JPS62164866A - Film forming mask device - Google Patents

Film forming mask device

Info

Publication number
JPS62164866A
JPS62164866A JP536086A JP536086A JPS62164866A JP S62164866 A JPS62164866 A JP S62164866A JP 536086 A JP536086 A JP 536086A JP 536086 A JP536086 A JP 536086A JP S62164866 A JPS62164866 A JP S62164866A
Authority
JP
Japan
Prior art keywords
substrate
mask
film forming
film
spring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP536086A
Other languages
Japanese (ja)
Inventor
Hiromi Kakinuma
柿沼 博美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP536086A priority Critical patent/JPS62164866A/en
Publication of JPS62164866A publication Critical patent/JPS62164866A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a sharp and precise pattern on a substrate by pressing the intermediate part of a mask by a set spring to the substrate in tight contact therewith and positioning the set spring in a manner as not to hinder particles for vapor deposition. CONSTITUTION:The substrate 7 fixed to a substrate frame 6 is pressed by means of positioning pins 2 and receiving pins 3 onto the mask 5 for film formation which is fixed to a mask frame 1 and on which a pattern is formed. One end of the set spring 10 is attached to the mask frame 1 by means of a screw 11 and the other end of the set spring 10 is bent to press the intermediate part of the mask 3 to the substrate 7 in tight contact therewith. The space between the transverse side 10a of the set spring 10 and the film forming part of the substrate is so determined as to be made >=4 times the diameter or width of the set spring 10. The sharp and precise pattern is thereby formed onto the substrate 7 even if the incident angle of the film forming material on the substrate 7 increases.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体板、絶縁板、金属板など基板にマス
クを当て、蒸着などによりパターンを成膜するだめの、
成膜マスク装置に関する0〔従来の技術〕 第7図は例えば「真空蒸着」((株)アダネ社出版)に
示された、従来の一般的な成膜マスク装置を示す断面図
である。1はマスク枠で、1対の位置決めビン2.複数
の基板受はビン3及び基板押付けばねへか固着されてい
る05はこれらのビン2に通され位置決めされた成膜用
マスクで、0.05〜0.5mm厚さのステンンス鋼、
42合金、モリブデン、シん青銅などの金属薄板のマス
ク板からなり、フォトリン工程などにより精密パターン
が形成されである。6は基板枠で、位置決めビン2.受
けビン3に通され、マスク5上に位置決めされている基
板7に当てられ、マスク枠1に結合ねじ、結合ばね手段
(図示は略す)などにより結合されている。
[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for forming a pattern on a substrate such as a semiconductor board, an insulating board, or a metal plate by vapor deposition or the like by applying a mask to the substrate.
0 Related to Film Forming Mask Apparatus [Prior Art] FIG. 7 is a sectional view showing a conventional general film forming mask apparatus, as shown, for example, in "Vacuum Deposition" (published by Adanesha Co., Ltd.). 1 is a mask frame, and a pair of positioning bins 2. A plurality of substrate holders are fixed to the bins 3 and the substrate pressing springs. 05 is a film forming mask passed through these bins 2 and positioned, and is made of stainless steel with a thickness of 0.05 to 0.5 mm,
The mask plate is made of a thin metal plate made of 42 alloy, molybdenum, thin bronze, etc., and a precise pattern is formed by a photolithography process or the like. 6 is a board frame, and positioning bins 2. It is passed through the receiving bottle 3, applied to the substrate 7 positioned on the mask 5, and is coupled to the mask frame 1 by coupling screws, coupling spring means (not shown), and the like.

上記従来装置において、位置決めビン2と基板受はビン
3との相対位置関係、及びマスク5のパターンと位置決
め用穴との相対位置関係を高精度に加工することにより
、基板7に対しマスク5のパターンを高精度に位置合せ
できるようにしている0 このように基vi7を成膜マスク装置に取付け、薄膜の
成膜手段によシ、マスク枠1の下方から成膜したい物質
を蒸着し、基板7にマスク5のパターンに従った薄膜の
パターンが形成される。
In the above-mentioned conventional device, the positioning bin 2 and the board holder are processed with high precision to control the relative positional relationship with the bin 3 and the relative positional relationship between the pattern of the mask 5 and the positioning hole. The pattern can be aligned with high precision. In this way, the base VI7 is attached to the film forming mask device, and the material to be filmed is deposited from below the mask frame 1 using a thin film forming means. A thin film pattern according to the pattern of the mask 5 is formed on 7.

