JPS62174994A - Thick film fine pattern - Google Patents
Thick film fine patternInfo
- Publication number
- JPS62174994A JPS62174994A JP29992086A JP29992086A JPS62174994A JP S62174994 A JPS62174994 A JP S62174994A JP 29992086 A JP29992086 A JP 29992086A JP 29992086 A JP29992086 A JP 29992086A JP S62174994 A JPS62174994 A JP S62174994A
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductor
- fine pattern
- thickness
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 12
- 239000010408 film Substances 0.000 description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 238000007747 plating Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229920000459 Nitrile rubber Polymers 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 235000014121 butter Nutrition 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- -1 etc. are preferred Chemical compound 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- 241000219122 Cucurbita Species 0.000 description 1
- 235000009852 Cucurbita pepo Nutrition 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- FNYLWPVRPXGIIP-UHFFFAOYSA-N Triamterene Chemical compound NC1=NC2=NC(N)=NC(N)=C2N=C1C1=CC=CC=C1 FNYLWPVRPXGIIP-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Structure Of Printed Boards (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、高密度、高信頼性の厚膜ファインパターンに
関し、小型コイル、高密度コネクター、高密度配線など
に利用されるものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thick film fine pattern with high density and high reliability, and is used for small coils, high density connectors, high density wiring, etc.
従来の導体パターンにおいては、導体厚の厚い例えば3
5μm厚のパターンでは、配線密度2〜3本/mmのも
のしか得られていない。例えば、上記の従来の導体パタ
ーンによるコイルを用いて、モーターを製造する場合、
小型・薄型で高特性のものを得る事が出来ない。即ち、
小型・薄型で高特性のモーターを得る為には、ある限ら
れた容積の中に1出来るだけ−くのターン数をとり、か
つ出来るだけ抵抗を低く(導体厚を厚く)する事が必要
であるが、従来技術ではこのような導体パターンを得る
事は出来ない。In conventional conductor patterns, the conductor thickness is thick, e.g.
In a pattern with a thickness of 5 μm, a wiring density of only 2 to 3 wires/mm has been obtained. For example, when manufacturing a motor using a coil with the above-mentioned conventional conductor pattern,
It is not possible to obtain a small, thin, and high-performance product. That is,
In order to obtain a small and thin motor with high characteristics, it is necessary to have as many turns as possible within a certain limited volume and to make the resistance as low as possible (thick conductor). However, it is not possible to obtain such a conductor pattern using conventional techniques.
本願は従来得る事の出来なかった、配線密度5本/瓢以
上で、導体厚15〜58μmの厚膜ファインパターン導
体を提供し、例えば従来困難と考えられていた小型・薄
型で高特性のモーター用コイル等を提供するものである
。The present application provides a thick film fine pattern conductor with a wiring density of 5 lines/gourd or more and a conductor thickness of 15 to 58 μm, which was previously impossible to obtain. The company provides coils, etc. for use.
即ち、本発明は、フィルム基板の少なくとも一方の面に
配線密度5本/亀以上で、導体厚15〜58μmの導体
が形成されている厚膜ファインバター/である。That is, the present invention is a thick film fine butter in which a conductor having a conductor thickness of 15 to 58 μm is formed on at least one surface of a film substrate at a wiring density of 5 lines/height or more.
本発明の厚膜ファインパターンは、フィルム状基板の片
面だけく形成しても良いが、必要に応じて両面に形成し
ても良く、両面に形成する場合はフィルム状基板忙穴あ
けし、スルーホール接続を行う必要がある。1枚のフィ
ルム状基板の上に複数のパターンを形成する場合は、フ
ィルム状基板の両面にパターンを形成し、スルーホール
接続した方がつなぎ込みが容易であり好ましい。The thick film fine pattern of the present invention may be formed only on one side of the film-like substrate, but it may also be formed on both sides if necessary. If it is formed on both sides, the thick film fine pattern may be formed on the film-like substrate by drilling through holes. Connections need to be made. In the case of forming a plurality of patterns on one film-like substrate, it is preferable to form the patterns on both sides of the film-like substrate and connect them through through holes because it is easier to connect them.
