JPS62176151A - Resin sealed type semiconductor device - Google Patents
Resin sealed type semiconductor deviceInfo
- Publication number
- JPS62176151A JPS62176151A JP61016852A JP1685286A JPS62176151A JP S62176151 A JPS62176151 A JP S62176151A JP 61016852 A JP61016852 A JP 61016852A JP 1685286 A JP1685286 A JP 1685286A JP S62176151 A JPS62176151 A JP S62176151A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- resin
- resin composition
- carbon black
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 229920005989 resin Polymers 0.000 title description 12
- 239000011347 resin Substances 0.000 title description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- 239000006229 carbon black Substances 0.000 claims abstract description 17
- 239000003822 epoxy resin Substances 0.000 claims abstract description 17
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 17
- 239000011342 resin composition Substances 0.000 claims abstract description 16
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 claims abstract description 14
- 239000011256 inorganic filler Substances 0.000 claims abstract description 9
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 239000003086 colorant Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 239000000843 powder Substances 0.000 abstract description 7
- 238000007789 sealing Methods 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 238000013329 compounding Methods 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000009841 combustion method Methods 0.000 abstract description 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 2
- 230000002411 adverse Effects 0.000 abstract 1
- 239000012778 molding material Substances 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 6
- 230000007257 malfunction Effects 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 239000010680 novolac-type phenolic resin Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000010330 laser marking Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 231100000989 no adverse effect Toxicity 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- QSSXJPIWXQTSIX-UHFFFAOYSA-N 1-bromo-2-methylbenzene Chemical compound CC1=CC=CC=C1Br QSSXJPIWXQTSIX-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000872198 Serjania polyphylla Species 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 125000000113 cyclohexyl group Chemical class [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
本発明は、レザーマーク鮮明度に優れ、半導体素子に赤
外線の悪影響を全く及ぼさない樹脂封止型半導体装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a resin-sealed semiconductor device that has excellent laser mark clarity and has no adverse effect of infrared rays on semiconductor elements.
(従来の技術)
従来、ダイオード、トランジスタ、集積回路等の電子部
品では、熱硬化性樹脂を用いて封止する方法が行われて
きた。 この樹脂封止は、ガラス、金属、セラミックを
用いたハーメチックシール方式に比較して経済的に有利
なために広く実用化されている。 封止用樹脂として、
熱硬化性樹脂の中でも信頼性および価格の点からエポキ
シ樹脂が最も一般的に用いられている。 エポキシ樹脂
には酸無水物、芳香族アミン、ノボラック型フェノール
樹脂等の硬化剤が用いられている。 これらの中でノボ
ラック型フェノール樹脂を硬化剤としたエポキシ樹脂は
、他の硬化剤を使用したものに比べて、成形性、耐湿性
に優れ、毒性がなく、かつ安価であるため半導体封止材
料として広く用いられている。 また樹脂封止した半導
体製品(ダイオード、トランジスタ、集積回路)の表面
に製品名や製造者名をマークするのに、現在熱硬化性イ
ンキで捺印する方法が一般に採用されている。(Prior Art) Conventionally, electronic components such as diodes, transistors, and integrated circuits have been sealed using a thermosetting resin. This resin sealing is widely put into practical use because it is economically advantageous compared to hermetic sealing methods using glass, metal, or ceramic. As a sealing resin,
Among thermosetting resins, epoxy resins are most commonly used in terms of reliability and cost. Hardening agents such as acid anhydrides, aromatic amines, and novolak-type phenolic resins are used in epoxy resins. Among these, epoxy resins that use novolak type phenolic resin as a curing agent have excellent moldability and moisture resistance, are non-toxic, and are inexpensive compared to those that use other curing agents, so they are used as semiconductor encapsulation materials. It is widely used as Furthermore, in order to mark the product name and manufacturer's name on the surface of resin-sealed semiconductor products (diodes, transistors, integrated circuits), a method of stamping with thermosetting ink is currently generally employed.
(発明が解決しようとする問題点)
しかし、このインキによるマークは、有様溶剤で比較的
容易に消え、また摩擦に弱いという欠点がある。 これ
らの欠点を補い、かつマーキング工程の効率化を図るた
めに炭酸ガス等のレーザーを用いたレーザーマークが行
われるようになった。(Problems to be Solved by the Invention) However, marks made with this ink have the disadvantage that they are relatively easily erased with a specific solvent and are susceptible to friction. In order to compensate for these drawbacks and to improve the efficiency of the marking process, laser marking using a laser such as carbon dioxide gas has begun to be performed.