スパッタ装置やCVD装置、ターゲット面積の大きな蒸
着装置など、基板7へ入射する蒸着物質の方向が大きな
範囲にわたる成膜装置で基板7にパターンを成膜する場
合、マスク5と基板7にすき間ができると、そのすきが
大きいほど成膜パターン精度は悪くなる。このため、第
7図に示した成膜マスク装置により、マスク5と基板7
を密着させる必要がある。
When a pattern is formed on the substrate 7 using a film forming apparatus such as a sputtering apparatus, a CVD apparatus, or an evaporation apparatus with a large target area, in which the direction of the evaporation material incident on the substrate 7 is over a wide range, a gap is created between the mask 5 and the substrate 7. The larger the gap, the worse the film formation pattern accuracy becomes. For this reason, the mask 5 and the substrate 7 are
It is necessary to attach it closely.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記のような従来の成膜マスク装置では、基板7下面の
中間部に対し、マスク4のパターン端が密接せず、すい
ている部分が生じ、蒸発源の面積が大きいものや、スパ
ッタ装置、プラズマCVD装置など基板のある点に入射
する成膜物質粒子の入射角範囲が広い成膜装置で形成さ
れたパターンは、パターン端かにじんで鮮明でなくなる
などの問題点があった。
In the conventional film-forming mask apparatus as described above, the pattern edge of the mask 4 does not come into close contact with the middle part of the lower surface of the substrate 7, resulting in an empty area. Patterns formed using a film forming apparatus, such as a plasma CVD apparatus, in which film forming material particles are incident on a certain point on a substrate in a wide range of incident angles, have problems such as blurring at the edges of the pattern and making the patterns less clear.

この発明は、上記のような問題点を解決するためになさ
れたもので、成膜物質のf&仮への入射角度が広がって
いても、鮮明で精密なパターンが形成できる成膜マスク
装置を得ることを目的としている。
This invention was made in order to solve the above-mentioned problems, and provides a film-forming mask device that can form a clear and precise pattern even if the angle of incidence of the film-forming substance on the f&temporary is wide. The purpose is to

〔問題点を解決するだめの手段〕[Failure to solve the problem]

この発明にかかる成膜マスク装置は、マスク枠に取付け
た押えばねによシ、マスクの中間部を押圧し基板に密接
するようにし、さらには、押えばねの中間の横辺部をマ
スクから所定間隔以上離し、押えばねが成膜される粒子
のかげにならないようにしたものである。
The film forming mask device according to the present invention uses a presser spring attached to a mask frame to press the middle part of the mask so as to bring it into close contact with the substrate, and furthermore, a lateral side part in the middle of the presser spring is moved away from the mask by a predetermined distance. The pressure springs are spaced apart from each other so that they are not shaded by the particles being formed into a film.

〔作用〕[Effect]

この発明においては、基板にマスクが密接しており、成
膜物質粒子がマスクと基板との間に入り込むことがなく
、基板に形成されたパターン端ににじみはできない。 
、 〔実施例〕 第1図はこの発明による成膜マスク装置の一実施例を示
す正面断面図であり、1〜7は上記従来装置と同一のも
のである。10は一端が取付けねじHによりマスク枠1
に取付けられ、折曲げられた先端でマスク3の中間部を
押え基板7に着接させる押えばねで、線ばねからなる。
In this invention, the mask is in close contact with the substrate, and particles of the film-forming material do not enter between the mask and the substrate, so that no bleeding occurs at the edges of the pattern formed on the substrate.
, [Embodiment] FIG. 1 is a front sectional view showing an embodiment of a film forming mask apparatus according to the present invention, and 1 to 7 are the same as the conventional apparatus described above. 10 has one end attached to the mask frame 1 with the mounting screw H.
This presser spring is attached to a wire spring and attaches the middle part of the mask 3 to the presser board 7 with its bent tip.