また、配線密度としては5本/mm以上でなければなら
ず、10〜20本/Wが好ましい。導体厚としては15
〜58μmでなければならず、20〜58μmが好まし
く、更には35〜58μmが好ましい。Further, the wiring density must be 5 wires/mm or more, and preferably 10 to 20 wires/W. The conductor thickness is 15
~58 μm, preferably 20-58 μm, more preferably 35-58 μm.
本発明に使用されるフィルム状基板としては、ポリエス
テルフィルム、エポキシフイルム、ポリイミドフィルム
、ポリバラパン酸フィルム、トリアジンフィルムなどフ
ィルム状のものはすべて使用出来るが、可撓性、耐熱性
の点からポリイミドフィルム、ボリバ2パン酸フィルム
、トリアジ/フィルムが好ましい。フィルム状基板の膜
厚は、高密度化という意味では出来るだけ薄いものが好
ましいが、余り薄過ぎると作業性が悪くなり、膜厚とし
ては5〜50μm、%特に10〜25μmが好ましい範
囲である。As the film-like substrate used in the present invention, any film-like substrate can be used, such as polyester film, epoxy film, polyimide film, polyvarapanic acid film, triazine film, etc. However, from the viewpoint of flexibility and heat resistance, polyimide film, Boliba dipanic acid film and triazide/film are preferred. The film thickness of the film-like substrate is preferably as thin as possible in the sense of high density, but if it is too thin, workability will deteriorate, so the film thickness is preferably in the range of 5 to 50 μm, particularly 10 to 25 μm. .
また必要に応じて、フィルム状基板と導電体の接着性を
向上する為に1フイルム状基板上に接着層を設けても良
い。接着剤としては、ポリエステル−イソシアネート系
、フェノール樹脂−ブチラール系、フェノール樹脂−二
トリルゴム系、エポキシ−ナイロン系1、エポキシ−ニ
トリルゴム系などがあり、耐熱性、耐湿性、接着性の優
れたものが好ましく、特にエポキシ−ニトリルゴム系接
着剤が好ましい。接着剤の膜厚は高密度化、接着性の点
から、1〜20μm1特に2〜10μmが好ましい範囲
である。Further, if necessary, an adhesive layer may be provided on one film-like substrate in order to improve the adhesion between the film-like substrate and the conductor. Adhesives include polyester-isocyanate, phenolic resin-butyral, phenolic resin-nitrile rubber, epoxy-nylon 1, and epoxy-nitrile rubber, which have excellent heat resistance, moisture resistance, and adhesive properties. are preferred, and epoxy-nitrile rubber adhesives are particularly preferred. The thickness of the adhesive is preferably in the range of 1 to 20 μm, particularly 2 to 10 μm, from the viewpoint of high density and adhesive properties.
本発明に使用される導電体としては、導電性のものであ
れば何でも良いが、銀、金、銅、ニッケル、スズなどが
好ましく、特に導電性、経済性の点から銅が好ましい。The conductor used in the present invention may be any conductive material, but silver, gold, copper, nickel, tin, etc. are preferred, and copper is particularly preferred from the viewpoint of conductivity and economy.
本発明の厚膜ファインパターンを形成する方法としては
、フィルム基板に、パターン化されたもしくはパターン
化されない膜厚0.1〜10μmの薄膜導電体を形成す
る段階と、陰極の電流密度3〜20 A/ddの条件で
導電体をファインパターン11C5〜58μm厚電解メ
ッキする段階とKより膜厚15μm〜58μmの導電体
が形成される。The method for forming a thick film fine pattern of the present invention includes the steps of forming a patterned or unpatterned thin film conductor with a thickness of 0.1 to 10 μm on a film substrate, and a current density of 3 to 20 μm at a cathode. A conductor having a film thickness of 15 μm to 58 μm is formed by electroplating the conductor in a fine pattern 11C with a thickness of 5 to 58 μm under conditions of A/dd and K.
