CN111829457B - Method for detecting three-dimensional morphology of ultrathin film device based on structured light illumination microscope system - Google Patents
Method for detecting three-dimensional morphology of ultrathin film device based on structured light illumination microscope system Download PDFInfo
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- 230000010363 phase shift Effects 0.000 claims abstract description 13
- 238000005259 measurement Methods 0.000 claims abstract description 12
- 230000008859 change Effects 0.000 claims abstract description 7
- 238000000605 extraction Methods 0.000 claims abstract description 4
- 230000004044 response Effects 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
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- 238000004364 calculation method Methods 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 43
- 239000010410 layer Substances 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000386 microscopy Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- 238000000572 ellipsometry Methods 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
- G01B11/254—Projection of a pattern, viewing through a pattern, e.g. moiré
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Abstract
The invention discloses a three-dimensional shape detection method of an ultrathin film device based on a structured light illumination microscope system. The method comprises the steps of projecting a light stripe pattern of an equiphase change structure on the surface of a measured object, scanning in the z direction by using an upper computer, obtaining a change curve of a stripe modulation degree along with a scanning distance by using a phase shift method, obtaining an accurate peak position by peak extraction and combining an algorithm of nonlinear fitting, and further calculating the film thickness and the three-dimensional shape of the measured object. The invention can accurately measure the thickness of the film layer of the ultrathin film device, and simultaneously can quickly obtain the three-dimensional morphology structure of the ultrathin film device, and has the advantages of non-destructiveness, high measurement efficiency, high precision, wide application range and the like.
Description
Technical Field
The invention relates to the technical field of optical detection, in particular to a method for detecting the three-dimensional morphology of an ultrathin film device based on a structured light illumination microscope system.
Background
With the development of micro-nano manufacturing and processing technology, the structure of a film device is more and more complex, for example, a vibrating membrane of a Capacitive Micromachined Ultrasonic Transducer (CMUT) is more and more thin, so that the difficulty of nondestructive testing is increased. In addition to thickness, the three-dimensional morphology of the film layer device is also an important indicator for characterizing the device performance. For example, in flexible electronics manufacturing, it is necessary to obtain deformation characteristics of film-type materials by topography detection. How to accurately, efficiently and nondestructively obtain the three-dimensional morphology structure of the micro-nano scale film surface device becomes a key research direction in the field of micro-nano detection. The optical detection method is widely applied by virtue of the characteristics of high detection speed, high detection precision, small sample destructiveness and the like.
Common optical three-dimensional detection technologies can be classified into an ellipsometry, a spectroscopic analysis, an interference method and the like according to principles. However, the ellipsometry and the spectroscopic analysis adopt a single-point detection mode, and when the ellipsometry and the spectroscopic analysis are used for measuring the three-dimensional morphology of the membrane, a scanning mechanism needs to be combined, so that the detection efficiency is difficult to improve. Another method based on measuring the interference light must obtain the interference signal waveform of each thickness in advance, and obtain the thickness information through a matching algorithm, and the application thereof is extremely limited. In order to realize high-efficiency surface detection, a morphology detection method based on structured light illumination microscopy is provided.
The method adopts sine distribution or grid-shaped illumination light for modulation, and changes of the modulation degree of the projection image in the process are related to the surface structure of the sample by vertically moving the sample, so that the three-dimensional topography information of the surface of the object can be obtained. And calculating to obtain a fringe image modulation degree curve through a phase shift algorithm, and then obtaining the maximum value of the modulation degree of each pixel point, namely the relative height of the point of the sample by using algorithms such as a peak value separation method and the like. After point-by-point calculation, the surface topography of the object can be recovered through the information.
For an object with a single-layer transparent film structure, the optical information obtained by the detector includes light reflected by the surface of the film layer and the surface of the substrate respectively. Therefore, the corresponding modulation degree curve can theoretically calculate the relative height of the two surfaces, and further obtain the thickness of the film layer. However, as the thickness of the film layer becomes smaller (less than 1 μm), the accuracy of the conventional separation algorithm becomes lower, and the information of the surface topography of the film layer and the substrate surface cannot be separated.