マスク5を第2図に平面図で示し、5aは穴状に形成さ
れであるパターン、5bは位置、決めビン用穴、5Cは
受はビン用穴、Mはマスク枠1の内縁に基板7とマスク
5が押えられる近距離部分を示し、Nはマスク枠1の内
縁から遠く押えられない中間部を示す。
The mask 5 is shown in a plan view in FIG. 2, where 5a is a pattern formed in the shape of a hole, 5b is a position and a hole for a bottle, 5C is a hole for a bottle, and M is a board 7 on the inner edge of the mask frame 1. and N indicate a short distance portion where the mask 5 can be pressed, and N indicates an intermediate portion that is far from the inner edge of the mask frame 1 and cannot be pressed.

このマスク5の中間部Nは基板7からすき間があくと、
成膜パターンが不鮮明となるが、押えばね10によりマ
スク5は基板7に押付けられ密接している。ところで、
この押えばね1oにより、パターン5aと成膜装置のタ
ーゲット又は対向電極(いづれも図示はしない)との途
中を遮ることになるので、成膜される粒子のかげになる
。このかげになる度合は成膜装置の種類、例えばスパッ
タ装置か、プラズマCVD装置か、蒸着装置であるかに
より異なり、また、成膜中のガス圧にも依存する。
If there is a gap between the middle part N of this mask 5 and the substrate 7,
Although the film formation pattern becomes unclear, the mask 5 is pressed against the substrate 7 by the pressing spring 10 and remains in close contact with the substrate 7. by the way,
This pressing spring 1o blocks the path between the pattern 5a and the target or counter electrode (none of which are shown) of the film forming apparatus, so that the particles to be formed into a film are shaded. The degree of this shadowing varies depending on the type of film forming apparatus, for example, whether it is a sputtering apparatus, a plasma CVD apparatus, or an evaporation apparatus, and also depends on the gas pressure during film forming.

さらに、押えばね1oの直径A(板ばねのときは幅A)
と基板7と押えばね10の中間の横辺部10aとの距離
Hに関係する。
Furthermore, the diameter A of the pressing spring 1o (width A in the case of a leaf spring)
This is related to the distance H between the substrate 7 and the intermediate horizontal side portion 10a of the pressing spring 10.

第3図は押ればね10の下の基板7面((成膜された膜
の最も薄い部分の膜厚dが、A/Hによりどのように変
化するかを、プラズマCVD装置について実測した曲線
図である。この実測結果からd/do=10−0°41
 A/Hこコニ、doハ押エハネ10カナイトキ、つま
りA=Oのときの膜厚であり、dとdoの単位。
Figure 3 shows a curve obtained by actually measuring how the film thickness d of the thinnest part of the formed film changes with A/H using a plasma CVD apparatus. From this actual measurement result, d/do=10-0°41
This is the film thickness when A/H, do and 10 times, that is, A=O, and is the unit of d and do.

AとHの単位は同じである。成膜された膜の使用のされ
方によって、d/doが1よりどれだけ小さくてよいか
が決まるが、最大20%減少してもよいときは、A/H
(0,24の条件が成立っていればよい。
The units of A and H are the same. How much the d/do can be lower than 1 depends on how the deposited film is used, but when it can be reduced by up to 20%, the A/H
(It is sufficient if the conditions 0 and 24 are satisfied.

つまり、基板7面から押えばね10の距離Hを、押えば
ね10の直径(線ばね)又は幅(板ばね)Aの4倍以上
に離しておけばよい。
In other words, the distance H of the pressing spring 10 from the surface of the substrate 7 may be set to be at least four times the diameter (wire spring) or width (plate spring) A of the pressing spring 10.