膜厚0.1−10μmの薄膜導電体を形成する方法とし
ては、蒸着、スパッタリング、イオンブレーティングな
どの方法、無電解メッキによる方法、銅薄膜を貼る方法
などがあり、この薄膜導電体は、従来公知のフォトエツ
チング法などにより、電解メッキ前忙ファインバター/
状にバターニングされていても良く、また薄膜導電体上
JC7オトレジストでマスクを形成して、ファインパタ
ーンに電解メッキを行った後、ファインパターン以外の
薄膜導電体をエツチングなどくより除去しても良い。Methods for forming a thin film conductor with a film thickness of 0.1 to 10 μm include methods such as vapor deposition, sputtering, ion blasting, electroless plating, and pasting a copper thin film. By conventionally known photo-etching method etc., fine butter/
Alternatively, after forming a mask with JC7 photoresist on the thin film conductor and performing electrolytic plating on the fine pattern, the thin film conductor other than the fine pattern may be removed by etching or other means. good.
薄膜導電体の膜厚は、0.1〜IOμm特に0.2〜5
μmが好ましい範囲である。The film thickness of the thin film conductor is 0.1 to IOμm, especially 0.2 to 5μm.
The preferred range is μm.
電解メッキの種類としては、導電体であれば何でも良い
が、銀、金、銅、ニッケル、スズなどが好ましく、特に
導電性および経済性の点から銅が好ましい。銅の電解メ
ッキとしては、シアン化銅メッキ、ビロリン酸銅メッキ
、硫酸銅メッキ、ホウフッ化鋼メッキなどがあるが、特
にピロリン酸鋼メッキ、硫酸銅メッキが好ましい。ファ
インパターンを電解メッキする場合、重要な因子として
は陰極の電流密度があり、陰極電流密度が小さい場合は
、膜厚方向以上に幅方向への太りが生じ、かつメッキ膜
厚が不均一になり易く、陰極電流密度としては3〜20
A/drl、特に5〜I 5 h/a、1が好ましい
範囲である。陰極電流密度が2oA/drI1以上にな
るとやけが生じる様になる。電解メッキ膜厚は設計値に
より異なるが、5〜58μm特に10〜50μmが好ま
しい範囲である。Any type of electrolytic plating may be used as long as it is a conductor, but silver, gold, copper, nickel, tin, etc. are preferred, and copper is particularly preferred from the standpoint of conductivity and economy. Examples of electrolytic plating for copper include copper cyanide plating, copper pyrophosphate plating, copper sulfate plating, and borofluoride steel plating, with pyrophosphate steel plating and copper sulfate plating being particularly preferred. When electrolytically plating fine patterns, the cathode current density is an important factor. If the cathode current density is low, the plating film will become thicker in the width direction than in the thickness direction, and the plating film thickness will become non-uniform. easily, and the cathode current density is 3 to 20
A/drl, particularly 5 to I5 h/a, 1 is a preferred range. When the cathode current density exceeds 2oA/drI1, burns begin to occur. Although the electrolytic plating film thickness varies depending on the design value, a preferable range is 5 to 58 μm, particularly 10 to 50 μm.
また、より信頼性を向上する為に1必要に応じて、電解
メツ牛後熱処理或いは金、スズ、ハンダ又はポリマーか
ら成る保護層を設けるなどの処理が行われる。Further, in order to further improve reliability, treatments such as heat treatment after electrolysis or the provision of a protective layer made of gold, tin, solder, or polymer are performed as necessary.
〔実施例〕
以下に本発明の態様を一層明確にする為に、実施例を挙
げて説明するが、本発明は以下の実施例に限定されるも
のではなく、種々の変形が可能である。[Examples] In order to further clarify aspects of the present invention, examples will be described below, but the present invention is not limited to the following examples, and various modifications can be made.
実施例1
デュポン社製ポリイミドフィルム「カプトン」(膜厚2
5μm)上に、表面処理、無電解鋼メッキ(膜厚5μm
)、フォトエツチングで膜厚5μmの薄膜導電体パター
ンを形成し、次いで、ノ・−ショウ打出社製ビロリン酸
銅メッキ液を用いて、陰極電流密度14 A/d♂の条
件で銅′f:20μm厚電解メツΦを行って、膜厚25
μmで12゜5本/gI11のファインパターンを得た
。Example 1 Polyimide film “Kapton” manufactured by DuPont (film thickness 2
5μm), surface treatment, electroless steel plating (film thickness 5μm)
), a thin film conductor pattern with a film thickness of 5 μm was formed by photoetching, and then copper 'f: Perform 20 μm thick electrolytic film Φ to obtain a film thickness of 25 μm.