In conclusion, the optical measurement method based on the structured light illumination microscopy has the characteristics of high detection efficiency, high precision and the like, and has important significance in researching the possibility of the method in the thickness measurement and the three-dimensional morphology detection of the ultrathin film layer micro-nano device.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a method for detecting the three-dimensional morphology of an ultrathin film device based on a structured light illumination microscope system, which can detect the morphology of the ultrathin film layer micro-nano device with high precision on the premise of ensuring the detection efficiency.
The technical scheme adopted by the invention is as follows: a method for detecting the three-dimensional shape of an ultrathin film device based on a structured light illumination microscopic system comprises the steps of generating sinusoidal grating stripes by using a DMD (digital micromirror device), and modulating structural information of a sample to be detected; scanning the sample in a direction perpendicular to the optical axis, wherein the fringe pattern collected by the CCD is defocused from defocusing to focusing and then defocusing; simultaneously changing grating stripes in equal phase, and acquiring a plurality of modulated sample images; analyzing and obtaining a multi-peak modulation degree response curve from the images by using a phase shift algorithm; and extracting the peak value corresponding to the surface of the transparent film and the surface of the substrate by adopting a method of combining peak value extraction with nonlinear curve fitting, further obtaining the relative thickness of the film structure, and further combining the reflectivity of the material to accurately reconstruct the three-dimensional morphology of each layer structure of the film coating sample. The method comprises the following steps:
step 1: generating structured light by using a Digital micromirror array (DMD), projecting 8 sinusoidal grating stripes with equal phase difference in sequence, and collecting and storing a reflection signal on the surface of the structure to be detected to an upper computer by using a CCD (charge coupled device);
step 2: controlling PZT to vertically scan the measured object at equal step distances, repeating the step 1 in each scanning, and collecting and storing images;
and 3, step 3: calculating a response curve of the modulation degree of each pixel point changing along with the scanning position by using a phase shift algorithm according to all the images obtained in the step 1 and the step 2;
and 4, step 4: extracting rough positions of two peak values of each modulation degree response curve by using a peak value method, fitting the modulation degree response curves by using the rough positions as initial values of fitting of nonlinear curves, and obtaining the precise positions of the peak values;
and 5: and calculating the thickness of the film layer according to the accurate peak position, the scanning step pitch and the refractive index of each layer of material, and recovering to obtain the three-dimensional appearance of the sample.
Further, in step 4, a linear combination of single-peak type functions is used to fit the modulation degree response curve, wherein the single-peak type function is a gaussian function.
Furthermore, in the step 4, a peak value method is used for preliminarily extracting the peak value position, so that the fitting error is reduced, and the accuracy of measurement is ensured.
Furthermore, under the incoherent model, the reflected signals of the film surface and the substrate surface are assumed to be mutually independent, a linear superposition form of a double-Gaussian function is adopted as a fitting model, and the problem that the ultrathin film layer cannot be detected is solved through nonlinear curve fitting.
Further, since the non-linear curve fitting method is very sensitive to the initial value, if there is no proper initial value, the error of the fitting result becomes larger and larger as the film thickness becomes smaller and smaller, resulting in inaccurate measurement result. Therefore, it is necessary to obtain the rough positions of the two peaks by the peak method as the initial values of the fitting to ensure the measurement accuracy.
Furthermore, the provided measuring method can realize the accurate measurement of the ultrathin film layer device, has the advantages of non-destructiveness, large visual field, high measuring efficiency and high accuracy, and can quickly and accurately reconstruct the three-dimensional appearance of the whole sample while measuring the film thickness.
