CN109341554B - Device and method for measuring film thickness - Google Patents
Device and method for measuring film thickness Download PDFInfo
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- CN109341554B CN109341554B CN201811583928.1A CN201811583928A CN109341554B CN 109341554 B CN109341554 B CN 109341554B CN 201811583928 A CN201811583928 A CN 201811583928A CN 109341554 B CN109341554 B CN 109341554B
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- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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Abstract
The invention discloses a device and a method for measuring film thickness, wherein light beams emitted by a light source form linear light beams through a light beam shaper, the linear light beams sequentially pass through a fixed polarizer and a rotary polarizer to enter a film layer on the surface of a wafer and are reflected and refracted in the film layer on the surface of the wafer, the linear light beams enter a focusing grating unit after being reflected by the film layer, the focusing grating unit disperses the reflected linear light beams into a two-dimensional spectrum, the two-dimensional spectrum enters an image sensor through an analyzer to obtain a two-dimensional spectrum image related to a light intensity signal, and the film thickness of the corresponding position on the surface of the wafer is obtained according to the light intensity signal on the two-dimensional spectrum image. The device and the method for measuring the film thickness can simultaneously measure the reflection signals of a plurality of points, can improve the measurement speed, and greatly reduce the mechanical movement in the measurement process.
Description
Technical Field
The invention relates to the field of film detection, in particular to a device and a method for measuring film thickness.
Background
The measurement of the thickness of the thin film is essential in the research of materials and the manufacture of integrated circuits, and particularly in the manufacture of integrated circuits, the coating of photoresist, the growth of the thin film, the test of etching and the like all need to accurately measure the topography of the film layer on the surface of the silicon wafer after each process. Taking a 12-inch silicon wafer as an example, in order to detect the coating effect of the photoresist, 25 points are usually measured in the x and y directions to represent the distribution of the photoresist on the whole silicon wafer.
Ellipsometry is the most prominent thin film parameter measurement technique. The technology obtains information such as thickness and refractive index of a sample by measuring the intensity and phase change (i.e. ellipsometric parameters Ψ and Δ) of the polarization state of light reflected by a measured object.
The ellipsometry parameters Ψ and Δ are not physical quantities directly measured, but the intensity I of the reflected light is measured in real time while modulating the polarization state, and then the ellipsometry parameters Ψ and Δ are obtained by fourier transform from the variation relationship of the intensity with time, and finally the corresponding thickness and refractive index are calculated by modeling and fitting. Since the mathematical operation can be performed off-line, the reflection intensity I at each wavelength modulated by the polarization state is the most direct physical quantity to be measured for the device.
At present, the mainstream measurement mode is to use an ellipsometer to measure a single point, when the number of measurement points is large, the time consumption is long, and mechanical motion is needed after each measurement of one point, which is not beneficial to the control of precision. It is therefore desirable to find a new way to measure the reflected signals from multiple points at once, while also facilitating the collection and processing of the data.
Disclosure of Invention
The invention aims to provide a device and a method for measuring film thickness, which can simultaneously measure reflection signals of a plurality of points, improve the measurement speed and greatly reduce mechanical movement in the measurement process.
In order to achieve the purpose, the invention adopts the following technical scheme: a device for measuring film thickness is used for measuring the film thickness of n points to be measured on a straight line on the surface of a wafer; the wide-spectrum polarization analyzer comprises a wide-spectrum light source for emitting light beams, a light beam shaper, a fixed polarizer, a rotating polarizer, a focusing grating unit, an analyzer and an image sensor;
the wide-spectrum light source emits light beams which form linear light beams through the light beam shaper, the linear light beams cover all points to be measured, the linear light beams sequentially pass through the fixed polarizer and the rotating polarizer to enter a film layer on the surface of a wafer and are reflected in the film layer on the surface of the wafer, the linear light beams enter the focusing grating unit after being reflected by the film layer, the focusing grating unit disperses the reflected linear light beams into two-dimensional spectrums, the dispersion direction is orthogonal to the direction of a straight line where the linear light beams are located, the two-dimensional spectrums enter the image sensor through the analyzer to obtain two-dimensional spectrum images related to light intensity signals, and the two orthogonal directions of the two-dimensional spectrum images respectively correspond to the position where the linear light beams are incident into the film layer on the surface of the wafer and the wavelength of incident light at the position; and obtaining the film layer thickness of the corresponding position on the surface of the wafer according to the light intensity signal on the two-dimensional spectrum image, wherein n is an integer degree which is more than or equal to 1.