しかしながら、着色剤にカーボンブラックのみを使用し
た封止樹脂では、レーザーマークを行った場合マークの
鮮明度がインキマーキング法に劣り、また着色剤に染料
のみを用いた封止樹脂では、レーザーマーク鮮明度が優
れているものの赤外線を透過し半導体製品を誤動作させ
る原因となっていた。 本発明は以上の欠点を解決した
レーザーマーク鮮明度に優れ、かつ半導体素子に赤外線
の悪影響を全く及ぼさない樹脂封止型半導体装置を提供
することを目的としている。However, with a sealing resin that uses only carbon black as a coloring agent, the clarity of the mark is inferior to that of ink marking when laser marking is performed, and with a sealing resin that uses only dye as a coloring agent, the laser mark is clearly marked. Although it has excellent strength, it transmits infrared rays and causes semiconductor products to malfunction. SUMMARY OF THE INVENTION An object of the present invention is to provide a resin-sealed semiconductor device which solves the above-mentioned drawbacks, has excellent laser mark clarity, and has no adverse effect of infrared rays on semiconductor elements.
[発明の構成]
(問題点を解決するための手段および作用)本発明者ら
は、上記の目的を達成すべく鋭意研究を重ねた結果、着
色剤にカーボンブラックならびにアゾ基を有する化合物
を含有する樹脂組成物を用いて、半導体素子を封止すれ
ば、レーザーマーク鮮明度に優れ、かつ赤外線の透過に
よる半導体素子の誤動作を防止できることを見いだし、
本発明を完成するに至ったものである。 即ち本発明は
、
(A)エポキシ樹脂、
(B)カーボンブラック、
(C)アゾ基を有する化合物及び
(D)無機質充填剤
を必須成分とする樹脂組成物を用いて、半導体素子を封
止することを特徴とする樹脂封止型半導体装置である。[Structure of the invention] (Means and effects for solving the problem) As a result of extensive research to achieve the above object, the present inventors have developed a coloring agent containing carbon black and a compound having an azo group. discovered that if a semiconductor element is encapsulated using a resin composition that provides excellent laser mark clarity and prevents malfunction of the semiconductor element due to transmission of infrared rays,
This has led to the completion of the present invention. That is, the present invention seals a semiconductor element using a resin composition whose essential components are (A) an epoxy resin, (B) carbon black, (C) a compound having an azo group, and (D) an inorganic filler. This is a resin-sealed semiconductor device characterized by the following.
本発明に用いる(A)エポキシ樹脂としては、その分子
中にエポキシ基を少なくとも2個以上有する化合物であ
る限り、分子構造、分子量などに特に制限はなく、一般
に使用されているものを広く包含することができる。
例えばビスフェノール型の芳香族系、シクロヘキサン誘
導体等の脂環族系、さらに次の一般式で示されるエポキ
シノボラック系等の樹脂が挙げられる。The epoxy resin (A) used in the present invention is not particularly limited in molecular structure, molecular weight, etc., as long as it is a compound having at least two epoxy groups in its molecule, and includes a wide range of commonly used epoxy resins. be able to.
Examples include aromatic resins such as bisphenol type, alicyclic resins such as cyclohexane derivatives, and epoxy novolak resins represented by the following general formula.
(式中、R1は水素原子、ハロゲン原子又はアルキル基
を、R2は水素原子又はアルキル基を、nは1以上の整
数を表す)これらのエポキシ樹脂は1種又は2種以上混
合して用いることができる。(In the formula, R1 represents a hydrogen atom, a halogen atom, or an alkyl group, R2 represents a hydrogen atom or an alkyl group, and n represents an integer of 1 or more.) These epoxy resins may be used alone or in combination of two or more. I can do it.
