JPS62165103A - Method for measuring film thickness - Google Patents
Method for measuring film thicknessInfo
- Publication number
- JPS62165103A JPS62165103A JP862786A JP862786A JPS62165103A JP S62165103 A JPS62165103 A JP S62165103A JP 862786 A JP862786 A JP 862786A JP 862786 A JP862786 A JP 862786A JP S62165103 A JPS62165103 A JP S62165103A
- Authority
- JP
- Japan
- Prior art keywords
- value
- detected
- film thickness
- values
- extreme
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
【発明の詳細な説明】
(分野)
本発明は薄膜特に半導体工程でのシリコン上の酸化膜の
ようにミクロンメーター以下の膜厚の検出、測定方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field) The present invention relates to a method for detecting and measuring thin films, particularly film thicknesses of micrometers or less, such as oxide films on silicon in semiconductor processes.
(原理)
本発明で利用している基本的な膜厚検出の測定原理につ
いて第1図(a)、 (b)を用いて以下説明する。(Principle) The basic measurement principle of film thickness detection used in the present invention will be explained below using FIGS. 1(a) and 1(b).
媒質の屈折率を入射側からに1.に2.kAとし、いま
測定しようとする膜厚をdとする。使用波長(真空中で
の波長λ。)の各々の入射角を01゜θ2.θ3 とす
る。この時の振巾反射率Yけ次のようになる。The refractive index of the medium is 1. from the incident side. 2. kA, and the film thickness to be measured now is d. The incident angle of each wavelength used (wavelength λ in vacuum) is 01°θ2. Let it be θ3. At this time, the amplitude reflectance Y is as follows.
〔参考: M、Born and Ei、Wolf著、
@Pr1ncip’1esof 0ptics’ 3r
dedition、 PERGAMON PRESB。[Reference: M. Born and Ei, Wolf,
@Pr1ncip'1esof 0ptics' 3r
dedition, PERGAMON PRESB.
62頁〕
ここでY12は媒質■と■の境界でのフレネルの反射係
数で、Y2Sは媒質■と■の境界でのフレである。実際
測定可卵な量は、反射強度すなわちR=lY12(通常
反射率と呼ぶ)であり、次のようになる。Page 62] Here, Y12 is the Fresnel reflection coefficient at the boundary between the media ■ and ■, and Y2S is the Fresnel reflection coefficient at the boundary between the media ■ and ■. The quantity that can actually be measured is the reflection intensity, that is, R=lY12 (usually called reflectance), which is as follows.
ここで(2)式をλに関して微分し、R′=口となるよ
うなβを求めると111n2β=0となり2β=N・2
π ・・・(3)
が求壕る。Here, by differentiating equation (2) with respect to λ and finding β such that R′=mouth, 111n2β=0 and 2β=N・2
π...(3) searches for a trench.
ここでNは整数である。Here, N is an integer.
ところで波長がλ1 、λ2のときのβ1.β2は前表
の如く
2π
β1= 2. nla CO2O3
ここでnl、n2は波長λ1.λ2での屈折率である。By the way, when the wavelengths are λ1 and λ2, β1. β2 is 2π β1=2. as shown in the previous table. nla CO2O3 where nl and n2 are wavelengths λ1. It is the refractive index at λ2.
したがって(3)式より
2π
2β1 =2 ・、B、 nl d CO[ilθ2=
N−2πとなり、
2(β2−β、)=2・2π・acosθ2(T2−「
)=2πここで02=0とするとdは次式で求まる。Therefore, from equation (3), 2π 2β1 = 2 ・, B, nl d CO[ilθ2=
N-2π, 2(β2-β,)=2・2π・acosθ2(T2-“
)=2π Here, if 02=0, d can be found by the following formula.
極小値に関しても、同様の方法でλ3.λ4及びそれぞ
れの波長での71折率n3 、 n4より得られるまた
、極大値と極小値λ1.λ3を使用してもで、膜厚を得
る事が出来る。Regarding the local minimum value, λ3. λ4 and the 71 refractive index n3, n4 at each wavelength. Also, the maximum value and minimum value λ1. Even if λ3 is used, the film thickness can be obtained.
(従来技術)
しかし、第3図に示すように測定値に誤差が生じた場合
、λXを極大値と判断し、λYを極小値と判断してしま
うため、正確に膜厚の検出、測定を行う事が出来なかっ
た。(Prior art) However, if an error occurs in the measured value as shown in Figure 3, λX is determined to be the maximum value and λY is determined to be the minimum value, making it difficult to accurately detect and measure the film thickness. I couldn't do it.