Further, the focusing grating unit comprises a grating and a focusing optical system, the linear beam enters the grating after being reflected by the film layer, the grating disperses the reflected linear beam into a two-dimensional spectrum, and the two-dimensional spectrum sequentially enters the image sensor after passing through the focusing optical system and the analyzer.
Furthermore, the grating is a one-dimensional grating, the groove direction of the grating is along the Y-axis direction, and the groove period of the grating is along the X-axis direction; the direction of the straight line of the linear light beam is the Y-axis direction.
Further, the linear light beam is dispersed on the one-dimensional grating, and the dispersion direction is the X-axis direction, so that a two-dimensional spectrum is formed; the Y-axis direction in the two-dimensional spectrum correspondingly represents the position of the linear light beam incident to the wafer surface film layer, and the X-axis direction in the two-dimensional spectrum corresponds to the wavelength of the incident light at the position.
Further, the grating is a reflective blazed grating, and the maximum light intensity of the grating is +1 order or-1 order.
Further, the focusing optical system is a concave mirror or a convex lens, and is used for converging the two-dimensional spectrum into the image sensor.
Further, the focusing grating unit is a grating engraved on the concave mirror surface.
Further, the incident angle of the linear light beam to the surface film layer of the wafer is 60-75 degrees.
The invention provides a method for measuring film thickness, which comprises the following steps:
s01: setting n points to be tested on the surface of the wafer, wherein the n points are positioned on a straight line, and n is an integer greater than or equal to 1;
s02: the method comprises the steps that a light source is turned on, light beams emitted by a broad-spectrum light source pass through a light beam shaper to form linear light beams, the linear light beams cover all points to be measured, the linear light beams sequentially pass through a fixed polarizer and a rotating polarizer to enter a film layer on the surface of a wafer and are reflected and refracted in the film layer on the surface of the wafer, the linear light beams enter a focusing grating unit after being reflected by the film layer, the focusing grating unit disperses the reflected linear light beams into two-dimensional spectrums, the linear light beams cover all the points to be measured, the dispersion direction is orthogonal to the direction of the linear light beams, and the two-dimensional spectrums enter an image sensor through an analyzer to obtain two-dimensional spectrum images related to light intensity; the two orthogonal directions of the two-dimensional spectral image respectively correspond to the position of the linear light beam incident into the surface film layer of the wafer and the wavelength of the incident light at the position;
s03: fourier transform is carried out on the light intensity signals at all positions in the two-dimensional spectral image, and the film thickness of the n points to be measured is obtained through modeling and fitting
The invention has the beneficial effects that: according to the invention, different measuring points on the same straight line on the surface of the wafer and respective spectral information of each measuring point are expanded in two orthogonal directions, namely, signal light in the Y direction is diffracted in the X direction on the surface of the grating, so that a two-dimensional light intensity spectrum is formed in the XY plane. The two-dimensional light intensity spectrum is finally recorded by the image sensor, and the film thickness of different measuring points can be calculated according to the light intensity signal of each position.
Drawings
FIG. 1 is a schematic view of an apparatus for measuring film thickness according to the present invention.