上記第1図の実施列では、マスク5と基板7は、位置決
めピン2と受はピン3及び基板押え4によシ正確な位置
合せかされているが、第4図に示す他の実施例のように
、これらの位置合せのピンによらないようにするととも
できる。基板枠12に設けられた収容部12aに基板7
を挿入している。帯状板ばねからなる押えはね14は、
折曲けられた先端にマスク13の中間部を接合し、取付
けねじUにより基板枠12に取付けられている。この押
えばね14は1対の位置決めピン15により、基板枠1
2に位置決めされている。基板枠12の収容部12aと
位置決めピン用穴は正確な関係位#に設けられ、マスク
13は押えばね14にこの位置決めピン用人から正確な
位置に接合されている。これにより、マスク13は基板
7に正確に位置合せされる。
In the embodiment shown in FIG. 1, the mask 5 and the substrate 7 are precisely aligned with the positioning pin 2 and the support by the pin 3 and the substrate holder 4, but other embodiments shown in FIG. You can also do this without relying on these alignment pins, as in The board 7 is placed in the housing part 12a provided in the board frame 12.
is inserted. The presser foot 14 is made of a band-shaped leaf spring.
The middle part of the mask 13 is joined to the bent tip, and is attached to the substrate frame 12 with attachment screws U. This pressing spring 14 is connected to the board frame 1 by a pair of positioning pins 15.
It is positioned at 2. The accommodating portion 12a of the substrate frame 12 and the hole for the positioning pin are provided in a precise relationship #, and the mask 13 is joined to the presser spring 14 at an accurate position from the positioning pin. Thereby, the mask 13 is accurately aligned with the substrate 7.

第5図及び第6図はこの発明の他のそれぞれ異なる実施
例を示す押えばねの斜視図である。
FIGS. 5 and 6 are perspective views of pressing springs showing other different embodiments of the present invention.

第5図では、押えばね16は線ばねからなり、折曲げら
れた中間の横辺部16aは、基板面からの距離Hが先端
辺部161)側を大きくした傾斜にされ、ばね性を高め
ている。
In FIG. 5, the pressing spring 16 is made of a wire spring, and the bent intermediate horizontal side portion 16a is sloped so that the distance H from the substrate surface is larger on the tip side portion 161) side to improve the springiness. ing.

第6図では、押えばね17は幅の狭い板ばねからなって
お、9.17aは中間の横辺部である。
In FIG. 6, the pressure spring 17 consists of a narrow leaf spring, with 9.17a being the middle lateral side.

なお、マスク5はフォトエツチングされた金属薄板に限
らず、ワイヤカット、レーザ加工、打抜きなどによりパ
ターンを形成してもよく、金属材に限らず高分子など他
の素材であってもよい。
Note that the mask 5 is not limited to a photoetched metal thin plate, and may have a pattern formed by wire cutting, laser processing, punching, etc., and may be made of not only a metal material but also other materials such as a polymer.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、マスクの中間部を押
えばねにより押え基板に密接させだので、成膜物質の基
板への入射角が広がっていても、鮮明で精密なパターン
が形成される。
As described above, according to the present invention, since the middle part of the mask is brought into close contact with the holding substrate by the pressing spring, a clear and precise pattern can be formed even if the angle of incidence of the film-forming substance on the substrate is wide. Ru.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明による成膜マスク装置の正面断面図、
第2図は嬉1図のマスクの平面図、第3図は第1の押え
ばねの直径(幅)に対する押えばねと基板の距離の割合
による膜厚の変化を示す曲線図、第4図はこの発明の他
の実施例による成膜マスク装置の正面断面図、2g5図
及び第6図はこの発明の他の別のそれぞれ異なる実施例
を示す押えばねの斜視図、fftN21は従来の成膜マ
スク装置の正面断面図である。 1・・・マスク枠、5・・マスク、6・・・基板枠、7
・・・基板、10・・・押えばね、10a・・・接辺部
、12・・・基板枠、13・・・マスク、コ、4,16
.l’?・・・押えばね、14a。 16a、1’7a・・・横辺部 なお、図中同一符号は同−又は相当部分を示す。
FIG. 1 is a front sectional view of a film forming mask device according to the present invention;
Fig. 2 is a plan view of the mask shown in Fig. 1, Fig. 3 is a curve diagram showing the change in film thickness depending on the ratio of the distance between the pressing spring and the substrate to the diameter (width) of the first pressing spring, and Fig. 4 is 2g5 and 6 are perspective views of pressing springs showing other different embodiments of the present invention, and fftN21 is a conventional film forming mask. FIG. 3 is a front sectional view of the device. 1...Mask frame, 5...Mask, 6... Board frame, 7
...Substrate, 10...Press spring, 10a...Tangential part, 12...Substrate frame, 13...Mask,
.. l'? ...If you press it, it's 14a. 16a, 1'7a... Horizontal side portions The same reference numerals in the drawings indicate the same or equivalent parts.