A fine pattern of 12°5 lines/gI11 was obtained in μm.
実施例2
エッソ化学社製ポリバ2パン酸フィルム「トラドロン」
(膜厚25μm)の両面に、ボスチック社製エポキシ−
ニトリルゴム系接着剤「XA−564−9Jを乾燥後片
面膜厚が5μm塗布し、穴あけ、銅蒸着して得られた膜
厚0.3μmの薄膜導電体を、フォトレジスト(膜厚5
μm)でパターン以外全マスクして、次いで、バーショ
ク打出社製ビロリン酸銅メッキ液を用いて、陰極電流密
度’IA/d−の条件で銅を35μm厚電解メッキを行
い、その後パターン以外の薄膜銅をエツチング除去して
、膜厚35μmで10本/mmのファインパターンを得
た。Example 2 Polyba dipanic acid film “Tradron” manufactured by Esso Chemical Co., Ltd.
(film thickness 25 μm) on both sides with Bostic epoxy
After drying, nitrile rubber adhesive "XA-564-9J" was applied to a film thickness of 5 μm on one side, holes were made, and copper was deposited to form a thin film conductor with a film thickness of 0.3 μm.
Then, using a birophosphate copper plating solution manufactured by Bershoku Uchide Co., Ltd., electrolytic plating was performed to a thickness of 35 μm with copper at a cathode current density of 'IA/d-, and then the thin film other than the pattern was The copper was removed by etching to obtain a fine pattern with a film thickness of 35 μm and a density of 10 lines/mm.
実施例3
銅を50μm厚電解メッキする以外は、実施例2と同様
に処理して、膜厚50μmで7.4本/鰭のファインパ
ターンを得た。Example 3 A fine pattern of 7.4 fins/fin with a film thickness of 50 μm was obtained by carrying out the same treatment as in Example 2 except that copper was electrolytically plated to a thickness of 50 μm.
本発EI!/cより、厚膜ファインパターン回路(膜厚
15〜58μmで配線密度5本/111I1以上の回路
)を提供する事が出来、従来得る事の出来なかった小型
コイル、高密度コネクター、高密度配線等を提供する。Original EI! /c allows us to provide thick film fine pattern circuits (circuits with a film thickness of 15 to 58 μm and a wiring density of 5 lines/111I1 or more), and we can provide small coils, high-density connectors, and high-density wiring that were previously impossible to obtain. etc.
尚、小型コイルとしては、モーター以外のアクチェエー
タ−、ピックアップ、スピーカー等の駆動部品、トラン
ス、インダクタンス素子、ディレーライン等の回路部品
、FGセンサー等のセンサ一部品等への応用も勿論可能
である。Note that the small coil can of course be applied to actuators other than motors, drive parts such as pickups and speakers, circuit parts such as transformers, inductance elements, and delay lines, and sensor parts such as FG sensors.
Claims (1)
/mm以上で、導体厚15〜58μmの導体が形成され
ている事を特徴とする厚膜ファインパターンA thick film fine pattern characterized in that a conductor with a wiring density of 5 lines/mm or more and a conductor thickness of 15 to 58 μm is formed on at least one surface of a film substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29992086A JPS62174994A (en) | 1986-12-18 | 1986-12-18 | Thick film fine pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29992086A JPS62174994A (en) | 1986-12-18 | 1986-12-18 | Thick film fine pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62174994A true JPS62174994A (en) | 1987-07-31 |
Family
ID=17878523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29992086A Pending JPS62174994A (en) | 1986-12-18 | 1986-12-18 | Thick film fine pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62174994A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012510725A (en) * | 2008-12-03 | 2012-05-10 | プラナーマグ インコーポレイテッド | Integrated planar variable transformer with embedded magnetic core |
-
1986
- 1986-12-18 JP JP29992086A patent/JPS62174994A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012510725A (en) * | 2008-12-03 | 2012-05-10 | プラナーマグ インコーポレイテッド | Integrated planar variable transformer with embedded magnetic core |
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