In the figure: the device comprises a wafer 1, a light source 2, a light beam shaper 3, a fixed polarizer 4, a rotating polarizer 5, a grating 6, a two-dimensional spectrum 7, a focusing optical system 8, an analyzer 9 and an image sensor 10.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the apparatus for measuring film thickness provided by the present invention is used for measuring the thickness of a film layer on the surface of a wafer; the device comprises a broad spectrum light source 2 for emitting light beams, a light beam shaper 3, a fixed polarizer 4, a rotating polarizer 5, a focusing grating unit, an analyzer 9 and an image sensor 10. The wide light beam emitted by the light source 2 passes through the light beam shaper 3 to form a linear light beam, the linear light beam sequentially passes through the fixed polarizer 4 and the rotating polarizer 5 to enter a film layer on the surface of the wafer 1 and is reflected and refracted in the film layer on the surface of the wafer, the linear light beam enters the focusing grating unit after being reflected by the film layer, the focusing grating unit disperses the reflected linear light beam into a two-dimensional spectrum 7, the dispersion direction is orthogonal to the direction of a straight line where the linear light beam is located, the two-dimensional spectrum enters the image sensor 10 through the analyzer 9 to obtain a two-dimensional spectrum image related to a light intensity signal, and the two orthogonal directions of the two-dimensional spectrum image respectively correspond to the position where the linear light beam is incident into the film layer on the; and obtaining the film thickness of the corresponding position on the surface of the wafer according to the light intensity signal on the two-dimensional spectral image.
The broad spectrum light source of the present invention emits a light beam having a spectral range at least covering 400nm to 800nm, typically a gas light source such as a xenon lamp. A broad spectrum light source means that the light source covers a broad spectral range. The light beam emitted by the broad spectrum light source is changed into a linear light beam through a light beam shaper, and a fixed polarizer and a rotating polarizer which are arranged in front of the linear light beam are used for controlling the polarization state of the detection light. The points to be measured on the surface of the wafer are positioned on the same straight line, the linear light beam covers all the points to be measured, and the incident angle of the light beam to the film layer on the surface of the wafer is 60-75 degrees.
The focusing grating unit in the invention can be a separated grating 6 and a focusing optical system 8, as shown in fig. 1, or the grating can be directly engraved on the concave mirror surface, and simultaneously functions as the grating and the focusing optical system,
when the optical fiber laser comprises the grating and the focusing optical system, the linear light beam enters the grating 6 after being reflected by the film layer, the grating 6 disperses the reflected linear light beam into two spectrums 7, and the two-dimensional spectrums enter the image sensor after sequentially passing through the focusing optical system and the analyzer. The grating is a one-dimensional grating, the scribing direction of the grating is the Y-axis direction, and the scribing period of the grating is along the X-axis direction; the direction of the line beam corresponds to the Y-axis direction. The linear light beam is dispersed on the one-dimensional grating, and the dispersion direction is the X-axis direction, so that a two-dimensional spectrum is formed; the Y-axis direction in the two-dimensional spectrum corresponds to the position of the linear light beam incident on the surface film layer of the wafer, and the X-axis direction in the two-dimensional spectrum corresponds to the wavelength of the incident light at the position. Referring to FIG. 1, the length of the grating in the Y-axis direction must be greater than that of the gratingThe length P between the points to be measured1-PnPoint P to be measured1-PnThe emitted light on the line segment is scattered in the X-axis direction after being diffracted by the grating 6, and a bright area formed by the +1 order or the-1 order of the light is a two-dimensional spectrum 7 which represents the light intensity distribution in the XY plane of the point to be measured. Measurement point P1After the reflected light is diffracted by the grating 6, the +1 order or the-1 order after dispersion is a line segment from the upper left corner to the upper right corner of the two-dimensional spectrum 7; measurement point PnAfter the reflected light is diffracted by the grating 6, the dispersed +1 order or-1 order is a line segment from the lower left corner to the lower right corner of the two-dimensional spectrum 7. The intensity at each position of the two-dimensional spectrum 7 is therefore I (x, y), which corresponds in the x-direction to the wavelength λiY direction corresponds to the measurement point Pj. Wherein n represents n to-be-detected points, j represents the jth to-be-detected point, n is an integer greater than or equal to 2, and j is an integer less than or equal to n.