The basic principle of the invention is as follows: theoretically, the modulation degree response curve is in the form of a first Bessel function, but in the detection of the micro-nano device, the influence of side lobes can be ignored and is approximate to a Gaussian function. The boundary between the film and the air and the boundary between the film and the substrate are correspondingly represented as a plurality of peak values on a modulation response curve, and the thickness and the reconstructed three-dimensional morphology can be measured by extracting the positions of the peak values and combining the scanning step distance and the material refractive index. However, when the ultrathin film layer is measured, the position of each peak cannot be accurately detected by using the conventional peak value extraction method, and finally, the thickness detection and the three-dimensional shape recovery fail. In the invention, under the incoherent condition, the reflected signals of the film surface and the substrate surface are mutually independent, namely a linear superposition form of a double-Gaussian function is adopted as a fitting model, and the problem that the ultrathin film layer cannot be detected is solved through nonlinear curve fitting. Further research shows that the nonlinear curve fitting method is very sensitive to an initial value, if no proper initial value is available, when the thickness of a film layer is smaller and smaller, the error of the fitting result is larger and larger, and the measurement result is inaccurate, so that rough positions of two peak values need to be obtained through a peak value method to serve as the initial value of fitting, and the measurement precision is guaranteed.
Compared with the prior art, the invention has the beneficial effects that:
(1) the measuring method provided by the invention is based on the structured light illumination microscopy and uses a nonlinear fitting method, the precise measurement of the ultrathin film layer device can be realized, and the precision is superior to 10nm when measuring a film layer structure sample with a single layer thickness of less than 1100 nm.
(2) Compared with the existing ultra-thin film thickness detection means, the invention has the advantages of non-destructiveness, large view field and the like.
(3) The invention can reconstruct the three-dimensional appearance of the whole sample with high precision and high efficiency while measuring the film thickness.
Drawings
FIG. 1 is a graph of the variation of film thickness detection error with different thicknesses based on structured light illumination microscopy;
FIG. 2 shows the results of measuring 1098.95nm thick samples of photoresist film using the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described below with reference to the accompanying drawings by referring to specific examples.
The invention aims to provide a method for detecting the three-dimensional morphology of an ultrathin film device based on a structured light illumination microscopic system. The operation of the method is described in detail below with reference to an example:
step 1: scanning a sample by using a built microscope system based on structured light illumination, sequentially projecting 8 sinusoidal grating stripes with equal phase difference in each step of scanning, and storing an image into an upper control machine;
step 2: calculating a modulation degree response curve of the modulation degree of each pixel point on the sample along with the change of the scanning distance according to a phase shift method, wherein the calculation expression is as follows:
wherein IiAnd (x, y) is the light intensity distribution of the CCD collected image in the phase shift of the ith step, and the total phase shift step number N is equal to 8.
And 3, step 3: due to the stripe effect of the structured light, when a focusing plane passes through the position where the film is respectively located at the boundary of air and the substrate during scanning, the modulation degree just has a peak value, so that the film thickness can be calculated and the three-dimensional morphology can be reconstructed by accurately extracting the position of the peak value. In this embodiment, a linear superposition of two custom gaussian functions is used as a fitting function, and the expression is:
wherein, W1And W2Representing the half-height width of two Gaussian waveforms, wherein the half-height width is a fixed parameter calculated according to parameters such as the refractive index of a film material, the transfer function of an imaging system, the period of a projection stripe and the like; a. the1And A2Peak amplitudes of the two Gaussian curves are respectively; x1And X2Respectively representing the corresponding positions of the two peaks, and the initial value of the two peaks is the rough position of the peak obtained by the peak method.
And 4, step 4: and (3) combining the accurate positions of the two peak values obtained in the steps with the information of the reflectivity n, the scanning step distance d and the like of the film material, and calculating the thickness of the film according to an expression:
h＝n·d·|X1-X2| (3)
and integrating the film thickness data of all the pixel points, and finally reconstructing the three-dimensional appearance of the sample.
Example (b):
the present invention is described below by taking a sample of a silicon dioxide substrate coated with a photoresist film as an example:
(1) RZJ-304 photoresist was spin coated on a silicon dioxide substrate and exposed to light to form a thin film. The thickness of the film is 1098.95nm by measuring with a step profiler;
(2) scanning the edge step part of the thin film by using a built microscope system based on structured light illumination, wherein the scanning step distance is 50nm, and 80 steps are total from 0nm to 4000nm, each step of scanning sequentially projects 8 sinusoidal grating stripes with equal phase difference, and the images are stored in an upper control machine;
(3) calculating a modulation degree response curve of the modulation degree of each pixel point on the sample along with the change of the scanning distance according to a phase shift method, and then carrying out nonlinear fitting according to a formula (2) by using a peak method to obtain two peak point accurate positions X of each modulation degree curve1And X2The thickness of the photoresist film is 1090.17nm according to the formula (3), the data of all the pixel points are integrated, and the three-dimensional appearance of the sample is finally reconstructed, and the result is shown in fig. 2.