エポキシ樹脂に用いる硬化剤には特に限定はなく、酸無
水物、芳香族アミン、ノボラック型フェノール樹脂等を
広く使用することかできる。 これらの硬化剤の中でも
ノボラック型フェノール樹脂が好んで使用される。 こ
の場合エポキシ樹脂のエポキシJ3(a)とノボラック
型フェノール樹脂のフェノール性水酸基(b )との当
量比[(a)/(b ) ]が0.1〜1,0の範囲内
であることが望ましい。 当量比が0.1未満若しくは
10を超えると耐湿性、成形作業性及び硬化物の電気特
性が悪くなり、いずれの場合も好ましくない。There are no particular limitations on the curing agent used in the epoxy resin, and acid anhydrides, aromatic amines, novolac type phenolic resins, and the like can be widely used. Among these curing agents, novolac type phenolic resins are preferably used. In this case, the equivalent ratio [(a)/(b)] between epoxy J3 (a) of the epoxy resin and the phenolic hydroxyl group (b) of the novolac type phenolic resin is within the range of 0.1 to 1.0. desirable. If the equivalent ratio is less than 0.1 or more than 10, the moisture resistance, molding workability, and electrical properties of the cured product will deteriorate, and either case is not preferred.
本発明で第一の着色剤として用いる(B)カーボンブラ
ックとしては、熱分解法(アセチレンブラック法など)
、不完全燃焼法(チャンネル法など)等で製造されるい
ずれのものでも広く包含して使用することができる。
カーボンブラックの配合割合は、本発明に用いる樹脂組
成物に対して0.10〜10重M%含有することが好ま
しい。 配合量が0.10踵量%未満では、赤外線の遮
断に効果がなく半導体装置の誤動作の原因となり、好ま
しくないし、また1幡1%を超えるとレーザーマーク性
が悪くなり、実用に適さない。The carbon black (B) used as the first colorant in the present invention is produced by a thermal decomposition method (acetylene black method, etc.)
A wide variety of materials can be used, including those produced by incomplete combustion methods (channel method, etc.).
The blending ratio of carbon black is preferably 0.10 to 10% by weight based on the resin composition used in the present invention. If the amount is less than 0.10%, it will not be effective in blocking infrared rays and may cause malfunction of the semiconductor device, which is not preferable, and if it exceeds 1%, the laser mark property will deteriorate, making it unsuitable for practical use.
本発明で第二の着色剤として用いる(C)アゾ基を有す
る化合物としては、その分子中に 1個以上のアゾ基を
有する化合物である限り、分子構造、分子量などに特に
制限はなく、次のような化合物が挙げられ、これらは1
種又は2種以上混合して使用する。 特に全屈を含む化
合物の場合は、樹脂組成物の耐熱性向上に有効である。The azo group-containing compound (C) used as the second colorant in the present invention is not particularly limited in molecular structure, molecular weight, etc., as long as it has one or more azo groups in its molecule. These include compounds such as 1
Use seeds or a mixture of two or more. In particular, compounds containing total bending are effective in improving the heat resistance of the resin composition.
この化合物としては、分子中に塩素や臭素などハロゲン
原子を含まないものが望ましい。 アゾ基を有する化合
物の配合割合は、本発明に用いる樹脂組成物に対して、
0.01〜10重量%含有することが望ましい。 配合
量が0.01 ffNtt%未満では、レーザーマーク
鮮明度向上に効果なく、また10重量%を超えるとかさ
ぼりが大きくなり、成形性が悪く実用に適さず好ましく
ない。This compound is preferably one that does not contain a halogen atom such as chlorine or bromine in its molecule. The compounding ratio of the compound having an azo group is as follows with respect to the resin composition used in the present invention:
It is desirable to contain 0.01 to 10% by weight. If the blending amount is less than 0.01 ffNtt%, it will not be effective in improving the clarity of the laser mark, and if it exceeds 10% by weight, bulk will increase and moldability will be poor, making it unsuitable for practical use.
本発明でカーボンブラックとアゾ基を有する化合物とを
配合することが最も重要なことであり、これによってレ
ーザーマーク釘明度に優れ、かつ赤外線の透過を防止し
、半導体装置の誤動作を防止することができるものであ
る。In the present invention, the most important thing is to blend carbon black with a compound having an azo group, which provides excellent laser mark nail brightness, prevents the transmission of infrared rays, and prevents malfunction of semiconductor devices. It is possible.