(目的)
本発明は、前述したような測定値の誤差が生じた場合で
も正しい極値のみを検出し、正確な膜厚を検出する事を
目的としている。(Objective) An object of the present invention is to detect only the correct extreme value and accurately detect the film thickness even when errors in measurement values as described above occur.
(実施例)
膜厚からの分光反射率は、一般に下式(5)によって与
えられる。(Example) The spectral reflectance from the film thickness is generally given by the following formula (5).
ここで: ρo1は空気層と第一層間の振幅係数 φo1は空気層と第一層間の位相係数 ρ12は第一層と第二層間の振幅係数 φ12は第一層と第二層間の位相係数 δは位相項で、 δ=2πna/λである。here: ρo1 is the amplitude coefficient between the air layer and the first layer φo1 is the phase coefficient between the air layer and the first layer ρ12 is the amplitude coefficient between the first layer and the second layer φ12 is the phase coefficient between the first layer and the second layer δ is a phase term, and δ=2πna/λ.
(5)穴で、CO8の項は−1から1の間に入るので分
光反射率は、最大値が
となり最小値は
である。とちらも膜厚dに関係なく得る事が出来る。測
定値より求めた、極大値極小値がRmaw −” mi
nに対し、ある一定の値以上である場合のみ極大値とみ
なし、ある一定の値以下の場合のみ極小値とみなすこと
により所望の極値のみを検出しうる。すなわち第4図に
示すように、測定値の中央部に誤差を持つ場合、測定値
からそのまま極値を検出すると極大値としてλ1.へ、
λ2が検出され、極小値としてλ5.λYが検出される
。しかし、RmaXに対しある一定値tまたとえばt=
RmaxX 0.9等を設け、ソノ値を以上のみを極大
値と考えるとλ1 、λ2のみを検出出来る。また極小
値に関しても同様にRInlnに対し、ある一定値m、
たとえばm=Rmin X Ll等を設ければ、極小値
として検出されるのはλ5のみである。この一定値tあ
るいはmは測定のピッチあるいは装置の取りうる誤差等
により決定される。(5) In the hole, the CO8 term falls between -1 and 1, so the spectral reflectance has a maximum value and a minimum value. Both can be obtained regardless of the film thickness d. The maximum and minimum values obtained from the measured values are Rmaw −” mi
Only desired extreme values can be detected by regarding n as a maximum value only when it is greater than a certain value, and as a minimum value only when it is less than a certain value. That is, as shown in FIG. 4, when there is an error in the center of the measured value, if the extreme value is detected directly from the measured value, it will be determined as the local maximum value λ1. fart,
λ2 is detected, and λ5. λY is detected. However, if RmaX has a certain constant value t, for example, t=
If RmaxX is set at 0.9, etc., and only the values above are considered as local maximum values, only λ1 and λ2 can be detected. Similarly, regarding the local minimum value, for RInln, a certain constant value m,
For example, if m = Rmin x Ll, etc., only λ5 is detected as the minimum value. This constant value t or m is determined by the measurement pitch or possible error of the device.
オた、第5図に示すような場合、検出される極値はλY
は前述の手法により除外されるので葎大値λ1.八でち
る。 しかし膜厚の分光反射率のように周期性を持つ関
数は理論上、極大値と極、I・値は交互に存在するはず
であるから、この場合のように柩大信が並んで存在する
事は有りえない。従ってA1とλXの大きい方を極大値
と考える。Additionally, in the case shown in Figure 5, the detected extreme value is λY
is excluded by the method described above, so the maximum value λ1. Eight dechiru. However, in a function with periodicity such as the spectral reflectance of film thickness, the maximum value, the maximum value, and the I value should exist alternately, so the Hitsugi Daishins exist side by side as in this case. That can't happen. Therefore, the larger one of A1 and λX is considered to be the maximum value.
第6図に示す例はfを小値の場合で、極大値の場合と同
様にA3を極小値を判定する事が可能である。このよう
な場合には極値の位置に対し測定ピッチが細かいため、
膜厚計算上の誤差は大きくない。In the example shown in FIG. 6, when f is a small value, it is possible to determine that A3 is a local minimum value in the same way as in the case of a local maximum value. In such cases, the measurement pitch is small relative to the position of the extreme value, so
The error in film thickness calculation is not large.
測定する膜厚が非常に薄くなると第7図に示すように理
論上は波長のスキャン範囲に全く極値が見られなくなる
。このような場合でも測定誤差が生じると極値を検出し
てしまう。第7図の場合、前述までの手法にてλ却、λ
X1 +λY1は除去出来るが、λxoは極小値として
残ってしまう。When the film thickness to be measured becomes very thin, theoretically no extreme values can be seen in the wavelength scanning range, as shown in FIG. Even in such a case, if a measurement error occurs, an extreme value will be detected. In the case of Fig. 7, by using the method described above,
Although X1 +λY1 can be removed, λxo remains as a minimum value.