Claims (1)
1. A three-dimensional shape detection method of an ultrathin film device based on a structured light illumination microscopic system is characterized by comprising the following steps: projecting the light stripe pattern of the equiphase change structure on the surface of a measured object, scanning in the z direction by using an upper computer, obtaining a change curve of the stripe modulation degree along with the scanning distance by using a phase shift method, then obtaining an accurate peak position by combining an algorithm of peak extraction and nonlinear fitting, and further calculating the film thickness and the three-dimensional shape of the measured object;
the method comprises the following steps:
step 1: generating structured light by using a Digital micromirror array (DMD), projecting 8 sinusoidal grating stripes with equal phase difference in sequence, and collecting and storing a reflection signal on the surface of the structure to be detected to an upper computer by using a CCD (charge coupled device);
step 2: controlling PZT to vertically scan the measured object at equal step distances, repeating the step 1 in each scanning, and collecting and storing images;
calculating a modulation degree response curve of the modulation degree of each pixel point on the sample along with the change of the scanning distance according to a phase shift method, wherein the calculation expression is as follows:
wherein Ii(x, y) is the light intensity distribution of the CCD collected image during the phase shift of the ith step, and the total phase shift step number N is equal to 8;
and step 3: calculating a response curve of the modulation degree of each pixel point changing along with the scanning position by using a phase shift algorithm according to all the images obtained in the step 1 and the step 2;
because the effect of the structured light striations, when a focusing plane passes through the position where the film is respectively located at the boundary of air and a substrate during scanning, the modulation degree just has a peak value, so that the film thickness can be calculated and the three-dimensional morphology can be reconstructed by accurately extracting the position of the peak value, the linear superposition of two self-defined Gaussian functions is adopted as a fitting function, and the expression is as follows:
wherein, W1And W2Representing the half-height width of two Gaussian waveforms, wherein the half-height width is a fixed parameter calculated according to parameters such as the refractive index of a film material, the transfer function of an imaging system, the period of a projection stripe and the like; a. the1And A2Peak amplitudes of the two Gaussian curves are respectively; x1And X2Respectively representing the corresponding positions of the two peaks, wherein the initial value of the two peaks is the rough position of the peak obtained by a peak method;
and 4, step 4: extracting rough positions of two peak values of each modulation degree response curve by using a peak value method, fitting the modulation degree response curves by using the rough positions as initial values of fitting of nonlinear curves, and obtaining the precise positions of the peak values;
and 5: calculating the thickness of the film layer according to the accurate peak position, the scanning step distance and the refractive index of each layer of material, and recovering to obtain the three-dimensional appearance of the sample;
and (3) combining the accurate positions of the two peaks obtained in the steps with the reflectivity n and the scanning step distance d information of the film material, and calculating the thickness of the film according to an expression:
h＝n·d·|X1-X2| (3)
integrating the film thickness data of all the pixel points, and finally reconstructing the three-dimensional appearance of the sample;
under the incoherent model, assuming that the reflection signals of the film surface and the substrate surface are mutually independent, adopting a linear superposition form of a double-Gaussian function as a fitting model, and solving the problem that the ultrathin film layer cannot be detected through nonlinear curve fitting;
because the nonlinear curve fitting method is very sensitive to the initial value, if no proper initial value exists, when the film thickness is smaller and smaller, the error of the fitting result is larger and larger, and the measurement result is inaccurate, so that the rough positions of two peak values are required to be obtained by a peak value method and are used as the fitting initial value to ensure the measurement precision;
the provided measuring method can realize accurate measurement of the ultrathin film layer device, has the advantages of non-destructiveness, large field of view, high measuring efficiency and high accuracy, and can quickly and accurately reconstruct the three-dimensional appearance of the whole sample while measuring the film thickness.
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