The grating can be a reflective blazed grating, and the maximum light intensity of the grating is +1 order or-1 order. The focusing optical system is a concave mirror or a convex lens and is used for converging the two-dimensional spectrum into the image sensor. The image sensor is also a two-dimensional image sensor, the two-dimensional image spectrum received by the image sensor corresponds to the two-dimensional spectrum after grating scattering, and the two-dimensional spectrum needs to completely present necessary wavelength information after grating scattering, namely the number of pixels of the two-dimensional image spectrum in the Y-axis direction is greater than or equal to the number of points to be measured on the surface of the wafer, the number of pixels in the X-axis direction is greater than or equal to a spectral range to be measured, and the spectral range to be measured refers to a difference value between a maximum wavelength and a minimum wavelength necessary for data fitting.
When the focal grating unit is a grating engraved on the surface of the concave mirror, the specific requirements of the grating are basically the same as those described above, and only the grating and the focusing optical system are combined together to perform the scattering and focusing of the linear beam, which is not described in detail herein.
The invention provides a method for measuring film thickness, which comprises the following steps:
s01: setting n points to be measured on a straight line on the surface of the wafer;
s02: opening a broad spectrum light source, enabling a light beam emitted by the light source to pass through a beam shaper to form a linear light beam, enabling the linear light beam to sequentially pass through a fixed polarizer and a rotary polarizer to enter a film layer on the surface of a wafer and to be reflected and refracted in the film layer on the surface of the wafer, enabling the linear light beam to enter a focusing grating unit after being reflected by the film layer, enabling the reflected linear light beam to be dispersed into a two-dimensional spectrum by the focusing grating unit, enabling the linear light beam to cover all points to be measured, enabling the dispersion direction to be orthogonal to the direction of the linear light beam, enabling monochromatic light to enter an image sensor through an analyzer, and obtaining a; wherein, the direction of the linear light beam refers to the direction of the straight line where the linear light beam is located; two orthogonal directions of the two-dimensional spectral image respectively correspond to the position of the linear light beam incident into the surface film layer of the wafer and the wavelength of the incident light at the position;
s03: and performing Fourier transform on the light intensity signals at each position in the two-dimensional spectral image, and obtaining the film thickness of the n points to be measured through modeling and fitting.
Intensity I (X, y) of each position in the two-dimensional spectral image, whose X direction corresponds to wavelength λiY-direction corresponding to the measurement point Pj. The light intensity signal I thus detected and the initial light intensity I0The relation between I (x, y) and I0f[λi,Pj,ωt,n(λi),k(λi),d]Wherein λ isiIs a wavelength, PjFor the jth measurement point,. omega.t denotes the modulation of the polarization state, n (lambda)i) Is the refractive index at this wavelength, k (λ)i) D is the film thickness at the measurement point. Fourier transformation is carried out on the wafer to obtain ellipsometric parameters psi and delta, a film structure model and a dispersion model are established for the measured wafer, and the model is used for fitting the intensity and phase change of the polarization state of each measuring point, namely the ellipsometric parameters psi and delta, so that the corresponding film thickness can be obtained.
It is worth to be noted that, in the present invention, different measurement points on a straight line and the respective spectral information of each measurement point are spread in two orthogonal directions, that is, the signal light in the Y direction is diffracted in the X direction on the grating surface, and a two-dimensional spectrum is formed in the XY plane. It is also within the scope of the present invention to simply swap the X and Y coordinate axes.
The above description is only a preferred embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all equivalent structural changes made by using the contents of the specification and the drawings of the present invention should be included in the scope of the appended claims.