このような場合は、λXOの前後の測定値の傾きにより
判断するλXOが真に極値であれば前後の傾きの符号が
異なるはずであるが、第7図に示す例においてけλア0
よう小さいλでの平均の傾きとλXOより犬きいλでの
平均の傾きの符号が同じであるためλxoは極値から除
外する6極大値に関して本同様である。In such a case, if λXO, which is determined by the slopes of the measured values before and after λXO, is truly an extreme value, the signs of the slopes before and after the λXO should be different, but in the example shown in FIG.
Since the sign of the average slope at λ which is smaller than λXO is the same as that of the average slope at λ which is smaller than λXO, λxo is the same as in the book regarding the six maximum values excluded from the extreme values.
以上の方法によって測定値にバラツキがある場合でも正
しい極値を検出する事が可能である。By the above method, it is possible to detect the correct extreme value even if there are variations in the measured values.
第8図は本発明を実施するだめのシステムブロック図で
ある。分光器1で分光された光を試料ステージ2上に置
かれた試料面にファイバープローブ3で照明し試料面か
ら反射した光を再びファイバープローブ3で受は分光器
1内に設けられた光電変換素子により電気信号に変換す
る、コントローラ4によ勺分光器1の波長設定、試料ス
テージ2の移動をコントロールすると共に、前記分光器
1の光電変換素子の電気信号をデジタル信号に変換し、
そして試料ステージ2の位置を確認する。コンピュータ
5は前記コントローラ4を制御すると共にコントローラ
4から得られる前記ディジタル信号を受けとシ、反射率
Rを求め前記(3)式から膜厚dを計算する。FIG. 8 is a system block diagram for implementing the present invention. The fiber probe 3 illuminates the light separated by the spectrometer 1 onto the sample surface placed on the sample stage 2, and the light reflected from the sample surface is received again by the fiber probe 3 and is converted into a photoelectric converter installed in the spectrometer 1. The controller 4 controls the wavelength setting of the spectrometer 1 and the movement of the sample stage 2, and also converts the electric signal of the photoelectric conversion element of the spectrometer 1 into a digital signal.
Then, confirm the position of the sample stage 2. The computer 5 controls the controller 4, receives the digital signal obtained from the controller 4, determines the reflectance R, and calculates the film thickness d from the equation (3).
その結果をCRT8やフロッピーディスクドライブ9や
プリンター10に出力する。操作パネル6とフルキーボ
ード7によりコンピュータ5に屈折率等の条件を指定し
たり、分光器1の波長、試料ステージ2の移動量を指示
すると共に測定開始等の指令を行う。操作パネル6は通
常よく使用する条件で測定させる場合で、更にオペレー
タが誤操作しないよう必要最少限にキーをもっている。The results are output to a CRT 8, floppy disk drive 9, or printer 10. Using the operation panel 6 and full keyboard 7, conditions such as the refractive index are specified to the computer 5, the wavelength of the spectrometer 1 and the amount of movement of the sample stage 2 are specified, and commands such as the start of measurement are issued. The operation panel 6 is provided with the minimum number of keys needed to prevent the operator from operating the device erroneously, when measurements are to be made under commonly used conditions.
第8図の動作説明を第9A図の流ね図に沿って説明する
。まずステップS1で分光反射率の測定データを取り込
みステップS2で前後の測定点の比較を行って極大値m
ax(k)、極小値m1n(k)を求める。一方、膜及
び基板の屈折率から理論上の最大反射率Rmax最小反
射率Rminが得られるのでステップS6にて求める。The operation of FIG. 8 will be explained along the flow chart of FIG. 9A. First, in step S1, the measurement data of the spectral reflectance is taken in, and in step S2, the measurement points before and after are compared to obtain the maximum value m.
ax(k) and the minimum value m1n(k) are determined. On the other hand, since the theoretical maximum reflectance Rmax and minimum reflectance Rmin can be obtained from the refractive index of the film and the substrate, they are determined in step S6.
得られた理論値を基にたとえばRma:t X O,9
’= 1 。Based on the obtained theoretical value, for example, Rma:t
'= 1.
