant in the present invention is produced by a thermal decomposition method (acetylene black method, etc.)
A wide variety of materials can be used, including those produced by incomplete combustion methods (channel method, etc.).
The blending ratio of carbon black is preferably 0.10 to 10% by weight based on the resin composition used in the present invention. If the amount is less than 0.10%, it will not be effective in blocking infrared rays and may cause malfunction of the semiconductor device, which is not preferable, and if it exceeds 1%, the laser mark property will deteriorate, making it unsuitable for practical use.

The azo group-containing compound (C) used as the second colorant in the present invention is not particularly limited in molecular structure, molecular weight, etc., as long as it has one or more azo groups in its molecule. These include compounds such as 1
Use seeds or a mixture of two or more. In particular, compounds containing total bending are effective in improving the heat resistance of the resin composition.

This compound is preferably one that does not contain a halogen atom such as chlorine or bromine in its molecule. The compounding ratio of the compound having an azo group is as follows with respect to the resin composition used in the present invention:
It is desirable to contain 0.01 to 10% by weight. If the blending amount is less than 0.01 ffNtt%, it will not be effective in improving the clarity of the laser mark, and if it exceeds 10% by weight, bulk will increase and moldability will be poor, making it unsuitable for practical use.

In the present invention, the most important thing is to blend carbon black with a compound having an azo group, which provides excellent laser mark nail brightness, prevents the transmission of infrared rays, and prevents malfunction of semiconductor devices. It is possible.

Inorganic fillers (D) used in the present invention include silica powder, alumina, antimony trioxide, talc, calcium carbonate, titanium, white, clay, mica, red iron,
Glass fibers, carbon fibers, etc. may be mentioned, and silica powder and alumina are particularly used with a preferable ratio. The blending ratio of the inorganic filler and filler is preferably 25 to 90% by weight based on the resin composition. If it is less than 25% by weight, moisture resistance,
It has no effect on heat resistance, mechanical properties, or moldability, and if it exceeds 90% by weight, bulk increases and moldability is poor, making it unsuitable for practical use.

The resin composition used in the present invention contains an epoxy resin, carbon black, a compound having an azo group, and an inorganic filler as essential components, but if necessary, natural waxes, metal salts of linear fatty acids, acid amides, etc. , esters, paraffins, etc., flame retardants such as chlorinated paraffin, bromotoluene, hexabromobenzene, antimony trioxide, colorants such as red iron, silane coupling agents, etc. may be added as appropriate. can not use.

A general method for preparing the resin composition used in the present invention as a molding material is to select epoxy resin, curing agent, carbon black, compound having an azo group, inorganic filler, and others in a predetermined composition ratio. After the raw materials are thoroughly and uniformly mixed using a mixer or the like, they are further melted and mixed using heat (coal), or mixed using a kneader, etc., and then cooled and solidified and pulverized to an appropriate size to obtain a molding material.

The obtained molding material can be directly used for injection molding or
-Manufacturing resin-sealed semiconductor devices by applying transfer molding.

(Examples) The present invention will be specifically explained by examples, but the present invention is not limited to the following examples.

In the Examples and Comparative Examples below, "%" means "% by weight".

Example 1 Talesol novolak epoxy resin (epoxy weight M2
15) 18% novolac type phenolic resin (phenol 11107) 12%, carbon black 0.2
0%, 1% of the compound of the following formula and 68.8% of silica powder were mixed at room temperature, and 90%
After kneading at ~95°C, cooling, and pulverizing, a molding material was obtained. The obtained molding material was tabletted and injected into a mold that had been preheated and heated to 170°C by transfer molding, and the semiconductor element was sealed and cured to manufacture a resin-sealed semiconductor device. This device was tested for laser mark clarity, infrared transmittance, malfunction, mechanical strength, moisture resistance, etc.

The results are shown in Table 1.

Example 2 Talesol novolac epoxy resin (epoxidized fi
215) 16%, novolac type phenolic resin, 13.5% carbon black, 0.5% of the compound of the following formula and 69.5% of silica powder were added in the same manner as in Example 1. A resin-sealed semiconductor device was manufactured in the same manner using 15J of molding material. Various tests similar to those in Example 1 were conducted on this device. The results are shown in Table 1.

Comparative Example 1 Talesol novolak epoxy resin (epoxidized FJ
215) 20%, novolak type phenolic resin (phenol equivalent ffi 10?) 10%, compound 1 of the following formula
% and 69% of silica powder to obtain a molding material in the same manner as in Example 1, and using it, a resin-sealed semiconductor device was manufactured. Various tests similar to those in Example 1 were conducted on this device. The results are shown in Table 1.

Comparative Example 2 Talesol novolac epoxy resin (epoxidized ffi
215) A molding material was obtained in the same manner as in Example 1 by adding 20% novolak type phenol resin (phenol ffi 107), 1% carbon black, and 69% silica powder, and using it to fabricate a resin-sealed semiconductor device. was manufactured. The opening properties of this device were tested in the same manner as in Example 1, and the results are shown in Table 1.

Table 1 *1: Semiconductor elements are manufactured using resin compositions at 170°C.
Transfer molding was carried out for 1 minute, followed by curing at 180° C. for 8 hours to produce a resin-sealed semiconductor device. Laser marks were made using a carbon dioxide laser on the 100 devices thus obtained, and the sharpness was visually evaluated. ◎・
...Very clear, O...Clear, ×...Unclear*2
: Resin-sealed semiconductor devices were placed in constant temperature baths at -65° C. and +200° C. for 30 minutes each, and resin cracks were investigated after 500 cycles were repeated.

*3: Using the resin composition, a semiconductor product having two aluminum wirings was lance-formed at 170°C for 3 minutes, and then cured at 180°C for 8 hours. 120℃ for 100 resin-sealed semiconductor devices obtained in this way.
A moisture resistance test was conducted in high-pressure steam, and the time required for 50% wire breakage (defect occurrence) due to aluminum corrosion was evaluated.

[Effects of the Invention] The resin-sealed semiconductor device of the present invention has excellent laser mark clarity and infrared transmittance of zero percent by blending carbon black and an azo group-containing compound into the sealing resin. Therefore, it is a highly reliable device that can prevent malfunctions of semiconductor elements due to infrared rays and has excellent moisture resistance and heat resistance, and is industrially useful.

Patent applicant: Toshiba Chemical Corporation For procedural amendments (voluntary) February 25, 1986

Claims (1)

[Claims] 1. A semiconductor device is sealed using a resin composition containing (A) an epoxy resin, (B) carbon black, (C) a compound having an azo group, and (D) an inorganic filler as essential components. A resin-sealed semiconductor device characterized in that it is sealed. 2 The resin composition contains (B) carbon black by 0.10
~10% by weight, (C) 0.01% of the compound having an azo group
~10% by weight, (D) 25-90% by weight of inorganic filler
A resin-sealed semiconductor device according to claim 1.