本発明に用いる(D)無機質充填剤としては、シリカ粉
末、アルミナ、三酸化アンチモン、タルク、炭酸カルシ
ウム、チタン、ホワイト、クレー、マイカ、ベンガラ、
ガラス繊維、炭素繊維等が挙げられ、特にシリカ粉末お
よびアルミナが好/Vで使用される。 無機質充1眞剤
の配合割合は、樹脂組成物に対して25〜90重量%で
あることが好ましい。 25重間%未満では、耐湿性、
耐熱性及び機械的特性、更に成形性に効果なく、90重
量%を超えるとかさぼりが大きくなり、成形性が悪く実
用に適さない。Inorganic fillers (D) used in the present invention include silica powder, alumina, antimony trioxide, talc, calcium carbonate, titanium, white, clay, mica, red iron,
Glass fibers, carbon fibers, etc. may be mentioned, and silica powder and alumina are particularly used with a preferable ratio. The blending ratio of the inorganic filler and filler is preferably 25 to 90% by weight based on the resin composition. If it is less than 25% by weight, moisture resistance,
It has no effect on heat resistance, mechanical properties, or moldability, and if it exceeds 90% by weight, bulk increases and moldability is poor, making it unsuitable for practical use.
本発明に用いる樹脂組成物は、エポキシ樹脂、カーボン
ブラック、アゾ基を有する化合物および無機質充填剤を
必須成分とするが、必要に応じ、例えば天然ワックス類
、直鎖脂肪酸の金属塩、酸アミド類、エステル類、パラ
フィン類などの離型剤、塩素化パラフィン、ブロムトル
エン、ヘキサブロムベンゼン、三酸化アンチモンなどの
難燃剤、ベンガラなどの着色剤、シランカップリング剤
等を適宜添加配合しても差しつかえない。The resin composition used in the present invention contains an epoxy resin, carbon black, a compound having an azo group, and an inorganic filler as essential components, but if necessary, natural waxes, metal salts of linear fatty acids, acid amides, etc. , esters, paraffins, etc., flame retardants such as chlorinated paraffin, bromotoluene, hexabromobenzene, antimony trioxide, colorants such as red iron, silane coupling agents, etc. may be added as appropriate. can not use.
本発明に用いる樹脂組成物を成形材料として調製する一
般的な方法としては、エポキシ樹脂、硬化剤、カーボン
ブラック、アゾ基を有する化合物、無機質充填剤、その
他を所定の組成比に選/Vだ原料をミキサー等により十
分均一に混合した後、更に熱【コールによる溶融混合処
理、またはニーダなどによる混合処理を行い、冷却固化
させ適当な大ぎさに粉砕して成形材料を得ることができ
る。A general method for preparing the resin composition used in the present invention as a molding material is to select epoxy resin, curing agent, carbon black, compound having an azo group, inorganic filler, and others in a predetermined composition ratio. After the raw materials are thoroughly and uniformly mixed using a mixer or the like, they are further melted and mixed using heat (coal), or mixed using a kneader, etc., and then cooled and solidified and pulverized to an appropriate size to obtain a molding material.
得られた成形材料はそのままインジェクション成形や1
〜ランスフアー成形を適用して樹脂封止型半導体装置を
製造する。The obtained molding material can be directly used for injection molding or
-Manufacturing resin-sealed semiconductor devices by applying transfer molding.
(実施例)
本発明を実施例により具体的に説明するが、本発明は以
下の実施例に限定されるものではない。(Examples) The present invention will be specifically explained by examples, but the present invention is not limited to the following examples.
以下実施例および比較例において「%」とあるのは「重
量%」を意味する。In the Examples and Comparative Examples below, "%" means "% by weight".
実施例 1
タレゾールノボラックエポキシ樹脂(エポキシ当M 2
15) 18%にノボラック型フェノール樹脂(フェノ
ール当11107) 12%、カーボンブラック0.2
0%、次式の化合物
1%およびシリカ粉末68.8%を常温で混合し、90
〜95℃で混練し、冷却した後、粉砕して成形材料を得
た。 得られた成形材料をタブレット化し、予熱してト
ランスファー成形で 170°Cに加熱した金型内に注
入し、半導体素子を封止硬化させて樹脂封止型半導体装
置を製造した。 この装置につぃてレーザーマーク鮮明
度、赤外線の透過率、誤動作の有無、機械的強度、耐湿
性等を試験した。Example 1 Talesol novolak epoxy resin (epoxy weight M2
15) 18% novolac type phenolic resin (phenol 11107) 12%, carbon black 0.2
0%, 1% of the compound of the following formula and 68.8% of silica powder were mixed at room temperature, and 90%
After kneading at ~95°C, cooling, and pulverizing, a molding material was obtained. The obtained molding material was tabletted and injected into a mold that had been preheated and heated to 170°C by transfer molding, and the semiconductor element was sealed and cured to manufacture a resin-sealed semiconductor device. This device was tested for laser mark clarity, infrared transmittance, malfunction, mechanical strength, moisture resistance, etc.