Rmin x 1.1= m A4のようにして極値の
判定に用いる基準値m及びtをステップS4で計算する
。ステップS5及びS7で極大値ma:c(k) 極
小値m1n(k)の判定を行い、基準に対して外れたも
のはステップB6,8Bで除外する。さらにステップS
P、S11で極大値あるいは極小値が並んで存在してい
ないかどうかを判断し、並んで存在する場合にはステッ
プ810 、812でその最適な方を選択する。景終的
に得られたmax(k) 。Rmin x 1.1=m A4, and the reference values m and t used for determining the extreme value are calculated in step S4. In steps S5 and S7, the maximum value ma:c(k) and the minimum value m1n(k) are determined, and those that deviate from the reference are excluded in steps B6 and 8B. Further step S
In steps P and S11, it is determined whether or not local maximum values or local minimum values exist side by side. If they exist side by side, the optimal one is selected in steps 810 and 812. max(k) finally obtained.
mtn(k)を使い(a−1) へ(4−5)式により
ステップ813で膜厚を求めれば良い。Using mtn(k), the film thickness may be determined in step 813 by formula (4-5) to (a-1).
もし、極値が1個の場合には第9B図に示す流れ図を第
9A図のステップS13を実行する前に加えれば良い。If there is only one extreme value, the flowchart shown in FIG. 9B may be added before executing step S13 in FIG. 9A.
このとき膜厚は
によって求める。(4−4)式はA1が極大値の場合に
使用し、(4−5)式はA1が極小値の場合に使用する
。極値の数が0個の場合には(4−1)〜(4−3)式
あるいは(4−4)〜(4−5)式の方法では膜厚を計
算出来ない。そこで(5)式をdに関して解くと
但しに中0.1.2・、・
であり、K=Qとしてdを求める事が出来る。At this time, the film thickness is determined by: Equation (4-4) is used when A1 is the maximum value, and Equation (4-5) is used when A1 is the minimum value. When the number of extreme values is 0, the film thickness cannot be calculated using the methods of equations (4-1) to (4-3) or equations (4-4) to (4-5). Therefore, when formula (5) is solved with respect to d, it is found that the inside is 0.1.2·,·, and d can be found by setting K=Q.
仙の極値のある場合に門しても次数Kかに=2nd/λ
(7′Iで得られるので式(4
−1)〜(4−3)、(4−4)。Even if there is an extreme value of Sen, the order K = 2nd/λ
(7'I), so the formula (4
-1) to (4-3), (4-4).
(4−5)で求めたdを利用してKを求め、各波長の反
射率Rよりdを算出する事が出来る。K is obtained using d obtained in (4-5), and d can be calculated from the reflectance R of each wavelength.
(効果)
以上a見明したように本発明は測定値にバラツキがある
場合でも分光反射率の理論上の最大値、最小値を利用す
る事により所望の極値のみを検出し、正確な膜厚を検出
する事が出来る。(Effects) As seen above, the present invention detects only the desired extreme value by using the theoretical maximum and minimum values of spectral reflectance even when there are variations in the measured values, allowing accurate film formation. Thickness can be detected.
第1図(a) 、 (b)は本発明の原理訣明図、第2
図は理懇的な分光反射率を示すグラフで第3図〜第7図
は、測定のバラツキを持つ分光図はその作動説明用フロ
ーチャート図である。
1・・・分光器
2・・・試料ステージ
4印コントローラ
5・・・コンピュータFigures 1 (a) and (b) are diagrams explaining the principles of the present invention;
The figure is a graph showing reasonable spectral reflectance, and Figures 3 to 7 are flowcharts for explaining the operation of spectroscopic diagrams with measurement variations. 1... Spectrometer 2... Sample stage 4 mark controller 5... Computer
Claims (1)
において、 試料の分光反射率の理論上の最大値と最小値を計算し、
最大値より一定の基準値l、最小値より一定の基準値m
を決定し、 分光反射率の測定値より得られた極値に対し、基準値l
以上の場合に真の極大値とし、基準値m以下の場合に真
の極小値とすることにより、正確に膜厚を検出すること
を特徴とする膜厚測定方法。[Claims] A method for measuring film thickness from the interval between extreme values of spectral reflectance of a sample, comprising: calculating the theoretical maximum and minimum values of spectral reflectance of the sample;
A reference value l that is more constant than the maximum value, a reference value m that is more constant than the minimum value
is determined, and the reference value l is determined for the extreme value obtained from the measured value of spectral reflectance.
