JPS6217387B2 - - Google Patents

Info

Publication number
JPS6217387B2
JPS6217387B2 JP54031453A JP3145379A JPS6217387B2 JP S6217387 B2 JPS6217387 B2 JP S6217387B2 JP 54031453 A JP54031453 A JP 54031453A JP 3145379 A JP3145379 A JP 3145379A JP S6217387 B2 JPS6217387 B2 JP S6217387B2
Authority
JP
Japan
Prior art keywords
transistors
base
semiconductor device
transistor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54031453A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55123161A (en
Inventor
Shinichi Akashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP3145379A priority Critical patent/JPS55123161A/ja
Publication of JPS55123161A publication Critical patent/JPS55123161A/ja
Publication of JPS6217387B2 publication Critical patent/JPS6217387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP3145379A 1979-03-16 1979-03-16 Darlington-connection semiconductor device Granted JPS55123161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3145379A JPS55123161A (en) 1979-03-16 1979-03-16 Darlington-connection semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3145379A JPS55123161A (en) 1979-03-16 1979-03-16 Darlington-connection semiconductor device

Publications (2)

Publication Number Publication Date
JPS55123161A JPS55123161A (en) 1980-09-22
JPS6217387B2 true JPS6217387B2 (enrdf_load_stackoverflow) 1987-04-17

Family

ID=12331665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3145379A Granted JPS55123161A (en) 1979-03-16 1979-03-16 Darlington-connection semiconductor device

Country Status (1)

Country Link
JP (1) JPS55123161A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1141255B (it) * 1980-02-28 1986-10-01 Montedison Spa Processo continuo per l'allontanamento di monomeri da emulsioni polimieriche
JPS57162462A (en) * 1981-03-31 1982-10-06 Toshiba Corp Semiconductor device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
JPS61206262A (ja) * 1985-03-11 1986-09-12 Shindengen Electric Mfg Co Ltd 高耐圧プレ−ナ型半導体装置
DE102006007040A1 (de) * 2006-02-15 2007-08-16 Austriamicrosystems Ag Bauelement mit integriertem Heizelement und Verfahren zum Beheizen eines Halbleiterkörpers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54105977A (en) * 1978-02-08 1979-08-20 Hitachi Ltd Semiconductor device
JPS5559768A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Darlington power transistor

Also Published As

Publication number Publication date
JPS55123161A (en) 1980-09-22

Similar Documents

Publication Publication Date Title
US4409606A (en) High breakdown voltage semiconductor device
US4547791A (en) CMOS-Bipolar Darlington device
US4100565A (en) Monolithic resistor for compensating beta of a lateral transistor
US4323913A (en) Integrated semiconductor circuit arrangement
US3836998A (en) High voltage bipolar semiconductor device and integrated circuit using the same and method
JPH0216017B2 (enrdf_load_stackoverflow)
US4260999A (en) Semiconductor device and method of making the same
US3755722A (en) Resistor isolation for double mesa transistors
JPS6217387B2 (enrdf_load_stackoverflow)
US4443808A (en) Semiconductor device
JPS6239547B2 (enrdf_load_stackoverflow)
JP3193368B2 (ja) 集積回路の入力端保護回路
JPH0715134Y2 (ja) 半導体装置
JP3125401B2 (ja) 半導体集積回路装置
US4134124A (en) Semiconductor devices and circuit arrangements including such devices
US5777376A (en) Pnp-type bipolar transistor
JP2518929B2 (ja) バイポ―ラ型半導体集積回路
JP3217484B2 (ja) 高耐圧半導体装置
JPH05864B2 (enrdf_load_stackoverflow)
JP2833913B2 (ja) バイポーラ集積回路装置
JPS6327865B2 (enrdf_load_stackoverflow)
JPH0130308B2 (enrdf_load_stackoverflow)
JP2605753B2 (ja) 縦形バイポーラトランジスタ
JPS6031105B2 (ja) 半導体装置
JPH08227941A (ja) 複合半導体素子