Claims (9)
1. A device for measuring film thickness is used for measuring the film thickness of n points to be measured on a straight line on the surface of a wafer; the device is characterized by comprising a wide-spectrum light source for emitting a light beam, a light beam shaper, a fixed polarizer, a rotating polarizer, a focusing grating unit, an analyzer and an image sensor;
the wide-spectrum light source emits light beams which form linear light beams through the light beam shaper, the linear light beams cover all points to be measured, the linear light beams sequentially pass through the fixed polarizer and the rotary polarizer to enter a film layer on the surface of a wafer and are reflected and refracted in the film layer on the surface of the wafer, the linear light beams enter the focusing grating unit after being reflected by the film layer, the focusing grating unit disperses the reflected linear light beams into two-dimensional spectrums, the dispersion direction is orthogonal to the direction of a straight line where the linear light beams are located, monochromatic light enters the image sensor through the analyzer to obtain two-dimensional spectrum images related to light intensity signals, and the two orthogonal directions of the two-dimensional spectrum images respectively correspond to the position where the linear light beams are incident into the film layer on the surface of the wafer and the wavelength of incident light at the position; and obtaining the film thickness of the corresponding position on the surface of the wafer according to the light intensity signal on the two-dimensional spectral image, wherein n is an integer greater than or equal to 1.
2. The apparatus according to claim 1, wherein the focusing grating unit includes a grating and a focusing optical system, the linear beam enters the grating after being reflected by the film, the grating disperses the reflected linear beam into a two-dimensional spectrum, and the two-dimensional spectrum enters the image sensor through the focusing optical system and the analyzer in sequence.
3. The apparatus according to claim 2, wherein the grating is a one-dimensional grating, the groove direction of the grating is along the Y-axis direction, and the groove period of the grating is along the X-axis direction; the direction of the straight line of the linear light beam is the Y-axis direction.
4. The apparatus according to claim 3, wherein the linear beam is dispersed on the one-dimensional grating, and the dispersion direction is the X-axis direction, forming a two-dimensional spectrum; the Y-axis direction in the two-dimensional spectrum corresponds to the position of the linear light beam incident on the surface film layer of the wafer, and the X-axis direction in the two-dimensional spectrum corresponds to the wavelength of the incident light at the position.
5. The apparatus for measuring film thickness according to claim 3, wherein the grating is a reflective blazed grating having a maximum light intensity of +1 order or-1 order.
6. An apparatus according to claim 2, wherein the focusing optical system is a concave mirror or a convex lens.
7. An apparatus for measuring a film thickness according to claim 1, wherein the focusing grating unit is a grating engraved on a concave mirror surface.
8. The apparatus of claim 1, wherein the incident angle of the linear beam to the film layer on the wafer surface is 60-75 °.
9. A method for measuring a film thickness using the apparatus of claim 1, comprising the steps of:
s01: setting n points to be tested on the surface of the wafer, wherein the n points are positioned on a straight line, and n is an integer greater than or equal to 1;
s02: opening a broad spectrum light source, enabling light beams emitted by the light source to pass through a light beam shaper to form linear light beams, enabling the linear light beams to cover all points to be measured, enabling the linear light beams to sequentially pass through a fixed polarizer and a rotating polarizer to enter a film layer on the surface of a wafer and to be reflected and refracted in the film layer on the surface of the wafer, enabling the linear light beams to enter a focusing grating unit after being reflected by the film layer, enabling the reflected linear light beams to be dispersed into two-dimensional spectrums by the focusing grating unit, enabling the linear light beams to cover all points to be measured, enabling the dispersion direction to be orthogonal to the direction of the linear light beams, enabling the monochromatic light to enter an image sensor through an analyzer, and obtaining two-dimensional; the two orthogonal directions of the two-dimensional spectral image respectively correspond to the position of the linear light beam incident into the surface film layer of the wafer and the wavelength of the incident light at the position;
s03: and performing Fourier transform on the light intensity signals at each position in the two-dimensional spectral image, and obtaining the film thickness of the n points to be measured through modeling and fitting.
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| CN112729133B (en) * | 2020-12-18 | 2023-02-24 | 广东省大湾区集成电路与系统应用研究院 | Method and device for measuring film thickness based on diffraction intensity of detection grating |
| CN113945157A (en) * | 2021-10-15 | 2022-01-18 | 长鑫存储技术有限公司 | Film thickness testing device |
| CN117268270B (en) * | 2023-11-23 | 2024-02-06 | 中国航发北京航空材料研究院 | Real-time monitoring device and method for continuous chemical vapor deposition interface layer thickness |
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