その結果を第1表に示した。The results are shown in Table 1.
実施例 2
タレゾールノボラックエポキシ樹脂(エポキシ化fi
215) 16%にノボラック型フェノール樹脂くフェ
ノール当ffi 107) 13.5%、カーボンブラ
ック0.5%、次式の化合物
0.5%およびシリカ粉末69.5%を実施例1と同様
にして成形材料を15J 、また同様にして樹脂封止型
半導体装置を製造した。 この装置について実施例1と
同様の諸試験を行った。 その結果を第1表に示した。Example 2 Talesol novolac epoxy resin (epoxidized fi
215) 16%, novolac type phenolic resin, 13.5% carbon black, 0.5% of the compound of the following formula and 69.5% of silica powder were added in the same manner as in Example 1. A resin-sealed semiconductor device was manufactured in the same manner using 15J of molding material. Various tests similar to those in Example 1 were conducted on this device. The results are shown in Table 1.
比較例1
タレゾールノボラックエポキシ樹脂(エポキシ化FJ
215) 20%に、ノボラック型フェノール樹脂(フ
ェノール当ffi 10?) 10%、次式の化合物1
%およびシリカ粉末69%を実施例1と同様にして成形
材料を得、それを用いて樹脂封止型半導体装置を製造し
た。 この装置について実施例1と同様の諸試験を行っ
た。 その結果を第1表に示した。Comparative Example 1 Talesol novolak epoxy resin (epoxidized FJ
215) 20%, novolak type phenolic resin (phenol equivalent ffi 10?) 10%, compound 1 of the following formula
% and 69% of silica powder to obtain a molding material in the same manner as in Example 1, and using it, a resin-sealed semiconductor device was manufactured. Various tests similar to those in Example 1 were conducted on this device. The results are shown in Table 1.
比較例 2
タレゾールノボラックエポキシ樹脂(エポキシ化ffi
215) 20%にノボラック型フェノール樹脂(フ
ェノール当ffi 107) 10%、カーボンブラッ
ク1%、シリカ粉末69%を実施例1と同様にして成形
材料を得、それを用いて樹脂封止型半導体装置を製造し
た。 この装置について実施例1と同様に開時性の試験
を行ったので第1表に示した。Comparative Example 2 Talesol novolac epoxy resin (epoxidized ffi
215) A molding material was obtained in the same manner as in Example 1 by adding 20% novolak type phenol resin (phenol ffi 107), 1% carbon black, and 69% silica powder, and using it to fabricate a resin-sealed semiconductor device. was manufactured. The opening properties of this device were tested in the same manner as in Example 1, and the results are shown in Table 1.
第1表
*1 :樹脂組成物を用いて半導体素子を170℃で3
分間トランスファー成形し、その後180℃で8時間硬
化させて樹脂封止型半導体装置を製造した。こうして得
た装置100個について、炭酸ガスレーザーを用いてレ
ーザーマークを行い目視で鮮明度を評価した。 ◎・
・・非常に鮮明、O・・・鮮明、×・・・不鮮明*2
:樹脂封止型半導体装置を一65℃と+200℃の恒温
槽に各30分間ずつ入れ500サイクル繰り返した後の
樹脂クラックを調査した。Table 1 *1: Semiconductor elements are manufactured using resin compositions at 170°C.
Transfer molding was carried out for 1 minute, followed by curing at 180° C. for 8 hours to produce a resin-sealed semiconductor device. Laser marks were made using a carbon dioxide laser on the 100 devices thus obtained, and the sharpness was visually evaluated. ◎・
...Very clear, O...Clear, ×...Unclear*2
: Resin-sealed semiconductor devices were placed in constant temperature baths at -65° C. and +200° C. for 30 minutes each, and resin cracks were investigated after 500 cycles were repeated.