Claims (5)

【特許請求の範囲】[Claims] (1)基板枠に固定され表面にパターンが成膜される基
板、パターンが形成されていて上記基板に当てられたマ
スク、及び一端が上記基板枠又は上記マスクを押えるマ
スク枠に取付けられ、立て方向に折曲げられた辺の先端
部で上記マスクの中間部を上記基板に押付ける押えばね
を備えた成膜マスク装置。
(1) A substrate that is fixed to a substrate frame and has a pattern formed on its surface, a mask on which a pattern is formed and applied to the substrate, and one end of which is attached to the substrate frame or a mask frame that presses the mask, and is A film forming mask device comprising a pressing spring that presses an intermediate portion of the mask against the substrate at a tip of a side bent in a direction.
(2)押えばねは線状ばねからなる特許請求の範囲第1
項記載の成膜マスク装置。
(2) Claim 1 in which the pressing spring is a linear spring
The film-forming mask apparatus described in 1.
(3)押えばねは帯状板ばねからなる特許請求の範囲第
1項記載の成膜マスク装置。
(3) The film forming mask device according to claim 1, wherein the pressing spring is a band-shaped leaf spring.
(4)基板の成膜される部分から押えばねの横辺部の間
隔を、入射する成膜物粒子の妨げが少くなる位置に広げ
たことを特徴とする特許請求の範囲第1項ないし第3項
のいづれかに記載の成膜マスク装置。
(4) Claims 1 to 4 are characterized in that the distance between the horizontal side of the presser spring and the part of the substrate where the film is formed is widened to a position where there is less interference with incident film-forming particles. The film forming mask device according to any one of Item 3.
(5)基板の成膜される部分と押えばねの横辺部の間隔
を、押えばねの直径又は幅の4倍以上離したことを特徴
とする特許請求の範囲第4項記載の成膜マスク装置。
(5) A film forming mask according to claim 4, characterized in that the distance between the part of the substrate on which the film is to be formed and the lateral side of the pressing spring is at least four times the diameter or width of the pressing spring. Device.
JP536086A 1986-01-14 1986-01-14 Film forming mask device Pending JPS62164866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP536086A JPS62164866A (en) 1986-01-14 1986-01-14 Film forming mask device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP536086A JPS62164866A (en) 1986-01-14 1986-01-14 Film forming mask device

Publications (1)

Publication Number Publication Date
JPS62164866A true JPS62164866A (en) 1987-07-21

Family

ID=11609006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP536086A Pending JPS62164866A (en) 1986-01-14 1986-01-14 Film forming mask device

Country Status (1)

Country Link
JP (1) JPS62164866A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4932358A (en) * 1989-05-18 1990-06-12 Genus, Inc. Perimeter wafer seal
US5565035A (en) * 1996-03-14 1996-10-15 United Technologies Corporation Fixture for masking a portion of an airfoil during application of a coating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4932358A (en) * 1989-05-18 1990-06-12 Genus, Inc. Perimeter wafer seal
US5565035A (en) * 1996-03-14 1996-10-15 United Technologies Corporation Fixture for masking a portion of an airfoil during application of a coating

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