A film thickness measuring method characterized in that the film thickness is accurately detected by determining the true maximum value in the above cases and determining the true minimum value in the case below the reference value m.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP862786A JPS62165103A (en) | 1986-01-17 | 1986-01-17 | Method for measuring film thickness |
US06/935,381 US4787749A (en) | 1985-11-28 | 1986-11-26 | Method and apparatus for measuring the thickness of a thin film using the spectral reflection factor of the film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP862786A JPS62165103A (en) | 1986-01-17 | 1986-01-17 | Method for measuring film thickness |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62165103A true JPS62165103A (en) | 1987-07-21 |
Family
ID=11698186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP862786A Pending JPS62165103A (en) | 1985-11-28 | 1986-01-17 | Method for measuring film thickness |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62165103A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02163374A (en) * | 1988-12-19 | 1990-06-22 | Oki Electric Ind Co Ltd | Judging method for film thickness value in vacuum deposition |
JP2008188837A (en) * | 2007-02-02 | 2008-08-21 | Bridgestone Corp | Rubber member |
WO2014061408A1 (en) * | 2012-10-16 | 2014-04-24 | コニカミノルタ株式会社 | Method for measuring optical film thickness, system for measuring optical film thickness, and program for measuring optical film thickness |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5158971A (en) * | 1974-11-20 | 1976-05-22 | Nippon Naitoronikusu Kk | ATSUMIKEI |
JPS5365276A (en) * | 1976-11-25 | 1978-06-10 | Toshiba Corp | Rotary chemical evaporation apparatus for forming thin film |
JPS5458461A (en) * | 1977-10-18 | 1979-05-11 | Canon Inc | Measuring apparatus of physical constant |
JPS58113804A (en) * | 1981-12-28 | 1983-07-06 | Fujitsu Ltd | Film thickness controlling method |
JPS6073407A (en) * | 1983-09-30 | 1985-04-25 | Nippon Soken Inc | Film thickness monitor |
-
1986
- 1986-01-17 JP JP862786A patent/JPS62165103A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5158971A (en) * | 1974-11-20 | 1976-05-22 | Nippon Naitoronikusu Kk | ATSUMIKEI |
JPS5365276A (en) * | 1976-11-25 | 1978-06-10 | Toshiba Corp | Rotary chemical evaporation apparatus for forming thin film |
JPS5458461A (en) * | 1977-10-18 | 1979-05-11 | Canon Inc | Measuring apparatus of physical constant |
JPS58113804A (en) * | 1981-12-28 | 1983-07-06 | Fujitsu Ltd | Film thickness controlling method |
JPS6073407A (en) * | 1983-09-30 | 1985-04-25 | Nippon Soken Inc | Film thickness monitor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02163374A (en) * | 1988-12-19 | 1990-06-22 | Oki Electric Ind Co Ltd | Judging method for film thickness value in vacuum deposition |
JP2008188837A (en) * | 2007-02-02 | 2008-08-21 | Bridgestone Corp | Rubber member |
WO2014061408A1 (en) * | 2012-10-16 | 2014-04-24 | コニカミノルタ株式会社 | Method for measuring optical film thickness, system for measuring optical film thickness, and program for measuring optical film thickness |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3292029B2 (en) | Dry etching end point monitoring method and apparatus therefor | |
US5101111A (en) | Method of measuring thickness of film with a reference sample having a known reflectance | |
US5042949A (en) | Optical profiler for films and substrates | |
JP2637820B2 (en) | Optical film thickness measuring device | |
EP0650030A2 (en) | Apparatus for and method of evaluating multilayer thin films | |
CN100350403C (en) | Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection | |
GB2069130A (en) | Thin film thickness monitor | |
US6825938B2 (en) | Film thickness measuring method and step measuring method | |
US5118955A (en) | Film stress measurement system having first and second stage means | |
GB2126338A (en) | Interferometric measurement of short distances | |
JPS62165103A (en) | Method for measuring film thickness | |
JP3872559B2 (en) | Absorption spectrum judgment method using library stable calculation method | |
JP2000234912A (en) | Wafer thickness measuring equipment | |
US6309555B1 (en) | Method for determining thickness of material layer and chemical mechanical polishing endpoint | |
CN111829457B (en) | Method for detecting three-dimensional morphology of ultrathin film device based on structured light illumination microscope system | |
JPS6344106A (en) | Film thickness measuring method | |
JPH0731049B2 (en) | Optical film thickness measuring device | |
US20050194095A1 (en) | Semiconductor production apparatus | |
JPH01320409A (en) | Film thickness measuring method | |
JP2842241B2 (en) | Film thickness measurement method | |
JP3059714B1 (en) | Relative position measurement device | |
JPH1194525A (en) | Method and device for measuring film thickness | |
JPS61246607A (en) | Measuring method for film thickness | |
JPS59168309A (en) | Displacement-quantity measuring device | |
JPH0674716A (en) | Optical film thickness measuring method |