*3 :樹脂組成物を用いて2本のアルミニウム配線を
有する半導体製品を170℃で3分間1〜ランスフアー
成形し、その後180℃で8時間硬化させた。こうして
1りた樹脂封止型半導体装置100個について120℃
の高圧水蒸気中で耐湿ν験を行い、アルミニウム腐食に
よる50%の断線(不良発生)の起こる時間苓評価した
。*3: Using the resin composition, a semiconductor product having two aluminum wirings was lance-formed at 170°C for 3 minutes, and then cured at 180°C for 8 hours. 120℃ for 100 resin-sealed semiconductor devices obtained in this way.
A moisture resistance test was conducted in high-pressure steam, and the time required for 50% wire breakage (defect occurrence) due to aluminum corrosion was evaluated.
[発明の効果]
本発明の樹脂封止型半導体装置は、封止樹脂にカーボン
ブラックとアゾ基を有する化合物とを配合したことによ
って、レーザーマーク鮮明度に優れ、赤外線の透過率を
ゼロパーセントにしたため、赤外線による半導体素子の
誤動作を防止でき、更に耐湿性、耐熱性に優れた信頼性
の高い装置であり、工業上有益なものである。[Effects of the Invention] The resin-sealed semiconductor device of the present invention has excellent laser mark clarity and infrared transmittance of zero percent by blending carbon black and an azo group-containing compound into the sealing resin. Therefore, it is a highly reliable device that can prevent malfunctions of semiconductor elements due to infrared rays and has excellent moisture resistance and heat resistance, and is industrially useful.
特許出願人 東芝ケミカル株式会社 手続補正用(自発) 昭和61年2月25日Patent applicant: Toshiba Chemical Corporation For procedural amendments (voluntary) February 25, 1986
Claims (1)
止することを特徴とする樹脂封止型半導体装置。 2 樹脂組成物が、(B)カーボンブラックを0.10
〜10重量%、(C)アゾ基を有する化合物を0.01
〜10重量%、(D)無機質充填剤を25〜90重量%
含有する特許請求の範囲第1項記載の樹脂封止型半導体
装置。[Claims] 1. A semiconductor device is sealed using a resin composition containing (A) an epoxy resin, (B) carbon black, (C) a compound having an azo group, and (D) an inorganic filler as essential components. A resin-sealed semiconductor device characterized in that it is sealed. 2 The resin composition contains (B) carbon black by 0.10
~10% by weight, (C) 0.01% of the compound having an azo group
~10% by weight, (D) 25-90% by weight of inorganic filler
A resin-sealed semiconductor device according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61016852A JPS62176151A (en) | 1986-01-30 | 1986-01-30 | Resin sealed type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61016852A JPS62176151A (en) | 1986-01-30 | 1986-01-30 | Resin sealed type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62176151A true JPS62176151A (en) | 1987-08-01 |
Family
ID=11927743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61016852A Pending JPS62176151A (en) | 1986-01-30 | 1986-01-30 | Resin sealed type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62176151A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012117775A1 (en) * | 2011-03-01 | 2012-09-07 | シャープ株式会社 | Solar cell module and solar cell module production method |
JP2012182472A (en) * | 2012-04-23 | 2012-09-20 | Sharp Corp | Solar cell module and manufacturing method of the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60119760A (en) * | 1983-11-30 | 1985-06-27 | Nitto Electric Ind Co Ltd | Resin-sealed semiconductor device |
JPS60152522A (en) * | 1984-01-23 | 1985-08-10 | Toshiba Chem Corp | Sealing resin composition |
-
1986
- 1986-01-30 JP JP61016852A patent/JPS62176151A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60119760A (en) * | 1983-11-30 | 1985-06-27 | Nitto Electric Ind Co Ltd | Resin-sealed semiconductor device |
JPS60152522A (en) * | 1984-01-23 | 1985-08-10 | Toshiba Chem Corp | Sealing resin composition |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012117775A1 (en) * | 2011-03-01 | 2012-09-07 | シャープ株式会社 | Solar cell module and solar cell module production method |
JP2012182317A (en) * | 2011-03-01 | 2012-09-20 | Sharp Corp | Solar cell module and manufacturing method of the same |
JP2012182472A (en) * | 2012-04-23 | 2012-09-20 | Sharp Corp | Solar cell module and manufacturing method of the same |
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