JPS6216538B2 - - Google Patents

Info

Publication number
JPS6216538B2
JPS6216538B2 JP56035023A JP3502381A JPS6216538B2 JP S6216538 B2 JPS6216538 B2 JP S6216538B2 JP 56035023 A JP56035023 A JP 56035023A JP 3502381 A JP3502381 A JP 3502381A JP S6216538 B2 JPS6216538 B2 JP S6216538B2
Authority
JP
Japan
Prior art keywords
temperature
heat treatment
substrate
hours
oxygen concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56035023A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57167636A (en
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56035023A priority Critical patent/JPS57167636A/ja
Priority to EP82301212A priority patent/EP0060676B1/en
Priority to DE8282301212T priority patent/DE3280219D1/de
Priority to IE559/82A priority patent/IE55966B1/en
Publication of JPS57167636A publication Critical patent/JPS57167636A/ja
Priority to US06/598,544 priority patent/US4597804A/en
Publication of JPS6216538B2 publication Critical patent/JPS6216538B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/90—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
JP56035023A 1981-03-11 1981-03-11 Manufacture of semiconductor device Granted JPS57167636A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56035023A JPS57167636A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device
EP82301212A EP0060676B1 (en) 1981-03-11 1982-03-10 A method for the production of a semiconductor device comprising annealing a silicon wafer
DE8282301212T DE3280219D1 (de) 1981-03-11 1982-03-10 Verfahren zur herstellung einer halbleiteranordnung mit ausgluehen eines halbleiterkoerpers.
IE559/82A IE55966B1 (en) 1981-03-11 1982-03-11 A method for the production of a semiconductor device comprising annealing a silicon wafer
US06/598,544 US4597804A (en) 1981-03-11 1984-04-12 Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56035023A JPS57167636A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57167636A JPS57167636A (en) 1982-10-15
JPS6216538B2 true JPS6216538B2 (Direct) 1987-04-13

Family

ID=12430454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56035023A Granted JPS57167636A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57167636A (Direct)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437922A (en) * 1982-03-26 1984-03-20 International Business Machines Corporation Method for tailoring oxygen precipitate particle density and distribution silicon wafers
JPH01312840A (ja) * 1988-06-10 1989-12-18 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS57167636A (en) 1982-10-15

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